STMICROELECTRONICS STTH1R06

STTH1R06
Turbo 2 ultrafast high voltage rectifier
Table 1.
Main product characteristics
IF (AV)
1A
VRRM
600 V
IR (max)
75 µA
Tj
175° C
VF (typ)
1.0 V
trr (max)
25 ns
A
A
K
K
DO-41
STTH1R06
Features and benefits
A
■
Ultrafast switching
■
Low reverse recovery current
■
Low thermal resistance
■
Reduces switching and conduction losses
K
SMB
STTH1R06U
Table 2.
Description
The STTH1R06, which uses ST Turbo 2 600 V
technology, is especially suited as a boost diode
in power factor correction circuitry.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
Table 3.
Order codes
Part number
Marking
STTH1R06
STTH1R06
STTH1R06RL
STTH1R06
STTH1R06A
HR6
STTH1R06U
BR6
Absolute ratings (limiting values)
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
IF(RMS)
RMS forward voltage
IF(AV)
Average forward current
Surge non repetitive forward current
Tstg
Storage temperature range
July 2007
Value
Unit
600
V
DO-41
10
SMA / SMB
7
A
DO-41
Tc = 100° C
δ = 0.5
SMA
Tc = 125° C
δ = 0.5
SMB
Tc = 135° C
δ = 0.5
DO-41
IFSM
Tj
SMA
STTH1R06A
1
25
tp = 10ms sinusoidal
SMA / SMB
Maximum operating junction temperature
Rev 4
A
A
20
-65 to + 175
°C
175
°C
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9
Characteristics
STTH1R06
1
Characteristics
Table 4.
Thermal resistance
Symbol
Parameter
Value (max)
L = 10 mm
Rth(j-l)
Rth(j-a)
Junction to lead
Junction to ambient (1)
L = 10 mm
1. Rth(j-a) is measured with a copper area S = S cm
Table 5.
Symbol
2
DO-41
45
SMA
30
SMB
25
DO-41
70
Unit
°C/W
°C/W
(see Figure 14).
Static electrical characteristics
Parameter
IR
Reverse leakage current
VF
Forward voltage drop
Test conditions
Tj = 25° C
Tj = 150° C
Tj = 25° C
Tj = 150° C
Min.
Typ
Max.
Unit
1
VR = VRRM
µA
10
75
1.7
IF = 1 A
V
1.0
1.25
To evaluate the conduction losses use the following equation:
P = 1.03 x IF(AV) + 0.27 IF2(RMS)
Table 6.
Symbol
Dynamic characteristics
Parameter
Test conditions
Min.
Typ.
IF = 0.5 A Irr = 0.25 A IR =1 A
Unit
25
trr
Reverse recovery time Tj = 25° C
tfr
Forward recovery time
Tj = 25° C
dIF/dt = 100 A/µs
IF = 1 A
VFR = 1.1 x VFmax
100
ns
Forward recovery
voltage
Tj = 25° C
IF = 1 A dIF/dt = 100 A/µs
VFR = 1.1 x VFmax
10
V
VFP
2/9
Max.
IF = 1 A dIF/dt = -50 A/µs
VR =30 V
ns
30
45
STTH1R06
Characteristics
Figure 1.
Conduction losses versus average Figure 2.
forward current
IFM(A)
P(W)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
1.8
δ = 0.2
δ = 0.1
1.6
δ = 0.5
δ = 0.05
1.4
1.2
δ=1
1.0
0.8
0.6
T
0.4
0.2
IF(AV)(A)
δ=tp/T
tp
0.0
0.0
Forward voltage drop versus
forward current
0.2
Figure 3.
0.4
0.6
0.8
1.0
Tj=125°C
(maximum values)
Tj=25°C
(maximum values)
Tj=125°C
(typical values)
VFM(V)
1.2
0
1
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration (DO-41)
Zth(j-c)/Rth(j-c)
2
3
4
5
Relative variation of thermal
impedance junction to case versus
pulse duration (SMA)
Zth(j-c)/Rth(j-c)
1.0
1.0
0.9
0.9
0.8
0.8
S = 1cm2
0.7
0.6
0.7
0.6
δ = 0.5
0.5
0.5
0.4
0.4
0.3
0.2
0.3
δ = 0.2
T
δ = 0.1
0.1
Single pulse
tp(s)
0.0
1.E+00
Figure 5.
1.E+01
0.1
δ=tp/T
δ=tp/T
tp(s)
Single pulse
tp
tp
0.0
1.E+02
1.E+03
1.E-01
1.E+00
Relative variation of thermal
Figure 6.
impedance junction to case versus
pulse duration (SMB)
Zth(j-c)/Rth(j-c)
1.E+01
1.E+02
1.E+03
Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
9
1.0
S = 1cm2
0.9
8
0.8
7
VR=400V
Tj=125°C
IF=2 x IF(AV)
IF=IF(AV)
0.7
0.6
T
δ = 0.2
0.2
δ = 0.1
1.E-01
δ = 0.5
6
δ = 0.5
IF=0.5 x IF(AV)
5
0.5
4
IF=0.25 x IF(AV)
0.4
3
0.3
T
δ = 0.2
0.2
0.1
2
δ = 0.1
tp(s)
Single pulse
δ=tp/T
tp
1.E-01
1
dIF/dt(A/µs)
0
0.0
1.E+00
1.E+01
1.E+02
1.E+03
0
50
100
150
200
250
300
350
400
450
500
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Characteristics
Figure 7.
