STMICROELECTRONICS LCP02-150M

LCP02-150M
®
A.S.D.™
PROGRAMMABLE TRANSIENT VOLTAGE
SUPPRESSOR FOR RINGING SLICS
FEATURES
Protection IC recommended for ringing SLICs.
Wide firing voltage range: from -110V to +95V.
Low gate triggering current
Peak pulse current: IPP = 100A (10/1000µs) .
Holding current: IH = 150mA min.
High power dissipation capability
UL497B approved (file E136224)
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MAIN APPLICATIONS
Dual battery supply voltage SLICs
- negative battery supply configuration
- negative & positive battery supply configuration
Central Office (CO)
Private Branch Exchange (PBX)
Digital Loop Carrier (DLC)
Asymmetrical Digital Subscriber Line (ADSL)
Fiber in the Loop (FITL)
Wireless Local Loop (WLL)
Hybrid Fiber Coax (HFC)
ISDN Terminal Adapter
Cable modem
PowerS0-10™
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FUNCTIONAL DIAGRAM
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TIP
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■
■
■
■
Gp
Gn
■
■
GND
DESCRIPTION
The LCP02-150M has been developed to protect
SLICs operating on both negative and positive
supplies, as well as on high voltage SLICs. It
provides crowbar mode protection for both TIP and
RING lines. Surge suppression is assumed for
each wire by two thyristor structures, one
dedicated to positive surges, the second one to
negative surges. Both positive and negative
threshold levels are programmable by two gates
(Gn and Gp). The use of transistors decreases the
battery currents during surge suppression.
The LCP02-150M has high Bellcore Core, ITU-T
and FCC Part 68 lightning surge ratings, ensuring
rugged performance in the field.
The choice of the PowerSo-10TM package is
driven by its high power dissipation capability.
In addition, the LCP02-150M is also specified to
assist a designer to comply with UL1950, IEC950
and CSA C22.2. It is UL 497B approved (file
E136224), and has UL94-V0 resin approved
RING
PIN-OUT CONFIGURATION
GND
Gp
Gn
TIP
RING
TIP
RING
TIP
RING
TIP
RING
GND
TM: ASD is trademarks of STMicroelectronics.
May 2003 - Ed: 4B
1/9
LCP02-150M
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
IH
IGP
Positive gate triggering current
IGN
Negative gate triggering current
IH
Holding current
IRG
Reverse leakage current GATE /
LINE
IRM
Reverse leakage current
VRM
Reverse voltage LINE/ GND
VDGL
Dynamic switching voltage GATE
/ LINE
VGATE
GATE / GND voltage
VRG
C
VGN VRM
IRM
IRM
VRM VGP
IH
Reverse voltage GATE / LINE
Capacitance LINE / GND
COMPLIES WITH FOLLOWING STANDARDS
2/9
Peak surge
voltage
(V)
Voltage
waveform
(µs)
Required
Current Minimum serial
peak current waveform resistor to meet
(A)
(µs)
standard ( )
ITU-T K20
6000
1500
10/700
10/700
150
37.5
5/310
5/310
-
ITU-T K21
6000
1500
10/700
10/700
150
37.5
5/310
5/310
-
VDE0433
2000
10/700
50
5/310
-
VDE0878
2000
1.2/50
50
1/20
-
IEC61000-4-5
level 4
level 4
10/700
1.2/50
100
100
5/310
8/20
-
FCC Part 68
lightning surge type A
1500
800
10/160
10/560
200
100
10/160
10/560
-
FCC Part 68
lightning surge type B
1000
9/720
25
5/320
-
BELLCORE
GR-1089-CORE
First level
2500
1000
2/10
10/1000
500
100
2/10
10/1000
-
BELLCORE
GR-1089-CORE
Second level
5000
2/10
500
2/10
-
LCP02-150M
ABSOLUTE RATINGS (Tamb = 25 °C)
Symbol
Parameter
Value
Unit
IPP
Peak pulse current
10/1000µs
8/20µs
10/560µs
5/310µs
10/160µs
1/20µs
2/10µs
100
250
120
150
200
250
500
A
ITSM
Non repetitive surge peak on-state current
(sinusoidal)
t = 0.2 s
t = 1s
t = 15 min
13
10
3.5
A
See fig.1
-110 to 0
0 to +95
190
V
-20 to +85
°C
- 55 to + 150
°C
260
°C
VGN max Maximum negative battery voltage range
VGP max Maximum positive battery voltage range
∆ Vbat max Total battery supply voltage
Top
Operating temperature range (see note 1)
Tstg
Storage temperature range
TL
Maximum lead temperature for soldering during 10s
Note 1: Within the Top range, the LCP02-150M keeps on operating. The impacts of the ambient temperature are given by derating curves.
