STMICROELECTRONICS STW6NK70Z

STP6NK70Z
STF6NK70Z - STW6NK70Z
N-channel 700V - 1.5Ω - 5A - TO-220/TO-220FP
Zener-protected SuperMESH™ Power MOSFET
General features
VDSS
(@Tjmax)
RDS(on)
STP6NK70Z
700 V
< 1.8 Ω
5A
STF6NK70Z
700 V
<1.8 Ω
5 A(1)
STW6NK70Z
700 V
< 1.8 Ω
5A
Type
ID
TO-220
TO-247
1. Limited only by maximum temperature allowed
■
Extremely high dv/dt capability
3
1
■
Improved esd capability
■
100% avalanche rated
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing repeatibility
2
TO-220FP
Internal schematic diagram
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
stripbased PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■
Switching application
Order codes
Part number
Marking
STP6NK70Z
STF6NK70Z
STW6NK70Z
August 2006
Package
Packaging
P6NK70Z
TO-220
Tube
F6NK70Z
TO-220FP
Tube
W5NK90Z
TO-247
Tube
Rev 4
1/16
www.st.com
16
Contents
STP6NK70Z - STF6NK70Z - STW6NK70Z
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
2
Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
............................ 7
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STP6NK70Z - STF6NK70Z - STW6NK70Z
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
TO-220/TO-247
Unit
TO-220FP
VDS
Drain-source voltage (VGS = 0)
700
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
5
5 (2)
A
ID
Drain current (continuous) at TC=100°C
3.15
3.15 (2)
A
IDM (1)
Drain current (pulsed)
20
20 (2)
A
PTOT
Total dissipation at TC = 25°C
110
30
W
Derating factor
0.87
0.24
W/°C
VESD (G-S)
Gate source ESD (HBM-C=100pF,
R=1.5KΩ)
4000
V
dv/dt(3)
Peak diode recovery voltage slope
4.5
V/ns
VISO
TJ
Tstg
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s; Tc= 25°C)
-
Operating junction temperature
Storage temperature
2500
-55 to 150
V
°C
1. Pulse width limited by safe operation area
2. Limited only by maximum temperature allowed
3. ISD ≤5 A, di/dt ≤100A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Table 2.
Thermal data
Value
Symbol
Rthj-case
Parameter
Thermal resistance junction-case max
Unit
TO-220/TO-247
TO-220FP
1.14
4.2
°C/W
Rthj-a
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
3/16
Electrical ratings
Table 3.
STP6NK70Z - STF6NK70Z - STW6NK70Z
Avalanche characteristics
Symbol
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Table 4.
Symbol
BVGSO
1.1
Parameter
Max Value
Unit
5
A
200
mJ
Gate-source zener diode
Parameter
Gate-Source breakdown
voltage
Test conditions
Igs=±1mA
(Open drain)
Min
Typ.
30
Max
Unit
V
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
4/16
STP6NK70Z - STF6NK70Z - STW6NK70Z
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating,
VDS = Max rating, Tc=125°C
IGSS
Gate body leakage current
VGS = ± 20V
(VGS = 0)
V(BR)DSS
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100µA
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 2.5 A
Table 6.
Symbol
Min.
Typ.
Max.
700
3
Unit
V
1
50
µA
µA
±10
µA
3.75
4.5
V
1.5
1.8
Ω
Typ.
Max.
Unit
Dynamic
Parameter
Test conditions
Min.
gfs (1)
Forward transconductance VDS =15V, ID = 2.5A
4.4
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
930
105
22
pF
pF
pF
Equivalent output
capacitance
VGS=0, VDS =0V to 560V
70
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=350 V, ID= 2.5 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
17
18
45
30
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=560V, ID = 5A
VGS =10V
(see Figure 19)
34
6.5
17
Cosseq(2).
47
nC
nC
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
5/16
Electrical characteristics
Table 7.
Symbol
ISD
Source drain diode
Parameter
Min
Typ.
Max
Unit
Source-drain current
5
A
Source-drain current (pulsed)
20
A
(2)
Forward on voltage
ISD = 5 A, VGS=0
1.6
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100
A/µs VDD = 35 V
(see Figure 20)
432
2.37
11
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100
A/µs VDD = 35 V,
Tj = 150 °C
(see Figure 20)
588
3.38
11.5
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
6/16
Test conditions
(1)
ISDM
VSD
STP6NK70Z - STF6NK70Z - STW6NK70Z
STP6NK70Z - STF6NK70Z - STW6NK70Z
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Safe operating area for TO-220FP
Figure 4.
Thermal impedance for TO-220FP
Figure 5.
Safe operating area for TO-247
Figure 6.
Thermal impedance for TO-247
7/16
Electrical characteristics
STP6NK70Z - STF6NK70Z - STW6NK70Z
Figure 7.
Output characteristics
Figure 8.
Transfer characteristics
Figure 9.
Transconductance
Figure 10. Static drain-source on resistance
Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations
8/16
STP6NK70Z - STF6NK70Z - STW6NK70Z
Figure 13. Source-drain diode forward
characteristics
Electrical characteristics
Figure 14. Normalizzed BVdss vs temperature
Figure 15. Avalanche Energy vs starting Tj
9/16
Test circuit
3
STP6NK70Z - STF6NK70Z - STW6NK70Z
Test circuit
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive wafeform
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
10/16
STP6NK70Z - STF6NK70Z - STW6NK70Z
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
11/16
Package mechanical data
STP6NK70Z - STF6NK70Z - STW6NK70Z
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
0.620
0.214
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
12/16
TYP
5.50
0.216
STP6NK70Z - STF6NK70Z - STW6NK70Z
Package mechanical data
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
13/16
Package mechanical data
STP6NK70Z - STF6NK70Z - STW6NK70Z
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
14/16
L5
1 2 3
L4
STP6NK70Z - STF6NK70Z - STW6NK70Z
5
Revision history
Revision history
Table 8.
Revision history
Date
Revision
Changes
12-Nov-2004
1
First release
08-Sep-2004
2
Complete version with curves
06-Sep-2005
3
Inserted Ecopack indication
16-Aug-2006
4
New template, no content change
15/16
STP6NK70Z - STF6NK70Z - STW6NK70Z
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