SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm · P-channel MOSFET and N-channel MOSFET incorporated into one package. · Low power dissipation due to P-channel MOSFET that features low RDS (ON) and low-voltage operation Q1 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS ±12 V ID -1.0 DC Drain current Pulse IDP (Note 2) A -2.0 Q2 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS 10 V ID 0.05 DC Drain current Pulse IDP (Note 2) A 0.2 JEDEC ― JEITA ― TOSHIBA ― Weight: 7.0 mg (typ.) Maximum Ratings (Q1, Q2 common) (Ta = 25°C) Characteristics Drain power dissipation Symbol PD (Note 1) Rating Unit 0.5 W Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C 2 Note 1: Mounted on an FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm ) Note 2: Pulse width limited by maximum channel temperature. Marking 6 Equivalent Circuit (top view) 5 4 6 5 4 Q1 KTA 1 2 Q2 3 1 2 1 3 2003-01-16 SSM6E01TU Handling Precaution This product has a MOS structure and is sensitive to electrostatic discharge. When handling individual devices (that have not yet been mounted on a PCB), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, containers and other objects which may come into direct contact with devices should be made of anti-static materials. Thermal resistance Rth (j-a) and drain power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration. 2 2003-01-16 SSM6E01TU Q1 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage (diode) VDSF IDR = 1.0 A, VGS = 0 V ¾ ¾ 1.2 V Gate leakage current IGSS VGS = ±10 V, VDS = 0 ¾ ¾ ±1 mA -12 ¾ ¾ V Drain-Source breakdown voltage Drain cut-off current V (BR) DSS IDSS ID = -1 mA, VGS = 0 VDS = -12 V, VGS = 0 ¾ ¾ -1 mA -0.4 ¾ -1.1 V (Note 3) 1.3 2.5 ¾ S ID = -0.5 A, VGS = -4 V (Note 3) ¾ 125 160 ID = -0.5 A, VGS = -2.5 V (Note 3) ¾ 180 240 ¾ 310 ¾ pF Min Typ. Max Unit Gate threshold voltage Vth VDS = -3 V, ID = -0.1 mA Forward transfer admittance |Yfs| VDS = -3 V, ID = -0.5 A Drain-Source ON resistance RDS (ON) Input capacitance Ciss VDS = -10 V, VGS = 0, f = 1 MHz mW Note 3: Pulse test Q2 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Symbol Test Condition IGSS VGS = 10 V, VDS = 0 ¾ ¾ 15 mA V (BR) DSS ID = 0.1 mA, VGS = 0 20 ¾ ¾ V IDSS VDS = 20 V, VGS = 0 ¾ ¾ 1 mA 0.7 ¾ 1.3 V Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA Forward transfer admittance |Yfs| VDS = 3 V, ID = 10 mA (Note 3) 25 50 ¾ mS Drain-Source ON resistance RDS (ON) ID = 10 mA, VGS = 2.5 V (Note 3) ¾ 4 10 W Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ¾ 11 ¾ pF Gate-Source resistance RGS VGS = 0~10 V 0.7 1.0 1.3 MW Note 3: Pulse test Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = ±100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. 2.5 V or higher is recommended for VGS voltage to turn on the N-channel MOSFET of this product. 3 2003-01-16 SSM6E01TU Load Switch Application Pch Vin Vout R1 ON/OFF +Vdrop- IN OUT ON/OFF Nch 1 MW Load Switch Ratings (Ta = 25°C) Characteristics Input voltage ON/OFF voltage Load current (DC) Load current (pulse) Channel temperature Symbol Rating Unit Vin 2.5~12 V Von/off 2.5~10 V IL 1 A ILP (Note 4) Tch 2 A 150 °C Note 4: Pulse width limited by maximum channel temperature. Load Switch Electrical Characteristics (Ta = 25°C) Characteristics Leakage current Symbol Min Typ. Max Unit Vin = 8 V, VON/OFF = 0 ¾ ¾ 1 mA VDROP (1) Vin = 3.0 V, VON/OFF = 2.5 V, IL = 0.5 A ¾ 0.09 0.12 VDROP (2) Vin = 5.0 V, VON/OFF = 2.5 V, IL = 1.0 A ¾ 0.13 0.16 VDS = 3 V, ID = 0.1 mA 0.7 ¾ 1.3 IFL P-channel drop voltage N-channel drive voltage Von/off Test Condition 4 V V 2003-01-16 SSM6E01TU Q1 (Pch MOSFET) ID – VDS ID – VGS -10000 -4 V -2.0 V -1.5 Common source VDS = -3 V Ta = 25°C -100 ID -1.7 V -1 Drain current Drain current -1000 -1.8 V ID (A) -10 V (mA) -2 -0.5 -25°C -10 100°C -1 -0.1 Common source Ta = 25°C 0 0 -0.5 -1 -1.5 Drain-Source voltage VDS -0.01 0 -2 -0.5 (V) -1 -1.5 Gate-Source voltage RDS (ON) – ID -2 VGS (V) RDS (ON) – VGS 0.5 1 Common source Common source Ta = 25°C ID = -0.5 A 0.4 Drain-Source on resistance RDS (ON) (W) Drain-Source on resistance RDS (ON) (W) -2.5 0.3 -2.5 V 0.2 0.1 -4.0 V 0.8 0.6 0.4 25°C 0.2 Ta = 100°C -25°C 0 0 -0.5 -1.0 Drain current -1.5 ID 0 0 -2.0 -2 (A) -4 -6 -8 Gate-Source voltage RDS (ON) – Ta Gate threshold voltage Vth (V) Drain-Source on resistance RDS (ON) (W) ID = -0.5 A 0.4 0.3 -2.5 V 0.2 -4 V 0 25 50 75 VGS (V) Common source VDS = -3 V ID = -0.1 mA Common source 0 -25 -12 Vth – Ta -1 0.5 0.1 -10 100 125 -0.8 -0.6 -0.4 -0.2 0 -25 150 Ambient temperature Ta (°C) 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 5 2003-01-16 SSM6E01TU Q1 (Pch MOSFET) ïYfsï – ID (pF) 10 Capacitance C Forward transfer admittance ïYfsï (S) C – VDS 1 0.1 1000 Ciss Coss 100 Crss VGS = 0 f = 1 MHz 0.01 -1 -10 -100 Drain current -1000 ID Ta = 25°C 10 -0.1 -10000 -1 (mA) -10 Drain-Source voltage VDS Dynamic input characteristics Common source VDD = -10 V ID = -1.0 A VGS = 0 to -2.5 V RG = 4.7 W (ns) Ta = 25°C Ta = 25°C 100 toff t -6 VDD = -10 V Switching time VGS (V) (V) 500 Common source -8 -100 t – ID -10 Gate-Source voltage Common source -4 -2 tf ton 10 0 0 2 4 6 Total gate charge Qg 8 tr 5 -0.01 (nC) -0.1 Drain current -1 ID (A) IDR – VDS Drain reveres current IDR (A) -2 Common source VGS = 0 V -1.6 D Ta = 25°C G -1.2 S -0.8 -0.4 0 0 0.2 0.4 0.6 Drain-Source voltage VDS 0.8 1 (V) 6 2003-01-16 SSM6E01TU Q2 (Nch MOSFET) ID – VDS 100 ID – VDS (low-voltage area) 100 2.5 2.0 4.0 Common source 2.5 2.0 2.2 Ta = 25°C 80 (mA) ID 60 1.8 40 Drain current ID Drain current (mA) 80 1.9 1.7 1.6 20 Common source Ta = 25°C 60 1.8 40 1.6 20 VGS = 1.4 V 0 0 2 4 6 8 Drain-Source voltage VDS VGS = 1.4 V 0 0 10 0.2 0.4 (V) ID – VGS Common source VDS = 3 V 100 D (mA) ID G IDR 1 Drain current (mA) Drain reverse current IDR 1.0 1000 Common source VGS = 0 Ta = 25°C 10 0.8 Drain-Source voltage VDS (V) IDR – VDS 100 0.6 S 0.1 10 Ta = 100°C 1 25°C -25°C 0.1 0.01 0 -0.2 -0.4 -0.6 -0.8 -1.0 Drain-Source voltage VDS 0.01 0 -1.2 (V) 0.5 1 1.5 2 Gate-Source voltage 2.5 3 VGS (V) ïYfsï – ID 300 C – VDS 100 VDS = 3 V Ta = 25°C Common source VGS = 0 f = 1 MHz 50 (pF) 100 50 Capacitance C Forward transfer admittance ïYfsï (mS) Common source 30 30 Ta = 25°C Ciss 10 Coss 5 3 10 5 1 Crss 3 5 10 Drain current 30 ID 50 1 0.1 100 (mA) 0.3 1 3 Drain-Source voltage VDS 7 10 30 (V) 2003-01-16 SSM6E01TU Q2 (Nch MOSFET) RDS (ON) – ID t – ID 10000 10 Common source (ns) t 6 Switching time Drain-Source on resistance RDS (ON) (W) 8 2.5 4 Common source VDD = 3 V VGS = 0~2.5 V Ta = 25°C 5000 Ta = 25°C 3000 toff 1000 500 tf 300 ton 100 VGS = 4 V 2 tr 50 30 0.1 0 0 20 40 Drain current 60 ID 80 100 0.3 1 3 Drain current (mA) 10 ID 30 100 (mA) RDS (ON) – Ta 10 Common source Drain-Source on resistance RDS (ON) (W) ID = 10 mA 8 6 2.5 4 VGS = 4 V 2 0 -25 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 8 2003-01-16 SSM6E01TU RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2003-01-16