STTH2006 Turbo 2 ultrafast high voltage rectifier Main product characteristics IF(AV) 20 A VRRM 600 V Tj 175° C VF (typ) 1.0 V trr (max) 50 ns A K Features and benefits DO-247 STTH2006W ■ Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces switching and conduction losses Description Order Codes The STTH2006 uses ST Turbo 2 600 V technology and is especially suited for use in switching power supplies, and industrial applications, such as rectification and continuous mode PFC boost diode. Table 1. Part Number Marking STTH2006W STTH2006W Absolute Ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) RMS forward voltage 50 A IF(AV) Average forward current Tc = 120° C δ = 0.5 20 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 160 A Tstg Storage temperature range -65 to + 175 °C 175 °C Tj July 2006 Maximum operating junction temperature Rev 1 1/7 www.st.com 7 Characteristics 1 STTH2006 Characteristics Table 2. Thermal resistance Symbol Rth(j-c) s Table 3. Symbol Parameter Value (max). Unit 1.1 °C/W Junction to case Static electrical characteristic Parameter Test conditions Tj = 25° C IR (1) Reverse leakage current VF (2) Forward voltage drop Tj = 150° C Tj = 25° C Tj = 150° C Min. Typ Max. Unit 25 VR = VRRM µA 80 800 1.75 IF = 20 A V 1.00 1.35 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 1.13 x IF(AV) + 0.011 IF2(RMS) Table 4. Symbol 2/7 Dynamic characteristics Parameter Test conditions Min. Typ Max. Unit IF = 0.5 A Irr = 0.25 A IR =1 A trr Reverse recovery time Tj = 25° C IRM Reverse recovery current VR = 400 V I = 30 A Tj = 125° C F dIF/dt = -100 A/µs tfr Forward recovery time Tj = 25 °C IF = 30 A dIF/dt = 100 A/µs VFR = 1.1 x VFmax VFP Forward recovery voltage Tj = 25° C IF = 30 A dIF/dt = 100 A/µs VFR = 1.1 x VFmax IF = 1 A dIF/dt = -50 A/µs VR =30 V 50 ns 50 70 8 11 A 500 ns 2.5 V STTH2006 Characteristics Figure 1. Conduction losses versus average forward current Figure 2. P(W) IFM(A) 200 35 30 δ=0.05 δ=0.1 180 δ=0.5 δ=0.2 Forward voltage drop versus forward current δ=1 160 25 Tj=150 °C (Maximum values) 140 120 20 Tj=150 °C (Typical values) 100 15 80 Tj=25 °C (Maximum values) 60 10 T 40 5 δ=tp/T IF(AV)(A) 20 tp VFM(V) 0 0 0 5 Figure 3. 10 15 20 25 Relative variation of thermal impedance junction to case versus pulse duration 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 Figure 4. Zth(j-c)/Rth(j-c) Peak reverse recovery current versus dIF/dt (typical values) IRM(A) 30 1.0 VR=400V Tj=125°C 0.9 IF=2 x IF(AV) 25 0.8 IF=IF(AV) IF=0.5 x IF(AV) 0.7 20 IF=0.25 x IF(AV) 0.6 15 0.5 0.4 0.3 10 Single pulse 0.2 5 0.1 tp(s) dIF/dt(A/µs) 0 0.0 1.E-03 Figure 5. 1.E-02 1.E-01 0 1.E+00 Reverse recovery time versus dIF/dt (typical values) 50 Figure 6. trr(ns) 100 150 200 250 300 350 400 450 500 Reverse recovery charges versus dIF/dt (typical values) Qrr(µC) 200 3.0 VR=400V Tj=125°C VR=400V Tj=125°C 150 2.5 IF=2 x IF(AV) IF=IF(AV) IF=0.5 x IF(AV) IF=2 x IF(AV) 2.0 IF=IF(AV) 1.5 100 IF=0.5 x IF(AV) 1.0 50 0.5 dIF/dt(A/µs) dIF/dt(A/µs) 0.0 0 0 200 400 600 800 1000 0 200 400 600 800 1000 3/7 Characteristics Figure 7. STTH2006 Softness factor versus dIF/dt (typical values) Figure 8. S factor Relative variations of dynamic parameters versus junction temperature 2.50 0.6 IF≤2 x IF(AV) VR=400V Tj=125°C 0.5 IF=IF(AV) VR=400V Reference: Tj=125°C 2.25 2.00 S factor 1.75 0.4 1.50 1.25 0.3 1.00 0.75 0.2 IRM 0.50 0.1 25 0 50 Figure 9. 100 150 200 250 300 Tj(°C) 0.00 0.0 350 400 450 50 75 100 125 500 Transient peak forward voltage versus dIF/dt (typical values) Figure 10. Forward recovery time versus dIF/dt (typical values) tfr(ns) VFP(V) 800 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 IF=IF(AV) Tj=125°C IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 700 600 500 400 300 200 100 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 100 200 300 400 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C 100 VR(V) 10 1 4/7 QRR 0.25 dIF/dt(A/µs) 10 100 1000 0 100 200 300 400 500 STTH2006 2 Package information Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.55 Nm ● Maximum torque value: 0.70 Nm Table 5. DO-247 Package dimensions Dimensions Ref. Millimeters Min. V Typ. Inches Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 Dia. V F2 2.00 0.078 A H F3 2.00 G L5 2.40 0.078 10.90 0.094 0.429 H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.169 L L2 L4 F2 L3 0.145 L1 F3 L2 D V2 L3 18.50 14.20 0.728 14.80 0.559 0.582 F G M E L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5° 5° V2 60° 60° Dia. 3.55 3.65 0.139 0.143 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information 3 4 6/7 STTH2006 Ordering information Ordering type Marking Package Weight Base qty Delivery mode STTH2006W STTH2006W DO-247 4.40 g 30 Tube Revision history Date Revision 13-Jul-2006 1 Changes Initial release. STTH2006 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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