512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet FEATURES: • Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF512/010/020/040 – 2.7-3.6V for SST39VF512/010/020/040 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 10 mA (typical) – Standby Current: 1 µA (typical) • Sector-Erase Capability – Uniform 4 KByte sectors • Fast Read Access Time: – 45 ns for SST39LF512/010/020/040 – 55 ns for SST39LF020/040 – 70 and 90 ns for SST39VF512/010/020/040 • Latched Address and Data • Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 1 second (typical) for SST39LF/VF512 2 seconds (typical) for SST39LF/VF010 4 seconds (typical) for SST39LF/VF020 8 seconds (typical) for SST39LF/VF040 • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 32-lead PLCC – 32-lead TSOP (8mm x 14mm) – 48-ball TFBGA (6mm x 8mm) for 1 Mbit PRODUCT DESCRIPTION The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/ 010/020/040 devices write (Program or Erase) with a 3.03.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories. significantly improves performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. Featuring high performance Byte-Program, the SST39LF512/010/020/040 and SST39VF512/010/020/ 040 devices provide a maximum Byte-Program time of 20 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, they are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 395 1 To meet surface mount requirements, the SST39LF512/ 010/020/040 and SST39VF512/010/020/040 devices are offered in 32-lead PLCC and 32-lead TSOP packages. The 39LF/VF010 is also offered in a 48-ball TFBGA package. See Figures 1 and 2 for pinouts. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet Device Operation pulse, while the command (30H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit methods. See Figure 9 for timing waveforms. Any commands written during the Sector-Erase operation will be ignored. Commands are used to initiate the memory operation functions of the device. Commands are written to the device using standard microprocessor write sequences. A command is written by asserting WE# low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. Chip-Erase Operation The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 devices provide a Chip-Erase operation, which allows the user to erase the entire memory array to the “1s” state. This is useful when the entire device must be quickly erased. Read The Read operation of the SST39LF512/010/020/040 and SST39VF512/010/020/040 device is controlled by CE# and OE#, both have to be low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high. Refer to the Read cycle timing diagram for further details (Figure 4). The Chip-Erase operation is initiated by executing a sixbyte Software Data Protection command sequence with Chip-Erase command (10H) with address 5555H in the last byte sequence. The internal Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the internal Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 4 for the command sequence, Figure 10 for timing diagram, and Figure 18 for the flowchart. Any commands written during the ChipErase operation will be ignored. Byte-Program Operation The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 are programmed on a byte-by-byte basis. Before programming, one must ensure that the sector, in which the byte which is being programmed exists, is fully erased. The Program operation consists of three steps. The first step is the three-byte-load sequence for Software Data Protection. The second step is to load byte address and byte data. During the Byte-Program operation, the addresses are latched on the falling edge of either CE# or WE#, whichever occurs last. The data is latched on the rising edge of either CE# or WE#, whichever occurs first. The third step is the internal Program operation which is initiated after the rising edge of the fourth WE# or CE#, whichever occurs first. The Program operation, once initiated, will be completed, within 20 µs. See Figures 5 and 6 for WE# and CE# controlled Program operation timing diagrams and Figure 15 for flowcharts. