STMICROELECTRONICS SSRP130B1

SSRP130B1

Application Specific Discretes
A.S.D.
DUAL ASYMMETRICAL OVERVOLTAGE
PROTECTION FOR TELECOM LINE
MAIN APPICATIONS
Where asymmetrical protection against lightning
strikes and other transient overvoltages is required :
Solid-State relays
SLIC with integrated ring generator
DESCRIPTION
The SSRP130B1 is a dual asymmetrical transient
voltage suppressor designed to protect a
solid-state ring relay or SLICs with integrated ring
generator from overvoltages.
The asymmetrical protection configuration is
necessary to allow the use of all different types of
ringing schemes.
SO8
FUNCTIONAL DIAGRAM
FEATURES
Dual bidirectional asymmetrical protection :
Stand-off voltages :
+ 130V for positive voltages
- 185V for negative voltages
Peak pulse current : IPP = 2 * 25A (5 / 310 µs)
Holding current : 150mA
TIP
1
8
GND
NC
2
7
GND
NC
3
6
GND
RING
4
5
GND
Peak Surge
Voltage
(V)
Voltage
Waveform
(µs)
Current
Waveform
(µs)
Admissible
Ipp
(A)
Necessary
Resistor
(Ω)
ITU-T K20
1000
10/700
5/310
25
-
VDE0433
2000
10/700
5/310
25
40
VDE0878
1500
1.2/50
1/20
35
3
IEC 1000-4-5
Level 2
10/700
1.2/50
5/310
8/20
25
25
-
FCC Part 68
1500
800
10/160
10/560
10/160
10/560
29
21
45
30
BELLCORE TR-NWT-001089
2500
1000
2/10
10/1000
2/10
10/1000
70
15
30
57
COMPLIES WITH THE
FOLLOWING STANDARDS:
TM: ASD is trademarks of STMicroelectronics.
July 1998 - Ed: 4A
SSRP130B1
APPLICATION INFORMATION
Fig 1 : Topologyof the classical line card protection.
Fig 2 : Classical use of the SSRP130B1.
PTC
R
R
PTC
Tip
Tip
SSRP130B1
SLIC
2nd
1st
LINE
stage
SLIC
Line
stage
PTC
R
PTC
(*)
R
Ring
Ring
Ring generator
(*) SLIC with integrated ring generator or solid state relay.
The classical line card requires protection before
the ring relay and a second one for the SLIC (fig.1).
The use of new SLICs with integrated ring
generator or board based on solid state ring relay
suppresses this second protection (Fig. 2). Then
the only remaining stage, located between the line
and the ring relay, has to optimize the protection.
The classical symmetrical first stage protector
becomes not sufficient to avoid any circuit
destructionduring surges.
The SSRP130B1 device takes into account this
fact and is based on asymmetrical voltage
characteristics (Fig.3a). The ring signal being
shifted back by the battery voltage, the
SSRP130B1 negative breakover value Vbo- is
greater than the positive one Vbo+. This point
guaranteesa protection operationvery close to the
peak of the normal operating voltage without any
disturbance of the ring signal.
Fig 3 : SSRP130B1 electrical characteristics.
a : Line to ground characteristics.
b : Line to line characteristics.
I
VBR -
VboVbo+
V
In addition with the 2 crowbar functions which
perform the protection of both TIP and RING lines
versus ground, a third cell assumes the differential
mode protection of the SLIC. The breakdown
voltage values of this third cell are the same for
2/7
VBR -
both positive and negative parts of the
characteristics and are equivalent to the negative
breakdown voltage value of the TIP and RING
lines versus GND cells (Fig.3 b).
