STGD6NC60HD N-channel 600V - 7A - DPAK Very fast PowerMESH™ IGBT General features ■ ■ Type VCES VCE(sat)Max @25°C IC @100°C STGD6NC60HD 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ High frequency operation DPAK Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop. Internal schematic diagram Applications ■ High frequency inverters ■ SMPS and PFC in both hard switch and resonant topologies ■ Motor drivers Order codes Part number Marking Package Packaging STGD6NC60HDT4 GD6NC60HD DPAK Tape & reel February 2007 Rev 3 1/15 www.st.com 15 Contents STGD6NC60HD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STGD6NC60HD 1 Electrical ratings Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 600 V IC(1) Collector current (continuous) at TC = 25°C 15 A IC(1) Collector current (continuous) at TC = 100°C 7 A Collector current (pulsed) 21 A Gate-emitter voltage ±20 V Diode RMS forward current at Tc=25°C 10 A PTOT Total dissipation at TC = 25°C 56 W Tstg Storage temperature – 55 to 150 °C 300 °C ICM(2) VGE IF Tj Operating junction temperature Tl Maximum lead temperature for soldering purpose (for 10sec. 1.6 mm from case) 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Pulse width limited by max junction temperature Table 2. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Value Unit 2 °C/W 62.5 °C/W 3/15 Electrical characteristics 2 STGD6NC60HD Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol Parameter VBR(CES) Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation VGE= 15V, IC= 3A voltage VGE= 15V, IC= 3A, Tc= 125°C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA ICES Collector cut-off current (VGE = 0) VCE= Max rating,TC= 25°C IGES Gate-emitter leakage current (VCE = 0) VGE= ±20V, VCE= 0 Forward transconductance VCE = 15V, IC= 3A gfs Table 4. Symbol Cies Coes Cres Qg Test conditions IC= 1mA, VGE= 0 Min. Typ. Max. 600 Unit V 1.9 1.7 3.75 VCE=Max rating,TC= 125°C 2.5 V V 5.75 V 10 1 µA mA ±100 nA 3 S Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 3A, Qgc Total gate charge Gate-emitter charge Gate-collector charge ICL Turn-off SOA minimum current Vclamp=390V, Tj=150°C, RG=10Ω, VGE=15V Qge 4/15 Static VGE = 15V, (see Figure 17) Min. Typ. Max. Unit 205 32 5.5 pF pF pF 13.6 3.4 5.1 nC nC nC 19 A STGD6NC60HD Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 6. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions Min. VCC = 390V, IC = 3A RG= 10Ω, VGE= 15V, Tj= 25°C (see Figure 18) VCC = 390V, IC = 3A RG= 10Ω, VGE= 15V, Tj=125°C (see Figure 18) VCC = 390V, IC = 3A, RGE = 10Ω, VGE = 15V,TJ=25°C (see Figure 18) VCC = 390V, IC = 3A, RGE=10Ω, VGE =15V, Tj=125°C (see Figure 18) Typ. Max. Unit 12 5 612 ns ns A/µs 13 4.3 560 ns ns A/µs 40 76 100 ns ns ns 60 98 124 ns ns ns Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 3A RG= 10Ω, VGE=15V, Tj=25°C (see Figure 18) VCC = 390V, IC = 3A RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 18) Min. Typ. Max. Unit 20 68 88 µJ µJ µJ 37 93 130 µJ µJ µJ 1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current 5/15 Electrical characteristics Table 7. Symbol Collector-emitter diode Parameter Test conditions If = 1.5A Vf Forward on-voltage trr Reverse recovery time Reverse recovery charge Reverse recovery current Tj = 25°C, di/dt = 100 A/µs (see Figure 19) Reverse recovery time Reverse recovery charge Reverse recovery current Tj =125°C, di/dt = 100A/µs (see Figure 19) Qrr Irrm trr Qrr Irrm 6/15 STGD6NC60HD If = 1.5A, Tj = 125°C If = 3A,VR = 40V, If = 3A,VR = 40V, Min. Typ. Max. Unit 1.6 1.3 2.1 V V 21 14 1.36 ns nC A 34 32 1.88 ns nC A STGD6NC60HD Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations 7/15 Electrical characteristics STGD6NC60HD Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 8/15 STGD6NC60HD Figure 13. Thermal Impedance Electrical characteristics Figure 14. Turn-off SOA Figure 15. Emitter-collector diode characteristics 9/15 Test circuit 3 STGD6NC60HD Test circuit Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit Figure 18. Switching waveform Figure 19. Diode recovery time waveform 10/15 STGD6NC60HD 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/15 Package mechanical data STGD6NC60HD TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 0.260 E 6.40 6.60 0.252 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 1.00 0.024 L2 L4 V2 0.8 0.60 0 o 0.031 8 o 0 o 0.039 0o P032P_B 12/15 STGD6NC60HD 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 13/15 Revision history 6 STGD6NC60HD Revision history Table 8. 14/15 Revision history Date Revision Changes 04-Aug-2005 1 First release 07-Mar-2006 2 Complete version 07-Feb-2007 3 The document has been reformatted STGD6NC60HD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15