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any commands written during the internal Program operation will be ignored. Write Operation Status Detection The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 devices provide two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system write cycle time. The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled after the rising edge of WE# which initiates the internal Program or Erase operation. The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejection is valid. Sector-Erase Operation The Sector-Erase operation allows the system to erase the device on a sector-by-sector basis. The sector architecture is based on uniform sector size of 4 KByte. The SectorErase operation is initiated by executing a six-byte-command sequence with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The sector address is latched on the falling edge of the sixth WE# ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 2 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet Data# Polling (DQ7) Software Data Protection (SDP) When the SST39LF512/010/020/040 and SST39VF512/ 010/020/040 are in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. The device is then ready for the next operation. During internal Erase operation, any attempt to read DQ7 will produce a ‘0’. Once the internal Erase operation is completed, DQ7 will produce a ‘1’. The Data# Polling is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector- or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 7 for Data# Polling timing diagram and Figure 16 for a flowchart. The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 provide the JEDEC approved Software Data Protection scheme for all data alteration operation, i.e., Program and Erase. Any Program operation requires the inclusion of a series of three byte sequence. The three byte-load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write operations, e.g., during the system power-up or powerdown. Any Erase operation requires the inclusion of six byte load sequence. These devices are shipped with the Software Data Protection permanently enabled. See Table 4 for the specific software command codes. During SDP command sequence, invalid commands will abort the device to read mode, within TRC. Toggle Bit (DQ6) Product Identification During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating 0s and 1s, i.e., toggling between 0 and 1. When the internal Program or Erase operation is completed, the toggling will stop. The device is then ready for the next operation. The Toggle Bit is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector- or ChipErase, the Toggle Bit is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 8 for Toggle Bit timing diagram and Figure 16 for a flowchart. The Product Identification mode identifies the devices as the SST39LF/VF512, SST39LF/VF010, SST39LF/VF020 and SST39LF/VF040 and manufacturer as SST. This mode may be accessed by software operations. Users may use the Software Product Identification operation to identify the part (i.e., using the device ID) when using multiple manufacturers in the same socket. For details, see Table 4 for software operation, Figure 11 for the Software ID Entry and Read timing diagram, and Figure 17 for the Software ID entry command sequence flowchart. Data Protection TABLE 1: PRODUCT IDENTIFICATION The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 provide both hardware and software features to protect nonvolatile data from inadvertent writes. Manufacturer’s ID Address Data 0000H BFH Device ID Hardware Data Protection SST39LF/VF512 0001H D4H Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a Write cycle. SST39LF/VF010 0001H D5H SST39LF/VF020 0001H D6H VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 1.5V. SST39LF/VF040 0001H D7H T1.1 395 Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down. Product Identification Mode Exit/Reset In order to return to the standard Read mode, the Software Product Identification mode must be exited. Exit is accomplished by issuing the Software ID Exit command sequence, which returns the device to the Read operation. Please note that the Software ID Exit command is ignored during an internal Program or Erase operation. See Table 4 for software command codes, Figure 12 for timing waveform, and Figure 17 for a flowchart. ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 3 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet FUNCTIONAL BLOCK DIAGRAM SuperFlash Memory X-Decoder Memory Address Address Buffers & Latches Y-Decoder CE# I/O Buffers and Data Latches Control Logic OE# WE# DQ7 - DQ0 A17 WE# NC NC A17 WE# WE# WE# A18 VDD VDD VDD VDD 4 3 2 1 32 31 30 29 NC NC NC A16 A15 A16 NC A16 A15 A15 A15 A12 A12 A12 SST39LF/VF040 SST39LF/VF020 SST39LF/VF010 SST39LF/VF512 A12 SST39LF/VF512 SST39LF/VF010 SST39LF/VF020 SST39LF/VF040 395 ILL B1.1 SST39LF/VF512 SST39LF/VF010 SST39LF/VF020 SST39LF/VF040 A7 A7 A7 5 A14 A14 A14 A14 A6 A6 A6 A6 6 28 A13 A13 A13 A13 A5 A5 A5 A5 7 27 A8 A8 A8 A8 A4 A4 A4 A4 8 26 A9 A9 A9 A9 A3 A3 A3 A3 9 25 A11 A11 A11 A11 A2 A2 A2 A2 10 24 OE# OE# OE# OE# A1 A1 A1 A1 11 23 A10 A10 A10 A10 A0 A0 A0 A0 12 22 CE# CE# CE# CE# DQ0 DQ0 DQ0 DQ0 13 21 14 15 16 17 18 19 20 DQ7 DQ7 DQ7 DQ7 DQ3 DQ4 DQ5 DQ6 DQ3 DQ4 DQ5 DQ6 DQ3 DQ4 DQ5 DQ6 DQ5 DQ6 VSS VSS VSS VSS DQ4 DQ2 DQ2 DQ2 DQ2 DQ3 DQ1 DQ1 DQ1 32-lead PLCC Top View DQ1 SST39LF/VF040 SST39LF/VF020 SST39LF/VF010 SST39LF/VF512 A7 395 ILL F02b.3 FIGURE 1: PIN ASSIGNMENTS FOR 32-LEAD PLCC ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 4 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet SST39LF/VF040 SST39LF/VF020 SST39LF/VF010 SST39LF/VF512 A11 A9 A8 A13 A14 A17 WE# VDD A18 A16 A15 A12 A7 A6 A5 A4 A11 A9 A8 A13 A14 A17 WE# VDD NC A16 A15 A12 A7 A6 A5 A4 A11 A9 A8 A13 A14 NC WE# VDD NC A16 A15 A12 A7 A6 A5 A4 A11 A9 A8 A13 A14 NC WE# VDD NC NC A15 A12 A7 A6 A5 A4 SST39LF/VF512 SST39LF/VF010 SST39LF/VF020 SST39LF/VF040 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Standard Pinout Top View Die Up OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 395 ILL F01.0 FIGURE 2: PIN ASSIGNMENTS FOR 32-LEAD TSOP (8MM X 14MM) TOP VIEW (balls facing down) SST39LF/VF010 6 A14 A13 A15 A16 NC NC NC VSS 5 A9 A8 A11 A12 NC A10 DQ6 DQ7 3 2 1 WE# NC NC NC DQ5 NC VDD DQ4 NC NC NC NC DQ2 DQ3 VDD NC A7 NC A6 A5 DQ0 NC A3 A4 A2 A1 A0 CE# OE# VSS A D E B C FIGURE 3: PIN ASSIGNMENT FOR 48-BALL TFBGA (6MM ©2001 Silicon Storage Technology, Inc. F X NC DQ1 G 395 ILL F01a.0.eps 4 H 8MM) FOR 1 MBIT S71150-03-000 6/01 5 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet TABLE 2: PIN DESCRIPTION Symbol Pin Name Functions AMS1-A0 Address Inputs To provide memory addresses. During Sector-Erase AMS-A12 address lines will select the sector. During Block-Erase AMS-A16 address lines will select the block. DQ7-DQ0 Data Input/output To output data during Read cycles and receive input data during Write cycles. Data is internally latched during a Write cycle. The outputs are in tri-state when OE# or CE# is high. CE# Chip Enable To activate the device when CE# is low. OE# Output Enable To gate the data output buffers. WE# Write Enable To control the Write operations. VDD Power Supply To provide power supply voltage: VSS Ground NC No Connection 3.0-3.6V for SST39LF512/010/020/040 2.7-3.6V for SST39VF512/010/020/040 Unconnected pins. T2.1 395 1. AMS = Most significant address AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020, and A18 for SST39LF/VF040 TABLE 3: OPERATION MODES SELECTION Mode CE# OE# WE# Read Program VIL VIL VIL VIH Address VIH DOUT AIN VIL DIN AIN VIL X1 Sector address, XXH for Chip-Erase Erase VIL Standby VIH X X High Z X X VIL X High Z/ DOUT X X X VIH High Z/ DOUT X VIL VIL VIH Write Inhibit VIH DQ Product Identification Software Mode See Table 4 T3.4 395 1. X can be VIL or VIH, but no other value. ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 6 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet TABLE 4: SOFTWARE COMMAND SEQUENCE Command Sequence 1st Bus Write Cycle Addr1 Data 2nd Bus Write Cycle Addr1 Data 3rd Bus Write Cycle Addr1 4th Bus Write Cycle Data Addr1 Data Data 5th Bus Write Cycle 6th Bus Write Cycle Addr1 Data Addr1 Data Byte-Program 5555H AAH 2AAAH 55H 5555H A0H BA2 Sector-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H SAX3 30H 5555H AAH 2AAAH 55H 5555H 10H Chip-Erase 5555H AAH 2AAAH 55H 5555H 80H Software ID Entry4,5 5555H AAH 2AAAH 55H 5555H 90H 2AAAH 55H 5555H F0H Software ID Exit6 XXH F0H Software ID Exit6 5555H AAH T4.2 395 1. Address format A14-A0 (Hex), Address A15 can be VIL or VIH, but no other value, for the Command sequence for SST39LF/VF512. Addresses A15-A16 can be VIL or VIH, but no other value, for the Command sequence for SST39LF/VF010. Addresses A15-A17 can be VIL or VIH, but no other value, for the Command sequence for SST39LF/VF020. Addresses A15-A18 can be VIL or VIH, but no other value, for the Command sequence for SST39LF/VF040. 2. BA = Program Byte address 3. SAX for Sector-Erase; uses AMS-A12 address lines AMS = Most significant address AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020, and A18 for SST39LF/VF040 4. The device does not remain in Software Product ID Mode if powered down. 5. With AMS-A1 =0; SST Manufacturer’s ID= BFH, is read with A0 = 0, SST39LF/VF512 Device ID = D4H, is read with A0 = 1 SST39LF/VF010 Device ID = D5H, is read with A0 = 1 SST39LF/VF020 Device ID = D6H, is read with A0 = 1 SST39LF/VF040 Device ID = D7H, is read with A0 = 1 6. Both Software ID Exit operations are equivalent Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD + 0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to VDD + 1.0V Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 13.2V Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA 1. Outputs shorted for no more than one second. No more than one output shorted at a time. OPERATING RANGE Range Commercial OPERATING RANGE Range Commercial Industrial FOR SST39LF512/010/020/040 Ambient Temp VDD 0°C to +70°C 3.0-3.6V FOR AC CONDITIONS VDD 0°C to +70°C 2.7-3.6V -40°C to +85°C 2.7-3.6V TEST Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns Output Load CL = 30 pF for SST39LF512/010/020/040 SST39VF512/010/020/040 Ambient Temp OF CL = 100 pF for SST39VF512/010/020/040 See Figures 13 and 14 ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 7 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet TABLE 5: DC OPERATING CHARACTERISTICS VDD = 3.0-3.6V FOR SST39LF512/010/020/040 AND 2.7-3.6V FOR SST39VF512/010/020/040 Limits Symbol Parameter IDD Power Supply Current Min Max Units Test Conditions Address input=VIL/VIH, at f=1/TRC Min VDD=VDD Max Read 20 mA CE#=OE#=VIL, WE#=VIH, all I/Os open Write 20 mA CE#=WE#=VIL, OE#=VIH ISB Standby VDD Current 15 µA CE#=VIHC, VDD=VDD Max ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.8 V VDD=VDD Min VIH Input High Voltage 0.7VDD V VDD=VDD Max VIHC Input High Voltage (CMOS) VDD-0.3 VOL Output Low Voltage VOH Output High Voltage 0.2 VDD-0.2 V VDD=VDD Max V IOL=100 µA, VDD=VDD Min V IOH=-100 µA, VDD=VDD Min T5.2 395 TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 Power-up to Read Operation 100 µs Power-up to Program/Erase Operation 100 µs TPU-WRITE 1 T6.1 395 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 7: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 I/O Pin Capacitance VI/O = 0V 12 pF Input Capacitance VIN = 0V 6 pF CIN 1 T7.0 395 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 8: RELIABILITY CHARACTERISTICS Symbol NEND 1 Parameter Minimum Specification Endurance TDR1 Data Retention ILTH1 Latch