STMICROELECTRONICS STS4NF100

STS4NF100
N-CHANNEL 100V - 0.065 Ω - 4A SO-8
STripFET™ II POWER MOSFET
■
■
■
■
TYPE
VDSS
RDS(on)
ID
STS4NF100
100 V
<0.070 Ω
4A
TYPICAL RDS(on) = 0.065 Ω
EXCEPTIONAL dv/dt CAPABILITY
100 % AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
SO-8
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
IDM(•)
Ptot
Value
Unit
Drain-source Voltage (VGS = 0)
Parameter
100
V
Drain-gate Voltage (RGS = 20 kΩ)
100
V
Gate- source Voltage
± 20
V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
4
2.5
A
A
Drain Current (pulsed)
16
A
Total Dissipation at TC = 25°C
2.5
W
(•) Pulse width limited by safe operating area.
July 2001
.
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STS4NF100
THERMAL DATA
Rthj-amb
Tj
Tstg
(*)Thermal Resistance Junction-ambient
Thermal Operating Junction-ambient
Storage Temperature
Single Operatio
50
-55 to 150
-55 to 150
°C/W
°C
°C
(*) Mounted on FR-4 board (t [ 10 sec.)
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
V(BR)DSS
Min.
Typ.
Max.
100
Unit
V
1
10
µA
µA
±100
nA
ON (*)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 2 A
Min.
Typ.
Max.
Unit
2
3
4
V
0.065
0.070
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
2/8
Parameter
Test Conditions
Min.
gfs (*)
Forward Transconductance
VDS>ID(on)xRDS(on)max ID = 2 A
10
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
870
125
52
pF
pF
pF
STS4NF100
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
ID = 4 A
VDD = 50 V
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
58
45
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 80V ID= 4A VGS=10V
30
6
10
41
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
Min.
ID = 4 A
VDD = 50 V
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
49
17
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
Forward On Voltage
ISD = 4 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
di/dt = 100A/µs
ISD = 4 A
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
VGS = 0
100
375
7.5
Max.
Unit
4
16
A
A
1.2
V
ns
nC
A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/8
STS4NF100
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STS4NF100
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
.
.
5/8
STS4NF100
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STS4NF100
SO-8 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
MAX.
MIN.
TYP.
1.75
0.1
0.003
0.009
1.65
0.65
MAX.
0.068
0.25
a2
a3
inch
0.064
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
c1
45 (typ.)
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
S
0.6
0.023
8 (max.)
0016023
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STS4NF100
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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