Bulletin I25188 rev. A 04/00 ST733C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AC (B-PUK) All diffused design 940A Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating case style TO-200AC (B-PUK) All types of force-commutated converters Major Ratings and Characteristics Parameters ST733C..L Units 940 A 55 °C 1900 A 25 °C @ 50Hz 20000 A @ 60Hz 20950 A @ 50Hz 2000 KA2s @ 60Hz 1820 KA2s IT(AV) @ Ths IT(RMS) @ Ths ITSM 2 I t V DRM/V RRM tq range TJ www.irf.com 400 to 800 V 10 to 20 µs - 40 to 125 °C 1 ST733C..L Series Bulletin I25188 rev. A 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VDRM /VRRM , maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 04 400 500 08 800 900 Type number ST733C..L 75 Current Carrying Capability ITM Frequency ITM ITM 180oel 180 el o Units 100µs 50Hz 400Hz 2200 2050 1900 1660 3580 3600 3100 3130 6800 3750 5920 3240 1000Hz 1370 1070 2900 2450 2120 1780 2500Hz 500 370 1220 980 960 770 50 50 50 50 Recovery voltage Vr Voltage before turn-on Vd 50 VDRM VDRM 50 V DRM A V Rise of on-state current di/dt 50 50 - - - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF On-state Conduction Parameter IT(AV) Max. average on-state current @ Heatsink temperature ST733C..L Units 940 (350) A 55 (85) °C Conditions 180° conduction, half sine wave double side (single side) cooled IT(RMS) Max. RMS on-state current 1900 DC @ 25°C heatsink temperature double side cooled ITSM 20000 t = 10ms Max. peak, one half cycle, non-repetitive surge current 20950 A 16800 I 2t Maximum I2t for fusing 2 reapplied 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, 2000 t = 10ms No voltage Initial TJ = TJ max 1820 t = 8.3ms reapplied KA2s 1290 Maximum I2√t for fusing t = 8.3ms t = 10ms 17600 1410 I 2 √t No voltage 20000 KA2 √s t = 10ms 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied www.irf.com ST733C..L Series Bulletin I25188 rev. A 04/00 On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 ST733C..L Units 1.63 1.09 V 0.32 mΩ IH 600 IL Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 1.20 High level value of forward slope resistance Maximum holding current rt 2 ITM= 1700A, T J = TJ max, tp = 10ms sine wave pulse Low level value of forward slope resistance Conditions (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 0.29 mA T J = 25°C, I T > 30A T J = 25°C, VA = 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t t d q ST733C..L Units 1000 Typical delay time Max. turn-off time A/µs Max 20 TJ = TJ max, VDRM = rated VDRM, ITM = 2 x di/dt Gate pulse: 20V 20Ω, 10µs 0.5µs rise time TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs 1.5 Min 10 Conditions µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 550A, commutating di/dt = -40A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Blocking Parameter ST733C..L Units Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 75 mA T J = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power ST733C..L Units PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W T J = TJ max., f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V T J = TJ max, tp ≤ 5ms 200 mA 3 V T J = 25°C, V A = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V www.irf.com Conditions 60 T J = TJ max, rated VDRM applied 3 ST733C..L Series Bulletin I25188 rev. A 04/00 Thermal and Mechanical Specification Parameter ST733C..L TJ Max. operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJ-hs Max. thermal resistance, Units °C 0.073 junction to heatsink DC operation single side cooled K/W 0.031 RthC-hs Max. thermal resistance, 0.011 K/W case to heatsink 0.005 F Mounting force, ± 10% 14700 N (1500) (Kg) wt Approximate weight 255 g Case style Conditions DC operation double side cooled DC operation single side cooled DC operation double side cooled TO - 200AC (B-PUK) See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions K/W TJ = TJ max. Single Side Double Side Single Side Double Side 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.011 0.011 90° 0.014 0.014 0.015 0.015 60° 0.020 0.021 0.021 0.022 30° 0.036 0.036 0.036 0.036 Ordering Information Table Device Code ST 73 3 C 08 L H K 1 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - Reapplied dv/dt code (for tq test condition) dv/dt - tq combinations available dv/dt (V/µs) 20 10 CN 12 CM t q(µs) 15 CL 18 CP 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 20 CK 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 50 DN DM DL DP DK 100 EN EM EL EP EK 200 -FM * FL * FP FK 400 --HL HP H * Standard part number. All other types available only on request. 10 - Critical dv/dt: None = 500V/µsec (Standard value) L 4 = 1000V/µsec (Special selection) www.irf.com ST733C..L Series Bulletin I25188 rev. A 04/00 Outline Table 34 (1.34) DIA. MAX. 0.7 (0.03) MIN. 27 (1 . 06 ) M AX . TWO PLACES PIN RECEPTACLE AMP. 60598-1 53 (2.09) DIA. MAX. 0.7 (0.03) MIN. 6.2 (0.24) MIN. 20°± 5° 58 .5 (2.3 ) D I A. M A X . 4.7 (0.18) Case Style TO-200AC (B-PUK) 36.5 (1.44) All dimensions in millimeters (inches) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 13 0 ST 7 3 3 C ..L Se rie s (Sin g le Sid e C o o le d ) R thJ- hs (D C ) = 0 .0 7 3 K / W 12 0 11 0 10 0 90 Co nd uctio n A ng le 80 30 ° 70 60° 90° 60 120° 50 180 ° 40 0 10 0 2 00 300 4 00 50 0 6 00 7 00 A v e ra g e O n -st a t e C u rre n t (A ) Fig. 1 - Current Ratings Characteristics www.irf.com M a xim u m A llo w a b le H e a tsin k T e m p e ra tu r e ( °C ) M a xim u m A llo w a b le H e a tsin k T e m p e ra t ur e (°C ) CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN. 13 0 S T7 3 3 C ..L S e rie s (S in g le Sid e C o o le d ) R th J-hs (D C ) = 0 .0 7 3 K /W 12 0 11 0 10 0 90 C o ndu ctio n Pe rio d 80 70 60 30° 50 60 ° 90° 40 120° 30 180 ° DC 20 0 2 00 40 0 60 0 800 1 0 00 A v e ra g e O n - sta t e C u rre n t (A ) Fig. 2 - Current Ratings Characteristics 5 ST733C..L Series 130 ST 7 3 3 C ..L Se rie s (D o ub le Sid e C o o le d ) R thJ-h s (D C ) = 0 .0 3 1 K / W 120 110 100 90 80 C o nduc tio n An g le 70 60 50 3 0° 60° 90° 40 30 120 ° 180 ° 20 0 2 00 4 00 60 0 8 00 1 0 00 12 0 0 1 40 0 M a xim u m A llo w a ble H e a t sin k T e m p e ra t u re (°C ) M a xim u m A llo w a ble H e at sin k T e m p e ra t u re (°C ) Bulletin I25188 rev. A 04/00 13 0 ST 7 3 3 C ..L S e rie s (D o u b le S id e C o o le d ) R thJ-hs (D C ) = 0 .0 3 1 K / W 12 0 11 0 10 0 90 C on duc tio n Pe rio d 80 70 3 0° 60 60° 50 90 ° 40 1 20° 1 80° 30 DC 20 0 50 0 1000 C o ndu ctio n A ng le ST733C..L Series TJ = 125°C 0 0 1 80 00 200 400 600 800 1000 1200 1400 180 ° 120 ° 90 ° 60 ° 30 ° 2 0 00 R M S Lim it 1 5 00 1 0 00 C o nd uc tio n Ang le 50 0 ST 7 3 3 C ..L Se rie s T J = 1 2 5 °C 0 0 20 0 4 00 6 00 8 0 0 1 0 00 1 20 0 1 4 00 A v e ra g e O n - sta t e C u rre n t (A ) Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics In it ia l T J = 1 2 5 °C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 1 60 00 1 40 00 1 20 00 1 00 00 ST 7 3 3 C ..L S e r ie s 8 00 0 10 1 00 Nu m be r O f Eq ual A m plitu de Ha lf Cy c le C urre nt Pulse s (N ) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 6 2 5 00 Average O n-state Curren t (A) A t A ny R at e d L o a d C o n dit io n A nd W ith Ra te d V RRM A p plie d Fo llo w ing S urg e . 1 M a x im u m A v e ra g e O n -st a t e P o w e r Lo ss (W ) 1500 P e a k H a lf Sin e W a v e O n -st a t e C u rre n t ( A ) Maxim um Average O n-state Power Loss (W ) P e a k H a lf S ine W av e O n -st a t e C u rre n t (A ) RMS Lim it 500 2 0 00 Fig. 4 - Current Ratings Characteristics 2500 2000 15 00 A v e ra ge O n - sta t e C u rre n t (A ) A v e ra g e O n - sta t e C u rre n t (A ) Fig. 3 - Current Ratings Characteristics 180° 120° 90° 60° 30° 10 0 0 20 0 0 0 M a xim u m N o n R e pe titive Su r ge C u rre n t V e rsu s P ulse T rain D ur atio n . C o n tro l O f C o nd uc tio n M a y N o t Be M a int aine d. In itial T J = 1 25 °C N o V o lt ag e R e a pplie d R a te d V R RM R e a pplie d 18 0 0 0 16 0 0 0 14 0 0 0 12 0 0 0 10 0 0 0 ST 7 3 3 C ..L S e r ie s 8 00 0 0 .0 1 0. 1 1 P u lse T r a in D u ra t io n (s) Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled www.irf.com ST733C..L Series Bulletin I25188 rev. A 04/00 M a xim u m R e v e rse R e c o v e ry C h a rg e - Q rr (µ C ) ( K/ W ) 0 .1 ST 7 3 3 C ..L S e r ie s th J-hs T J = 25°C TJ = 125°C ST733C..L Series 100 0.5 1 1. 5 2 2.5 3 3.5 4 4.5 0 .0 1 St e a d y S ta t e V a lu e R t hJ- hs = 0 .0 7 3 K / W (S in g le S id e C o o le d ) R t hJ- hs = 0 .0 3 1 K / W (D o u b le S id e C o o le d ) (D C O p e ra t io n ) 0 .0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 10 0 In stan taneous On -state Voltage (V ) S q u a re W a v e P u lse D ur at io n ( s) Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance Z thJCCharacteristic 45 0 I TM = 15 00 A ST 7 3 3 C ..L Se rie s TJ = 12 5 ° C 40 0 35 0 30 0 1 00 0 A 25 0 5 00 A 20 0 15 0 10 0 50 0 10 20 30 40 50 60 70 80 90 1 0 0 2 50 I TM = 1 50 0 A 2 00 10 0 0 A 1 50 5 00 A 1 00 S T 7 3 3 C ..L Se rie s T J = 1 2 5 °C 50 0 10 20 30 40 50 60 70 80 9 0 10 0 R a t e