Up Units Test Method 10,000 Cycles JEDEC Standard A117 100 Years JEDEC Standard A103 100 + IDD mA JEDEC Standard 78 T8.2 395 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 8 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet AC CHARACTERISTICS TABLE 9: READ CYCLE TIMING PARAMETERS VDD = 3.0-3.6V FOR SST39LF512/010/020/040 SST39LF512-45 SST39LF010-45 SST39LF020-45 SST39LF040-45 Symbol Parameter Min AND 2.7-3.6V FOR SST39VF512/010/020/040 SST39LF020-55 SST39LF040-55 Max Min 45 Max 55 SST39VF512-70 SST39VF010-70 SST39VF020-70 SST39VF040-70 Min Max Min Max Units TRC Read Cycle Time TCE Chip Enable Access Time TAA Address Access Time 45 55 70 90 ns TOE Output Enable Access Time 30 30 35 45 ns TCLZ1 CE# Low to Active Output 0 0 0 0 ns TOLZ1 OE# Low to Active Output 0 0 0 0 ns TCHZ1 CE# High to High-Z Output 15 15 25 30 ns TOHZ1 OE# High to High-Z Output 15 15 25 30 ns TOH1 Output Hold from Address Change 45 70 SST39VF512-90 SST39VF010-90 SST39VF020-90 SST39VF040-90 90 55 0 0 70 0 ns 90 ns 0 ns T9.2 395 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 10: PROGRAM/ERASE CYCLE TIMING PARAMETERS Symbol Parameter TBP Byte-Program Time TAS Address Setup Time 0 ns TAH Address Hold Time 30 ns TCS WE# and CE# Setup Time 0 ns TCH WE# and CE# Hold Time 0 ns TOES OE# High Setup Time 0 ns TOEH OE# High Hold Time 10 ns TCP CE# Pulse Width 40 ns TWP WE# Pulse Width 40 ns 1 Min Max Units 20 µs WE# Pulse Width High 30 ns TCPH1 CE# Pulse Width High 30 ns TDS Data Setup Time 40 ns TDH1 Data Hold Time 0 ns TIDA1 Software ID Access and Exit Time 150 ns TSE Sector-Erase 25 ms TSCE Chip-Erase 100 ms TWPH T10.1 395 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 9 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet TAA TRC ADDRESS AMS-0 TCE CE# TOE OE# TOHZ TOLZ VIH WE# DQ7-0 Note: TCHZ TOH TCLZ HIGH-Z HIGH-Z DATA VALID DATA VALID 395 ILL F03.0 AMS = Most significant address AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020 and A18 for SST39LF/VF040 FIGURE 4: READ CYCLE TIMING DIAGRAM INTERNAL PROGRAM OPERATION STARTS TBP 5555 TAH ADDRESS AMS-0 2AAA 5555 ADDR TDH TWP WE# TAS TDS TWPH OE# TCH CE# TCS DQ7-0 Note: AA 55 SW0 SW1 A0 SW2 DATA BYTE (ADDR/DATA) 395 ILL F04.0 AMS = Most significant address AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020 and A18 for SST39LF/VF040 FIGURE 5: WE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 10 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet INTERNAL PROGRAM OPERATION STARTS TBP 5555 TAH ADDRESS AMS-0 2AAA 5555 ADDR TDH TCP CE# TAS TDS TCPH OE# TCH WE# TCS DQ7-0 Note: AA 55 A0 DATA SW0 SW1 SW2 BYTE (ADDR/DATA) 395 ILL F05.0 AMS = Most significant address AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020 and A18 for SST39LF/VF040 FIGURE 6: CE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM ADDRESS AMS-0 TCE CE# TOES TOEH OE# TOE WE# DQ7 D Note: D# D# AMS = Most significant address AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020 and A18 for SST39LF/VF040 D 395 ILL F06.0 FIGURE 7: DATA# POLLING TIMING DIAGRAM ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 11 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet ADDRESS AMS-0 TCE CE# TOES TOE TOEH OE# WE# DQ6 TWO READ CYCLES Note: WITH SAME OUTPUTS AMS = Most significant address AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020 and A18 for SST39LF/VF040 395 ILL F07.0 FIGURE 8: TOGGLE BIT TIMING DIAGRAM TSE SIX-BYTE CODE FOR SECTOR-ERASE 5555 ADDRESS AMS-0 2AAA 5555 5555 2AAA SAX CE# OE# TWP WE# DQ7-0 AA 55 80 AA 55 30 SW0 SW1 SW2 SW3 SW4 SW5 334 ILL F08.0 Note: This device also supports CE# controlled Sector-Erase operation. The WE# and CE# signals are interchageable as long as minmum timings are met. (See Table 10) SAX = Sector Address AMS = Most significant address AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020 and A18 for SST39LF/VF040 FIGURE 9: WE# CONTROLLED SECTOR-ERASE TIMING DIAGRAM ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 12 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet TSCE SIX-BYTE CODE FOR CHIP-ERASE 5555 ADDRESS AMS-0 2AAA 5555 5555 2AAA 5555 CE# OE# TWP WE# DQ7-0 AA 55 80 AA 55 10 SW0 SW1 SW2 SW3 SW4 SW5 334 ILL F17.0 Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are interchageable as long as minmum timings are met. (See Table 10) AMS = Most significant address AMS = A15 for SST39LF/VF512, A16 for SST39LF/VF010, A17 for SST39LF/VF020 and A18 for SST39LF/VF040 FIGURE 10: WE# CONTROLLED CHIP-ERASE TIMING DIAGRAM Three-byte sequence for Software ID Entry 5555 ADDRESS A14-0 2AAA 5555 0000 0001 CE# OE# TIDA TWP WE# TWPH DQ7-0 TAA AA 55 90 SW0 SW1 SW2 BF Device ID 395 ILL F09.2 Note: Device ID = D4H for SST39LF/VF512, D5H for SST39LF/VF010, D6H for SST39LF/VF020, and D7H for SST39LF/VF040. FIGURE 11: SOFTWARE ID ENTRY AND READ ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 13 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet THREE-BYTE SEQUENCE FOR SOFTWARE ID EXIT AND RESET ADDRESS A14-0 DQ7-0 5555 2AAA AA 5555 55 F0 TIDA CE# OE# TWP WE# T WHP SW0 SW1 SW2 395 ILL F10.0 FIGURE 12: SOFTWARE ID EXIT AND RESET ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 14 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet VIHT INPUT VIT REFERENCE POINTS VOT OUTPUT VILT 395 ILL F12.1 AC test inputs are driven at VIHT (0.9 VDD) for a logic “1” and VILT (0.1 VDD) for a logic “0”. Measurement reference points for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% ↔ 90%) are <5 ns. Note: VIT - VINPUT Test VOT - VOUTPUT Test VIHT - VINPUT HIGH Test VILT - VINPUT LOW Test FIGURE 13: AC INPUT/OUTPUT REFERENCE WAVEFORMS TO TESTER TO DUT CL 395 ILL F11.1 FIGURE 14: A TEST LOAD EXAMPLE ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 15 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet Start Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: A0H Address: 5555H Load Byte Address/Byte Data Wait for end of Program (TBP, Data# Polling bit, or Toggle bit operation) Program Completed 395 ILL F13.1 FIGURE 15: BYTE-PROGRAM ALGORITHM ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 16 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet Internal Timer Toggle Bit Data# Polling Byte-Program/ Erase Initiated Byte-Program/ Erase Initiated Byte-Program/ Erase Initiated Read byte Read DQ7 Wait TBP, TSCE, or TSE Read same byte Program/Erase Completed No Is DQ7 = true data? Yes No Does DQ6 match? Program/Erase Completed Yes Program/Erase Completed 395 ILL F14.0 FIGURE 16: WAIT OPTIONS ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 17 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet Software ID Entry Command Sequence Software ID Exit & Reset Command Sequence Load data: AAH Address: 5555H Load data: AAH Address: 5555H Load data: F0H Address: XXH Load data: 55H Address: 2AAAH Load data: 55H Address: 2AAAH Wait TIDA Load data: 90H Address: 5555H Load data: F0H Address: 5555H Return to normal operation Wait TIDA Wait TIDA Read Software ID Return to normal operation 395 ILL F15.2 FIGURE 17: SOFTWARE ID COMMAND FLOWCHARTS ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 18 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet Chip-Erase Command Sequence Sector-Erase Command Sequence Load data: AAH Address: 5555H Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: 55H Address: 2AAAH Load data: 80H Address: 5555H Load data: 80H Address: 5555H Load data: AAH Address: 5555H Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: 55H Address: 2AAAH Load data: 10H Address: 5555H Load data: 30H Address: SAX Wait TSCE Wait TSE Chip erased to FFH Sector erased to FFH 395 ILL F16.1 FIGURE 18: ERASE COMMAND SEQUENCE ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 19 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet PRODUCT ORDERING INFORMATION Device SST39xFxxx Speed - XX Suffix1 - XX Suffix2 - XX Package