TOSHIBA SSM6E01TU

SSM6E01TU
TOSHIBA Multi-Chip Device
Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer)
SSM6E01TU
Load Switch Applications
Unit: mm
·
P-channel MOSFET and N-channel MOSFET incorporated into one
package.
·
Low power dissipation due to P-channel MOSFET that features low
RDS (ON) and low-voltage operation
Q1 Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
-12
V
Gate-Source voltage
VGSS
±12
V
ID
-1.0
DC
Drain current
Pulse
IDP (Note 2)
A
-2.0
Q2 Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
20
V
Gate-Source voltage
VGSS
10
V
ID
0.05
DC
Drain current
Pulse
IDP (Note 2)
A
0.2
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: 7.0 mg (typ.)
Maximum Ratings (Q1, Q2 common) (Ta = 25°C)
Characteristics
Drain power dissipation
Symbol
PD (Note 1)
Rating
Unit
0.5
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
2
Note 1: Mounted on an FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm )
Note 2: Pulse width limited by maximum channel temperature.
Marking
6
Equivalent Circuit (top view)
5
4
6
5
4
Q1
KTA
1
2
Q2
3
1
2
1
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SSM6E01TU
Handling Precaution
This product has a MOS structure and is sensitive to electrostatic discharge. When handling individual devices
(that have not yet been mounted on a PCB), ensure that the environment is protected against static electricity.
Operators should wear anti-static clothing, containers and other objects which may come into direct contact with
devices should be made of anti-static materials.
Thermal resistance Rth (j-a) and drain power dissipation PD vary depending on board material, board area, board
thickness and pad area. When using this device, please take heat dissipation into consideration.
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SSM6E01TU
Q1 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage (diode)
VDSF
IDR = 1.0 A, VGS = 0 V
¾
¾
1.2
V
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0
¾
¾
±1
mA
-12
¾
¾
V
Drain-Source breakdown voltage
Drain cut-off current
V (BR) DSS
IDSS
ID = -1 mA, VGS = 0
VDS = -12 V, VGS = 0
¾
¾
-1
mA
-0.4
¾
-1.1
V
(Note 3)
1.3
2.5
¾
S
ID = -0.5 A, VGS = -4 V
(Note 3)
¾
125
160
ID = -0.5 A, VGS = -2.5 V
(Note 3)
¾
180
240
¾
310
¾
pF
Min
Typ.
Max
Unit
Gate threshold voltage
Vth
VDS = -3 V, ID = -0.1 mA
Forward transfer admittance
|Yfs|
VDS = -3 V, ID = -0.5 A
Drain-Source ON resistance
RDS (ON)
Input capacitance
Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
mW
Note 3: Pulse test
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Symbol
Test Condition
IGSS
VGS = 10 V, VDS = 0
¾
¾
15
mA
V (BR) DSS
ID = 0.1 mA, VGS = 0
20
¾
¾
V
IDSS
VDS = 20 V, VGS = 0
¾
¾
1
mA
0.7
¾
1.3
V
Gate threshold voltage
Vth
VDS = 3 V, ID = 0.1 mA
Forward transfer admittance
|Yfs|
VDS = 3 V, ID = 10 mA
(Note 3)
25
50
¾
mS
Drain-Source ON resistance
RDS (ON)
ID = 10 mA, VGS = 2.5 V
(Note 3)
¾
4
10
W
Input capacitance
Ciss
VDS = 3 V, VGS = 0, f = 1 MHz
¾
11
¾
pF
Gate-Source resistance
RGS
VGS = 0~10 V
0.7
1.0
1.3
MW
Note 3: Pulse test
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = ±100 mA for
this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower
voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration for using the device. 2.5 V or higher is recommended for VGS voltage to turn
on the N-channel MOSFET of this product.
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SSM6E01TU
Load Switch Application
Pch
Vin
Vout
R1
ON/OFF
+Vdrop-
IN
OUT
ON/OFF
Nch
1 MW
Load Switch Ratings (Ta = 25°C)
Characteristics
Input voltage
ON/OFF voltage
Load current (DC)
Load current (pulse)
Channel temperature
Symbol
Rating
Unit
Vin
2.5~12
V
Von/off
2.5~10
V
IL
1
A
ILP (Note 4)
Tch
2
A
150
°C
Note 4: Pulse width limited by maximum channel temperature.
Load Switch Electrical Characteristics (Ta = 25°C)
Characteristics
Leakage current
Symbol
Min
Typ.
