STMICROELECTRONICS SSRP105B1RL

SSRP105B1
®
DUAL ASYMMETRICAL OVERVOLTAGE
PROTECTION FOR TELECOM LINE
Application Specific Discretes
ASD™
MAIN APPLICATIONS
Where asymmetrical protection against lightning
strikes and other transient overvoltages is required :
■ Solid-State relays
■ SLIC with integrated ring generator
DESCRIPTION
The SSRP105B1 is a dual asymmetrical transient
voltage suppressor designed to protect a
solid-state ring relay or SLICs with integrated ring
generator from overvoltages.
The asymmetrical protection configuration is
necessary to allow the use of all different types of
ringing schemes.
SO-8
FUNCTIONAL DIAGRAM
FEATURES
■
■
■
Dual bi-directional asymmetrical protection
Stand-off voltages:
● Between Line and Ground
+105V for positive voltages
-180V for negative voltages
● Between Line and Line
+180V for positive voltages
-180V for negative voltages
Peak pulse current: IPP = 50A (5/310µs)
Holding current:
● IH+ = 100mA
● IH- = 150mA
TIP
1
8
GND
NC
2
7
GND
NC
3
6
GND
RING
4
5
GND
COMPLY WITH THE FOLLOWING STANDARDS
Peak Surge
Voltage
(V)
Voltage
Waveform
(µs)
Current
Waveform
(µs)
Required
Peak
current
(A)
Min. serial
resistor to meet
standards
(Ω)
ITU-T K20 / K21
1500
10/700
5/310
38
-
VDE0433
2000
10/700
5/310
50
-
Level 3
Level 4
10/700
1.2/50
5/310
8/20
50
100
-
FCC Part 68
1500
800
10/160
10/560
10/160
10/560
200
100
18
10
BELLCORE
GR1089 First level
2500
1000
2/10
10/1000
2/10
10/1000
500
100
10
19
IEC61000-4-5
TM: ASD is trademarks of STMicroelectronics.
October 2002 - Ed: 1A
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SSRP105B1
APPLICATION INFORMATION
Fig. 1: Topology of the classical line card protection.
Fig. 2: Classical use of the SSRP105B1.
R
PTC
TIP
PTC
R
SLIC
2nd
1st
LINE
TIP
stage
stage
R
PTC
SLIC (*)
RING
PTC
R
RING
± VRING
SSRP105B1
VRINGBAT
(*) SLIC with integrated ring generator or Solid-State Relay
Ring generator
The classical line card requires protection before the
ring relay and a second one for the SLIC (figure 1).
The use of new SLICs with integrated ring
generator or board based on solid-state ring relay
suppresses this second protection (figure 2).
Then, the only remaining stage, located between
the line and the ring relay, has to optimize the
protection.
The classical symmetrical first stage protector
becomes not sufficient to avoid any circuit
destruction during surges.
The SSRP105B1 device takes into account this
fact and is based on asymmetrical voltage
characteristics (figure 3a). The ring signal being
shifted back by the battery voltage, the
SSRP105B1 negative breakover value VBO- is
greater than the positive one VBO+. This point
guarantees a protection operation very close to the
peak of the normal operating voltage without any
disturbance of the ring signal.
Fig. 3: SSRP105B1 electrical characteristics.
a: Line to ground characteristics.
b: Line to line characteristics.
I
I
VBO-
VBOVBO+
V
In addition with the 2 crowbar functions which
perform the protection of both TIP and RING lines
versus ground, a third cell assumes the differential
mode protection of the SLIC. The breakover
voltage values of this third cell are the same for
2/6
VBO+
V
both positive and negative parts of the
characteristics and are equivalent to the negative
breakover voltage value of the TIP and RING lines
versus GND cells (figure 3b).
SSRP105B1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
Value
Unit
IPP
Peak pulse current (see note 1)
10 / 1000 µs
10 / 560µs
5 / 310µs
10 / 160µs
8 / 20µs
2 / 10µs
35
45
50
60
120
175
A
ITSM
Non repetitive surge peak on-state current
(F=50Hz)
tp = 0.2 s
tp = 5 s
tp = 15 min.
