Features • No External Components Except PIN Diode • Supply-voltage Range: 4.5V to 5.5V • Highest Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong Signal Adaption (ATC) • Highest Immunity Against Disturbances from Daylight and Lamps • Available for Carrier Frequencies between 30 kHz to 76 kHz; Adjusted by Zener Diode Fusing • TTL and CMOS Compatible • Suitable Minimum Burst Length ≥ 10 Pulses/Burst Applications • Home Entertainment Applications (Audio/Video) • Home Appliances • Remote Control Equipment IR Receiver ASSP T2525 1. Description The IC T2525 is a complete IR receiver for data communication that was developed and optimized for use in carrier-frequency-modulated transmission applications. The IC offers highest sensitivity as well as highest suppression of noise from daylight and lamps. The T2525 is available with broadest range of carrier frequencies (30, 33, 36, 37, 38, 40, 44, 56, 76 kHz) and 5 different noise suppression regulation types (standard, lamp, noise, short burst, data rate) covering requirements of high-end remote control solutions (please refer to selection guide available for T2525/ATA2526). The T2525 operates in a supply voltage range of 4.5V to 5.5V. The function of T2525 can be described using the block diagram (see Figure 1-1 on page 2). The input stage meets two main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a Controlled Gain Amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental condition (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality. 4657F–AUTO–10/06 Figure 1-1. Block Diagram VS IN OUT CGA and filter Input Demodulator Microcontroller AGC/ATC and digital control Oscillator Carrier frequency f0 T2525 Modulated IR signal min 6 or 10 pulses GND 2. Pin Configuration Figure 2-1. Pinning SO8 and TSSOP8 VS NC OUT NC Table 2-1. Pin Description Pin Symbol 1 VS Supply voltage 2 NC Not connected 3 OUT 4 NC 2 1 2 3 4 8 7 6 5 NC NC GND IN Function Data output Not connected 5 IN 6 GND Input PIN diode 7 NC Not connected 8 NC Not connected Ground T2525 4657F–AUTO–10/06 T2525 3. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Supply voltage VS –0.3 to +6 V Supply current IS 3 mA Input voltage VIN –0.3 to VS V Input DC current at VS = 5V IIN 0.75 mA Output voltage VO –0.3 to VS V IO 10 mA Operating temperature Tamb –25 to +85 °C Storage temperature Tstg –40 to +125 °C Power dissipation at Tamb = 25°C Ptot 30 mW Symbol Value Unit Junction ambient SO8 RthJA 130 K/W Junction ambient TSSOP8 RthJA TBD K/W Output current 4. Thermal Resistance Parameter 3 4657F–AUTO–10/06 5. Electrical Characteristics Tamb = 25°C, VS = 5V unless otherwise specified. No. 1 Parameters 1.1 Supply-voltage range 1.2 Supply current 2 Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 1 VS 4.5 5 5.5 V C 1 IS 0.8 1.1 1.4 mA B kΩ A 250 mV B Vs V B mA B µA C –960 µA B Supply IIN = 0 Output 2.1 Internal pull-up resistor(1) Tamb = 25°C; see Figure 6-7 on page 8 1,3 RPU 2.2 Output voltage low IL = 2 mA; see Figure 6-7 on page 8 3,6 VOL 2.3 Output voltage high 3,1 VOH 2.4 Output current clamping R2 = 0; see Figure 6-7 on page 8 3,6 IOCL 3 30/40 VS – 0.25 8 Input 3.1 Input DC current VIN = 0; see Figure 6-7 on page 8 5 IIN_DCMAX –85 3.2 Input DC current; Figure 6-2 on page 6 VIN = 0; Vs = 5V, Tamb = 25°C 5 IIN_DCMAX –530 3.3 Minimum detection threshold current; Figure 6-1 on page 6 Test signal: see Figure 6-6 on page 8 VS = 5V, Tamb = 25°C, IIN_DC = 1 µA; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 6-6 on page 8; BER = 50(2) 3 IEemin –500 pA B 3.4 Test signal: see Figure 6-6 on page 8 VS = 5V, Minimum detection Tamb = 25°C, threshold current with = 1 µA, I AC current disturbance IN_DC square pp, IIN_AC100 = 3 µA at burst N = 16, 100 Hz f = f0; tPER = 10 ms, Figure 6-6 on page 8; BER = 50%(2) 3 IEemin –750 pA C *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see “Ordering Information” 2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage 4 T2525 4657F–AUTO–10/06 T2525 5. Electrical Characteristics (Continued) Tamb = 25°C, VS = 5V unless otherwise specified. No. 3.5 4 Parameters Test Conditions Maximum detection threshold current with VIN > 0V Test signal: see Figure 6-6 on page 8 VS = 5 V, Tamb = 25°C, IIN_DC = 1 µA; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 6-6 on page 8; BER = 5%(2) Pin Symbol Min. 3 IEemax –400 Typ. Max. Unit Type* µA D Controlled Amplifier and Filter 4.1 Maximum value of variable gain (CGA) GVARMAX 51 dB D 4.2 Minimum value of variable gain (CGA) GVARMIN -5 dB D 4.3 Total internal amplification(3) GMAX 71 dB D 4.4 Center frequency fusing VS = 5V, Tamb = 25°C accuracy of bandpass 4.5 Overall accuracy center frequency of bandpass 4.6 f0_FUSE –3 f0 +3 % A f0 –6.7 f0 +4.1 % C BPF bandwidth: type N0 - N3 –3 dB; f0 = 38 kHz; see Figure 6-4 on page 7 B 3.5 kHz C BPF bandwidth: type N6, N7 –3 dB; f0 = 38 kHz Figure 6-4 on page 7 B 5.4 kHz C *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see “Ordering Information” 2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage 5.1 ESD All pins ⇒2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7 5.2 Reliability Electrical qualification (1000h) in molded SO8 plastic package 5 4657F–AUTO–10/06 6. Typical Electrical Curves at Tamb = 25°C Figure 6-1. IEemin versus IIN_DC, VS = 5V IEemin (nA) 100 10 0.96 1 0.52 0 0.1 1.0 10.0 100.0 1000.0 IIN_DC (µA) Figure 6-2. VIN versus IIN_DC, VS = 5V 3 2.94 2.79 2.44 VIN (V) 2 1 1.14 0 0.0 0.1 1.0 10.0 100.0 1000.0 IIN_DC (µA) Figure 6-3. Data Transmission Rate, VS = 5V 5000 4634 Short burst type Bits/s 4000 Standard type 3415 3000 2836 Lamp type 2000 2090 1863 1373 1000 0 25 35 45 55 65 75 85 f0 (kHz) 6 T2525 4657F–AUTO–10/06 T2525 Figure 6-4. Typical Bandpass Curve 1.1 Relative Amplitude 1.0 0.9 0.8 -3 dB -3 dB 0.7 0.6 0.5 ∆f 0.4 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 f/f0 Q = f0/∆f; ∆f = -3 dB values. Example: Q = 1/(1.047 – 0.954) = 11 Figure 6-5. Illustration of Used Terms 1066 µs Period (P = 16) Burst (N = 16 pulses) 533 µs IN 1 7 16 7 7 33 µs OUT t DON t DOFF 533 µs Envelope 16 Envelope 1 17056 µs/data word OUT Telegram pause Data word Data word t 17 ms TREP = 62 ms Example: f = 30 kHz, burst with 16 pulses, 16 periods 7 4657F–AUTO–10/06 Figure 6-6. Test Circuit IEe = ∆U1/400 kΩ V DD = 5V ∆U1 400 kΩ 1 nF IIN_DC R1 = 220Ω VS IIN 20 kΩ IEe IN T2525 1 nF VPULSE OUT GND ∆U2 C1 IIN_DC = ∆U2/40 kΩ 20 kΩ f0 + 4.7 µF 16 - IIN_AC100 DC + tPER = 10 ms Figure 6-7. Application Circuit (1) VDD = 5V optional R2(1) > 2.4 kΩ R1 = 220Ω RPU IS VS IN IIN T2525 IOCL IL OUT Microcontroller GND + IIN_DC 8 IEe C1 = 4.7 µF VIN VO C 2(1) = 470 pF T2525 4657F–AUTO–10/06 T2525 7. Chip Dimensions Figure 7-1. Chip Size in µm 1130,1030 GND IN 351,904 723,885 scribe length VS 63,660 63,70 T2525 Fusing OUT 0,0 width Note: Pad coordinates are for lower left corner of the pad in µm from the origin 0,0 Dimensions Pad metallurgy Finish Note: Length inclusive scribe 1.15 mm Width inclusive scribe 1.29 mm Thickness 290µ ± 5% Pads 90µ × 90µ Fusing pads 70µ × 70µ Material AlCu/AlSiTi(1) Thickness 0.8 µm Material Si3N4/SiO2 Thickness 0.7/0.3 µm Value depends on manufacture location. 9 4657F–AUTO–10/06 8. Ordering Information Delivering: unsawn wafers (DDW) in box. PL(2) RPU(3) D(4) 2 30 2090 Standard type: ≥ 10 pulses, enhanced sensibility, high data rate T2525N1xx -DDW 1 30 2090 Standard type: ≥ 10 pulses, enhanced sensibility, high data rate T2525N2xx(1)-DDW 2 40 1373 Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure data transmission T2525N3xx(1)-DDW 1 40 1373 Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure data transmission T2525N6xx(1)-DDW 2 30 3415 Short burst type: ≥ 6 pulses, enhanced data rate 1 30 3415 Short burst type: ≥ 6 pulses, enhanced data rate Extended Type Number T2525N0xx(1)-DDW (1) (1) T2525N7xx -DDW Notes: Type(5) 1. xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44, 56 kHz. (76 kHz type on request) 2. Two pad layout versions (see Figure 9-1 and Figure 9-2) available for different assembly demand 3. Integrated pull-up resistor at pin OUT (see “Electrical Characteristics”) 4. Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5V (see Figure 6-3 on page 6) 5. On request: noise type, data rate type 9. Pad Layout Figure 9-1. Pad Layout 1 GND IN OUT T2525 VS Figure 9-2. Fusing Pad Layout 2 (6) GND (5) IN (1) VS T2525 (3) 10 OUT Fusing T2525 4657F–AUTO–10/06 T2525 10. Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. History 4657F-AUTO-10/06 • • • • 4657E-AUTO-04/06 Features on page 1 changed Applications on page 1 changed Section 1 “Description” on page 1 changed Section 5 “Electrical Characteristics” number 3.3 and 3.4 on page 4 changed • Section 8 “Ordering Information” on page 10 changed • Section 9 “Pad Layout” on page 10 changed • Put datasheet in a new template • Section 8 “Ordering Information” on page 10 changed 11 4657F–AUTO–10/06 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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