STTH1R06
Reverse recovery time versus dIF/dt Figure 8.
(typical values)
Reverse recovery charges versus
dIF/dt (typical values)
Qrr(nC)
trr(ns)
250
140
VR=400V
Tj=125°C
130
120
VR=400V
Tj=125°C
225
IF=2 x IF(AV)
IF=2 x IF(AV)
200
110
100
175
IF=IF(AV)
90
IF=0.5 x IF(AV)
80
150
IF=IF(AV)
125
70
60
100
IF=0.5 x IF(AV)
50
40
75
30
50
20
10
25
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
0
50
Figure 9.
100
150
200
250
300
350
400
450
Reverse recovery softness factor
versus dIF/dt (typical values)
S factor
50
100
150
200
250
300
350
400
450
500
Figure 10. Relative variations of dynamic
parameters versus junction
temperature
1.0
6
S factor
0.9
IF=IF(AV)
VR=400V
Tj=125°C
5
0
500
0.8
IRM
0.7
4
0.6
0.5
QRR
3
0.4
0.3
2
0.2
1
0.1
dIF/dt(A/µs)
0.0
0
0
50
100
150
200
250
300
IF=IF(AV)
VR=400V
Reference: Tj=125°C
Tj(°C)
350
400
450
500
Figure 11. Transient peak forward voltage
versus dIF/dt (typical values)
25
50
75
100
125
Figure 12. Forward recovery time versus dIF/dt
(typical values)
tfr(ns)
VFP(V)
200
25
IF=IF(AV)
Tj=125°C
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
180
160
20
140
120
15
100
80
10
60
40
5
dIF/dt(A/µs)
20
0
4/9
dIF/dt(A/µs)
0
0
20
40
60
80
100
120
140
160
180
200
0
20
40
60
80
100
120
140
160
180
200
STTH1R06
Characteristics
Figure 13. Junction capacitance versus
reverse voltage applied (typical
values)
Figure 14. Thermal resistance junction to
ambient versus copper surface
under each lead (epoxy FR4,
copper thickness = 35 µm)
(DO-41, SMB)
C(pF)
Rth(j-a)(°C/W)
110
100
F=1MHz
VOSC=30mV
Tj=25°C
100
90
DO-41
Lleads = 10mm
80
70
SMB
60
10
50
40
30
20
10
VR(V)
S(cm²)
0
1
1
10
100
1000
0
1
2
3
4
5
6
7
8
9
10
Figure 15. Thermal resistance junction to
ambient versus copper surface
under each lead (epoxy FR4,
copper thickness = 35 µm) (SMA)
Rth(j-a)(°C/W)
140
130
120
110
100
90
80
SMA
70
60
50
40
30
20
S(cm²)
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
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Package information
2
STTH1R06
Package information
●
Epoxy meets UL94, V0
Table 7.
SMA dimensions
Dimensions
Ref.
Millimeters
Inches
E1
D
E
A1
A2
C
L
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.094
A2
0.05
0.20
0.002
0.008
b
1.25
1.65
0.049
0.065
c
0.15
0.40
0.006
0.016
D
2.25
2.90
0.089
0.114
E
4.80
5.35
0.189
0.211
E1
3.95
4.60
0.156
0.181
L
0.75
1.50
0.030
0.059
b
Figure 16. Footprint, dimensions in mm (inches)
1.4
2.63
1.4
(0.055)
(0.103)
(0.055)
1.64
(0.064)
5.43
(0.214)
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STTH1R06
Package information
Table 8.
SMB dimensions
Dimensions
Ref.
Millimeters
Inches
E1
D
E
A1
A2
C
L
b
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.096
A2
0.05
0.20
0.002
0.008
b
1.95
2.20
0.077
0.087
c
0.15
0.40
0.006
0.016
D
3.30
3.95
0.130
0.156
E
5.10
5.60
0.201
0.220
E1
4.05
4.60
0.159
0.181
L
0.75
1.50
0.030
0.059
Figure 17. Footprint, dimensions in mm (inches)
1.62
2.60
(0.064) (0.102)
1.62
(0.064)
2.18
(0.086)
5.84
(0.300)
Table 9.
DO-41 (glass) dimensions
Dimensions
Ref.
A
C
Inches
Min.
Max.
Min.
Max.
A
4.07
5.20
0.160
0.205
B
2.04
2.71
0.080
0.107
C
28
D
0.712
ØD ØB
C
Millimeters
1.102
0.863
0.028
0.034
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
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Ordering information
3
Ordering information
Table 10.
4
STTH1R06
Ordering information
Part number
Marking
Package
Weight
Base qty
Delivery mode
STTH1R06
STTH1R06
DO-41
0.34 g
2000
Ammopack
STTH1R06RL
STTH1R06
DO-41
0.34 g
5000
Tape and reel
STTH1R06A
HR6
SMA
0.068 g
5000
Tape and reel
STTH1R06U
BR6
SMB
0.11 g
2500
Tape and reel
Revision history
Table 11.
Revision history
Date
Revision
Apr-2003
1
First issue
07-Sep-2004
2
DO-41 and SMA packages added
24-Feb-2005
3
SMA package dimensions update. Reference A1 max.
changed from 2.70 mm (0.106 inches) to 2.03 mm
(0.080 inches).
4
Reformatted to current standards. Added cathode bars to
cover illustrations. Updated dimensions and footprint
illustrations for SMA and SMB packages. Corrected part
number in Table 10.
02-Jul-2007
8/9
Description of changes
STTH1R06
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