STMICROELECTRONICS T1235H-600G

T1235H
®
12A TRIACS
SNUBBERLESS™ HIGH TEMPERATURE
Table 1: Main Features
A2
Symbol
Value
Unit
IT(RMS)
12
A
VDRM/VRRM
600
V
IGT (Q1)
35
mA
G
A1
A2
A2
A1 A2
DESCRIPTION
Specifically designed for use in high temperature
environment (found in hot appliances such as
cookers, ovens, hobs, electric heaters, coffee machines...), the new 12 Amps T1235H triacs provide
an enhanced performance in terms of power loss
and thermal dissipation. This allows for optimization of the heatsinking dimensioning, leading to
space and cost effectivness when compared to
electro-mechnical solutions.
Based on ST snubberless technology, they offer
high commutation switching capabilities and high
noise immunity levels. And, thanks to their clip assembly technique, they provide a superior performance in surge current handling.
A1
A2
G
G
D2PAK
(T1235H-600G)
Table 2: Order Codes
Part Number
T1235H-600G
T1235H-600G-TR
T1235H-600TRG
TO-220AB
(T1235H-600T)
Marking
T1235H600G
T1235H600G
T1235H600T
Table 3: Absolute Maximum Ratings
Symbol
IT(RMS)
ITSM
I²t
dI/dt
Parameter
PG(AV)
Tstg
Tj
February 2006
Unit
A
RMS on-state current (full sine wave)
Tc = 135°C
12
Non repetitive surge peak on-state F = 50 Hz
current (full cycle, Tj initial = 25°C) F = 60 Hz
t = 20 ms
140
t = 16.7 ms
145
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state
current IG = 2 x IGT , tr ≤ 100 ns
F = 120 Hz
VDSM/VRSM Non repetitive surge peak off-state tp = 10 ms
voltage
IGM
Value
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
REV. 6
A
112
A²s
Tj = 150°C
50
A/µs
Tj = 25°C
700
V
Tj = 150°C
4
A
Tj = 150°C
1
W
- 40 to + 150
- 40 to + 150
°C
1/8
T1235H
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
IGT (1)
VGT
Test Conditions
VD = 12 V RL = 33 Ω
VGD
VD = VDRM RL = 3.3 kΩ
IH (2)
IT = 100 mA
IL
IG = 1.2 IGT
dV/dt (2)
Quadrant
Tj = 150°C
MAX.
35
mA
I - II - III
MAX.
1.3
V
I - II - III
MIN.
0.15
V
MAX.
35
mA
II
(dI/dt)c (2) Without snubber
Unit
I - II - III
I - III
VD = 67 %VDRM gate open
Value
Tj = 150°C
Tj = 150°C
MAX.
50
80
mA
MIN.
300
V/µs
MIN.
5.3
A/ms
Value
Unit
Table 5: Static Characteristics
Symbol
Test Conditions
VT (2)
ITM = 17 A
Vto (2)
Rd (2)
IDRM
IRRM
tp = 380 µs
Tj = 25°C
MAX.
1.55
V
Threshold voltage
Tj = 150°C
MAX.
0.80
V
Dynamic resistance
Tj = 150°C
MAX.
25
mΩ
5
µA
Tj = 25°C
VDRM = VRRM
Tj = 150°C
VDRM/VRRM = 400V
(at mains peak voltage)
Tj = 150°C
MAX.
5.5
mA
3.5
Note 1: minimum IGT is guaranted at 10% of IGT max.
Note 2: for both polarities of A2 referenced to A1.
Table 6: Thermal resistance
Symbol
Rth(j-c)
Rth(j-a)
Parameter
Unit
1.2
°C/W
TO-220AB
Junction to ambient
S = Copper surface under tab.
2/8
D2PAK
Junction to case (AC)
Value
S = 1 cm²
D2PAK
45
TO-220AB
60
°C/W
T1235H
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
Figure 2: RMS on-state current versus case
temperature (full cycle)
P(W)
IT(RMS)(A)
14
14
12
12
10
10
8
8
6
6
4
4
2
2
TC(°C)
IT(RMS)(A)
0
0
0
2
4
6
8
10
0
12
Figure 3: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm) (full cycle)
25
50
75
100
125
150
Figure 4: Relative variation of thermal
impedance versus pulse duration
IT(RMS)(A)
K=[Zth/Rth]
5
1.00
2
D PAK
(S=1cm2)
Zth(j-c)
4
3
Zth(j-a)
0.10
2
1
tp(s)
TC(°C)
0.01
0
0
25
50
75
100
125
1E-3
150
Figure 5: On-state characteristics (maximum
values)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Figure 6: Surge peak on-state current versus
number of cycles
ITM(A)
ITSM(A)
200
150
Tj max.
Vto = 0.85V
Rd = 50 mΩ
100
Tj = Tj max.
125
t=20ms
100
One cycle
Non repetitive
Tj initial=25°C
75
Tj = 25°C.