Modifier H = 32 leads K = 48 balls Numeric = Die modifier Package Type N = PLCC W = TSOP (die up) (8mm x 14mm) B3 = TFBGA (6mm x 8mm) Temperature Range C = Commercial = 0°C to +70°C I = Industrial = -40°C to +85°C Minimum Endurance 4 = 10,000 cycles Read Access Speed 45 = 45 ns 55 = 55 ns 70 = 70 ns 90 = 90 ns Device Density 512 = 512 Kilobit 010 = 1 Megabit 020 = 2 Megabit 040 = 4 Megabit Voltage L = 3.0-3.6V V = 2.7-3.6V ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 20 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet Valid combinations for SST39LF512 SST39LF512-45-4C-NH SST39LF512-45-4C-WH Valid combinations for SST39VF512 SST39VF512-70-4C-NH SST39VF512-70-4C-WH SST39VF512-90-4C-NH SST39VF512-90-4C-U4 SST39VF512-90-4C-WH SST39VF512-70-4I-NH SST39VF512-70-4I-WH SST39VF512-90-4I-NH SST39VF512-90-4I-WH Valid combinations for SST39LF010 SST39LF010-45-4C-NH SST39LF010-45-4C-WH SST39LF010-45-4C-B3K Valid combinations for SST39VF010 SST39VF010-70-4C-NH SST39VF010-70-4C-WH SST39VF010-70-4C-B3K SST39VF010-90-4C-NH SST39VF010-90-4C-U4 SST39VF010-90-4C-WH SST39VF010-90-4C-B3K SST39VF010-70-4I-NH SST39VF010-70-4I-WH SST39VF010-70-4I-B3K SST39VF010-90-4I-NH SST39VF010-90-4I-WH SST39VF010-90-4I-B3K Valid combinations for SST39LF020 SST39LF020-45-4C-NH SST39LF020-45-4C-WH SST39LF020-55-4C-NH SST39LF020-55-4C-WH Valid combinations for SST39VF020 SST39VF020-70-4C-NH SST39VF020-70-4C-WH SST39VF020-90-4C-NH SST39VF020-90-4C-U4 SST39VF020-90-4C-WH SST39VF020-70-4I-NH SST39VF020-70-4I-WH SST39VF020-90-4I-NH SST39VF020-90-4I-WH Valid combinations for SST39LF040 SST39LF040-45-4C-NH SST39LF040-45-4C-WH SST39LF040-55-4C-NH SST39LF040-55-4C-WH Valid combinations for SST39VF040 SST39VF040-70-4C-NH SST39VF040-70-4C-WH SST39VF040-90-4C-NH SST39VF040-90-4C-U1 SST39VF040-90-4C-WH SST39VF040-70-4I-NH SST39VF040-70-4I-WH SST39VF040-90-4I-NH SST39VF040-90-4I-WH Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 21 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet PACKAGING DIAGRAMS TOP VIEW Optional Pin #1 Identifier SIDE VIEW .485 .495 .447 .453 .042 .048 2 1 .106 .112 32 .020 R. MAX. .023 x 30˚ .029 .030 R. .040 .042 .048 .585 .595 BOTTOM VIEW .547 .553 .013 .021 .400 BSC .026 .032 .490 .530 .050 BSC. .015 Min. .075 .095 .050 BSC. .026 .032 .125 .140 Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (min/max). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches. 32.PLCC.NH-ILL.2 4. Coplanarity: 4 mils. 32-LEAD PLASTIC LEAD CHIP CARRIER (PLCC) SST PACKAGE CODE: NH 1.05 0.95 Pin # 1 Identifier .50 BSC .270 .170 8.10 7.90 0.15 0.05 12.50 12.30 0.70 0.50 14.20 13.80 32.TSOP-WH-ILL.4 Note: 1. Complies with JEDEC publication 95 MO-142 BA dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (min/max). 3. Coplanarity: 0.1 (±.05) mm. 4. Maximum allowable mold flash is 0.15mm at the package ends, and 0.25mm between leads. 32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 8MM SST PACKAGE CODE: WH X ©2001 Silicon Storage Technology, Inc. 14MM S71150-03-000 6/01 22 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet BOTTOM VIEW 8.00 ± 0.20 5.60 TOP VIEW 0.80 6 6 5 5 4.00 4 4 6.00 ± 0.20 3 3 2 2 1 1 0.80 H G F E D C B A A B C D E F G H 0.45 ± 0.05 (48X) A1 CORNER A1 CORNER SIDE VIEW 1.10 ± 0.10 0.15 SEATING PLANE 48ba-TFBGA-B3K-6x8-450mic-ILL.0 0.35 ± 0.05 1mm Note: 1. Although many dimensions are similar to those of JEDEC Publication 95, MO-210, this specific package is not registered. 2. All linear dimensions are in millimeters (min/max). 3. Coplanarity: 0.1 (±.05) mm. 4. The actual shape of the corners may be slightly different than as portrayed in the drawing. 48-BALL THIN-PROFILE, FINE-PITCH BALL GRID ARRAY (TFBGA) 6MM SST PACKAGE CODE: B3K ©2001 Silicon Storage Technology, Inc. X 8MM S71150-03-000 6/01 23 395 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 www.SuperFlash.com or www.ssti.com ©2001 Silicon Storage Technology, Inc. S71150-03-000 6/01 24 395