STP6NK70Z STF6NK70Z - STW6NK70Z N-channel 700V - 1.5Ω - 5A - TO-220/TO-220FP Zener-protected SuperMESH™ Power MOSFET General features VDSS (@Tjmax) RDS(on) STP6NK70Z 700 V < 1.8 Ω 5A STF6NK70Z 700 V <1.8 Ω 5 A(1) STW6NK70Z 700 V < 1.8 Ω 5A Type ID TO-220 TO-247 1. Limited only by maximum temperature allowed ■ Extremely high dv/dt capability 3 1 ■ Improved esd capability ■ 100% avalanche rated ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility 2 TO-220FP Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Part number Marking STP6NK70Z STF6NK70Z STW6NK70Z August 2006 Package Packaging P6NK70Z TO-220 Tube F6NK70Z TO-220FP Tube W5NK90Z TO-247 Tube Rev 4 1/16 www.st.com 16 Contents STP6NK70Z - STF6NK70Z - STW6NK70Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 2 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STP6NK70Z - STF6NK70Z - STW6NK70Z 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value TO-220/TO-247 Unit TO-220FP VDS Drain-source voltage (VGS = 0) 700 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 5 5 (2) A ID Drain current (continuous) at TC=100°C 3.15 3.15 (2) A IDM (1) Drain current (pulsed) 20 20 (2) A PTOT Total dissipation at TC = 25°C 110 30 W Derating factor 0.87 0.24 W/°C VESD (G-S) Gate source ESD (HBM-C=100pF, R=1.5KΩ) 4000 V dv/dt(3) Peak diode recovery voltage slope 4.5 V/ns VISO TJ Tstg Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc= 25°C) - Operating junction temperature Storage temperature 2500 -55 to 150 V °C 1. Pulse width limited by safe operation area 2. Limited only by maximum temperature allowed 3. ISD ≤5 A, di/dt ≤100A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Table 2. Thermal data Value Symbol Rthj-case Parameter Thermal resistance junction-case max Unit TO-220/TO-247 TO-220FP 1.14 4.2 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C 3/16 Electrical ratings Table 3. STP6NK70Z - STF6NK70Z - STW6NK70Z Avalanche characteristics Symbol IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Table 4. Symbol BVGSO 1.1 Parameter Max Value Unit 5 A 200 mJ Gate-source zener diode Parameter Gate-Source breakdown voltage Test conditions Igs=±1mA (Open drain) Min Typ. 30 Max Unit V Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/16 STP6NK70Z - STF6NK70Z - STW6NK70Z 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 1mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating, Tc=125°C IGSS Gate body leakage current VGS = ± 20V (VGS = 0) V(BR)DSS VGS(th) Gate threshold voltage VDS = VGS, ID = 100µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 2.5 A Table 6. Symbol Min. Typ. Max. 700 3 Unit V 1 50 µA µA ±10 µA 3.75 4.5 V 1.5 1.8 Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS =15V, ID = 2.5A 4.4 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 930 105 22 pF pF pF Equivalent output capacitance VGS=0, VDS =0V to 560V 70 pF td(on) tr td(off) tf Turn-on delay time Rise time Off-voltage rise time Fall time VDD=350 V, ID= 2.5 A, RG=4.7Ω, VGS=10V (see Figure 18) 17 18 45 30 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=560V, ID = 5A VGS =10V (see Figure 19) 34 6.5 17 Cosseq(2). 47 nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/16 Electrical characteristics Table 7. Symbol ISD Source drain diode Parameter Min Typ. Max Unit Source-drain current 5 A Source-drain current (pulsed) 20 A (2) Forward on voltage ISD = 5 A, VGS=0 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5 A, di/dt = 100 A/µs VDD = 35 V (see Figure 20) 432 2.37 11 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5 A, di/dt = 100 A/µs VDD = 35 V, Tj = 150 °C (see Figure 20) 588 3.38 11.5 ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 6/16 Test conditions (1) ISDM VSD STP6NK70Z - STF6NK70Z - STW6NK70Z STP6NK70Z - STF6NK70Z - STW6NK70Z Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247 7/16 Electrical characteristics STP6NK70Z - STF6NK70Z - STW6NK70Z Figure 7. Output characteristics Figure 8. Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 8/16 STP6NK70Z - STF6NK70Z - STW6NK70Z Figure 13. Source-drain diode forward characteristics Electrical characteristics Figure 14. Normalizzed BVdss vs temperature Figure 15. Avalanche Energy vs starting Tj 9/16 Test circuit 3 STP6NK70Z - STF6NK70Z - STW6NK70Z Test circuit Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive wafeform Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load switching and diode recovery times 10/16 STP6NK70Z - STF6NK70Z - STW6NK70Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/16 Package mechanical data STP6NK70Z - STF6NK70Z - STW6NK70Z TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 12/16 TYP 5.50 0.216 STP6NK70Z - STF6NK70Z - STW6NK70Z Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 13/16 Package mechanical data STP6NK70Z - STF6NK70Z - STW6NK70Z TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 14/16 L5 1 2 3 L4 STP6NK70Z - STF6NK70Z - STW6NK70Z 5 Revision history Revision history Table 8. Revision history Date Revision Changes 12-Nov-2004 1 First release 08-Sep-2004 2 Complete version with curves 06-Sep-2005 3 Inserted Ecopack indication 16-Aug-2006 4 New template, no content change 15/16 STP6NK70Z - STF6NK70Z - STW6NK70Z Please Read Carefully: Information in this document is provided solely in connection with ST products. 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