PNP Silicon Switching Transistor SXT 3906 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 5 Collector current IC 200 mA Total power dissipation, TS = 100 ˚C Ptot 1 W Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient2) Rth JA ≤ 120 Junction - soldering point Rth JS ≤ 50 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SXT 3906 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA V(BR)CE0 40 – – Collector-base breakdown voltage IC = 10 µA V(BR)CB0 40 – – Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 5 – – Collector-base cutoff current VCB = 30 V ICB0 – – 50 Collector-emitter cutoff current VCE = 30 V, VBE = – 3 V ICEV – – 50 DC current gain IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V hFE Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VCEsat Base-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat 1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 V nA – 60 80 100 60 30 – – – – – – – 300 – – – – – – 0.25 0.4 0.65 – – – 0.85 0.95 V SXT 3906 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz fT 250 – – MHz Output capacitance VCB = 5 V, f = 1 MHz Cobo – – 4.5 pF Input capacitance VEB = 0.5 V, f = 1 MHz Cibo – – 10 Input impedance ICE = 1 mA, VCE = 10 V, f = 1 kHz hie 2 – 12 kΩ Voltage feedback ratio IC = 1 mA, VCE = 10 V, f = 1 kHz hre 0.1 – 10 10– 4 Small-signal current gain IC = 1 mA, VCE = 10 V, f = 1 kHz hfe 100 – 400 – Output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz hoe 3 – 60 µS Noise figure IC = 0.1 mA, VCE = 5 V, f = 10 Hz to 15 kHz RS = 1 kΩ NF – – 4 dB Switching times VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA td tr – – – – 35 35 ns ns VCC = 3 V, IC = 10 mA, IB1 = 1 mA ts tf – – – – 225 75 ns ns Semiconductor Group 3 SXT 3906 Test circuits Delay and rise time Storage and fall time Semiconductor Group 4 SXT 3906 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Saturation voltage IC = f (VBE sat, VCE sat) Permissible pulse load Ptot max/Ptot DC = f (tp) Open-circuit reverse voltage transfer ratio h12e = f (IC) Semiconductor Group 5 SXT 3906 Small-signal current gain hfe = f (IC) VCE = 10 V, f = 1 MHz Output admittance h22e = f (IC) VCE = 10 V, f = 1 MHz Delay time td = f (IC) Rise time tr = f (IC) Fall time tf = f (IC) Semiconductor Group 6 SXT 3906 DC current gain hFE = f (IC) VCE = 1 V, normalized Semiconductor Group 7