STD70N2LH5 STU70N2LH5 N-channel 25 V, 0.006 Ω, 48 A - DPAK - IPAK STripFET™ V Power MOSFET Preliminary Data Features Type VDSS RDS(on) max ID STD70N2LH5 25 V 0.0071 Ω 48 A STU70N2LH5 25 V 0.0075 Ω 48 A 3 3 ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses 2 1 DPAK 1 IPAK Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order codes Marking Package Packaging STD70N2LH5 70N2LH5 DPAK Tape & reel STU70N2LH5 70N2LH5 IPAK Tube September 2008 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/12 www.st.com 12 Electrical ratings 1 STD70N2LH5 - STU70N2LH5 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 25 V ± 22 V VDS Drain-source voltage (VGS=0) VGS Gate-Source voltage ID (1) Drain current (continuous) at TC = 25 °C 48 A ID Drain current (continuous) at TC = 100 °C 43 A IDM (2) Drain current (pulsed) 192 A PTOT Total dissipation at TC = 25 °C 60 W Derating factor 0.4 W/°C EAS (3) Single pulse avalanche energy TBD mJ Tj Operating junction temperature Storage temperature -55 to 175 °C Tstg 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25 °C, ID = 24 A, VDD = 12 V Table 3. Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.5 °C/W Rthj-amb Thermal resistance junction-case max 100 °C/W Maximum lead temperature for soldering purpose 275 °C Tj 2/12 Thermal resistance STD70N2LH5 - STU70N2LH5 2 Electrical characteristics Electrical characteristics (TCASE = 25°C unless otherwise specified) Table 4. Symbol V(BR)DSS Static Parameter Drain-source breakdown Voltage Test conditions ID = 250 µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ± 22 V Gate threshold voltage VDS= VGS, ID = 250 µA VGS= 5 V, ID= 24 A VGS= 5 V, ID= 24 A Symbol Ciss Coss Crss Qg Qgs Qgd Qgs1 Qgs2 RG µA µA ±100 nA V 0.0071 Ω 0.0064 0.0075 Ω 0.008 Ω 0.006 SMD version Table 5. 1 10 1 VGS= 10 V, ID= 24 A Unit V VDS = 25 V, TC = 125 °C SMD version Static drain-source on resistance Max. 25 VGS= 10 V, ID= 24 A RDS(on) Typ. VDS = 25 V IDSS VGS(th) Min. 0.01 0.0084 0.0104 Ω Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 Total gate charge Gate-source charge Gate-drain charge VGS =5 V Pre Vth gate-to-source charge Post Vth gate-to-source charge VGS =5 V Gate input resistance Min Typ. Max. Unit 1300 300 50 pF pF pF (Figure 3) 8 TBD TBD nC nC nC VDD=15 V, ID = 48 A TBD nC (Figure 8) TBD nC f=1 MHz gate bias Bias= 0 test signal level=20 mV open drain 1.1 Ω VDD=15 V, ID = 48 A 3/12 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol ISD STD70N2LH5 - STU70N2LH5 Switching on/off (resistive load) Parameter Turn-on delay time Rise time Turn-off delay time Fall time RG=4.7 Ω, VGS= 10 V (Figure 2 and Figure 7) VDD=10 V, ID= 24 A, RG=4.7 Ω, VGS= 10 V (Figure 2 and Figure 7) Test conditions Forward on voltage Max. Unit TBD TBD ns ns TBD TBD ns ns Min. Typ. Reverse recovery time Reverse recovery charge Reverse recovery current ISD=24 A, VGS=0 ISD=48 A, di/dt =100 A/µs, VDD=20 V, Tj = 25 °C (Figure 4) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/12 Typ. Source-drain current VSD IRRM VDD=10 V, ID= 24 A, Parameter Source-drain current (pulsed)(1) Qrr Min. Source drain diode ISDM trr Test conditions TBD TBD TBD Max. Unit 48 192 A A 1.1 V ns nC A STD70N2LH5 - STU70N2LH5 Test circuit 3 Test circuit Figure 2. Switching times test circuit for resistive load Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped Inductive load test circuit Figure 6. Unclamped inductive waveform Switching time waveform Figure 3. Figure 7. Gate charge test circuit 5/12 Test circuit Figure 8. 6/12 STD70N2LH5 - STU70N2LH5 Gate charge waveform STD70N2LH5 - STU70N2LH5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/12 Package mechanical data STD70N2LH5 - STU70N2LH5 DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 6.4 0.260 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 8/12 STD70N2LH5 - STU70N2LH5 Package mechanical data TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 0.260 E 6.4 6.6 0.252 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 9/12 Packaging mechanical data 5 STD70N2LH5 - STU70N2LH5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 10/12 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD70N2LH5 - STU70N2LH5 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 16-Jan-2008 1 First release 23-Sep-2008 2 VGS value has been changed on Table 2 and Table 5 11/12 STD70N2LH5 - STU70N2LH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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