STTH102 ® HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 1A VRRM 200 V Tj (max) 175 °C VF (max) 0.78 V trr (max) 20 ns FEATURES AND BENEFITS ■ ■ ■ ■ Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature DO-41 STTH102 DESCRIPTION The STTH102, which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(AV) Average forward current Tl = 130°C IFSM Surge non repetitive forward current tp = 10 ms Tstg Storage temperature range Tj Value Unit 200 V 1 A 50 A - 65 + 175 °C + 175 °C δ =0.5 Sinusoidal Maximum operating junction temperature THERMAL PARAMETERS Symbol Rth (j-a) Parameter Junction to ambient* Maximum Unit 50 °C/W * On infinite heatsink with 10mm length. August 2001 - Ed: 2A 1/5 STTH102 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests conditions IR* Reverse leakage current Tj = 25°C Min. VR = VRRM Tj = 125°C VF** Forward voltage drop Tj = 25°C Typ. 1 Max. Unit 1 µA 25 IF = 1A 0.97 Tj = 125°C 0.68 V 0.78 Pulse test: * tp = 5ms, δ < 2% ** tp = 380µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.65 x IF(AV) + 0.130 x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol Parameter trr Reverse recovery time IF = 0.5 A Irr = 0.25 A IR = 1A tfr Forward recovery time IF = 1 A dIF/dt = 50A/µs VFR = 1.1 x VFmax VFP Forward recovery voltage 2/5 Tests conditions Min. Typ. Max. Unit Tj = 25°C 12 20 ns Tj = 25°C 50 ns Tj = 25°C 1.8 V STTH102 Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ = 0.5). PF(av)(W) IF(av)(A) 1.0 δ = 0.05 0.9 δ = 0.2 δ = 0.1 1.2 δ = 0.5 Rth(j-a)=Rth(j-l) 1.0 0.8 δ=1 0.7 0.8 0.6 0.6 0.5 Rth(j-a)=110°C:W 0.4 0.4 0.3 T 0.2 0.2 0.1 IF(av)(A) δ=tp/T 0.0 0.00 0.25 0.50 0.75 Tamb(°C) tp 1.00 0.0 0 1.25 Fig. 3: Thermal resistance versus lead length. 25 50 75 100 125 150 175 Fig. 4: Relative variation of thermal impedance junction ambient versus pulse duration (Printed circuit board epoxy FR4, LIeads = 10mm). Zth(j-a)/Rth(j-a) Rth(°C/W) 1.0 120 Rth(j-a) 110 0.9 100 0.8 90 0.7 80 0.6 70 Rth(j-l) 60 0.5 50 0.4 40 0.3 30 0.2 20 10 0.1 Lleads(mm) 0 δ = 0.5 δ = 0.2 T δ = 0.1 tp(s) Single pulse δ=tp/T 0.0 5 10 Fig. 5: current. 15 20 25 Forward voltage drop versus forward 1.E-01 1.E+00 1.E+01 1.E+02 tp 1.E+03 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). IFM(A) C(pF) 100.0 100 F=1MHz Vosc=30mV Tj=25°C Tj=125°C (Maximum values) 10.0 Tj=25°C (Maximum values) Tj=125°C (Typical values) 10 1.0 VR(V) VFM(V) 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 1 10 100 1000 3/5 STTH102 Fig. 7: Reverse recovery time versus dIF/dt (90% confidence). Fig. 8: Peak reverse recovery current versus dIF/dt (90% confidence). trr(ns) IRM(A) 70 3.5 IF=1A VR=100V Tj=125°C 60 IF=1A VR=100V Tj=125°C 3.0 50 2.5 Tj=125°C 40 Tj=125°C 2.0 30 1.5 Tj=25°C Tj=25°C 20 1.0 10 0.5 dIF/dt(A/µs) dIF/dt(A/µs) 0 0.0 1 10 100 1000 Fig. 9: Relative variations of dynamic parameters versus junction temperature. IRM; trr; Qrr[Tj]/IRM; trr; Qrr[Tj=25°C] 3.5 IF=1A dIF/dt=200A/µs VR=100V 3.0 Qrr 2.5 2.0 trr 1.5 IRM Tj(°C) 1.0 25 4/5 50 75 100 125 150 175 1 10 100 1000 STTH102 PACKAGE MECHANICAL DATA DO-41 DIMENSIONS C O /D ■ ■ A C O / B REF. Millimeters Inches Min. Max. Min. Max. A 4.1 5.20 0.160 0.205 B 2 2.71 0.080 0.107 C 25.4 D 0.712 O /D 1 0.863 0.028 0.034 Ordering code Marking Package Weight Base qty Delivery mode STTH102 STTH102 DO-41 0.34 g 2000 Ammopack STTH102RL STTH102 DO-41 0.34 g 5000 Tape & reel Cooling method: by conduction (method A) Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5