STMICROELECTRONICS STB16NB25

STB16NB25

N - CHANNEL 250V - 0.220Ω - 16A - TO-263
PowerMESH MOSFET
TYPE
ST B16NB25
■
■
■
■
■
■
■
V DSS
R DS(on)
ID
250 V
< 0.28 Ω
16 A
TYPICAL RDS(on) = 0.220 Ω
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
EXTREMELY HIGH dv/dt CAPABILITY
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symb ol
V DS
V DGR
V GS
Parameter
Value
Unit
Drain-source Voltage (V GS = 0)
250
V
Drain- gate Voltage (R GS = 20 kΩ)
250
V
± 30
V
G ate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
16
A
ID
Drain Current (continuous) at T c = 100 o C
10
A
Drain Current (pulsed)
64
A
I DM (•)
P tot
dv/dt( 1 )
T s tg
Tj
o
T otal Dissipation at Tc = 25 C
140
W
Derating Factor
1.12
W /o C
5.5
V/ns
Peak Diode Recovery voltage slope
Storage T emperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1999
-65 to 150
o
C
150
o
C
( 1) ISD ≤ 16A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
STB16NB25
THERMAL DATA
R thj -case
Rthj -amb
R thc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
o
0.9
62.5
0.5
300
C/W
oC/W
o
C/W
o
C
Max Value
Unit
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
16
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, ID = IAR , V DD = 50 V)
250
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V GS = 0
I DSS
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
Min.
Typ.
Max.
250
Unit
V
T c = 125 oC
V GS = ± 30 V
1
10
µA
µA
± 100
nA
Max.
Unit
ON (∗)
Symbo l
Parameter
Test Con ditions
V GS(th)
Gate Threshold Voltage V DS = V GS
ID = 250 µA
R DS(on)
Static Drain-source On
Resistance
V GS = 10V
ID = 8 A
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
3
Typ.
4
5
V
0.22
0.28
Ω
16
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/8
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D =8 A
V GS = 0
Min.
Typ.
Max.
Unit
4
S
1000
250
40
pF
pF
pF
STB16NB25
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t d(on)
tr
Turn-on Delay T ime
Rise Time
V DD = 125 V
ID = 8 A
R G = 4.7 Ω
V GS = 10 V
(Resistive Load, see fig. 3)
12
12
Qg
Q gs
Q gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 200 V I D = 16 A V GS = 10 V
29
9
11
38
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
t d(of f)
tf
Turn-off Delay T ime
Fall T ime
V DD = 125 V
ID = 8 A
V GS = 10 V
R G = 4.7 Ω
(Resistive Load, see fig. 3)
35
8
ns
ns
tr (Voff)
tf
tc
Off-voltage Rise T ime
Fall T ime
Cross-over Time
V CLAMP = 200 V
I D = 16 A
V GS = 10 V
R G = 4.7 Ω
(Induct ive Load, see fig. 5)
10
9
20
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 16 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 16 A
di/dt = 100 A/µs
T j = 150 o C
V DD = 50 V
(see test circuit, fig. 5)
t rr
Q rr
I RRM
Min.
Typ.
V GS = 0
Max.
Unit
16
64
A
A
1.5
V
210
ns
1.5
µC
14
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STB16NB25
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STB16NB25
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STB16NB25
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STB16NB25
TO-263 (D2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.4
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
D
C2
A2
A
C
DETAIL”A”
DETAIL ”A”
A1
B2
E
B
G
L2
L
L3
P011P6/E
7/8
STB16NB25
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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8/8
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