ST 2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor ST 2SC1815 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 150 mA Base Current -IB 50 mA Power Dissipation Ptot 400 mW Junction Temperature Tj 125 O Storage Temperature Range TS -65 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SA1015 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group O hFE 70 - 140 - Y hFE 120 - 240 - G hFE 200 - 400 - L hFE 350 - 700 - hFE 25 - - - -V(BR)CBO 50 - - V -V(BR)CEO 50 - - V -V(BR)EBO 5 - - V -ICBO - - 0.1 μA -IEBO - - 0.1 μA -VCE(sat) - 0.1 0.3 V -VBE(sat) - - 1.1 V fT 80 - - MHz COB - 4 7 pF NF - 0.5 6 dB DC Current Gain at -VCE=6V, -IC=2mA at -VCE=6V, -IC=150mA Collector Base Breakdown Voltage at -IC=100μA Collector Emitter Breakdown Voltage at -IC=10mA Emitter Base Breakdown Voltage at -IE=10μA Collector Cutoff Current at -VCB=50V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage at -IC=100mA, -IB=10mA Base Saturation Voltage at -IC=100mA, -IB=10mA Gain Bandwidth Product at -VCE=10V, -IC=1mA Output Capacitance at -VCB=10V, f=1MHz Noise Figure at -VCE=6V, -IC=0.1mA at f=100Hz, RS=10KΩ SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002