O f Fa ll O f O n -st a t e C u rre n t - d i/ d t (A / µ s) R a te O f Fa ll O f F o rw a rd C u r re n t - d i/ d t (A /µ s) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics 1 E5 P e a k O n -sta t e C u rre n t (A ) T ra ns ie n t Th e rm a l Im p e d a n c e Z 1000 M a x im u m R e v e rse R e c o v e ry C u rre n t - Irr (A ) In stan taneous O n-state Current (A) 10000 Snub ber c ircu it R s = 10 ohm s C s = 0 .47 µ F V D = 8 0% V D R M Snu bbe r circ uit R s = 1 0 o hm s C s = 0.4 7 µF V D = 80% V D R M 1 E4 4 00 20 0 10 0 50 Hz 4 00 1 00 0 15 0 0 5 0 00 tp 1 E2 5 0 Hz 2 5 00 3 0 00 1 E2 1 E1 1 00 1 5 00 25 0 0 1 E3 20 0 1 00 0 1 E3 ST73 3C ..L Se rie s Sin uso idal pulse T C = 40°C ST7 33 C.. L Serie s Sinuso idal pulse TC = 55 °C 3 0 00 5 00 0 1 E14E 41 E1E1 1 P u lse Ba se w id t h (µ s) tp 1 E2 1E3 1E4 Pu lse B a se w id th (µ s) Fig. 13 - Frequency Characteristics www.irf.com 7 ST733C..L Series Bulletin I25188 rev. A 04/00 1E 5 S T 733C..L S eries T rape zoidal puls e T C = 4 0°C di/ dt = 5 0A/ µs S nubbe r circuit R s = 10 o hms C s = 0 .4 7 µF V D = 8 0% V DR M S nubber circuit R s = 10 ohms C s = 0.47 µF V D = 80% V DR M S T 7 33C..L S eries T rapezoidal puls e T C = 55 °C di/ dt = 50 A/µs tp 1E 4 100 0 5 00 40 0 20 0 10 0 50 H z 1 500 2 000 25 00 30 00 1E 3 50 H z 150 0 200 0 250 0 30 00 50 00 1E 2 1E 1 10 0 40 0 20 0 5 00 1 000 1E 2 1E1E 4 41E1E1 1 1E 3 1E 2 1E 3 1E 4 P uls e B as ewidth (µs ) P uls e B as e width (µs ) Fig. 14 - Frequency Characteristics 1E 5 S T 733C..L S eries T rape zoidal puls e T C = 4 0°C di/ dt = 1 00A/µs S nubbe r circuit R s = 10 o hms C s = 0 .4 7 µF V D = 8 0% V D R M S nubber circuit R s = 10 ohms C s = 0.47 µF V D = 80% V DR M S T 7 33C..L S eries T rapezoidal puls e T C = 55 °C di/ dt = 10 0A/µs tp 1E 4 500 1E 3 2 500 400 2 00 1 00 50 H z 100 50 H z 40 0 20 0 5 00 1000 15 00 2 000 100 0 150 0 2000 25 00 3 000 3 000 500 0 1E 2 1E 1 1E 2 1E 3 1E1E 4 41E1E1 1 1E 2 1E 3 1E 4 P uls e B as ewidth (µs ) P uls e B as ewidth (µs ) Fig. 15 - Frequency Characteristics 1 E5 Pe a k O n -st at e C u rre n t (A ) ST7 33C ..L Serie s Sinusoidal pulse tp tp ST73 3C ..L Serie s Re ct ang ular pulse d i/dt = 50 A/µs 2 0 jo ule s pe r pulse 1 E4 2 3 5 10 20 jo ule s p er pu lse 5 3 1 1 E3 10 2 0.5 1 0 .4 1 E2 0. 5 0 .3 0. 4 0.3 1 E1 1 E1 1 E2 1E 3 P u lse B ase w id th (µs) 1 E14E 41 E11E 1 1E 2 1E 3 1 E4 P u lse B ase w id th (µs) Fig. 16 - Maximum On-state Energy Power Loss Characteristics 8 www.irf.com ST733C..L Series Bulletin I25188 rev. A 04/00 100 R ectangular gate puls e a) R ecommende d load line for rated di/dt : 20 V, 10 ohms ; tr<=1 µs b) R e commended load line for <=3 0% rated di/dt : 10V, 10ohms tr<=1 µs 10 (1) P GM = 10W , tp = 20ms (2) P GM = 20W , tp = 10ms (3) P GM = 40W , tp = 5ms (4) P GM = 60W , tp = 3.3ms (a) (b) 1 (1) (2) (3) (4) V GD IGD D ev ice: S T 7 33C..L S eries 0.1 0.00 1 0.01 0.1 1 F re quency L imited by P G(AV ) 10 100 Ins tantaneous Gate Current (A) Fig. 17 - Gate Characteristics www.irf.com 9