STMICROELECTRONICS STTH2006

STTH2006
Turbo 2 ultrafast high voltage rectifier
Main product characteristics
IF(AV)
20 A
VRRM
600 V
Tj
175° C
VF (typ)
1.0 V
trr (max)
50 ns
A
K
Features and benefits
DO-247
STTH2006W
■
Ultrafast switching
■
Low reverse current
■
Low thermal resistance
■
Reduces switching and conduction losses
Description
Order Codes
The STTH2006 uses ST Turbo 2 600 V
technology and is especially suited for use in
switching power supplies, and industrial
applications, such as rectification and continuous
mode PFC boost diode.
Table 1.
Part Number
Marking
STTH2006W
STTH2006W
Absolute Ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS)
RMS forward voltage
50
A
IF(AV)
Average forward current
Tc = 120° C
δ = 0.5
20
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
160
A
Tstg
Storage temperature range
-65 to + 175
°C
175
°C
Tj
July 2006
Maximum operating junction temperature
Rev 1
1/7
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7
Characteristics
1
STTH2006
Characteristics
Table 2.
Thermal resistance
Symbol
Rth(j-c)
s
Table 3.
Symbol
Parameter
Value
(max).
Unit
1.1
°C/W
Junction to case
Static electrical characteristic
Parameter
Test conditions
Tj = 25° C
IR (1)
Reverse leakage
current
VF (2)
Forward voltage drop
Tj = 150° C
Tj = 25° C
Tj = 150° C
Min.
Typ
Max.
Unit
25
VR = VRRM
µA
80
800
1.75
IF = 20 A
V
1.00
1.35
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.13 x IF(AV) + 0.011 IF2(RMS)
Table 4.
Symbol
2/7
Dynamic characteristics
Parameter
Test conditions
Min. Typ Max. Unit
IF = 0.5 A Irr = 0.25 A IR =1 A
trr
Reverse recovery
time
Tj = 25° C
IRM
Reverse recovery
current
VR = 400 V
I = 30 A
Tj = 125° C F
dIF/dt = -100 A/µs
tfr
Forward recovery
time
Tj = 25 °C
IF = 30 A
dIF/dt = 100 A/µs
VFR = 1.1 x VFmax
VFP
Forward recovery
voltage
Tj = 25° C
IF = 30 A dIF/dt = 100 A/µs
VFR = 1.1 x VFmax
IF = 1 A dIF/dt = -50 A/µs
VR =30 V
50
ns
50
70
8
11
A
500
ns
2.5
V
STTH2006
Characteristics
Figure 1.
Conduction losses versus
average forward current
Figure 2.
P(W)
IFM(A)
200
35
30
δ=0.05
δ=0.1
180
δ=0.5
δ=0.2
Forward voltage drop versus
forward current
δ=1
160
25
Tj=150 °C
(Maximum values)
140
120
20
Tj=150 °C
(Typical values)
100
15
80
Tj=25 °C
(Maximum values)
60
10
T
40
5
δ=tp/T
IF(AV)(A)
20
tp
VFM(V)
0
0
0
5
Figure 3.
10
15
20
25
Relative variation of thermal
impedance junction to case
versus pulse duration
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
Figure 4.
Zth(j-c)/Rth(j-c)
Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
30
1.0
VR=400V
Tj=125°C
0.9
IF=2 x IF(AV)
25
0.8
IF=IF(AV)
IF=0.5 x IF(AV)
0.7
20
IF=0.25 x IF(AV)
0.6
15
0.5
0.4
0.3
10
Single pulse
0.2
5
0.1
tp(s)
dIF/dt(A/µs)
0
0.0
1.E-03
Figure 5.
1.E-02
1.E-01
0
1.E+00
Reverse recovery time versus
dIF/dt (typical values)
50
Figure 6.
trr(ns)
100
150
200
250
300
350
400
450
500
Reverse recovery charges versus
dIF/dt (typical values)
Qrr(µC)
200
3.0
VR=400V
Tj=125°C
VR=400V
Tj=125°C
150
2.5
IF=2 x IF(AV)
IF=IF(AV)
IF=0.5 x IF(AV)
IF=2 x IF(AV)
2.0
IF=IF(AV)
1.5
100
IF=0.5 x IF(AV)
1.0
50
0.5
dIF/dt(A/µs)
dIF/dt(A/µs)
0.0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
3/7
Characteristics
Figure 7.
STTH2006
Softness factor versus dIF/dt
(typical values)
Figure 8.
S factor
Relative variations of dynamic
parameters versus junction
temperature
2.50
0.6
IF≤2 x IF(AV)
VR=400V
Tj=125°C
0.5
IF=IF(AV)
VR=400V
Reference: Tj=125°C
2.25
2.00
S factor
1.75
0.4
1.50
1.25
0.3
1.00
0.75
0.2
IRM
0.50
0.1
25
0
50
Figure 9.
100
150
200
250
300
Tj(°C)
0.00
0.0
350
400
450
50
75
100
125
500
Transient peak forward voltage
versus dIF/dt (typical values)
Figure 10. Forward recovery time versus dIF/dt
(typical values)
tfr(ns)
VFP(V)
800
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
IF=IF(AV)
Tj=125°C
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
700
600
500
400
300
200
100
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
100
200
300
400
500
Figure 11. Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
VR(V)
10
1
4/7
QRR
0.25
dIF/dt(A/µs)
10
100
1000
0
100
200
300
400
500
STTH2006
2
Package information
Package information
●
Epoxy meets UL94, V0
●
Cooling method: by conduction (C)
●
Recommended torque value: 0.55 Nm
●
Maximum torque value: 0.70 Nm
Table 5.
DO-247 Package dimensions
Dimensions
Ref.
Millimeters
Min.
V
Typ.
Inches
Max.
Min.
Typ.
Max.
A
4.85
5.15
0.191
0.203
D
2.20
2.60
0.086
0.102
E
0.40
0.80
0.015
0.031
F
1.00
1.40
0.039
0.055
Dia.
V
F2
2.00
0.078
A
H
F3
2.00
G
L5
2.40
0.078
10.90
0.094
0.429
H
15.45
15.75 0.608
0.620
L
19.85
20.15 0.781
0.793
L1
3.70
4.30
0.169
L
L2 L4
F2
L3
0.145
L1
F3
L2
D
V2
L3
18.50
14.20
0.728
14.80 0.559
0.582
F
G
M
E
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00
0.078
0.118
V
5°
5°
V2
60°
60°
Dia.
3.55
3.65
0.139
0.143
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
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Ordering information
3
4
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STTH2006
Ordering information
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STTH2006W
STTH2006W
DO-247
4.40 g
30
Tube
Revision history
Date
Revision
13-Jul-2006
1
Changes
Initial release.
STTH2006
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