SSM5H08TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter Unit: mm • Nch MOSFET and schottky diode combined in one package • Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±12 V ID 1.5 Drain current DC Pulse Drain power dissipation Channel temperature IDP (Note 2) 6.0 PD (Note 1) 0.5 t = 10s 0.8 Tch 150 A W °C Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY UFV DIODE Characteristics Symbol Rating Unit VRM 25 V Reverse voltage VR 20 V Average forward current IO 0.5 A IFSM 2 (50 Hz) A Tj 125 °C Maximum (peak) reverse voltage Peak one cycle surge forward current (non-repetitive) Junction temperature JEDEC ⎯ JEITA ⎯ TOSHIBA 2-2R1A Weight: 7 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON Characteristics Symbol Rating Unit Storage temperature Tstg −55~125 °C Operating temperature Topr (Note 3) −40~100 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2) Note 2: Pulse width limited by max channel temperature Note 3: Operating temperature limited by max channel temperature and max junction temperature 1 2007-11-01 SSM5H08TU Marking Equivalent Circuit 5 4 5 3 1 4 KER 1 2 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2 2007-11-01 SSM5H08TU MOSFET Electrical Characteristics (Ta = 25°C) Characteristic Symbol Gate leakage current Min Typ. Max Unit VGS = ±12 V, VDS = 0 ⎯ ⎯ ±1 μA V (BR) DSS ID = 1 mA, VGS = 0 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = -12 V 12 ⎯ ⎯ IGSS Drain-Source breakdown voltage Test Condition V VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.4 ⎯ 1.1 V Forward transfer admittance |Yfs| VDS = 3 V, ID = 0.75 A (Note 4) 1.4 2.8 ⎯ S Drain-Source on-resistance RDS (ON) ID = 0.75 A, VGS = 4 V (Note 4) ⎯ 140 160 ID = 0.75 A, VGS = 2.5 V (Note 4) ⎯ 180 220 Drain Cut-off current IDSS mΩ Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 125 ⎯ pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 17 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 42 ⎯ pF Switching time Turn-on time ton VDD = 10 V, ID = 0.75 A ⎯ 15.5 ⎯ Turn-off time toff VGS = 0~2.5 V, RG = 4.7 Ω ⎯ 8.5 ⎯ ns Note 4: Pulse measurement Switching Time Test Circuit (b) VIN (a) Test circuit 2.5 V OUT 0 10 μs RG IN 2.5 V VDD = 10 V RG = 4.7 Ω Duty < = 1% VIN: tr, tf < 5 ns Common source Ta = 25°C 0V (c) VOUT VDD 90% 10% VDD 90% 10% VDS (ON) tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Be sure to take this into consideration when using the device. 3 2007-11-01 SSM5H08TU Schottky Diode Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit VF (1) IF = 0.3 A ⎯ 0.38 0.45 V VF (2) IF = 0.5 A ⎯ 0.43 ⎯ V Reverse current IR VR = 20 V ⎯ ⎯ 50 μA Total capacitance CT VR = 0 V, f = 1 MHz ⎯ 46 ⎯ pF Forward voltage Precaution The schottky barrier diodes of this product have large-reverse-current-leakage characteristics compared to other switching diodes. This current leakage and improper operating temperature or voltage may cause thermal runaway resulting in breakdown. Take forward and reverse loss into consideration in radiation design and safety design. 