STD6NC40 N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK PowerMesh™II MOSFET ■ ■ ■ ■ ■ ■ TYPE VDSS RDS(on) ID STD6NC40 400V <1Ω 5A TYPICAL RDS(on) = 0.75Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL ADD SUFFIX “-1” FOR ORDERING IN IPAK DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. 3 3 2 1 1 DPAK IPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITH MODE LOW POWER SUPPLIES (SMPS) ■ CFL ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 400 V Drain-gate Voltage (RGS = 20 kΩ) 400 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 5 A ID Drain Current (continuos) at TC = 100°C 3 A Drain Current (pulsed) 20 A Total Dissipation at TC = 25°C 55 W 0.44 W/°C 3 V/ns –65 to 150 °C 150 °C IDM (■) PTOT Derating Factor dv/dt(1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area March 2001 (1)ISD ≤5A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX. 1/9 STD6NC40 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.27 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Rthc-sink Thermal Resistance Case-sink Typ 1.5 °C/W Maximum Lead Temperature For Soldering Purpose 275 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 6 A 320 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 400 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 3 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. Typ. Max. Unit 2 3 4 V 0.75 1 Ω 6 A DYNAMIC Symbol gfs (1) 2/9 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID =3A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 5.1 S 530 pF Ciss Input Capacitance Coss Output Capacitance 90 pF Crss Reverse Transfer Capacitance 15 pF STD6NC40 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 200V, ID = 3A, RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 320V, ID = 6A, VGS = 10V Typ. Max. Unit 11 ns 15 ns 18 4 8.5 23 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. VDD = 320V, ID = 6A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 8 12 23 ns ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 6 A ISDM (1) Source-drain Current (pulsed) 24 A VSD (2) Forward On Voltage ISD = 6A, VGS = 0 1.6 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 6A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM 280 1.4 10 ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/9 STD6NC40 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STD6NC40 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STD6NC40 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STD6NC40 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 7/9 STD6NC40 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 8/9 STD6NC40 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9