STP3NC70Z STP3NC70ZFP N-CHANNEL 700V - 4.1Ω - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH™III MOSFET TYPE STP3NC70Z STP3NC70ZFP ■ ■ ■ ■ ■ VDSS RDS(on) ID 700V 700V < 4.7Ω < 4.7Ω 2.5 A 2.5 A TYPICAL RDS(on) = 4.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED 3 1 TO-220 2 TO-220FP DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS ■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION ■ WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP3NC70Z VDS VDGR VGS ID ID IDM (● ) PTOT IGS dv/dt (1) 700 V Drain-gate Voltage (RGS = 20 kΩ) 700 V Gate- source Voltage ± 25 V Drain Current (continuos) at TC = 25°C 2.5 2.5 (*) A Drain Current (continuos) at TC = 100°C 1.6 1.6 (*) A Drain Current (pulsed) 10 10 A Total Dissipation at TC = 25°C 65 35 W 0.52 0.28 W/°C Gate-source Current (DC) ±50 mA Gate source ESD(HBM-C=100pF, R=1.5KΩ) 1.5 KV 3 V/ns Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj STP3NC70ZFP Drain-source Voltage (VGS = 0) Derating Factor VESD(G-S) Unit Max. Operating Junction Temperature - 2500 V –65 to 150 °C 150 °C (•)Pulse width limited by safe operating area (1) ISD ≤2.5A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX June 2001 (*) Limited by Maximum Temperature allowed 1/10 STP3NC70Z/STP3NC70ZFP THERMAL DATA TO-220 TO-220FP 1.92 3.57 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl °C/W AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 2.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 150 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient IDSS IGSS Test Conditions ID = 250 µA, VGS = 0 Min. Typ. Max. 700 ID = 1 mA, VGS = 0 Unit V 0.8 V/°C Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA Gate-body Leakage Current (VDS = 0) VGS = ±20V ±10 µA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 1.25 A Min. Typ. Max. Unit 3 4 5 V 4.1 4.7 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/10 Parameter Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 1.25A VDS = 25V, f = 1 MHz, VGS = 0 Min. 2 S 530 pF 50 pF 7 pF STP3NC70Z/STP3NC70ZFP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. Typ. Max. Unit VDD = 350 V, ID = 1.25 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 14 ns 11 ns VDD = 560V, ID = 2.5A, VGS = 10V 17 24 nC 4 nC 7 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 560V, ID = 2.5 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 16 ns 33 ns 40 ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 2.5 A ISDM (2) Source-drain Current (pulsed) 10 A VSD (1) Forward On Voltage ISD = 2.5 A, VGS = 0 1.6 V ISD = 2.5 A, di/dt = 100A/µs, VDD = 27V, Tj = 150°C (see test circuit, Figure 5) ISD Parameter trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions Min. Typ. 175 ns 0.6 µC 7.5 A GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Test Conditions Min. Typ. 25 Max. Unit Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) V αT Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C Rz Dynamic Resistance ID = 50 mA, VGS = 0 90 Ω Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT (25°-T) BVGSO(25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STP3NC70Z/STP3NC70ZFP Safe Operating Area for TO-220 Safe Operating Area for TO-220FP Thermal Impedance for TO-220 Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics 4/10 STP3NC70Z/STP3NC70ZFP Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/10 STP3NC70Z/STP3NC70ZFP Source-drain Diode Forward Characteristics 6/10 STP3NC70Z/STP3NC70ZFP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/10 STP3NC70Z/STP3NC70ZFP TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/10 L4 P011C STP3NC70Z/STP3NC70ZFP TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/10 STP3NC70Z/STP3NC70ZFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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