STP16NK60Z - STB16NK60Z-S STW16NK60Z N-CHANNEL 600V - 0.38 Ω - 14 A TO-220 /I2SPAK/TO-247 Zener - Protecdet SuperMESH™ MOSFET TARGET SPECIFICATION Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STP16NK60Z STB16NK60Z-S STW16NK60Z 600 V 600 V 600 V < 0.42 Ω < 0.42 Ω < 0.42 Ω 14 A 14 A 14 A 190 W 190 W 190 W ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 12 3 1 2 I2SPAK TO-220 3 2 1 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STP16NK60Z P16NK60Z TO-220 TUBE STB16NK60Z-S B16NK60Z I2SPAK TUBE STW16NK60Z W16NK60Z TO-247 TUBE Rev. 1 September 2005 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. 1/10 STP16NK65Z - STB16NK65Z-S - STW16NK60Z Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 14 A ID Drain Current (continuous) at TC = 100°C 8.8 A IDM ( ) Drain Current (pulsed) 56 A PTOT Total Dissipation at TC = 25°C 190 W Derating Factor 1.51 W/°C Gate source ESD (HBM-C= 100pF, R= 1.5KΩ) 6000 V VESD(G-S) ) Pulse width limited by safe operating area (1) ISD ≤ 14 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 4: Thermal Data TO-220/ I²SPAK Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl TO-247 0.66 62.5 50 Maximum Lead Temperature For Soldering Purpose 300 Table 5: Avalanche Characteristics Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 14 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 360 mJ Table 6: GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Min. Igs=± 1mA (Open Drain) 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/10 STP16NK60Z - STB16NK60Z-S - STW16NK60Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On/Off Symbol V(BR)DSS Parameter Test Conditions Min. Typ. Max. ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100 µA 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 7 A 0.38 0.42 Ω Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 V(BR)DSS 600 Unit Drain-source Breakdown Voltage 3 V 600 V Table 8: Dynamic Symbol gfs (1) Ciss Coss Crss Coss eq. (*) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS = 15 V, ID = 7 A VDS = 25V, f = 1 MHz, VGS = 0 Typ. Max. Unit 12 S 2650 285 62 pF pF pF Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 158 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 480 V, ID = 14 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 30 25 70 15 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 14 A, VGS = 10V 86 17 46 nC nC nC (*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 9: Source Drain Diode Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 14 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 14 A, di/dt = 100 A/µs VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) 490 5.4 22 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 14 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 585 7 24 ns µC A trr Qrr IRRM trr Qrr IRRM ISD ISDM (2) Test Conditions Source-drain Current Source-drain Current (pulsed) Min. Typ. Max. Unit 14 56 A A 1.6 V 14 56 A A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/10 STP16NK65Z - STB16NK65Z-S - STW16NK60Z Figure 3: Unclamped Inductive Load Test Circuit Figure 6: Unclamped Inductive Wafeform Figure 4: Switching Times Test Circuit For Resistive Load Figure 7: Gate Charge Test Circuit Figure 5: Test Circuit For Inductive Load Switching and Diode Recovery Times 4/10 STP16NK60Z - STB16NK60Z-S - STW16NK60Z In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 5/10 STP16NK65Z - STB16NK65Z-S - STW16NK60Z TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 6/10 TYP 5.50 0.216 STP16NK60Z - STB16NK60Z-S - STW16NK60Z TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 7/10 STP16NK65Z - STB16NK65Z-S - STW16NK60Z I2SPAK MECHANICAL DATA DIM. A 8/10 mm. MIN. 4.40 TYP inch MAX. MIN. 4.60 0.173 TYP. MAX. 0.181 A1 2.49 2.69 0.098 0.106 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.018 0.024 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.394 0.409 G 4.88 5.28 0.192 0.208 L 16.7 17.5 0.657 0.689 L2 1.27 1.4 0.05 0.055 L3 13.82 14.42 0.544 0.568 STP16NK60Z - STB16NK60Z-S - STW16NK60Z Table 10: Revision History Date Revision 06-Jul-2004 06-Sep-2005 1 2 Description of Changes First Release. Inserted Ecopak indication 9/10 STP16NK65Z - STB16NK65Z-S - STW16NK60Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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