STP14NF12 STP14NF12FP N-CHANNEL 120V - 0.16Ω - 14A TO-220/TO-220FP LOW GATE CHARGE STripFET™ POWER MOSFET TYPE STP14NF12 STP14NF12FP ■ ■ ■ VDSS RDS(on) ID 120 V 120 V < 0.18 Ω < 0.18 Ω 14 A 14 A TYPICAL RDS(on) = 0.16Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION 3 3 1 2 1 TO-220 DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS ■ UPS AND MOTOR CONTROL ■ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP14NF12 VDS VDGR VGS 120 V Drain-gate Voltage (RGS = 20 kΩ) 120 V Gate- source Voltage ±20 V Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C 60 Derating Factor 0.4 PTOT STP14NF12FP Drain-source Voltage (VGS = 0) ID IDM () Unit 14 8.5 A 9 6 A 56 34 A 25 W 0.17 W/°C dv/dt (1) Peak Diode Recovery voltage slope 9 V/ns EAS (2) Single Pulse Avalanche Energy 60 mJ VISO Tj Tstg Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature (● ) Pulse width limited by safe operating area August 2002 - 2500 -55 to 175 V °C (1) ISD ≤14A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (2) Starting Tj = 25°C, ID = 14A, VDD = 50V 1/9 STP14NF12/STP14NF12FP THERMAL DATA TO-220 TO-220FP 2.5 6 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ±20V V(BR)DSS Min. Typ. Max. 120 Unit V VDS = Max Rating, TC = 125 °C 1 µA 10 µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 7 A Min. Typ. Max. Unit 2 3 4 V 0.16 0.18 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/9 Parameter Forward Transconductance Test Conditions VDS = 15V , ID = 7 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 4 S 460 pF Ciss Input Capacitance Coss Output Capacitance 70 pF Crss Reverse Transfer Capacitance 30 pF STP14NF12/STP14NF12FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 50 V, ID = 7 A RG = 4.7Ω VGS = 10V (Resistive Load, see Figure 3) VDD = 80 V, ID = 14 A, VGS = 10V Typ. Max. Unit 16 ns 25 ns 15.5 3.7 4.7 21 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. 32 8 VDD = 50 V, ID = 7 A, RG = 4.7Ω, VGS = 10V (Resistive Load, see Figure 3) ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 14 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 14 A, di/dt = 100A/µs, VDD = 50 V, Tj = 150°C (see test circuit, Figure 5) IRRM Typ. Source-drain Current ISDM (2) trr Qrr Min. Max. Unit 14 A 56 A 1.5 V 92 230 5 ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area For TO-220 Safe Operating Area For TO-220FP 3/9 STP14NF12/STP14NF12FP Thermal Impedance For TO-220 Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9 STP14NF12/STP14NF12FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature 5/9 STP14NF12/STP14NF12FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STP14NF12/STP14NF12FP TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.40 L3 28.90 L4 13 0.645 1.137 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 DIA 3.75 3.85 0.147 0.151 1 7/9 STP14NF12/STP14NF12FP TO-220FP MECHANICAL DATA mm. DIM. MIN. inch TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 8/9 L5 1 2 3 L4 STP14NF12/STP14NF12FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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