4 2007-11-01 SSM5H08TU MOS Electrical Characteristics Graph I D - V G S (MO S FET) I D - V D S (MO S FET) 3.0 10000 4.0V Common Source VDS =3V Common Source Ta=25℃ 2.5V 1000 2.0V 2.0 Drain current I D (mA) Drain current I D (mA) 2.5 1.5 VGS =1.8V 1.0 100 Ta=85℃ 25℃ 10 1 0.5 -25℃ 0.1 0.0 0.01 0.0 0.5 1.0 1.5 2.0 0 1 2 3 R D S(O N) - V G S (MO S FET ) R D S (O N) - ID (MO S FET ) 0.5 500 Common Source I D=0.75A Common Source Ta=25℃ 0.4 300 200 2.5V 100 R DS(ON) (Ω) Drain-Source on resistance R DS(ON) (mΩ) Drain-Source on resistance 400 0.3 25℃ 0.2 Ta=85℃ 0.1 VGS =4.0V -25℃ 0 0 0 0.5 1 1.5 2 0 2.5 2 Drain current I D (A) 4 6 8 Gate-Source voltage V GS (V) V th - Ta (MO S FET ) R D S(O N) - T a (MO S FET ) 2 0.5 Common Source I D=0.75A 0.4 1.8 Common Source I D=0.1mA 1.6 VDS =3V Gate threshold voltage Vth(V) 1.4 R DS(ON) (Ω) Drain-Source on resistance 4 Gate-Source voltage V GS (V) Drain-Source voltage V DS (V) 0.3 2.5V 0.2 4.0V 0.1 1.2 1 0.8 0.6 0.4 0.2 0 0 -25 0 25 50 75 -25 100 0 25 50 75 100 Ambient temperture Ta (℃) Ambient temperture Ta (℃) 5 2007-11-01 SSM5H08TU |Yfs| - I D (MO S FET) C - V D S (MO S FET) 1000 100 10 Capacitance C (pF) Forward transfer admittance |Yfs| (mS) Common Source VDS =3V Ta=25℃ 1 C iss 100 C oss C rss 10 Common Source VGS =0V f=1MHz Ta=25℃ 0.1 1 0.01 0.001 0.01 0.1 1 0.1 10 1 100 t - I D (MO S FET) I D R - V D S (MO S FET) 1000 4 Common Source VGS =0 Ta=25℃ 3.5 Drain reverse current I DR (mA) 10 Drain-Source voltage V DS (V) Drain current ID (A) toff 100 Switching time t (ns) 3 Common Source VDD=10V 2.5 2 1.5 VGS =0～2.5V Ta=25℃ tf ton 10 tr 1 1 0.5 0 0 -0.2 -0.4 -0.6 -0.8 0.1 0.01 -1 0.1 Drain-Source voltage V DS (V) Dyn a mic In p u t Ch ara cteristic (MO S FET ) 10 PD – Ta (MOSFET) 1.2 10 Common Source VDD=10V Mounted on FR4 board Drain power dissipation PD (W) 8 Gate-Source voltage V GS (V) 1 Drain current I D (A) I D=1.5A Ta=25℃ 6 4 2 0 0 0.5 1 1.5 2 2.5 3 Cu Pad: 645 mm2) t = 10 s 0.8 0.6 DC 0.4 0.2 0 0 3.5 (25.4 mm × 25.4 mm × 1.6 t, 1 50 100 150 Ambient temperature Ta (°C) Tatal gate charge Q g (nC) 6 2007-11-01 SSM5H08TU S a fe o p era tin g area (MO S FET ) 10 I D max (Pulsed) * 1ms Drain current I D (A) 1 10ms I D max (Continuous) 100ms DC operation Ta=25℃ 0.1 Mounted on FR4 board (25.4 mm ・ 25.4 mm ・ 1.6 t Cu pad: 645 mm2 ) *:Single nonrepetive Pulse Ta ・ 25°C Curves must be derated linealy with increase in temperture. 0.01 0.001 0.1 1 10 100 Drain-Source voltage V DS (V) 7 2007-11-01 SSM5H08TU SBD Electrical Characteristics Graph IF – VF (SBD) IR – VR (SBD) 1000 10 100 (mA) 75 100 Reverse current IR Forward current IF (mA) 125 50 Ta = 25°C 10 100 1 75 0.1 50 Ta = 25°C 0.01 0 1 0 0.2 0.1 0.3 0.4 0.5 Pulse measurement 0.001 0 5 0.7 rth – tw (SBD) 3000 100 1 0.001 15 VR Single pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 00.1 0.1 1 Pulse width 10 20 (V) CT – VR (SBD) 1000 10 10 Reverse voltage (V) Total capacitance CT (pF) Transient thermal impedance rth (°C/W) Forward voltage VF 0.6 100 1000 tw (s) f = 1 MHz Ta = 25°C 1000 100 10 1 0.01 0.1 1 Reverse voltage 8 10 VR 100 (V) 2007-11-01 SSM5H08TU Transient Thermal Impedance Graph Single pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 100 10 1 0.001 0.01 0.1 1 rth (°C/W) Pulse width Transient thermal impedance Transient thermal impedance rth (°C/W ) rth – tw (MOSFET) 1000 10 tw 100 1000 (s) rth – tw (SBD) 1000 100 10 1 0.001 Single pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 0.01 0.1 1 Pulse width 9 10 tw 100 1000 (s) 2007-11-01 SSM5H08TU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2007-11-01