Max
Unit
Vin = 8 V, VON/OFF = 0
¾
¾
1
mA
VDROP (1)
Vin = 3.0 V, VON/OFF = 2.5 V,
IL = 0.5 A
¾
0.09
0.12
VDROP (2)
Vin = 5.0 V, VON/OFF = 2.5 V,
IL = 1.0 A
¾
0.13
0.16
VDS = 3 V, ID = 0.1 mA
0.7
¾
1.3
IFL
P-channel drop voltage
N-channel drive voltage
Von/off
Test Condition
4
V
V
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SSM6E01TU
Q1 (Pch MOSFET)
ID – VDS
ID – VGS
-10000
-4 V
-2.0 V
-1.5
Common source
VDS = -3 V
Ta = 25°C
-100
ID
-1.7 V
-1
Drain current
Drain current
-1000
-1.8 V
ID
(A)
-10 V
(mA)
-2
-0.5
-25°C
-10
100°C
-1
-0.1
Common source
Ta = 25°C
0
0
-0.5
-1
-1.5
Drain-Source voltage VDS
-0.01
0
-2
-0.5
(V)
-1
-1.5
Gate-Source voltage
RDS (ON) – ID
-2
VGS (V)
RDS (ON) – VGS
0.5
1
Common source
Common source
Ta = 25°C
ID = -0.5 A
0.4
Drain-Source on resistance
RDS (ON) (W)
Drain-Source on resistance
RDS (ON) (W)
-2.5
0.3
-2.5 V
0.2
0.1
-4.0 V
0.8
0.6
0.4
25°C
0.2
Ta = 100°C
-25°C
0
0
-0.5
-1.0
Drain current
-1.5
ID
0
0
-2.0
-2
(A)
-4
-6
-8
Gate-Source voltage
RDS (ON) – Ta
Gate threshold voltage Vth (V)
Drain-Source on resistance
RDS (ON) (W)
ID = -0.5 A
0.4
0.3
-2.5 V
0.2
-4 V
0
25
50
75
VGS (V)
Common source
VDS = -3 V
ID = -0.1 mA
Common source
0
-25
-12
Vth – Ta
-1
0.5
0.1
-10
100
125
-0.8
-0.6
-0.4
-0.2
0
-25
150
Ambient temperature Ta (°C)
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
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SSM6E01TU
Q1 (Pch MOSFET)
ïYfsï – ID
(pF)
10
Capacitance C
Forward transfer admittance
ïYfsï
(S)
C – VDS
1
0.1
1000
Ciss
Coss
100
Crss
VGS = 0
f = 1 MHz
0.01
-1
-10
-100
Drain current
-1000
ID
Ta = 25°C
10
-0.1
-10000
-1
(mA)
-10
Drain-Source voltage VDS
Dynamic input characteristics
Common source
VDD = -10 V
ID = -1.0 A
VGS = 0 to -2.5 V
RG = 4.7 W
(ns)
Ta = 25°C
Ta = 25°C
100
toff
t
-6
VDD = -10 V
Switching time
VGS (V)
(V)
500
Common source
-8
-100
t – ID
-10
Gate-Source voltage
Common source
-4
-2
tf
ton
10
0
0
2
4
6
Total gate charge Qg
8
tr
5
-0.01
(nC)
-0.1
Drain current
-1
ID
(A)
IDR – VDS
Drain reveres current IDR
(A)
-2
Common source
VGS = 0 V
-1.6
D
Ta = 25°C
G
-1.2
S
-0.8
-0.4
0
0
0.2
0.4
0.6
Drain-Source voltage VDS
0.8
1
(V)
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SSM6E01TU
Q2 (Nch MOSFET)
ID – VDS
100
ID – VDS (low-voltage area)
100
2.5
2.0
4.0
Common source
2.5
2.0
2.2
Ta = 25°C
80
(mA)
ID
60
1.8
40
Drain current
ID
Drain current
(mA)
80
1.9
1.7
1.6
20
Common source
Ta = 25°C
60
1.8
40
1.6
20
VGS = 1.4 V
0
0
2
4
6
8
Drain-Source voltage VDS
VGS = 1.4 V
0
0
10
0.2
0.4
(V)
ID – VGS
Common source
VDS = 3 V
100
D
(mA)
ID
G
IDR
1
Drain current
(mA)
Drain reverse current IDR
1.0
1000
Common source
VGS = 0
Ta = 25°C
10
0.8
Drain-Source voltage VDS
(V)
IDR – VDS
100
0.6
S
0.1
10
Ta = 100°C
1
25°C
-25°C
0.1
0.01
0
-0.2
-0.4
-0.6
-0.8
-1.0
Drain-Source voltage VDS
0.01
0
-1.2
(V)
0.5
1
1.5
2
Gate-Source voltage
2.5
3
VGS (V)
ïYfsï – ID
300
C – VDS
100
VDS = 3 V
Ta = 25°C
Common source
VGS = 0
f = 1 MHz
50
(pF)
100
50
Capacitance C
Forward transfer admittance
ïYfsï (mS)
Common source
30
30
Ta = 25°C
Ciss
10
Coss
5
3
10
5
1
Crss
3
5
10
Drain current
30
ID
50
1
0.1
100
(mA)
0.3
1
3
Drain-Source voltage VDS
7
10
30
(V)
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SSM6E01TU
Q2 (Nch MOSFET)
RDS (ON) – ID
t – ID
10000
10
Common source
(ns)
t
6
Switching time
Drain-Source on resistance
RDS (ON) (W)
8
2.5
4
Common source
VDD = 3 V
VGS = 0~2.5 V
Ta = 25°C
5000
Ta = 25°C
3000
toff
1000
500
tf
300
ton
100
VGS = 4 V
2
tr
50
30
0.1
0
0
20
40
Drain current
60
ID
80
100
0.3
1
3
Drain current
(mA)
10
ID
30
100
(mA)
RDS (ON) – Ta
10
Common source
Drain-Source on resistance
RDS (ON) (W)
ID = 10 mA
8
6
2.5
4
VGS = 4 V
2
0
-25
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
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SSM6E01TU
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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