SSRP130B1 Application Specific Discretes A.S.D. DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE MAIN APPICATIONS Where asymmetrical protection against lightning strikes and other transient overvoltages is required : Solid-State relays SLIC with integrated ring generator DESCRIPTION The SSRP130B1 is a dual asymmetrical transient voltage suppressor designed to protect a solid-state ring relay or SLICs with integrated ring generator from overvoltages. The asymmetrical protection configuration is necessary to allow the use of all different types of ringing schemes. SO8 FUNCTIONAL DIAGRAM FEATURES Dual bidirectional asymmetrical protection : Stand-off voltages : + 130V for positive voltages - 185V for negative voltages Peak pulse current : IPP = 2 * 25A (5 / 310 µs) Holding current : 150mA TIP 1 8 GND NC 2 7 GND NC 3 6 GND RING 4 5 GND Peak Surge Voltage (V) Voltage Waveform (µs) Current Waveform (µs) Admissible Ipp (A) Necessary Resistor (Ω) ITU-T K20 1000 10/700 5/310 25 - VDE0433 2000 10/700 5/310 25 40 VDE0878 1500 1.2/50 1/20 35 3 IEC 1000-4-5 Level 2 10/700 1.2/50 5/310 8/20 25 25 - FCC Part 68 1500 800 10/160 10/560 10/160 10/560 29 21 45 30 BELLCORE TR-NWT-001089 2500 1000 2/10 10/1000 2/10 10/1000 70 15 30 57 COMPLIES WITH THE FOLLOWING STANDARDS: TM: ASD is trademarks of STMicroelectronics. July 1998 - Ed: 4A SSRP130B1 APPLICATION INFORMATION Fig 1 : Topologyof the classical line card protection. Fig 2 : Classical use of the SSRP130B1. PTC R R PTC Tip Tip SSRP130B1 SLIC 2nd 1st LINE stage SLIC Line stage PTC R PTC (*) R Ring Ring Ring generator (*) SLIC with integrated ring generator or solid state relay. The classical line card requires protection before the ring relay and a second one for the SLIC (fig.1). The use of new SLICs with integrated ring generator or board based on solid state ring relay suppresses this second protection (Fig. 2). Then the only remaining stage, located between the line and the ring relay, has to optimize the protection. The classical symmetrical first stage protector becomes not sufficient to avoid any circuit destructionduring surges. The SSRP130B1 device takes into account this fact and is based on asymmetrical voltage characteristics (Fig.3a). The ring signal being shifted back by the battery voltage, the SSRP130B1 negative breakover value Vbo- is greater than the positive one Vbo+. This point guaranteesa protection operationvery close to the peak of the normal operating voltage without any disturbance of the ring signal. Fig 3 : SSRP130B1 electrical characteristics. a : Line to ground characteristics. b : Line to line characteristics. I VBR - VboVbo+ V In addition with the 2 crowbar functions which perform the protection of both TIP and RING lines versus ground, a third cell assumes the differential mode protection of the SLIC. The breakdown voltage values of this third cell are the same for 2/7 VBR - both positive and negative parts of the characteristics and are equivalent to the negative breakdown voltage value of the TIP and RING lines versus GND cells (Fig.3 b). SSRP130B1 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter IPP Peak pulse current (see note 1) ITSM Non repetitive surge peak on-state current (F=50Hz) Top Operating temperature range Tstg Tj Storage temperature range Maximum operating junction temperature TL Maximum lead temperature for soldering during 10s Note 1 : Pulse waveform : 10/1000µs tr=10µs 5/310µs tr=5µs 1/20µs tr=1µs 2/10µs tr=2µs Value Unit 10/1000 µs 5/310µs 1/20µs 2/10µs 2x15 2x25 2x35 2x70 A tp = 0.2 s tp = 5 s tp = 900 s 7.5 4.0 1.5 A 0 to + 70 °C - 55 to + 150 + 150 °C °C 260 °C % I PP tp=1000µs tp=310µs tp=20µs tp=10µs 100 50 0 tr t tp THERMAL RESISTANCE Symbol Rth (j-a) Parameter Junction to ambient Value Unit 170 °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Parameter VR Stand-off voltage IR Leakage current at stand-off voltage VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current C Capacitance I IPP IBO IH IR VR V VBR VBO 3/7 SSRP130B1 ELECTRICAL CHARACTERISTICS between TIP and GND, RING and GND (Tamb=25°C) Symbol Parameter Test conditions (note 1) VBO Breakover voltage (note 2) Min Max Positive voltage Unit V 50Hz 10/700µs 1.2/50µs 2/10µs 200 175 180 250 50Hz 10/700µs 1.2/50µs 2/10µs 280 235 240 340 Negative voltage IBO Breakover current Positive voltage Negative voltage 110 110 mA IH Holding current Positive polarity Negative polarity 150 150 mA IR Leakage current (note 3) VR = +130 V VR = - 185 V 10 10 µA C Capacitance F = 100kHz, V = 100mV, VR = 0V 100 pF Max Unit ELECTRICAL CHARACTERISTICS between TIP and RING (Tamb=25°C) Symbol Parameter Test conditions IR Leakage current (note 3) VR = +185 V VR = - 185 V 10 10 µA C Capacitance F = 100kHz, V = 100mV, VR = 0V 100 pF Note 1 : Note 2 : Note 3 : Positive voltage means between T and G, or between R and G Negative voltage means between G and T, or between G and T See test circuit for VBO parameters IR measured at VR guarantees V BR > VR Fig. 4 : Surge peak current versus overload duration (maximum values). 15 ITSM(A) F=50Hz Tj initial=25°C 10 5 t(s) 0.01 4/7 Min 0.1 1 10 100 1000 SSRP130B1 FUNCTION HOLDING CURRENT (IH) TEST CIRCUIT (GO-NO GO TEST) R - VP D.U.T. VBAT = - 48 V Surge generator This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 ms. 3) The D.U.T will come back off-state within 50 ms max. TEST CIRCUIT FOR VBO parameters : R4 (VP is defined in unload condition) TIP L R2 RING R3 VP R1 C1 C2 G ND Pulse (µs) Vp C1 C2 L R1 R2 R3 R4 IPP Rp tr tp (V) (µF) (nF) (µH) (Ω) (Ω) (Ω) (Ω) (A) (Ω) 10 700 1000 20 200 0 50 15 25 25 25 0 1.2 50 1500 1 33 0 76 13 25 25 30 10 2 10 2500 10 0 1.1 1.3 0 3 3 38 62 5/7 SSRP130B1 ORDER CODE SSRP 130 B 1 RL PACKAGING: RL = tape and reel. = tube SOLID STATE RELAY PROTECTION PACKAGE: 1 = SO8 Plastic. STAND-OFF VOLTAGE MARKING Types Package Marking SSRP130B1 SO8 SSR130 PACKAGE MECHANICAL DATA. SO8 Plastic MARKING : Logo, Date Code, Part Number. REF. DIMENSIONS Millimetres Inches Min. Typ. Max. Min. Typ. Max. 0.069 0.010 0.065 0.019 A a1 a2 0.1 1.75 0.25 0.004 1.65 b 0.35 0.48 0.014 b1 C 0.19 0.25 0.007 0.50 c1 D E Weight : 0.08g 6/7 45°(typ) 4.8 5.8 5.0 6.2 0.189 0.228 0.197 0.244 e 1.27 0.050 e3 F 3.81 0.150 3.8 4.0 L 0.4 1.27 0.016 0.050 0.6 8° (max) 0.024 M S Packaging : Products supplied in antistatic tubes or tape and reel. 0.010 0.020 0.15 0.157 SSRP130B1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7