STTH1R06 Turbo 2 ultrafast high voltage rectifier Table 1. Main product characteristics IF (AV) 1A VRRM 600 V IR (max) 75 µA Tj 175° C VF (typ) 1.0 V trr (max) 25 ns A A K K DO-41 STTH1R06 Features and benefits A ■ Ultrafast switching ■ Low reverse recovery current ■ Low thermal resistance ■ Reduces switching and conduction losses K SMB STTH1R06U Table 2. Description The STTH1R06, which uses ST Turbo 2 600 V technology, is especially suited as a boost diode in power factor correction circuitry. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. Table 3. Order codes Part number Marking STTH1R06 STTH1R06 STTH1R06RL STTH1R06 STTH1R06A HR6 STTH1R06U BR6 Absolute ratings (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward voltage IF(AV) Average forward current Surge non repetitive forward current Tstg Storage temperature range July 2007 Value Unit 600 V DO-41 10 SMA / SMB 7 A DO-41 Tc = 100° C δ = 0.5 SMA Tc = 125° C δ = 0.5 SMB Tc = 135° C δ = 0.5 DO-41 IFSM Tj SMA STTH1R06A 1 25 tp = 10ms sinusoidal SMA / SMB Maximum operating junction temperature Rev 4 A A 20 -65 to + 175 °C 175 °C 1/9 www.st.com 9 Characteristics STTH1R06 1 Characteristics Table 4. Thermal resistance Symbol Parameter Value (max) L = 10 mm Rth(j-l) Rth(j-a) Junction to lead Junction to ambient (1) L = 10 mm 1. Rth(j-a) is measured with a copper area S = S cm Table 5. Symbol 2 DO-41 45 SMA 30 SMB 25 DO-41 70 Unit °C/W °C/W (see Figure 14). Static electrical characteristics Parameter IR Reverse leakage current VF Forward voltage drop Test conditions Tj = 25° C Tj = 150° C Tj = 25° C Tj = 150° C Min. Typ Max. Unit 1 VR = VRRM µA 10 75 1.7 IF = 1 A V 1.0 1.25 To evaluate the conduction losses use the following equation: P = 1.03 x IF(AV) + 0.27 IF2(RMS) Table 6. Symbol Dynamic characteristics Parameter Test conditions Min. Typ. IF = 0.5 A Irr = 0.25 A IR =1 A Unit 25 trr Reverse recovery time Tj = 25° C tfr Forward recovery time Tj = 25° C dIF/dt = 100 A/µs IF = 1 A VFR = 1.1 x VFmax 100 ns Forward recovery voltage Tj = 25° C IF = 1 A dIF/dt = 100 A/µs VFR = 1.1 x VFmax 10 V VFP 2/9 Max. IF = 1 A dIF/dt = -50 A/µs VR =30 V ns 30 45 STTH1R06 Characteristics Figure 1. Conduction losses versus average Figure 2. forward current IFM(A) P(W) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1.8 δ = 0.2 δ = 0.1 1.6 δ = 0.5 δ = 0.05 1.4 1.2 δ=1 1.0 0.8 0.6 T 0.4 0.2 IF(AV)(A) δ=tp/T tp 0.0 0.0 Forward voltage drop versus forward current 0.2 Figure 3. 0.4 0.6 0.8 1.0 Tj=125°C (maximum values) Tj=25°C (maximum values) Tj=125°C (typical values) VFM(V) 1.2 0 1 Relative variation of thermal Figure 4. impedance junction to case versus pulse duration (DO-41) Zth(j-c)/Rth(j-c) 2 3 4 5 Relative variation of thermal impedance junction to case versus pulse duration (SMA) Zth(j-c)/Rth(j-c) 1.0 1.0 0.9 0.9 0.8 0.8 S = 1cm2 0.7 0.6 0.7 0.6 δ = 0.5 0.5 0.5 0.4 0.4 0.3 0.2 0.3 δ = 0.2 T δ = 0.1 0.1 Single pulse tp(s) 0.0 1.E+00 Figure 5. 1.E+01 0.1 δ=tp/T δ=tp/T tp(s) Single pulse tp tp 0.0 1.E+02 1.E+03 1.E-01 1.E+00 Relative variation of thermal Figure 6. impedance junction to case versus pulse duration (SMB) Zth(j-c)/Rth(j-c) 1.E+01 1.E+02 1.E+03 Peak reverse recovery current versus dIF/dt (typical values) IRM(A) 9 1.0 S = 1cm2 0.9 8 0.8 7 VR=400V Tj=125°C IF=2 x IF(AV) IF=IF(AV) 0.7 0.6 T δ = 0.2 0.2 δ = 0.1 1.E-01 δ = 0.5 6 δ = 0.5 IF=0.5 x IF(AV) 5 0.5 4 IF=0.25 x IF(AV) 0.4 3 0.3 T δ = 0.2 0.2 0.1 2 δ = 0.1 tp(s) Single pulse δ=tp/T tp 1.E-01 1 dIF/dt(A/µs) 0 0.0 1.E+00 1.E+01 1.E+02 1.E+03 0 50 100 150 200 250 300 350 400 450 500 3/9 Characteristics Figure 7. STTH1R06 Reverse recovery time versus dIF/dt Figure 8. (typical values) Reverse recovery charges versus dIF/dt (typical values) Qrr(nC) trr(ns) 250 140 VR=400V Tj=125°C 130 120 VR=400V Tj=125°C 225 IF=2 x IF(AV) IF=2 x IF(AV) 200 110 100 175 IF=IF(AV) 90 IF=0.5 x IF(AV) 80 150 IF=IF(AV) 125 70 60 100 IF=0.5 x IF(AV) 50 40 75 30 50 20 10 25 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 Figure 9. 