STPS20170CT ® HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) 2 x 10 A VRRM 170 V Tj 175°C VF (max) 0.75 V K A2 FEATURES AND BENEFITS ■ ■ ■ ■ HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE CAPABILITY SPECIFIED A2 A1 K TO-220AB STPS20150CT DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 170 V IF(RMS) RMS forward current 30 A Per diode 10 A Per device 20 IF(AV) Average forward current δ = 0.5 Tc = 155°C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 180 A PARM Repetitive peak avalanche power tp = 1µs 6700 W - 65 to + 175 °C 175 °C 10000 V/µs Tstg Tj dV/dt Storage temperature range Maximum operating junction temperature* Critical rate of rise of reverse voltage Tj = 25°C * Thermal runaway condition for a diode on its own heatsink δPtot/δTj < 1/(Rth(j-a)) March 2004 - Ed: 1 1/5 STPS20170CT THERMAL RESISTANCES Symbol Rth(j-c) Parameter Junction to case Rth(c) Value Unit Per diode 2.2 °C/W Total 1.3 Coupling 0.3 When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter IR * Reverse leakage current Tests conditions Tj = 25°C Min. Typ. VR = VRRM Tj = 125°C VF ** Pulse test : Forward voltage drop Tj = 25°C IF = 10 A Tj = 125°C IF = 10 A Tj = 25°C IF = 20 A Tj = 125°C IF = 20 A * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.011 IF2(RMS) 2/5 0.69 Max. Unit 15 µA 15 mA 0.90 V 0.75 0.99 0.79 0.86 STPS20170CT Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average forward current versus ambient temperature (δ = 0.5, per diode). IF(AV)(A) PF(AV)(W) 10 12 δ = 0.1 δ = 0.05 9 δ = 0.2 δ = 0.5 11 Rth(j-a)=Rth(j-c) 10 8 9 7 δ=1 8 6 7 5 6 4 5 Rth(j-a)=15°C/W 4 3 2 T 3 T 2 1 IF(AV)(A) δ=tp/T 0 0 1 2 3 4 5 6 7 8 9 10 δ=tp/T 1 tp tp Tamb(°C) 0 11 12 Fig. 3: Normalized avalanche power derating versus pulse duration. 0 50 75 100 125 150 175 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 25 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(°C) tp(µs) 0.001 0.01 0.1 1 0 10 100 0 1000 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). 25 50 75 100 125 150 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. IM(A) Zth(j-c)/Rth(j-c) 150 1.0 0.9 125 0.8 0.7 100 TC=50°C 75 0.5 TC=75°C 50 0.4 0.3 TC=125°C IM 25 T 0.2 Single pulse t 0.1 t(s) δ=0.5 tp(s) δ=tp/T tp 0.0 0 1.E-03 0.6 1.E-02 1.E-01 1.E+00 1.E-03 1.E-02 1.E-01 1.E+00 3/5 STPS20170CT Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). IR(µA) C(pF) 1000 1.E+05 F=1MHz VOSC=30mVRMS Tj=25°C Tj=175°C 1.E+04 Tj=150°C Tj=125°C 1.E+03 100 1.E+02 Tj=100°C 1.E+01 1.E+00 Tj=25°C VR(V) VR(V) 10 1.E-01 0 25 50 75 100 125 150 175 Fig. 9: Forward voltage drop versus forward current (per diode). IFM(A) 100.0 Tj=125°C (maximum values) 10.0 Tj=25°C (maximum values) Tj=125°C (typical values) 1.0 VFM(V) 0.1 0.0 4/5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 1000 STPS20170CT PACKAGE MECHANICAL DATA TO-220AB REF. A H2 Dia C L5 L7 L6 L2 F2 F1 D L9 L4 F M G1 E G A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 OTHER INFORMATION ■ Ordering type Marking Package Weight Base qty Delivery mode STPS20170CT STPS20170CT TO-220AB 2.20 g 50 Tube EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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