STS12NH3LL N-channel 30 V - 0.008 Ω - 12 A - SO-8 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STS12NH3LL 30 V <0.0105 Ω 12 A ■ Optimal RDS(on) x Qg trade-off @ 4.5 V ■ Switching losses reduced ■ Low input capacitance ■ Low threshold device SO-8 Application ■ Switching applications Description Figure 1. Internal schematic diagram This series is based on the latest generation of ST’s proprietary “STripFET™” technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in high-frequency DC-DC converters. It’s therefore ideal for high-density converters in telecom and computer applications. Table 1. Device summary Order code Marking Packag Packaging STS12NH3LL 12H3LL SO-8 Tape & reel November 2007 Rev 9 1/13 www.st.com 13 Contents STS12NH3LL Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ............................................... 8 STS12NH3LL 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VDS Parameter Drain-source voltage (VGS = 0) Value Unit 30 V VGS(1) Gate-source voltage ± 16 V VGS(2) Gate-source voltage ± 18 V ID Drain current (continuous) at TC = 25 °C 12 A ID Drain current (continuous) at TC=100 °C 7.5 A Drain current (pulsed) 48 A PTOT Total dissipation at TC = 25 °C 2.7 W TJ Operating junction temperature Storage temperature -55 to 150 °C Value Unit 47 °C/W IDM (3) Tstg 1. Continuous mode 2. Guaranteed for test time ≤ 15 ms 3. Pulse width limited by safe operating area Table 3. Thermal resistance Symbol Rthj-amb (1) Parameter Thermal resistance junction-ambient 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec 3/13 Electrical characteristics 2 STS12NH3LL Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±16 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 6 A Symbol Min. Typ. Max. 30 VDS = Max rating @125 °C 1 10 µA µA ±100 nA 1 V 0.008 0.0105 0.010 0.013 VGS= 4.5 V, ID= 6 A Unit V VDS = Max rating, IDSS Table 5. Ω Ω Dynamic Parameter Test conditions Min. Typ. Max. Unit gfs Forward transconductance VDS =10 V, ID = 12 A 38 S Ciss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 965 285 38 pF pF pF Coss Crss Qg Total gate charge Gate-source charge Gate-drain charge VDD=15 V, ID = 12 A (see Figure 20) 9 3.7 3 VDD=15 V, ID = 12 A 2.5 nC Qgs2 Pre Vth gate-to-source charge Post Vth gate-to-source charge 1.2 nC RG Gate Input Resistance Qgs Qgd Qgs1 4/13 On/off states VGS =4.5 V 12 nC nC nC VGS =4.5 V (see Figure 20) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain 0.5 1.5 2.5 Ω STS12NH3LL Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. 15 32 18 8.5 VDD=15 V, ID= 6 A, RG=4.7 Ω, VGS=4.5 V (see Figure 14) Unit ns ns ns ns Source drain diode Max Unit Source-drain current 12 A ISDM(1) Source-drain current (pulsed) 48 A VSD(2) Forward on Voltage 1.3 V ISD trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min Typ. ISD=12 A, VGS=0 ISD=12 A, di/dt = 100 A/µs, VDD=20 V, Tj=150 °C (see Figure 16) 24 17.4 1.45 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% 5/13 Electrical characteristics STS12NH3LL 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/13 STS12NH3LL Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature 7/13 Test circuit 3 STS12NH3LL Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform 8/13 Figure 19. Switching time waveform STS12NH3LL Test circuit Figure 20. Gate charge waveform Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd 9/13 Package mechanical data 4 STS12NH3LL Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STS12NH3LL Package mechanical data SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 c1 45 (typ.) 1.27 e e3 3.81 0.150 F 3.8 4.0 0.14 L 0.4 1.27 0.015 M S 0.244 0.050 0.6 0.157 0.050 0.023 8 (max.) 11/13 Revision history 5 STS12NH3LL Revision history Table 8. 12/13 Document revision history Date Revision Changes 22-Jun2004 1 First release 03-Aug-2004 2 Some value change in Table 2 08-Mar-2005 3 Complete version 17-Mar-2005 4 Ron value change (see Table 4) 23-Jun-2005 5 New Rg value on Table 5 30-Mar-2006 6 The document has been reformatted 17-Apr-2007 7 New parameters on Table 5 and new Figure 20 23-Apr-2007 8 Modified value on Table 2 26-Nov-2007 9 Modified marking on Table 1 STS12NH3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. 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