STS2DNF30L Dual N-channel 30V - 0.09Ω - 3A SO-8 STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STS2DNF30L 30V <0.011Ω 3A ■ Standard outline for easy automated surface mount assembly ■ Low threshold gate drive S0-8 Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STS2DNF30L S2DNF30L SO-8 Tape & reel January 2007 Rev 5 1/12 www.st.com 12 Contents STS2DNF30L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STS2DNF30L 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (vgs = 0) 30 V VGS Gate- source voltage ±18 V ID Drain current (continuos) at TC = 25°C 3 A ID Drain current (continuos) at TC = 100°C 1.9 A 9 A 1.6 2 W W -55 to 150 °C 150 °C Thermal resistance junction-ambient Max single operation Thermal resistance junction-ambient Max dual operation 62.5 78 °C/W °C/W Maximum operating junction ambient 150 °C -55 to 175 °C IDM (1) Drain current (pulsed) PTOT Total dissipation at TC = 25°C dual operation Total dissipation at TC = 25°C single operation Tstg Storage temperature Tj Max. operating junction temperature 1. Pulse width limited by safe operating area Table 2. Rthj-a TJ Tstg Thermal data Storage temperature 3/12 Electrical characteristics 2 STS2DNF30L Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter V(BR)DSS Drain-source Breakdown voltage Test conditions ID = 250 µA, VGS = 0 30 Unit V µA VDS=Max rating, TC=125°C 10 µA ±100 nA 1.7 2.5 V 0.09 0.13 0.011 0.15 Ω Ω IGSS Gate-body leakage current (VDS = 0) VGS = ±18V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 1A VGS = 5V, ID = 1A gfs (1) Max. 1 Zero gate voltage Drain current (VGS = 0) Symbol Typ. VDS = Max rating IDSS Table 4. Min. 1 Dynamic Parameter Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions Min. VDS>ID(on)xRDS(on)max ID=2.5A VDS = 25V, f = 1 MHz, VGS = 0 VDD = 24V, ID = 2A, VGS = 10V Typ. Max. Unit 2.5 S 121 pF 45 pF 11 pF 4.5 nC 1.7 nC 0.9 nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5. Table 5. Symbol 4/12 Switching times Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=15 V, ID=1A, RG=4.7Ω, VGS= 4.5V (see Figure 12) 19 20 ns ns td(off) tf Turn-off delay time Fall time VDD=15 V, ID=1A, RG=4.7Ω, VGS= 4.5V (see Figure 12) 12 8 ns ns STS2DNF30L Electrical characteristics Table 6. Symbol ISD Source drain diode Parameter Test conditions Min. Typ. Max Unit Source-drain current 3 A ISDM (1) Source-drain current (pulsed) 12 A VSD (2) Forward on voltage ISD = 2A, VGS = 0 1.3 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2A, VDD = 30V di/dt = 100A/µs, Tj = 150°C (see Figure 14) trr Qrr IRRM 19 8.1 0.85 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/12 Electrical characteristics STS2DNF30L 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STS2DNF30L Electrical characteristics Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit 3 STS2DNF30L Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/12 Figure 17. Switching time waveform STS2DNF30L 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 9/12 Package mechanical data STS2DNF30L SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. TYP. 1.75 0.1 MAX. 0.068 0.25 a2 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 c1 45 (typ.) 1.27 e e3 3.81 0.150 3.8 4.0 0.14 L 0.4 1.27 0.015 S 0.244 0.050 F M 10/12 MIN. 0.6 0.157 0.050 0.023 8 (max.) STS2DNF30L 5 Revision history Revision history Table 7. Revision history Date Revision Changes 21-Jun-2004 3 Complete document 10-Nov-2006 4 The document has been reformatted 31-Jan-2007 5 Typo mistake on Table 1. 11/12 STS2DNF30L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12