STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 Ω, 10 A, SuperMESH™ Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS RDS(on) max STB10NK60Z-1 600 V < 0.75 Ω 10 A 115 W STB10NK60Z 600 V < 0.75 Ω 10 A 115 W STP10NK60Z 600 V < 0.75 Ω 10 A 115 W STP10NK60ZFP 600 V < 0.75 Ω 10 A STW10NK60Z 600 V < 0.75 Ω 10 A 156 W Pw ID TO-247 TO-262 3 1 35 W TO-263 3 ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very good manufacturing reliability 1 Figure 1. 3 2 TO-220FP Application ■ 3 12 1 2 TO-220 Internal schematic diagram Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STB10NK60Z-1 B10NK60Z I²PAK Tube STB10NK60ZT4 B10NK60Z D²PAK Tape & reel STP10NK60ZFP P10NK60ZFP TO-220FP Tube STP10NK60Z P10NK60Z TO-220 Tube STW10NK60Z W10NK60Z TO-247 Tube November 2008 Rev 10 1/19 www.st.com 19 Contents STB10NK60Z, STP10NK60Z, STW10NK60Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ........................... 7 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STB10NK60Z, STP10NK60Z, STW10NK60Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 D²PAK,I²PAK TO-220FP VDS Drain-source voltage (VGS = 0) 600 VGS Gate-source voltage ± 30 ID Drain current (continuous) at TC = 25 °C V V (1) 10 TO-247 10 10 A (1) 5.7 A Drain current (continuous) at TC = 100 °C 5.7 5.7 IDM (2) Drain current (pulsed) 36 36 (1) 36 A PTOT Total dissipation at TC = 25 °C 115 35 156 W Derating factor 0.92 0.28 1.25 W/°C ID Vesd(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ) dv/dt (3) V 4.5 V/ns Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink VISO 4000 -- 2500 -- V (t=1 s;TC=25 °C) Operating junction temperature Storage temperature Tj Tstg -55 to 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD < 10A, di/dt < 200A/µs, VDD =80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter TO-220 I²PAK Unit D²PAK TO-220FP TO-247 Rthj-case Thermal resistance junction-case Max Rthj-pcb Thermal resistance junction-pcb Max (when mounted on minimum footprint) 60 Rthj-amb Thermal resistance junction-amb Max 62.5 Tl Maximum lead temperature for soldering purpose 1.09 3.6 0.8 °C/W °C/W 50 300 °C/W °C 3/19 Electrical ratings Table 4. Symbol 4/19 STB10NK60Z, STP10NK60Z, STW10NK60Z Avalanche characteristics Parameter Max value Unit 9 A IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj=25 °C, ID=IAR, VDD= 50 V) 300 mJ EAR Repetitive avalanche energy (pulse width limited by Tj max) 3.5 mJ STB10NK60Z, STP10NK60Z, STW10NK60Z 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown ID = 250 µA, VGS= 0 voltage Min. Typ. Max. Unit 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating, Tj=125 °C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V, VDS = 0 ±10 µA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 4.5 A 0.65 0.75 Ω Typ. Max. Unit Table 6. Symbol Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS =15 V, ID = 4.5 A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Coss eq(2) Qg Qgs Qgd 3 Min. 7.8 S 1370 156 37 pF pF pF VGS=0, VDS =0 to 480 V 90 pF VDD=480 V, ID = 8 A VGS =10 V (see Figure 20) 50 10 25 70 nC nC nC 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% 5/19 Electrical characteristics STB10NK60Z, STP10NK60Z, STW10NK60Z Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr Turn-on delay time Rise time VDD=300 V, ID=4 A, RG=4.7 Ω, VGS=10 V (see Figure 19) 20 20 ns ns td(off) tf Turn-off delay time Fall time VDD=300 V, ID=4 A, RG=4.7 Ω, VGS=10 V (see Figure 19) 55 30 ns ns Table 8. Source drain diode Symbol Parameter ISD ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD=10 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=8 A, di/dt = 100 A/µs, VDD=40 V, Tj=150 °C trr Qrr IRRM Test conditions Min. Typ. 570 4.3 15 Max. Unit 10 36 A A 1.6 V ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 9. Symbol BVGSO(1) Gate-source Zener diode Parameter Gate-source breakdown voltage Test conditions Igs=± 1 mA (open drain) Min Typ Max Unit 30 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components 6/19 V STB10NK60Z, STP10NK60Z, STW10NK60Z Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / I²PAK / D²PAK Figure 3. Thermal impedance for TO-220 / I²PAK / D²PAK Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 Figure 6. Safe operating area for TO-220FP Figure 7. Thermal impedance for TO-220FP 7/19 Electrical characteristics Figure 8. Output characteristics Figure 10. Transconductance STB10NK60Z, STP10NK60Z, STW10NK60Z Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 8/19 STB10NK60Z, STP10NK60Z, STW10NK60Z Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Maximum avalanche energy vs temperature Figure 18. Normalized BVDSS vs temperature 9/19 Test circuits 3 STB10NK60Z, STP10NK60Z, STW10NK60Z Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 10/19 0 10% AM01473v1 STB10NK60Z, STP10NK60Z, STW10NK60Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/19 Package mechanical data STB10NK60Z, STP10NK60Z, STW10NK60Z TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 12/19 Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 STB10NK60Z, STP10NK60Z, STW10NK60Z Package mechanical data TO-220FP mechanical data mm. Dim. Min. A 4.40 inch Typ Max. Min. 4.60 0.173 Typ. 0.181 Max. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.017 0.027 F 0.75 1.00 0.030 0.039 F1 1.15 1.50 0.045 0.067 F2 1.15 1.50 0.045 0.067 G 4.95 5.20 0.195 0.204 G1 2.40 2.70 0.094 0.106 H 10 10.40 0.393 L2 16 0.409 0.630 28.6 30.6 1.126 L4 9.80 10.60 0.385 1.204 0.417 L5 2.9 3.6 0.114 0.141 L6 15.90 16.40 0.626 0.645 L7 9 9.30 0.354 0.366 Dia 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 Dia F F1 L7 L2 L5 1 2 3 L4 7012510-I 13/19 Package mechanical data STB10NK60Z, STP10NK60Z, STW10NK60Z TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e Max. 5.15 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 øR 4.50 S 14/19 Typ 3.65 5.50 5.50 STB10NK60Z, STP10NK60Z, STW10NK60Z Package mechanical data I²PAK (TO-262) mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 15/19 Package mechanical data STB10NK60Z, STP10NK60Z, STW10NK60Z D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° 0079457_M 16/19 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° STB10NK60Z, STP10NK60Z, STW10NK60Z 5 Packaging mechanical data Packaging mechanical data D 2 PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MIN. inch MAX. MIN. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.075 0.082 0.933 0.956 17/19 Revision history 6 STB10NK60Z, STP10NK60Z, STW10NK60Z Revision history Table 10. 18/19 Revision history Date Revision Changes 29-Sep-2005 6 Inserted ecopack indication 29-Oct-2005 7 New value inserted in Table 6 11-Apr-2006 8 New template 19-Sep-2006 9 Unit changed in Table 5 17-Nov-2008 10 Updated Section 4: Package mechanical data STB10NK60Z, STP10NK60Z, STW10NK60Z Please Read Carefully: Information in this document is provided solely in connection with ST products. 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