STMICROELECTRONICS STC20DE90HV

STC20DE90HV
Hybrid emitter switched bipolar transistor
ESBT® 900 V - 20 A - 0.06 W
Preliminary Data
General features
Table 1.
General features
VCS(ON)
IC
RCS(ON)
1.2 V
20 A
0.06 Ω
■
Low equivalent on resistance
■
Very fast-switch, up to 150 kHz
■
Squared RBSOA, up to 900 V
■
Very low CISS driven by RG = 47 Ω
■
In compliance with the 2002/93/EC European
Directive
1
23
4
TO247-4L HV
Description
Internal schematic diagrams
The STC20DE90HV is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.
The STC20DE90HV is designed for use in power
supply forward converter and three-phase power
factor corrector applications.
Applications
■
SMPS forward converter
■
Three-phase power factor corrector
Order codes
Part Number
Marking
Package
Packing
STC20DE90HV
C20DE90HV
TO247-4L HV
Tube
October 2006
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
www.st.com
11
STC20DE90HV
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STC20DE90HV
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCS(SS)
Collector-source voltage (V BS =VGS =0V)
900
V
VBS(OS)
Base-source voltage (IC =0, VGS =0V)
30
V
VSB(OS)
Source-base voltage (IC =0, VGS =0V)
9
V
± 20
V
Collector current
20
A
Collector peak current (tP < 5ms)
60
A
Base current
5
A
IBM
Base peak current (tP < 1ms)
20
A
Ptot
Total dissipation at T c ≤ 25°C
139
W
Tstg
Storage temperature
-40 to 150
°C
150
°C
Value
Unit
0.9
°C/W
VGS
IC
ICM
IB
TJ
Table 3.
Symbol
Rthj-case
Gate-source voltage
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-case
max
3/11
Electrical characteristics
2
STC20DE90HV
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICS(SS)
Collector-source current
VCS(SS) =900V
(VBS =V GS =0V)
100
µA
IBS(OS)
Base-source current
(IC =0, VGS =0V)
VBS(OS) =30V
10
µA
ISB(OS)
Source-base current
(IC =0, VGS =0V)
VSB(OS) =9V
100
µA
IGS(OS)
Gate-source leakage
(VBS =0V)
VGS = ± 20V
500
nA
VCS(ON)
Collector-source ON
voltage
VGS =10V
IC =20A
IB =4A
VGS =10V
IC =10A
IB =1A
V GS =10V IC =20A
4
VCS =1V
V GS =10V IC =10A
12
DC current gain
VBS(ON)
Base-source ON
voltage
VGS =10V IC =20A
IB =4A
VGS =10V IC =10A
IB =1A
VGS(th)
Gate threshold voltage
VBS =V GS
IB =250µA
VCS =25V
f =1MHz
QGS(tot)
ts
tf
ts
tf
VCS(dyn)
Input capacitance
Gate-source Charge
INDUCTIVE LOAD
Storage time
Fall time
INDUCTIVE LOAD
Storage time
Fall time
Collector-source
dynamic voltage
(500ns)
1.2
0.65
VCS =1V
hFE
Ciss
4/11
Electrical characteristics
VGS=VCB=0V
VCS=25V
VGS=10V
VCB=0V
IC =20A
VGS =10V
RG =47Ω
VClamp =720V
tp =4µs
IC =10A
IB =2A
VGS =10V
RG =47Ω
VClamp =720V
tp =4µs
IC =10A
IB =1A
V
V
1.8
1.2
1.5
2.2
V
V
3
V
750
pF
12.5
nC
775
ns
7
ns
510
ns
5
ns
2.3
V
VCC =VClamp =400V
VGS =10V
IC =10A
IB = 2A
R G =47Ω
tpeak =500ns
IBpeak =10A
STC20DE90HV
Electrical characteristics
Table 4.
Symbol
VCS(dyn)
VCSW
Electrical characteristics
Parameter
Collector-source
dynamic voltage
(1µs)
Test Conditions
Min.
Typ.
Max.
Unit
VCC =VClamp =400V
VGS =10V
IC =10A
IB = 2A
RG =47Ω
tpeak =500ns
IBpeak =10A
Maximum collectorsource voltage switched RG =47Ω
without snubber
hFE =5
IC =20A
1
900
V
V
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
2.1
Electrical characteristics (curves)
Figure 1.
Output characteristics
Figure 2.
Dynamic collector-source
saturation voltage
Figure 3.
DC current gain
Figure 4.
Gate threshold voltage vs
temperature
5/11
Electrical characteristics
6/11
STC20DE90HV
Figure 5.
Collector-source On voltage
Figure 6.
Collector-source On voltage
Figure 7.
Base-source On voltage
Figure 8.
Base-source On voltage
Figure 9.
Inductive load switching time Figure 10. Inductive load switching time
STC20DE90HV
Electrical characteristics
Figure 11. Reverse biased safe
operating area
7/11
Package mechanical data
3
STC20DE90HV
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/11
STC20DE90HV
Package mechanical data
TO247-4L HV MECHANICAL DATA
DIM.
A
A1
A2
MIN.
4.85
2.20
b
0.95
b2
c
D
D1
E
e
e1
L
L1
L2
L3
øP
S
2.50
0.40
23.85
15.45
2.54
5.08
10.20
2.20
mm.
TYP
2.50
1.27
1.10
24
21.50
15.60
2.50
18.50
3
3.55
MAX.
5.15
2.60
1.30
2.90
0.80
24.15
15.75
10.80
2.80
3.65
5.50
7734874
9/11
Revision history
4
STC20DE90HV
Revision history
26
Table 5.
10/11
Revision history
Date
Revision
10-Oct-2006
1
Changes
First release.
STC20DE90HV
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