STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR-AP 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω 0.3A 3.3W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ ESD improved capability ■ New high voltage benchmark TO-92 (Ammopak) 2 2 1 3 3 2 1 SOT-223 TO-251(IPAK) Description Figure 1. Internal schematic diagram The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Application ■ Switching applications Table 1. Device summary Order codes Marking Package Packaging STD1LNK60Z-1 D1LNK60Z TO-251(IPAK) Tube STQ1NK60ZR-AP 1NK60ZR TO-92 Ammopak STN1NK60Z 1NK60Z SOT-223 Tape & reel July 2007 Rev 11 1/16 www.st.com 16 Contents STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit IPAK TO-92 SOT-223 VDS Drain-source voltage (VGS = 0) 600 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 0.8 ID Drain current (continuous) at TC=100°C 0.5 0.189 A Drain current (pulsed) 3.2 1.2 A Total dissipation at TC = 25°C 25 3 3.3 W 0.24 0.25 0.26 W/°C IDM (1) PTOT Derating factor VESD(G-D) dv/dt(2) TJ Tstg 0.3 0.3 A Gate source ESD(HBM-C=100pF, R=1.5KΩ) 800 V Peak diode recovery voltage slope 4.5 V/ns -55 to 150 °C Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤0.3A, di/dt ≤200A/µs, VDD =80%V(BR)DSS Table 3. Thermal resistance Value Symbol Rthj-case Rthj-a Rthj-lead Tl Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Thermal resistance junction-lead Max Maximum lead temperature for soldering purpose Unit IPAK TO-92 SOT-223 5 -- -- °C/W 100 120 37.87(1) °C/W -- 40 -- °C/W 275 260 °C Value Unit 1. When mounted on 1 inch² FR-4 board, 2 Oz Cu Table 4. Symbol Avalanche data Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 0.8 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 60 mJ 3/16 Electrical characteristics 2 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 1mA, VGS= 0 Min. Typ. Max. 600 Unit V VDS = Max rating, VDS = Max rating @125°C 1 50 µA µA Gate body leakage current (VDS = 0) VGS = ±20V ±10 µA VGS(th) Gate threshold voltage VDS= VGS, ID = 50µA 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 0.4A 13 15 Ω Typ. Max. Unit IDSS Zero gate voltage drain current (VGS = 0) IGSS Table 6. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Qg Qgd Test conditions Min. Forward transconductance VDS =15V, ID = 0.4A 0.5 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 94 17.6 2.8 pF pF pF VGS=0, VDS =0V to 480V 11 pF VDD=480V, ID = 0.8A 4.9 1 2.7 Coss eq(2). Equivalent output capacitance Qgs 3 Total gate charge Gate-source charge Gate-drain charge VGS =10V (see Figure 21) 6.9 nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. Unit 5.5 5 13 28 VDD=300 V, ID= 0.4A, RG=4.7Ω, VGS=10V (see Figure 20) ns ns ns ns Source drain diode Max Unit Source-drain current 0.8 A ISDM(1) Source-drain current (pulsed) 2.4 A VSD(2) Forward on voltage ISD=0.8A, VGS=0 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD=0.8A, ISD trr Qrr IRRM trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min di/dt = 100A/µs, VDD=20V, Tj=25°C ISD=0.8A, di/dt = 100A/µs, VDD=20V, Tj=150°C Typ. 135 216 3.2 ns nC A 140 224 3.2 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 9. Symbol BVGSO(1) 1. Gate-source zener diode Parameter Gate-source breakdown voltage Test conditions Igs=±1mA (open drain) Min. Typ. Max. Unit 30 V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 5/16 Electrical characteristics STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for IPAK Figure 3. Thermal impedance for IPAK Figure 4. Safe operating area for TO-92 Figure 5. Thermal impedance for TO-92 Figure 6. Safe operating area for SOT-223 Figure 7. Thermal impedance for SOT-223 6/16 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Figure 8. Output characteristics Figure 10. Transconductance Electrical characteristics Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/16 Electrical characteristics STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature Figure 19. Max Id Current vs Tc 8/16 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z 3 Test circuit Test circuit Figure 20. Switching times test circuit for resistive load Figure 21. Gate charge test circuit Figure 22. Test circuit for inductive load Figure 23. Unclamped inductive load test switching and diode recovery times circuit Figure 24. Unclamped inductive waveform Figure 25. Switching time waveform 9/16 Package mechanical data 4 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Package mechanical data TO-92 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 0.055 e1 1.14 1.40 0.044 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 V 5° 0.022 5° 11/16 Package mechanical data STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z TO-92 AMMOPACK DIM. mm. MIN. TYP MIN. TYP. MAX. A1 4.45 4.95 0.170 0.194 T 3.30 3.94 0.130 0.155 T1 1.6 T2 2.3 d 0.41 0.06 0.09 0.56 0.016 0.022 P0 12.5 12.7 12.9 0.49 0.5 0.51 P2 5.65 6.35 7.05 0.22 0.25 0.27 2.54 2.94 0.09 0.1 0.11 2 -0.08 19 0.69 0.71 0.74 F1, F2 2.44 delta H -2 W 17.5 18 W0 5.7 6 6.3 0.22 0.23 0.24 W1 8.5 9 9.25 0.33 0.35 0.36 W2 18.5 H0 15.5 D0 0.08 0.5 H 16 H1 12/16 inch MAX. 0.02 20.5 0.72 0.80 16.5 0.61 0.63 0.65 0.15 0.157 0.16 25 3.8 4 4.2 t 0.9 L 11 l1 3 delta P -1 0.98 0.035 0.43 0.11 1 -0.04 0.04 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Package mechanical data TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 13/16 Package mechanical data STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z SOT-223 MECHANICAL DATA mm DIM. mils MIN. TYP. MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 L 6.3 6.5 6.7 248 255.9 263.8 L e1 l2 d a c b e4 f l1 C B C E g P008B 14/16 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z 5 Revision history Revision history Table 10. Revision history Date Revision Changes 19-Mar-2003 3 First electronic version 15-May-2003 4 Removed DPAK 09-Jun-2003 5 Final datasheet 17-Nov-2004 6 Inserted SOT-223 15-Feb-2005 7 Modified Figure 4. 07-Sep-2005 8 Inserted ecopack indication 22-Feb-2006 9 The document has been reformatted 01-Jun-2007 10 Order code table on first page has been updated 19-Jul-2007 11 Table 1.: Device summary has been updated 15/16 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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