STTA406 ® TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAJOR PRODUCT CHARACTERISTICS IP 4A VRRM 600 V trr (typ.) 25 ns VF (max) 1.5 V FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST, AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS DO-201AD DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all freewheel mode operations and is particularly suitable and efficient in motor control freewheel applications and in booster diode applications in power factor control circuitries. Packaged in DO-201AD this 600V device is particularly intended for use on 240V domestic mains. ABSOLUTE RATINGS (limiting values) Symbol VRRM Parameter Repetitive peak reverse voltage VALUE Unit 600 V Peak forward current (1) Tamb = 65°C δ = 0.5 4 A IFRM Repetitive peak forward current tp = 5µs F = 5kHz square 30 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 80 A 125 °C - 40 to 150 °C IP Tj Tstg Maximum operating junction temperature Storage temperature range (1) square waveform and on infinite heatsink TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 3C 1/5 STTA406 THERMAL DATA Symbol Parameter Rth(j-l) Junction to lead L lead = 10mm Rth(j-a) Junction to ambient on printed circuit Max. Unit 20 °C/W 75 °C/W L lead = 10mm STATIC ELECTRICAL CHARACTERISTICS Symbol VF ** IR * Parameter Forward voltage drop Reverse leakage current Vto Threshold voltage Rd Dynamic resistance Test pulse : Test conditions IF = 4 A VR = 0.8 VRRM Ip < 3.IF(AV) Typ. Max. Unit Tj = 25°C Tj = 125°C 1.25 1.75 1.5 V V Tj = 25°C Tj = 125°C 0.75 50 2 µA mA 1.15 V 85 mΩ Max. Unit Tj = 125°C * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + Rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Test conditions IF = 0.5A IR = 1A Irr = 0.25A Typ. 25 IF = 1A di/dt = -50A/µs VR = 30V ns 55 ns Max. Unit 200 ns 20 V TURN-ON SWITCHING Symbol 2/5 Parameter tfr Forward recovery time VFP Peak forward voltage Test conditions IF = 4 A dIF/dt = 100 A/µs Measured at 1.1 x VF max. Tj = 25°C Typ. STTA406 Fig. 1: Power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ=0.5). PF(av)(W) IF(av)(A) 3.5 δ = 0.1 3.0 δ = 0.2 δ = 0.5 δ = 0.05 2.5 δ=1 2.0 1.5 1.0 T 0.5 tp δ=tp/T IF(av)(A) 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Rth(j-a)=Rth(j-l) Rth(j-a)=75°C/W T δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm), recommended pad layout). K=[Zth(j-a)/Rth(j-a)] 1E+0 δ = 0.5 δ = 0.2 1E-1 δ = 0.1 1E-2 T Single pulse 1E-3 1E-3 1E-2 1E-1 Fig 4-2 : Forward voltage drop versus forward current (high level). 1E+0 1E+1 tp 1E+2 1E+3 Fig. 4-1: Forward voltage drop versus forward current (low level). IFM(A) IFM(A) 5 50 Tj=125°C Typical values 4 10 δ=tp/T tp(s) Tj=125°C Maximum values Tj=125°C Typical values 3 Tj=125°C Maximum values Tj=25°C Maximum values 2 1 VFM(V) 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 Tj=25°C Maximum values VFM(V) 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3/5 STTA406 Fig 5 : Reverse recovery time versus dIF/dt. Fig. 6: Reverse recovery current versus dIF/dt. trr(ns) 250 225 200 175 150 125 100 75 50 25 0 IRM(A) IF=Ip 90% confidence Tj=125°C dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 Fig. 7: Transient peak forward voltage versus dIF/dt. 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 IF=Ip 90% confidence Tj=25°C 10 5 dIF/dt(A/µs) 0 20 40 60 80 100 120 140 160 180 200 Fig. 8: Forward recovery time versus dIF/dt. tfr(ns) 350 IF=Ip 90% confidence Tj=25°C Vfr=2V 300 250 200 150 100 50 0 4/5 dIF/dt(A/µs) 0 20 50 100 150 200 250 300 350 400 450 500 C(pF) 15 0 dIF/dt(A/µs) 0 Fig. 9: Junction capacitance versus reverse voltage applied (typical values). VFP(V) 25 20 IF=Ip 90% confidence Tj=125°C 40 60 80 100 120 140 160 180 200 20 18 16 14 12 10 8 6 4 2 0 F=1MHz Tj=25°C VR(V) 1 10 100 200 STTA406 PACKAGE MECHANICAL DATA DO-201AD B note 1 A E B E ØD ØC note 1 ØD note 2 DIMENSIONS REF. Millimeters Min. A B Max. Min. 9.50 25.40 NOTES Inches Max. 0.374 1.000 ∅C 5.30 0.209 ∅D 1.30 0.051 E 1.25 0.049 Ordering type Marking 1 - The lead diameter ∅ D is not controlled over zone E 2 - The minimum axial length within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) Package Weight Base qty Delivery mode STTA406 STTA406 DO-201AD 1.166g 600 Ammopack STTA406RL STTA406 DO-201AD 1.166g 1900 Tape & reel Cooling method: by conversion (method A) Band indicated cathode Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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