100 150 200 250 300 350 400 450 Reverse recovery softness factor versus dIF/dt (typical values) S factor 50 100 150 200 250 300 350 400 450 500 Figure 10. Relative variations of dynamic parameters versus junction temperature 1.0 6 S factor 0.9 IF=IF(AV) VR=400V Tj=125°C 5 0 500 0.8 IRM 0.7 4 0.6 0.5 QRR 3 0.4 0.3 2 0.2 1 0.1 dIF/dt(A/µs) 0.0 0 0 50 100 150 200 250 300 IF=IF(AV) VR=400V Reference: Tj=125°C Tj(°C) 350 400 450 500 Figure 11. Transient peak forward voltage versus dIF/dt (typical values) 25 50 75 100 125 Figure 12. Forward recovery time versus dIF/dt (typical values) tfr(ns) VFP(V) 200 25 IF=IF(AV) Tj=125°C IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 180 160 20 140 120 15 100 80 10 60 40 5 dIF/dt(A/µs) 20 0 4/9 dIF/dt(A/µs) 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 STTH1R06 Characteristics Figure 13. Junction capacitance versus reverse voltage applied (typical values) Figure 14. Thermal resistance junction to ambient versus copper surface under each lead (epoxy FR4, copper thickness = 35 µm) (DO-41, SMB) C(pF) Rth(j-a)(°C/W) 110 100 F=1MHz VOSC=30mV Tj=25°C 100 90 DO-41 Lleads = 10mm 80 70 SMB 60 10 50 40 30 20 10 VR(V) S(cm²) 0 1 1 10 100 1000 0 1 2 3 4 5 6 7 8 9 10 Figure 15. Thermal resistance junction to ambient versus copper surface under each lead (epoxy FR4, copper thickness = 35 µm) (SMA) Rth(j-a)(°C/W) 140 130 120 110 100 90 80 SMA 70 60 50 40 30 20 S(cm²) 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5/9 Package information 2 STTH1R06 Package information ● Epoxy meets UL94, V0 Table 7. SMA dimensions Dimensions Ref. Millimeters Inches E1 D E A1 A2 C L Min. Max. Min. Max. A1 1.90 2.45 0.075 0.094 A2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.40 0.006 0.016 D 2.25 2.90 0.089 0.114 E 4.80 5.35 0.189 0.211 E1 3.95 4.60 0.156 0.181 L 0.75 1.50 0.030 0.059 b Figure 16. Footprint, dimensions in mm (inches) 1.4 2.63 1.4 (0.055) (0.103) (0.055) 1.64 (0.064) 5.43 (0.214) 6/9 STTH1R06 Package information Table 8. SMB dimensions Dimensions Ref. Millimeters Inches E1 D E A1 A2 C L b Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.40 0.006 0.016 D 3.30 3.95 0.130 0.156 E 5.10 5.60 0.201 0.220 E1 4.05 4.60 0.159 0.181 L 0.75 1.50 0.030 0.059 Figure 17. Footprint, dimensions in mm (inches) 1.62 2.60 (0.064) (0.102) 1.62 (0.064) 2.18 (0.086) 5.84 (0.300) Table 9. DO-41 (glass) dimensions Dimensions Ref. A C Inches Min. Max. Min. Max. A 4.07 5.20 0.160 0.205 B 2.04 2.71 0.080 0.107 C 28 D 0.712 ØD ØB C Millimeters 1.102 0.863 0.028 0.034 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 7/9 Ordering information 3 Ordering information Table 10. 4 STTH1R06 Ordering information Part number Marking Package Weight Base qty Delivery mode STTH1R06 STTH1R06 DO-41 0.34 g 2000 Ammopack STTH1R06RL STTH1R06 DO-41 0.34 g 5000 Tape and reel STTH1R06A HR6 SMA 0.068 g 5000 Tape and reel STTH1R06U BR6 SMB 0.11 g 2500 Tape and reel Revision history Table 11. Revision history Date Revision Apr-2003 1 First issue 07-Sep-2004 2 DO-41 and SMA packages added 24-Feb-2005 3 SMA package dimensions update. Reference A1 max. changed from 2.70 mm (0.106 inches) to 2.03 mm (0.080 inches). 4 Reformatted to current standards. Added cathode bars to cover illustrations. Updated dimensions and footprint illustrations for SMA and SMB packages. Corrected part number in Table 10. 02-Jul-2007 8/9 Description of changes STTH1R06 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9