STGP7NB60M - STGD7NB60M N-CHANNEL 7A - 600V TO-220 / DPAK PowerMESH™ IGBT TYPE STGP7NB60M STGD7NB60M ■ ■ ■ ■ ■ ■ ■ VCES VCE(sat) (Max) @25°C IC @100°C 600 V 600 V < 1.9 V < 1.9 V 7A 7A 3 HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE 3 1 TO-220 2 1 DPAK INTERNAL SCHEMATIC DIAGRAM DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "M" identifies a family optimized to achieve very low switching switching times for high frequency applications (<20KHZ) APPLICATIONS MOTOR CONTROLS ■ SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES ■ ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGP7NB60M GP7NB60M TO-220 TUBE STGD7NB60MT4 GD7NB60M DPAK TAPE & REEL June 2003 1/11 STGP7NB60M - STGD7NB60M ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit TO-220 DPAK VCES Collector-Emitter Voltage (VGS = 0) 600 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC = 25°C 14 A IC Collector Current (continuous) at TC = 100°C 7 A ICM () PTOT Collector Current (pulsed) 56 Total Dissipation at TC = 25°C Derating Factor Tstg Tj A 80 70 W 0.64 0.56 W/°C Storage Temperature – 55 to 150 °C 150 °C Max. Operating Junction Temperature () Pulse width limited by safe operating area THERMAL DATA TO-220 DPAK Rthj-case Thermal Resistance Junction-case Max 1.56 1.78 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter VBR(CES) Collector-Emitter Breakdown Voltage ICES IGES Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 µA, VGE = 0 Min. Typ. Max. 600 Unit V VCE = Max Rating, TC = 25 °C 50 µA VCE = Max Rating, TC = 125 °C 100 µA VGE = ± 20V , VCE = 0 ±100 nA Max. Unit 5 V 1.9 V ON (1) Symbol Parameter VGE(th) Gate Threshold Voltage VCE(sat) Collector-Emitter Saturation Voltage 2/11 Test Conditions VCE = VGE, IC = 250 µA Min. Typ. 3 VGE = 15V, IC = 7 A 1.5 VGE = 15V, IC= 7 A, Tj =125°C 1.2 V STGP7NB60M - STGD7NB60M ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs (1) Parameter Test Conditions Min. Typ. Max. Unit Forward Transconductance VCE = 25 V, Ic = 7 A Cies Input Capacitance VCE = 25V, f = 1 MHz, VGE = 0 Coes Output Capacitance 85 pF Cres Reverse Transfer Capacitance 13 pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 7 A, VGE = 15V 37 4.2 13 ICL Latching Current Vclamp = 480 V, VGE = 15V Tj = 125°C , RG = 10 Ω 28 5 S 550 pF 50 nC nC nC A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Test Conditions Min. Typ. Max. Unit Turn-on Delay Time Rise Time VCC = 480 V, IC = 7 A RG = 10Ω , VGE = 15 V 13 6 ns ns Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 7 A RG=10Ω VGE = 15 V,Tj =125°C 1000 50 A/µs µJ SWITCHING OFF Symbol tc Parameter Cross-over Time tc Max. Unit ns ns Delay Time 155 ns Fall Time 240 ns Turn-off Switching Loss 455 µJ Total Switching Loss 500 µJ 610 ns 215 ns td(off) Ets Typ. 95 Off Voltage Rise Time Eoff(**) Vcc = 480 V, IC = 7 A, RG = 10 Ω , VGE = 15 V Min. 340 tr(Voff) tf Test Conditions Cross-over Time Vcc = 480 V, IC = 7 A, RG = 10 Ω , VGE = 15 V Tj = 125 °C tr(Voff) Off Voltage Rise Time td(off) Delay Time 280 ns Fall Time 390 ns Turn-off Switching Loss 870 µJ Total Switching Loss 920 µJ tf Eoff(**) Ets Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/11 STGP7NB60M - STGD7NB60M Output Characteristics Transconductance Transfer Characteristics Normalized Collector-Emitter On Voltage vs Temp. Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/11 STGP7NB60M - STGD7NB60M Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/11 STGP7NB60M - STGD7NB60M Thermal Impedance for TO-220 Turn-Off SOA 6/11 Thermal Impedance for DPAK STGP7NB60M - STGD7NB60M Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/11 STGP7NB60M - STGD7NB60M TO-220 MECHANICAL DATA DIM. 8/11 mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STGP7NB60M - STGD7NB60M TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 9/11 STGP7NB60M - STGD7NB60M DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 0.059 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R W 40 15.7 16.3 1.574 0.618 * on sales type 10/11 0.641 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STGP7NB60M - STGD7NB60M Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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