SSRP130B1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
IPP
Peak pulse current (see note 1)
ITSM
Non repetitive surge peak on-state current
(F=50Hz)
Top
Operating temperature range
Tstg
Tj
Storage temperature range
Maximum operating junction temperature
TL
Maximum lead temperature for soldering during 10s
Note 1 : Pulse waveform :
10/1000µs tr=10µs
5/310µs
tr=5µs
1/20µs
tr=1µs
2/10µs
tr=2µs
Value
Unit
10/1000 µs
5/310µs
1/20µs
2/10µs
2x15
2x25
2x35
2x70
A
tp = 0.2 s
tp = 5 s
tp = 900 s
7.5
4.0
1.5
A
0 to + 70
°C
- 55 to + 150
+ 150
°C
°C
260
°C
% I PP
tp=1000µs
tp=310µs
tp=20µs
tp=10µs
100
50
0
tr
t
tp
THERMAL RESISTANCE
Symbol
Rth (j-a)
Parameter
Junction to ambient
Value
Unit
170
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
VR
Stand-off voltage
IR
Leakage current at stand-off voltage
VBR
Breakdown voltage
VBO
Breakover voltage
IH
Holding current
IBO
Breakover current
IPP
Peak pulse current
C
Capacitance
I
IPP
IBO
IH
IR
VR
V
VBR VBO
3/7
SSRP130B1
ELECTRICAL CHARACTERISTICS between TIP and GND, RING and GND (Tamb=25°C)
Symbol
Parameter
Test conditions (note 1)
VBO
Breakover voltage
(note 2)
Min
Max
Positive voltage
Unit
V
50Hz
10/700µs
1.2/50µs
2/10µs
200
175
180
250
50Hz
10/700µs
1.2/50µs
2/10µs
280
235
240
340
Negative voltage
IBO
Breakover current
Positive voltage
Negative voltage
110
110
mA
IH
Holding current
Positive polarity
Negative polarity
150
150
mA
IR
Leakage current
(note 3)
VR = +130 V
VR = - 185 V
10
10
µA
C
Capacitance
F = 100kHz, V = 100mV, VR = 0V
100
pF
Max
Unit
ELECTRICAL CHARACTERISTICS between TIP and RING (Tamb=25°C)
Symbol
Parameter
Test conditions
IR
Leakage current
(note 3)
VR = +185 V
VR = - 185 V
10
10
µA
C
Capacitance
F = 100kHz, V = 100mV, VR = 0V
100
pF
Note 1 :
Note 2 :
Note 3 :
Positive voltage means between T and G, or between R and G
Negative voltage means between G and T, or between G and T
See test circuit for VBO parameters
IR measured at VR guarantees V BR > VR
Fig. 4 : Surge peak current versus overload
duration (maximum values).
15
ITSM(A)
F=50Hz
Tj initial=25°C
10
5
t(s)
0.01
4/7
Min
0.1
1
10
100
1000
SSRP130B1
FUNCTION HOLDING CURRENT (IH) TEST CIRCUIT (GO-NO GO TEST)
R
- VP
D.U.T.
VBAT = - 48 V
Surge generator
This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional
test circuit.
TEST PROCEDURE :
1) Adjust the current level at the IH value by short circuiting the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 ms.
3) The D.U.T will come back off-state within 50 ms max.
TEST CIRCUIT FOR VBO parameters :
R4
(VP is defined in unload condition)
TIP
L
R2
RING
R3
VP
R1
C1
C2
G ND
Pulse (µs)
Vp
C1
C2
L
R1
R2
R3
R4
IPP
Rp
tr
tp
(V)
(µF)
(nF)
(µH)
(Ω)
(Ω)
(Ω)
(Ω)
(A)
(Ω)
10
700
1000
20
200
0
50
15
25
25
25
0
1.2
50
1500
1
33
0
76
13
25
25
30
10
2
10
2500
10
0
1.1
1.3
0
3
3
38
62
5/7
SSRP130B1
ORDER CODE
SSRP 130 B 1
RL
PACKAGING:
RL = tape and reel.
= tube
SOLID STATE RELAY PROTECTION
PACKAGE:
1 = SO8 Plastic.
STAND-OFF VOLTAGE
MARKING
Types
Package
Marking
SSRP130B1
SO8
SSR130
PACKAGE MECHANICAL DATA.
SO8 Plastic
MARKING : Logo, Date Code, Part Number.
REF.
DIMENSIONS
Millimetres
Inches
Min.
Typ. Max. Min.
Typ. Max.
0.069
0.010
0.065
0.019
A
a1
a2
0.1
1.75
0.25 0.004
1.65
b
0.35
0.48 0.014
b1
C
0.19
0.25 0.007
0.50
c1
D
E
Weight : 0.08g
6/7
45°(typ)
4.8
5.8
5.0
6.2
0.189
0.228
0.197
0.244
e
1.27
0.050
e3
F
3.81
0.150
3.8
4.0
L
0.4
1.27 0.016
0.050
0.6
8° (max)
0.024
M
S
Packaging : Products supplied in antistatic tubes
or tape and reel.
0.010
0.020
0.15
0.157
SSRP130B1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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