STPS80170C ® HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) 2 x 40 A VRRM 170 V Tj 175 °C VF(max) 0.74 V A1 K A2 FEATURES AND BENEFITS ■ ■ ■ ■ ■ ■ High junction temperature capability Low leakage current Good trade off between leakage current and forward voltage drop Low thermal resistance High frequency operation Avalanche specification A2 K A1 TO-247 STPS80170CW Table 2: Order Code DESCRIPTION Dual center tab Schottky rectifier suited for High Frequency Switched Mode Power Supplies. Packaged in TO-247, this device is intended for use to enhance the reliability of the application. Part Number Marking STPS80170CW STPS80170CW Table 3: Absolute Ratings (limiting values, per diode) Symbol VRRM IF(RMS) Parameter Value Unit Repetitive peak reverse voltage 170 V RMS forward current 80 A 40 80 A Tc = 150 °C δ = 0.5 Per diode Per device IF(AV) Average forward current IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 500 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 38200 W -65 to + 175 °C 175 °C 10000 V/µs Tstg Storage temperature range Tj Maximum operating junction temperature * dV/dt dPtot * : --------------dTj < Critical rate of rise of reverse voltage 1 -------------------------- thermal runaway condition for a diode on its own heatsink Rth ( j – a ) September 2005 REV. 1 1/6 STPS80170C Table 4: Thermal Parameters Symbol Rth(j-c) Parameter Junction to case Rth(c) Value Unit Per diode Total 0.7 0.5 °C/W Coupling 0.3 When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 5: Static Electrical Characteristics (per diode) Symbol Parameter IR * Reverse leakage current Tests conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C VF ** Forward voltage drop Tj = 125 °C Tj = 25 °C Tj = 125 °C Pulse test: Min. VR = VRRM IF = 40 A Max. Unit 80 µA 20 80 mA 0.80 0.84 0.68 0.74 0.90 0.96 0.80 0.86 V IF = 80 A * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% 2 To evaluate the conduction losses use the following equation: P = 0.62 x IF(AV) + 0.003 IF (RMS) 2/6 Typ STPS80170C Figure 1: Average forward power dissipation versus average forward current (per diode) Figure 2: Average forward current versus ambient temperature (δ = 0.5, per diode) PF(AV)(W) IF(AV)(A) 45 40 d=0.1 d=0.2 d=1 d=0.5 Rth(j-a)=Rth(j-c) 40 35 d=0.05 35 30 30 25 25 20 20 15 15 Rth(j-a)=15°C/W 10 T 5 d=tp/T IF(AV)(A) T 10 5 tp 0 d=tp/T tp Tamb (°C) 0 0 5 10 15 20 25 30 35 40 Figure 3: Normalized avalanche derating versus pulse duration 45 50 power PARM (t p ) PARM (1µs) 0 50 75 100 125 150 Figure 4: Normalized avalanche derating versus junction temperature 1.2 1 25 175 power PARM (t p ) PARM (25°C) 1 0.1 0.8 0.6 0.01 0.4 0.2 Tj (°C) t p (µs) 0.001 0.01 0.1 1 10 100 1000 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) 0 25 75 100 125 150 Figure 6: Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) IM(A) 500 1.0 450 0.9 400 0.8 350 0.7 d=0.5 300 TC=50°C 250 0.6 0.5 200 TC=75°C 150 100 50 TC=125°C IM 50 t 0 1.E-03 1.E-02 d=0.2 0.3 d=0.1 T 0.2 0.1 t(s) d =0.5 0.4 1.E-01 1.E+00 Single pulse 0.0 1.E-03 d=Tp/T tP(s) 1.E-02 1.E-01 tp 1.E+00 3/6 STPS80170C Figure 7: Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 8: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) IR(µA) 10000 1.E+06 1.E+05 F=1MHz VOSC=30mVRMS Tj=25°C Tj=150°C 1.E+04 Tj=125°C Tj=100°C 1.E+03 1000 Tj=75°C 1.E+02 Tj=50°C 1.E+01 Tj=25°C 1.E+00 VR(V) VR(V) 1.E-01 0 100 1 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 Figure 9: Forward voltage drop versus forward current (per diode, low level) 10 100 1000 Figure 10: Forward voltage drop versus forward current (per diode, high level) IFM(A) IFM(A) 1000 40 35 Tj=125°C (Maximum values) 30 Tj=125°C (Maximum values) 100 25 20 Tj=125°C (Typical values) Tj=125°C (Typical values) Tj=25°C (Maximum values) 15 Tj=25°C (Maximum values) 10 10 5 VFM(V) VFM(V) 1 0 0.0 4/6 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 STPS80170C Figure 11: TO-247 Package Mechanical Data DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 0.429 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 0.728 L3 14.20 14.80 0.559 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 V 5° 5° V2 60° 60° Dia. 3.55 3.65 0.139 REF. V V Dia A H L5 L L2 L4 F2 F1 L1 F3 V2 F4 D L3 F(x3) M G E Max. 0.203 0.102 0.031 0.055 0.094 0.133 0.620 0.793 0.169 0.582 0.118 0.143 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 6: Ordering Information ■ ■ ■ ■ Ordering type Marking Package Weight Base qty Delivery mode STPS80170CW STPS80170CW TO-247 4.4 g 30 Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 Nm. Maximum torque value: 1.0 Nm. Table 7: Revision History Date Revision 16-Sep-2005 1 Description of Changes First issue. 5/6 STPS80170C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6