10
Repetitive
TC=135°C
50
25
Number of cycles
VTM(V)
0
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
1000
3/8
T1235H
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
and corresponding value of I2t
2
Figure 8: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2
ITSM(A), I t (A s)
2.5
2000
Tj initial=25°C
dI/dt limitation:
50A/µs
2.0
1000
IGT
1.5
IH & IL
1.0
ITSM
0.5
tp(ms)
Tj(°C)
I2t
0.0
100
0.01
0.10
1.00
-40
10.00
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
-20
0
20
40
60
80
100
120
140
160
Figure 10: Relative variation of critical rate of
decrease of main current versus junction
temperature
(dI/dt)c [Tj] / (dI/dt)c [Tj = 150°C]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
8
6.0
7
5.0
6
4.0
5
4
3.0
3
2.0
2
1.0
1
(dV/dt)c (V/µs)
0.0
Tj(°C)
0
0.1
1.0
10.0
100.0
Figure 11: Leakage current versus junction
temperature for different values of blocking
voltage (typical values)
25
50
75
100
125
150
Figure 12: Acceptable repetitive peak off-state
voltage versus case-ambient thermal resistance
VDRM / VRRM (V)
IDRM / IRRM (mA)
700
1E+1
600
1E+0
Tj = 150°C
Rth(j-c) = 1.2°C/W
500
VD = VR = 600V
400
VD = VR = 400V
1E-1
300
VD = VR = 200V
200
1E-2
100
Tj(°C)
1E-3
50
4/8
Rth(c-a)(°C/W)
0
75
100
125
150
0
2
4
6
8
10
12
14
16
18
20
T1235H
Figure 13: D2PAK Thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm)
Rth(j-a)(°C/W)
80
D2PAK
70
60
50
40
30
20
10
S(cm²)
0
0
4
8
12
16
20
24
28
32
36
40
Figure 14: Ordering Information Scheme
T 12 35 H - 600 G (-TR)
Triac series
Current
12 = 12A
Sensitivity
35 = 35mA
Temperature
H = High
Voltage
600 = 600V
Package
G = D2PAK
T = TO-220AB
Packing mode
Blanck = D2PAK in Tube
RG = TO-220AB in Tube
-TR = Tape & Reel
Table 7: Product Selector
Part Numbers
Voltage
Sensitivity
Type
Package
T1235H-600G
600 V
35 mA
Snubberless
D2PAK
T1235H-600T
600 V
35 mA
Snubberless
TO-220AB
5/8
T1235H
Figure 15: D2PAK Package Mechanical Data
REF.
A
E
C2
L2
D
L
L3
A1
B2
R
C
B
G
A2
2.0 MIN.
FLAT ZONE
V2
Figure 16: D2PAK Foot Print Dimensions
(in millimeters)
16.90
10.30
5.08
1.30
3.70
8.90
6/8
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
R
V2
DIMENSIONS
Millimeters
Inches
Min. Typ. Max. Min. Typ.
4.30
4.60 0.169
2.49
2.69 0.098
0.03
0.23 0.001
0.70
0.93 0.027
1.25 1.40
0.048 0.055
0.45
0.60 0.017
1.21
1.36 0.047
8.95
9.35 0.352
10.00
10.28 0.393
4.88
5.28 0.192
15.00
15.85 0.590
1.27
1.40 0.050
1.40
1.75 0.055
0.40
0.016
0°
8°
0°
Max.
0.181
0.106
0.009
0.037
0.024
0.054
0.368
0.405
0.208
0.624
0.055
0.069
8°
T1235H
Figure 17: TO-220AB and TO-220AB Insulated Package Mechanical Data
B
C
REF.
b2
L
F
I
A
l4
c2
a1
l3
l2
a2
b1
M
c1
e
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
I4
L
l2
l3
M
DIMENSIONS
Millimeters
Inches
Min. Typ. Max. Min. Typ.
15.20
15.90 0.598
3.75
0.147
13.00
14.00 0.511
10.00
10.40 0.393
0.61
0.88 0.024
1.23
1.32 0.048
4.40
4.60 0.173
0.49
0.70 0.019
2.40
2.72 0.094
2.40
2.70 0.094
6.20
6.60 0.244
3.75
3.85 0.147
15.80 16.40 16.80 0.622 0.646
2.65
2.95 0.104
1.14
1.70 0.044
1.14
1.70 0.044
2.60
0.102
Max.
0.625
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
0.661
0.116
0.066
0.066
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com.
Table 8: Ordering Information
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
T1235H-600TRG
T1235H600T
TO-220AB
2.3 g
50
Tube
T1235H-600G
T1235H600G
Tube
T1235H600G
1.5 g
50
T1235H-600G-TR
D2PAK
1000
Tape & reel
Table 9: Revision History
Date
Revision
Apr-2002
5A
13-Feb-2006
6
Description of Changes
Last update.
TO-220AB delivery mode changed from bulk to tube.
ECOPACK statement added.
7/8
T1235H
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2006 STMicroelectronics - All rights reserved
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