Fig. 1: Test circuit
TIP
Gp from +0V to +95V
Gp
TIP
TIP
TIP
TIP
GND
GND
∆ Vbat ≤ 190V
Gn
RING
RING
RING
RING
Gn from -110V to +0V
RING
Gn connected to negative supply voltage
Gp connected to positive supply voltage
∆ Vbat: differential voltage between VGn and VGp
THERMAL RESISTANCE
Symbol
Rth (j-a)
Parameter
Junction to ambient
Value
Unit
60
°C/W
3/9
LCP02-150M
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
1 - PARAMETERS RELATED TO THE NEGATIVE SUPPRESSOR
Symbol
Test conditions
Min.
Max.
Unit
5
mA
IGn
VGn/GND = -60V
Measured at 50Hz
IH-
Go-No Go test, VGn = -60V
IRGL-
Tj = 25°C, VGn/line = -190V
5
µA
VDGL-
VGn/GND = -60V
10/1000µs 1kV RP = 25Ω IPP = 30A
10/700µs 2kV RP = 25Ω IPP = 30A
1.2/50µs 2kV RP = 25Ω IPP = 30A
10
6
12
V
Max.
Unit
VGp/GND = 60V
Measured at 50Hz
10
mA
IRGL+
Tj = 25°C, VGp/line = +190V
5
µA
VDGL+
VGp/GND = +60V
10/1000µs 1kV RP = 25Ω IPP = 30A
10/700µs 2kV RP = 25Ω IPP = 30A
1.2/50µs 2kV RP = 25Ω IPP = 30A
12
8
18
V
Max.
Unit
5
5
µA
150
mA
2 - PARAMETERS RELATED TO THE POSITIVE SUPPRESSOR
Symbol
IGp
Test conditions
Min.
3 - PARAMETERS RELATED TO LINE/GND
Symbol
IR
Coff
4/9
Test conditions
Typ.
Tj = 25°C, VLINE = +90V, VGP/LINE = +1V
Tj = 25°C, VLINE = -105V, VGN/LINE = -1V
VR = -3V, F =1MHz, VGp = 60V, VGn = -60V
150
pF
LCP02-150M
Fig. 2: Non repetitive surge peak on state current
versus overload duration (Tj initial = 25°C).
Fig. 3: Relative variation of holding current versus
junction temperature.
ITSM(A)
25
IH(Tj)/IH[Tj=25°C]
F=50Hz
Tj initial=25C
2
20
1.5
15
1
10
0.5
5
T(°C)
0
t(s)
0
0.01
-20
0.1
1
10
100
0
20
40
60
80
100
1000
Fig. 4: Variation of junction capacitance versus reverse voltage applied (typical calues) with:
VGN = -90V and V GP = +90V.
C(pF)
200
180
160
140
120
100
Vline (V)
80
1
10
Line -
100
Line +
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LCP02-150M
TECHNICAL INFORMATION
Fig. 5: LCP02 concept behavior.
Rs1
L1
TIP
Ign
GND
-Vbat
T1
Th1
Igp
Th2
Gn
Gp
+Vb
Cp
Cn
Rs2
V Tip
T2
RING
GND
L2
V Ring
Figure 5 shows the classical protection circuit using the LCP02-150M crowbar concept. This topology has
been developped to protect the new two-battery voltage SLICs. It allows both positive and negative firing
thresholds to be programmed. The LCP02-150M has two gates (Gn and Gp). Gn is biased to negative battery voltage -Vbat, while Gp is biased to the positive battery voltage +Vb.
When a negative surge occurs on one wire (L1 for example), a current Ign flows through the base of the
transistor T1 and then injects a current in the gate of the thyristor Th1 which fires. The entire surge current
flows through the ground. After the surge, when the current flowing through Th1 becomes less negative
than the negative holding current, Th1 switches off. This holding current IH- is temperature dependant as
per figure 2.
