ST 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25OC) Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 20 V Emitter to Base Voltage VEBO 7 V Peak Collector Current ICP 8 A Collector Current IC 5 A Collector Power Dissipation Pc 1 W Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SD966 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit P hFE 120 - 250 - Q hFE 230 - 380 - R hFE 340 - 600 - hFE 150 - - - ICBO - - 0.1 μA IEBO - - 0.1 μA Cob - - 50 pF VCEO 20 - - V VEBO 7 - - V VCE(sat) - - 1 V fT - 150 - MHz DC Current Gain at VCE=2V, IC=0.5A at VCE=2V, IC=2A Collector Cutoff Current at VCB=10V Emitter Cutoff Current at VEB=7V Collector Output Capacitance at VCB=20V,f=1.0MHz Collector to Emitter Voltage at IC=1mA Emitter to Base Voltage at IE=10μA Collector to Emitter Saturation Voltage at IC=3A,IB=0.1A Transition Frequency at VCB=6V, IE=-50mA,f=200MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SD966 Pc-Ta I C-VCE 2.4 1.0 Ta=25o C I B =7mA 0.6 0.4 0.2 1.6 Ta=75o C 5mA 4mA 1.2 3mA 0.8 2mA 0.4 1mA 0 0.4 0.8 1.2 1.6 2.0 2.4 Ta=75o C 25o C -25o C 0.1 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 2 1 1 3 10 Collector current Ic (A) 0.4 0.8 1.2 1.6 f T-I E 400 VCE=2V VCB=6V Ta=25 oC 350 500 400 Ta=75o C 25o C 300 o -25 C 200 100 0 0.01 0.03 0.1 0.3 1 3 Collector current Ic (A) 10 300 250 200 150 100 50 0 -0.01 -0.03 -0.1 -0.3 Collector output capacitance Cob (pF) I E =0 f=1MHz o Ta=25 C 80 60 40 20 0 1 3 10 30 -1 -3 Emitter current I E (A) Cob-VCB 100 2.0 Base to emitter voltage V BE (V) Transition frequency f T (MHz) Forward current transfer ratio h FE 3 0.3 3 h FE -I C 600 I C/I B =30 1 4 0 Collector to emitter voltage VCE (V) VCE(sat)-I C 10 -25o C 0 0 Ambient temperature Ta (o C) 25o C VCE=2V 5 Collector Current Ic (A) 0.8 0 20 40 60 80 100 120 140 160 (v) 6 6mA 0 Collector to emitter saturation voltage VCE(sat) I C-VBE 2.0 Collector Current Ic (A) Collector power dissipation Pc (W) 1.2 100 Collector to base voltge VCB (V) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 -10