8.5
4.5
2.5
A
Top
Operating temperature range
0 to + 70
°C
Tstg
Tj
Storage temperature range
Maximum operating junction temperature
- 55 to + 150
+ 150
°C
°C
TL
Maximum lead temperature for soldering during 10s
260
°C
Note 1 : Pulse waveform :
10/1000µs tr=10µs
10/560µs
tr=10µs
5/310µs
tr=5µs
10/160µs
tr=10µs
8/20µs
tr=8µs
2/10µs
tr=2µs
% I PP
100
tp=1000µs
tp=560µs
tp=310µs
tp=160µs
tp=20µs
tp=10µs
50
0
tr
t
tp
THERMAL RESISTANCE
Symbol
Rth (j-a)
Parameter
Junction to ambient
Value
Unit
170
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
VR
Stand-off voltage
IR
Leakage current at stand-off voltage
VBR
Breakdown voltage
VBO
Breakover voltage
IH
Holding current
IBO
Breakover current
IPP
Peak pulse current
C
Capacitance
I
IPP
IH
IR
V
VR VBR VBO
3/6
SSRP105B1
ELECTRICAL CHARACTERISTICS between TIP and GND, RING and GND (Tamb=25°C)
Symbol
VBO
Parameter
Test conditions (note 1)
Breakover voltage Positive voltage
. 50Hz
(note 2)
. 10/700µs
Negative voltage
Min.
Typ.
Max.
Unit
165
165
V
225
225
. 50Hz
. 10/700µs
IH
Holding current
Positive polarity
Negative polarity
IR
Leakage current
(note 3)
VR = +105 V
VR = - 180 V
C
Capacitance
F = 1MHz, VRMS = 1V, VR(T/G) = -5V
F = 1MHz, VRMS = 1V, VR(T/G) = -50V
100
150
mA
10
10
30
16
µA
pF
ELECTRICAL CHARACTERISTICS between TIP and RING (Tamb=25°C)
Symbol
IR
Note 1:
Note 2:
Note 3:
Parameter
Leakage current (note 3)
Test conditions
VR = +180 V
VR = - 180 V
Min
Max
Unit
10
10
µA
Positive voltage means between T and G, or between R and G.
Negative voltage means between G and T, or between G and R.
See test circuit for VBO parameters
IR measured at VR guarantees VBR > VR
Fig. 4: Relative variation of holding current versus
junction temperature.
Fig. 5: Non-repetitive peak on-state current versus
overload duration (Tj initial = +25°C)..
IH(Tamb)/IH(Tamb=25°C)
ITSM(A)
1.2
25
F= 50Hz
1
20
0.8
15
0.6
10
0.4
5
0.2
0
0
20
40
Tamb(°C)
60
80
0
0.01
0.1
1
Fig. 6: Capacitance versus applied reverse
voltages (typical values).
C(pF)
100
Tj= 25°C
F= 1MHz
Vrms= 1V
TIPor RING(+) / GND(-)
10
GND(+) / TIP or RING(-)
1
1
4/6
10
10
tp(s)
VR(V)
100
1000
100
1000
SSRP105B1
FUNCTION HOLDING CURRENT (IH) TEST CIRCUIT (GO-NO GO TEST)
R
D.U.T.
VBAT = - 48 V
Surge generator
This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional test
circuit.
TEST PROCEDURE :
1) Adjust the current level at the IH value by short circuiting the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000µs.
3) The D.U.T will come back off-state within 50 ms max.
TEST CIRCUIT FOR VBO PARAMETERS:
R4
TIP
L
R2
RING
R3
C1
VP
R1
C2
GND
Pulse (µs)
Vp
C1
C2
L
R1
R2
R3
R4
IPP
Rp
tr
tp
(V)
(µF)
(nF)
(µH)
(Ω)
(Ω)
(Ω)
(Ω)
(A)
(Ω)
10
700
1000
20
200
0
50
15
25
25
38
0
1.2
50
1500
1
33
0
76
13
25
25
30
10
2
10
2500
10
0
1.1
1.3
0
3
3
38
62
1
RL
ORDER CODE
SSRP
105
B
SOLID STATE RELAY
PROTECTION
STAND-OFF VOLTAGE
PACKAGING:
RL = Tape and Reel
= Tube
PACKAGE:
1 = SO-8 Plastic
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SSRP105B1
OTHER INFORMATION
Ordering type
Marking
Package
Weight
SSRP105B1
SSRP105B1RL
SSR105
SO-8
0.08 g.
Base Qty (pcs) Delivery mode
100
2500
Tube
Tape & Reel
PACKAGE MECHANICAL DATA
SO-8 (Plastic)
DIMENSIONS
REF.
C
(Seating
Plane)
ddd C
A2
0.25mm
(Gage Plane)
A
A1
e
B
h x 45°
k
L
D
8
5
E
1
4
Inches
Min.
Max.
Min.
Max.
A
1.35
1.75
0.053
0.069
A1
0.1
0.25
0.004
0.010
A2
1.10
1.65
0.043
0.065
B
0.33
0.51
0.013
0.020
C
0.19
0.25
0.007
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.00
0.150
0.157
e
H
Millimetres
1.27 Typ.
0.05 Typ.
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.019
L
0.40
1.27
0.016
0.050
k
ddd
8° (max)
0.100
0.004
FOOT-PRINT DIMENSIONS (in millimeters)
6.8
0.6
4.2
1.27
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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