When a positive surge occurs on one wire (L1 for example), a current Igp flows through the base of the
transistor T2 and then injects a current in the gate of the thyristor Th2 which fires. The entire surge current
flows through the ground. After the surge, when the current flowing through Th2 becomes less positive
than the positive holding current Ih+, Th2 switches off. This holding current IH+ is temperature dependant
and is equal to 30mA at 25°C.
The capacitors Cn and Cp are used to speed up the crowbar structure firing during the fast surge rise or
falling edges. This allows to minimize the dynamical breakover voltage at the SLIC Tip and Ring inputs during fast surges. Please note that these capacitors are generally available around the SLIC. To be efficient
they have to be as close as possible to the LCP02-150M gate pins (Gn and Gp) and to the reference
ground track (or plan). The optimized value for Cn and Cp is 220nF.
The series resistors Rs1 and Rs2 represent the fuse, fuse resistors or the PTCs which are needed to withstand the power contact or the power induction tests imposed by the country standards. Taking this factor
into account, the actual lightning surge current flowing through the LCP02-150M is equal to :
I surge = Vsurge / (Rg + Rs)
With
V surge = peak surge voltage imposed by the standard.
Rg = series resistor of the surge generator
Rs = series resistor of the line card (e.g. PTC)
The LCP02-150M topology is particularly optimized for the new telecom applications such as cable modem, fiber in the loop, WLL systems, and decentralized central office for example. The schematics of figures
6 and 7 give the 2 most frequent topologies used for these emergent applications.
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LCP02-150M
Fig. 6: Protection of SLIC with positive and negative battery voltages.
Line card
-Vbat
Rs (*)
TIP
Gn
Line
LCP02
220nF
GND
TIP
Gp
SLIC
220nF
RING
Rs (*)
RING
+Vb
Rs (*) = PTC or Resistor fuse
Fig. 7: Protection of high voltage SLIC
Line card
-Vbat
Rs (*)
TIP
Gn
Line
220nF
GND
TIP
LCP02
RING
Gp
SLIC
Rs (*)
RING
Rs (*) = PTC or Resistor fuse
Figure 6 shows the classical protection topology for SLIC using both positive and negative battery voltages. With such a protection the SLIC is protected against surge over +Vb and lower than -Vbat. In this
case, +Vb can be programmed up to +95V while -Vbat can be programmed down to -110V. Please note
that the differential voltage does not exceed ∆Vbat max at 190V.
Figure 7 gives the protection topology for the new SLIC using high negative voltage down to -110V.
7/9
LCP02-150M
PACKAGE MECHANICAL DATA
PowerSO-10™ (Plastic)
DIMENSIONS
REF.
B
Min.
0.10 A B
10
H
6
E
E3 E1
E2
5
1
SEATING
PLANE
e
B
A
DETAIL "A"
C
0.25 M
h
Q
D
D1
A
F
SEATING
PLANE
A1
A1
L
DETAIL "A"
a
E4
FOOTPRINT DIMENSIONS (in millimeters)
0.54 - 0.60
0.67 - 0.73
9.5
8/9
10.8 - 11.0
6.30
14.6 - 14.9
1.27
Millimeters
A
A1
B
C
D
D1
E
E1
E2
E3
E4
e
F
H
h
L
Q
a
Max.
3.35
3.65
0.00
0.10
0.40
0.60
0.35
0.55
9.40
9.60
7.40
7.60
9.30
9.50
7.20
7.40
7.20
7.60
6.10
6.35
5.90
6.10
1.27 Typ.
1.25
1.35
13.80
14.40
0.5 Typ.
1.20
1.80
1.70 Typ
0°
8°
Inches
Min.
Max.
0.131
0.143
0.00
0.0039
0.0157 0.0236
0.0137 0.0217
0.370
0.378
0.291
0.299
0.366
0.374
0.283
0.291
0.283
0.299
0.240
0.250
0.232
0.240
0.05 Typ.
0.0492 0.0531
0.543
0.567
0.019 Typ.
0.0472 0.0708
0.067 Typ.
0°
8°
LCP02-150M
ORDER CODE
Ordering Type
Marking
Package
Weight
Base qty
Delivery mode
LCP02-150M
LCP02-150M
PowerSO-10
1.02 g
50
Tube
600
Tape & Reel
LCP02-150M-TR
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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