STY16NA90 N - CHANNEL 900V - 0.5 Ω - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET PRELIMINARY DATA TYPE STY16NA90 ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 900 V < 0.54 Ω 16 A TYPICAL RDS(on) = 0.5 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD Max247TM DESCRIPTION TM T he Max247 package is a new high volume power package exibiting the same footprint as the industry standard TO -247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO -264. The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V DS Drain-source Voltage (V GS = 0) 900 V VDGR Drain- gate Voltage (R GS = 20 kΩ) 900 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at T c = 25 o C 16 A ID Drain Current (continuous) at T c = 100 o C 10 A Drain Current (pulsed) 64 A I DM (•) P t ot T stg Tj o Total Dissipation at Tc = 25 C 300 W Derating Factor 2.4 W/ C St orage Temperature Max. Operating Junction Temperature o -55 to 150 o C 150 o C (•) Pulse width limited by safe operating area June 1998 1/5 STY16NA90 THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-Heatsink with Conductive Grease Max Max Typ o 0.42 40 0.05 o C/W C/W AVALANCHE CHARACTERISTICS Symb ol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) E AS Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = IAR , VDD = 50 V) Max Valu e Unit 16 A 3000 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µA V GS = 0 V DS = Max Rating Zero G ate Voltage Drain Current (VGS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) Min. Typ . Max. 900 Un it V o Tc = 125 C V GS = ± 30 V 50 500 µA µA ± 100 nA ON (∗) Symb ol Parameter Test Cond ition s ID = 250 µA V GS(th) Gate Threshold Voltage R DS( on) Static Drain-source On V GS = 10 V Resistance ID(o n) V DS = VGS Min. Typ . Max. Un it 2.25 3 3.75 V 0.5 0.54 Ω Ω ID = 8 A 16 On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V A DYNAMIC Symb ol g fs (∗) C iss C oss C rss 2/5 Parameter Test Cond ition s Forward Transconductance V DS > I D(on) x R DS(on) max Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz ID = 8 A VGS = 0 Min. Typ . Max. 15 Un it S 6400 600 150 8300 750 200 pF pF pF STY16NA90 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Parameter Test Cond ition s t d(on) tr Turn-on Time Rise Time V DD = 450 V R G = 4.7 Ω Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 720 V Min. I D = 16 A Typ . Max. 30 30 ID = 8 A V GS = 10 V V GS = 10 V Un it ns ns 245 25 110 320 nC nC nC Typ . Max. Un it 80 25 115 105 35 150 ns ns ns Typ . Max. Un it 16 64 A A 2 V SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s V DD = 720 V R G = 4.7 Ω Min. I D = 16 A V GS = 10 V SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 16 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 16 A V DD = 100 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs o Tj = 150 C 1100 ns 25.3 µC 46 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STY16NA90 Max247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 MIN. TYP. MAX. P025Q 4/5 STY16NA90 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. 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