STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS(on) ID ST W13NB60 ST H13NB60FI 600 V 600 V <0.54 Ω <0.54 Ω 13 A 8.6 A ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 2 2 1 1 TO-247 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS Parameter Value STW 13NB60 STH13NB60FP Un it Drain-source Voltage (V GS = 0) 600 V Drain- gate Voltage (R GS = 20 kΩ) G ate-source Voltage 600 V ± 30 o V ID Drain Current (continuous) at Tc = 25 C 13 8.6 A ID Drain Current (continuous) at Tc = 100 oC 8.2 5.4 A I DM (•) P tot dv/dt( 1 ) V ISO Ts tg Tj 52 52 A T otal Dissipation at Tc = 25 C Drain Current (pulsed) 190 80 W Derating Factor Peak Diode Recovery voltage slope 1.52 4 0.64 4 W/ C V/ns 2000 o Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area January 2000 o V -65 to 150 o C 150 o C ( 1) ISD ≤ 13 A, di/dt ≤ 200 Α/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/9 STW13NB60 STH13NB60FI THERMAL DATA R thj -case Thermal Resistance Junction-case R thj -amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-247 ISOW AT T218 0.66 1.56 Max 30 0.1 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbo l Max Valu e Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 13 A E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 50 V) 700 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA T yp. Max. 600 V GS = 0 V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) Min. Unit V o T c = 125 C V GS = ± 30 V 1 50 µA µA ± 100 nA ON (∗) Symbo l Parameter Test Con ditions ID = 250 µA V GS(th) Gate Threshold Voltage R DS(on) Static Drain-source O n V GS = 10V Resistance I D(o n) V DS = V GS Min. T yp. Max. Unit 3 4 5 V 0.48 0.54 Ω ID = 6.5 A On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V 13 A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/9 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz I D = 6.5 A V GS = 0 Min. T yp. 8 12 Max. Unit S 2600 325 30 pF pF pF STW13NB60 STH13NB60FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions t d(on) tr Turn-on delay Time Rise Time V DD = 300 V R G = 4.7 Ω ID = 2.5 A VGS = 10 V Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 480 V I D = 13 A VGS = 10 V Min. T yp. Max. 27 13 Unit ns ns 58 15.5 23 82 nC nC nC T yp. Max. Unit SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Con ditions Min. 15 15 25 V DD = 480V ID = 13 A R G = 4.7 Ω V GS = 10 V ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Con ditions Min. T yp. Source-drain Current Source-drain Current (pulsed) Forward On Voltage I SD =13 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 13 A di/dt = 100 A/µs T j = 150 o C V DD = 100 V VGS = 0 Max. Unit 13 52 A A 1.6 V 630 ns 6.8 µC 22 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-247 Safe Operating Area for ISOWATT218 3/9 STW13NB60 STH13NB60FI Thermal Impedance for TO-247 Thermal Impedance for ISOWATT218 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9 STW13NB60 STH13NB60FI Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STW13NB60 STH13NB60FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STW13NB60 STH13NB60FI TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P 7/9 STW13NB60 STH13NB60FI ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 5.35 TYP. 5.65 0.210 TYP. MAX. 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 P025C 8/9 STW13NB60 STH13NB60FI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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