STTH16R04C Ultrafast recovery diode Main product characteristics IF(AV) 2X8A VRRM 400 V Tj 175° C VF (typ) 0.9 V trr (typ) 25 ns A1 A2 A2 A2 A1 ■ Very low switching losses ■ High frequency and/or high pulsed current operation ■ High junction temperature ■ Insulated package: – TO-220FPAB Electrical insulation = 1500 VRMS Capacitance = 12 pF Description K K A1 TO-220AB STTH16R04CT Features and benefits TO-220FPAB STTH16R04CFP K A2 A1 D2PAK STTH16R04CG Order codes The STTH16R04C series uses ST's new 400 V planar Pt doping technology. The STTH16R04C is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. March 2007 K Rev 1 Part Number Marking STTH16R04CT STTH16R04CT STTH16R04CG STTH16R04CG STTH16R04CG-TR STTH16R04CG STTH16R04CFP STTH16R04CFP 1/10 www.st.com Characteristics STTH16R04C 1 Characteristics Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V IF(RMS) RMS forward current 30 A TO-220AB / D2PAK IF(AV) Average forward current, δ = 0.5 TO-220FPAB Per diode Tc = 150° C 8 Per device Tc = 145° C 16 Per diode Tc = 125° C 8 Per device Tc = 90° C 16 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal Tstg Tj A 120 A Storage temperature range -65 to +175 °C Maximum operating junction temperature range -40 to +175 °C Table 2. Thermal parameters Symbol Parameter TO-220AC / D2PAK Rth(j-c) Value Per diode 2 Per device 1.15 Per diode 4.6 per device 3.8 Per device 0.3 per device 3 Unit °C/W Junction to case TO-220FPAB TO-220AC / Rth(c) D2PAK Coupling °C/W TO-220FPAB When the diodes are used simultaneously: ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 2/10 STTH16R04C Characteristics Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Min Typ VF(2) Forward voltage drop µA 10 100 1.5 IF = 8 A Tj = 150° C 1.05 1.3 0.9 1.1 V Tj = 25° C Tj = 100° C Unit 10 VR = VRRM Tj = 25° C Tj = 100° C Max 1.75 IF = 16 A Tj = 150° C 1.25 1.55 1.12 1.37 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.83 x IF(AV) + 0.034 x IF2(RMS) Table 4. Symbol Dynamic characteristics Test conditions Typ Max IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C 35 50 IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C 25 35 Reverse recovery current IF = 8 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C 5.5 8 A S Softness factor IF = 8 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C 0.4 tfr Forward recovery time IF = 8 A, dIF/dt = 100 A/µs VFR = 1.1 x VFmax, Tj = 25° C 150 ns Forward recovery voltage IF = 8 A, dIF/dt = 100 A/µs Tj = 25° C trr IRM VFP Parameter Reverse recovery time Min Unit ns 2.9 V 3/10 Characteristics Figure 1. STTH16R04C Conduction losses versus average current Figure 2. P(W) 200 13 12 δ=0.05 δ=0.1 δ=0.5 δ=0.2 δ=1 Forward voltage drop versus forward current IFM(A) 180 11 TJ=150°C (Maximum values) 160 10 9 140 8 120 7 TJ=150°C (Typical values) 100 6 80 5 4 60 T 3 TJ=25°C (Maximum values) 40 2 1 δ=tp/T IF(AV)(A) 20 tp 0 VFM(V) 0 0 1 Figure 3. 2 3 4 5 6 7 8 9 10 11 Relative variation of thermal impedance junction to case versus pulse duration 0.0 0.4 Figure 4. 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 Relative variation of thermal impedance junction to case versus pulse duration TO-220FPAB Zth(j-c)/Rth(j-c) Zth(j-c)/Rth(j-c) 1.0 1.0 Single pulse TO-220FPAB Single pulse TO-220AB/D²PAK 0.1 tp(s) tp(s) 0.1 1.E-03 Figure 5. 