STMICROELECTRONICS STB7NB60-1

STB7NB60

N - CHANNEL 600V - 1.0 OMH - 7.2A - I2PAK/D2PAK
PowerMESH MOSFET
TYPE
STB7NB60
■
■
■
■
■
V DSS
R DS(on)
ID
600 V
< 1.2 Ω
7.2 A
TYPICAL RDS(on) = 1.0 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
1
3
12
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
I2PAK
TO-262
(suffix ”-1”)
D2PAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
SWITCH MODE POWER SUPPLIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Uni t
Drain-source Voltage (V GS = 0)
600
V
V DGR
Drain- gate Voltage (R GS = 20 kΩ)
600
V
V GS
Gate-source Voltage
± 30
V
7.2
A
4.5
A
28.8
A
V DS
Parameter
o
ID
Drain Current (continuous) at Tc = 25 C
ID
o
IDM (•)
P t ot
dv/dt( 1 )
T stg
Tj
Drain Current (continuous) at Tc = 100 C
Drain Current (pulsed)
o
Total Dissipation at Tc = 25 C
125
W
Derating F actor
1.0
W/ C
Peak Diode Recovery voltage slope
4.5
V/ ns
Storage T emperature
Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
June 1998
o
-65 to 150
o
C
150
o
C
(1) ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
STB7NB60
THERMAL DATA
R t hj-ca se
Rthj -amb
R thc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
o
1.0
62.5
0.5
300
C/W
oC/W
o
C/W
o
C
Max Valu e
Unit
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
7.2
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, I D = IAR , VDD = 50 V)
580
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Cond ition s
I D = 250 µA
Zero G ate Voltage
V DS = Max Rating
Drain Current (VGS = 0) V DS = Max Rating
I GSS
Gate-body Leakage
Current (V DS = 0)
Typ .
Max.
600
V GS = 0
I DSS
Min.
Un it
V
T c = 125 oC
V GS = ± 30 V
1
50
µA
µA
± 100
nA
ON (∗)
Symb ol
Parameter
Test Cond ition s
ID = 250 µA
V GS(th)
Gate Threshold
Voltage
R DS( on)
Static Drain-source On V GS = 10V
Resistance
ID(o n)
V DS = VGS
Min.
Typ .
Max.
Un it
3
4
5
V
1.0
1.2
Ω
ID = 3.6 A
7.2
On State Drain Current V DS > I D(on) x R DS(on) max
V GS = 10 V
A
DYNAMIC
Symb ol
g fs (∗)
C iss
C oss
C rss
2/8
Parameter
Test Cond ition s
Forward
Transconductance
V DS > I D(on) x R DS(on) max
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 3.6 A
VGS = 0
Min.
Typ .
4
5.3
1250
165
16
Max.
Un it
S
1625
223
22
pF
pF
pF
STB7NB60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
t d(on)
tr
Turn-on Time
Rise Time
V DD = 300 V I D = 3.6 A
VGS = 10 V
R G = 4.7 Ω
(see test circuit, figure 3)
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 480 V
Min.
I D = 7.2 A VGS = 10 V
Typ .
Max.
Un it
18
8
27
12
ns
ns
30
9.9
13.3
45
nC
nC
nC
Typ .
Max.
Un it
8
5
15
12
8
23
ns
ns
ns
Typ .
Max.
Un it
7.2
28.8
A
A
1.6
V
SWITCHING OFF
Symb ol
t r(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Cond ition s
Min.
V DD = 480 V I D = 7.2 A
R G = 4.7 Ω V GS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
I SD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 7.2 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 7.2 A di/dt = 100 A/µs
o
T j = 150 C
V DD = 100 V
(see test circuit, figure 5)
t rr
Q rr
I RRM
Min.
V GS = 0
530
ns
4.5
µC
17
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STB7NB60
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STB7NB60
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STB7NB60
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STB7NB60
TO-262 (I2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.3
4.6
0.169
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B1
1.2
1.38
0.047
0.054
B2
1.25
1.4
0.049
0.055
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
e
2.44
2.64
0.096
0.104
E
10
10.28
0.393
0.404
L
13.2
13.5
0.519
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
E
e
B
B2
C2
A1
A
C
A
L1
L2
D
L
P011P5/C
7/8
STB7NB60
TO-263 (D2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.3
4.6
0.169
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.25
1.4
0.049
0.055
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.28
0.393
0.404
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
E
A
C2
L2
D
L
L3
B2
B
A1
C
G
P011P6/C
8/8
STB7NB60
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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