STD2NB80 N - CHANNEL 800V - 4.6 Ω - 1.9A - IPAK/DPAK PowerMESH MOSFET TYPE ST D2NB80 ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 800 V < 6.5 Ω 1.9 A TYPICAL RDS(on) = 4.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL (2500 UNITS) DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 3 3 2 1 1 IPAK TO-251 (Suffix ”-1”) DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ■ ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS Value Un it Drain-source Voltage (V GS = 0) Parameter 800 V Drain- gate Voltage (R GS = 20 kΩ) 800 V ± 30 V G ate-source Voltage o ID Drain Current (continuous) at Tc = 25 C 1.9 A ID Drain Current (continuous) at Tc = 100 oC 1.2 A Drain Current (pulsed) 7.6 A I DM (•) P tot o T otal Dissipation at Tc = 25 C Derating Factor dv/dt( 1 ) Ts tg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area January 1999 55 W 0.44 W /o C 4.5 V/ns -65 to 150 o C 150 o C ( 1) ISD ≤ 2A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/9 STD2NB80 THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o 2.27 100 1 275 C/W oC/W o C/W o C Max Valu e Unit AVALANCHE CHARACTERISTICS Symbo l Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 1.9 A E AS Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = IAR , VDD = 50 V) 176 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) T yp. Max. 800 V GS = 0 I DSS Min. Unit V T c = 125 oC V GS = ± 30 V 1 50 µA µA ± 100 nA ON (∗) Symbo l Parameter Test Con ditions ID = 250 µA V GS(th) Gate Threshold Voltage R DS(on) Static Drain-source O n V GS = 10V Resistance I D(o n) V DS = V GS Min. T yp. Max. Unit 3 4 5 V 4.6 6.5 Ω ID =1.3 A 1.9 On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/9 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz I D = 1.3 A V GS = 0 Min. T yp. Max. Unit 1 2 S 440 60 7 pF pF pF STD2NB80 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. T yp. Max. Unit t d(on) tr Turn-on delay Time Rise Time V DD = 400 V ID = 1.5 A VGS = 10 V R G = 4.7 Ω (see test circuit, figure 3) 12 10 Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 640 V 17 6.5 7.5 24 nC nC nC T yp. Max. Unit I D =3 A V GS = 10 V ns ns SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Con ditions Min. 15 17 22 V DD = 640 V ID = 3 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 5) ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Con ditions Min. T yp. Source-drain Current Source-drain Current (pulsed) Forward On Voltage I SD = 1.9 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 2.6 A di/dt = 100 A/µs T j = 150 o C V DD = 100 V (see test circuit, figure 5) VGS = 0 Max. Unit 1.9 7.6 A A 1.6 V 650 ns 2.8 µC 8.5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/9 STD2NB80 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STD2NB80 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STD2NB80 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STD2NB80 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 7/9 STD2NB80 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL ”A” L2 D = 1 = G 2 = = = = E B2 3 B DETAIL ”A” L4 0068772-B 8/9 STD2NB80 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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