1.E-02 1.E-01 1.E+00 Peak reverse recovery current versus dIF/dt (typical values) Figure 6. IRM(A) 12 140 IF= 8 A VR=320 V 11 0.0 1.E-03 1.E-02 1.E-01 9 1.E+01 Reverse recovery time versus dIF/dt (typical values) tRR(ns) IF= 8 A VR=320 V 120 10 1.E+00 100 8 7 80 6 Tj=125 °C 5 4 3 60 Tj=125 °C 40 Tj=25 °C Tj=25 °C 2 20 1 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 10 4/10 100 1000 10 100 1000 STTH16R04C Figure 7. 200 Characteristics Reverse recovery charges versus dIF/dt (typical values) Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, eCU = 35 µm) Rth(j-a) (°C/W) QRR(nC) 80 D²PAK IF= 8 A VR=320 V 180 Figure 8. 70 160 60 140 Tj=125 °C 120 50 100 40 80 30 60 20 Tj=25 °C 40 10 20 SCU(cm²) dIF/dt(A/µs) 0 0 10 100 Figure 9. Relative variations of dynamic parameters versus junction temperature 4 6 8 10 12 14 16 18 20 VFp(V) 5.0 IF= 8 A VR=320 V 1.2 2 Figure 10. Transient peak forward voltage versus dIF/dt (typical values) QRR [Tj]/QRR [Tj = 125° C] and IRM [Tj]/IRM [Tj = 125° C] 1.4 0 1000 IF=8 A Tj=125 °C 4.5 4.0 1.0 3.5 IRM 0.8 3.0 2.5 0.6 2.0 QRR 1.5 0.4 1.0 0.2 0.5 T j(°C) 0.0 dIF/dt(A/µs) 0.0 25 50 75 100 125 0 150 50 100 150 200 250 300 350 400 450 500 Figure 11. Forward recovery time versus dIF/dt Figure 12. Junction capacitance versus (typical values) reverse voltage applied (typical values) 700 tFR(ns) C(pF) 100 IF=8 A VFR=1.1 x V F max. Tj=125°C 600 F=1MHz VOSC=30mVRMS Tj=25°C 500 400 300 200 100 dIF/dt(A/µs) VR(V) 10 0 0 100 200 300 400 500 1 10 100 1000 5/10 Package information 2 STTH16R04C Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.8 Nm (TO-220FPAB) / 0.55 Nm (TO-220AB) ● Maximum torque value: 1.0 Nm (TO-220FPAB) / 0.70 Nm (TO-220AB) Table 5. D2PAK dimensions Dimensions Ref. A E C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm Millimeters Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 R V2 0.40 typ. 0° 16.90 10.30 5.08 1.30 6/10 3.70 0.016 typ. 8° Figure 13. D2PAK footprint (dimensions in mm) 8.90 Inches 0° 8° STTH16R04C Package information Table 6. TO-220AB dimensions Dimensions Ref. Millimeters Min. A 15.20 a1 C B ØI Typ. Max. Inches Min. Typ. 15.90 0.598 3.75 Max. 0.625 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 ØI 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 b2 L F A I4 l3 c2 a1 l2 a2 M b1 e c1 M 2.60 0.102 7/10 Package information Table 7. STTH16R04C TO-220FPAB dimensions Dimensions Ref. A B H Dia L6 L2 L7 L3 L5 F1 L4 F G Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 D F2 G1 Millimeters L2 E 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 Dia. 3.00 3.20 0.118 0.126 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 8/10 STTH16R04C 3 4 Ordering information Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH16R04CT STTH16R04CT TO-220AB 1.92 g 50 Tube 2 STTH16R04CG STTH16R04CG D PAK 1.48 g 50 Tube STTH16R04CG-TR STTH16R04CG D2PAK 1.48 g 1000 Tape and reel STTH16R04CFP STTH16R04CFP TO-220FPAB 1.69 g 50 Tube Revision history Date Revision 31-Mar-2007 1 Description of Changes First issue 9/10 STTH16R04C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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