STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247™ MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 ■ ■ ■ VDSS RDS(on) ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 2 3 1 Max247™ INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SWITCHING SPEED ■ SWITCH MODE POWER SUPPLY (SMPS) ABSOLUTE MAXIMUM RATINGS Symbol VDS Parameter Drain-source Voltage (VGS = 0) Unit 100 V Drain-gate Voltage (RGS = 20 kΩ) 100 V Gate- source Voltage ± 20 V ID Drain Current (continuos) at TC = 25°C 140 A ID Drain Current (continuos) at TC = 100°C 99 A VDGR VGS IDM(•) Ptot Drain Current (pulsed) 560 A Total Dissipation at TC = 25°C 450 W 3 W/°C Derating Factor EAS(1) dv/dt (2) Tstg Tj Single Pulse Avalanche Energy 2900 mJ 5 V/ns Storage Temperature -55 to 175 °C Operating Junction Temperature -55 to 175 °C Peak Diode Recovery voltage slope (•) Pulse width limited by safe operating area. August 2001 . Value (1) Starting T j = 25 oC, ID = 70A, VDD= 50V (2) ISD ≤140A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX. 1/8 STY140NS10 THERMAL DATA Rthj-case Rthj-amb Tj Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.33 30 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V Min. Typ. Max. 100 Unit V 1 10 µA µA ±100 nA Max. Unit 4 V 0.009 0.011 Ω Typ. Max. Unit ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 250 µA Min. Typ. 2 ID = 70 A DYNAMIC Symbol 2/8 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 20 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 70 A Min. 50 S 12600 2100 690 pF pF pF STY140NS10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 70 A VDD = 50 V RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 1) 40 150 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=50V ID=140A VGS=10V (see test circuit, Figure 2) 450 70 170 600 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 70 A VDD = 50 V RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 1) 465 270 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 140 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 140 A Vr = 20 V Tj = 150°C (Inductive Load, Figure 3) trr Qrr IRRM Test Conditions VGS = 0 Min. Typ. Max. Unit 140 560 A A 1.5 V 275 2 15 ns µC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STY140NS10 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STY140NS10 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . . 5/8 STY140NS10 Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit STY140NS10 Max247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 MIN. TYP. MAX. P025Q 7/8 STY140NS10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2001 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. 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