TOSHIBA TA2131FN

TA2131FN
TOSHIBA Bipolar Linear IC Silicon Monolithic
TA2131FN
Low Current Consumption Headphone Amplifier for Portable MD Player (With Bass Boost
Function)
The TA2131FN is a low current consumption headphone
amplifier developed for portable digital audio. It is particularly
well suited to portable MD players that are driven by a single dry
cell. It also features a built-in bass boost function with AGC, and
is capable of bass amplification of DAC output and analog signals
such as tuner.
Features
·
Low current consumption: ICCQ (VCC1) = 0.55 mA (typ.)
ICCQ (VCC2) = 0.20 mA (typ.)
·
Output power: Po = 8 mW (typ.)
·
Low noise: Vno = −102dBV (typ.)
·
Built-in low-pass boost (with AGC)
·
I/O pin for beep sound
·
Outstanding ripple rejection ratio
·
Built-in power mute
·
Built-in power ON/OFF switch
·
Operating supply voltage range (Ta = 25°C): VCC1 = 1.8~4.5 V
Weight: 0.14 g (typ.)
(VCC1 = 2.8 V, VCC2 = 1.2 V, f = 1 kHz, THD = 10%, RL = 16 Ω)
VCC2 = 0.9~4.5 V
1
2002-04-19
TA2131FN
Block Diagram
Vref
VCC1
BEEP
Vref
OFF
24
Vref
IN
Vref
LPF1
23
22
BST
BEEP
GND IN
SW
21
20
19
18
MT
SW
PW
SW
17
MT
TC
16
BEEP BOOST MUTE
SW
SW
Vref
(2.8 V)
OFF ON OFF ON
ON
BST
NF1
DAC OUT
VCC1
VCC1
15
14
INB
13
Vref
PW
SW
BST1
BST2
LPF2
1
BST
NF2
2
BST
OUT
PW B
BST
AGC
3
AGC
IN
4
DET
5
OUTB
6
PWR
GND
RL
Vref
7
PW A
OUTA
8
VCC2
9
BEEP
OUTA
10
BEEP
OUTB
11
INA
12
Vref
RL
+B (1.2 V)
Vref
2
DAC OUT
2002-04-19
TA2131FN
Terminal Explanation (Terminal voltage: Typical terminal voltage at no signal with test
circuit, VCC1 = 2.8 V, VCC2 = 1.2 V, Ta = 25°C)
1
LPF2
Terminal
Explanation
BST amplifier 1
output
(filter terminal)
Terminal
Voltage
(V)
Internal Circuit
12
AGC
PWA
BST1
ADD
20 kW
23
LPF1
ADD amplifier output
(filter terminal)
13
0.61
PWB
30 kW
2 kW
23
0.61
BST2
AMP
12 kW
10 kW
20 kW
20 kW
Terminal No.
24
24
BST NF1
1
BST amplifier 1 NF
0.61
0.61
ADD
10 kW
10 kW
BST1
OUT
OUTB
BST2
Power amplifier
output
OUTA
3
0.61
15 kW
INA
6
Power amplifier
input
13
10 kW
INB
13
20 kW
12
10 kW
20 kW
8
15 kW
10 kW
6
BST OUT
8
20 kW
3
PWA
12
BST amplifier 2
output terminal
Vref
10 kW 10 kW
BST NF2
20 kW
2
BST amplifier 2 NF
terminal
(low-pass
compensation
condenser
connection terminal)
20 kW
Vref
0.61
PWB
2
3
2002-04-19
TA2131FN
Terminal No.
Terminal
Explanation
AGC IN
Signal input level to
BST amplifier is
varied according to
the input level to the
boost AGC input
terminal. Input
impedance: 15 kW
(typ.)
Terminal
Voltage
(V)
Internal Circuit
14
Vref
5 kW
4
0.61
4
10 kW
5.1 kW
14
5
DET
Smoothing of boost
AGC level detection
7
PWR GND
GND of power
amplifier output
stage
¾
0
9
VCC2
VCC (+B) at power
amplifier output
stage
¾
1.2
10
BEEP OUTA
Beep sound output
terminal
11
14
BEEP OUTB
19
19
BEEP IN
Beep sound input
terminal
Receives beep
sound signals from
microcomputer.
14
VCC1
Main VCC
¾
5
¾
10 kW
10
11
0
¾
2.8
14
MT TC
12 kW
15
Mute smoothing
Power mute switch
Reduces the shock
noise during
switching
1.2
15
4
2002-04-19
TA2131FN
Terminal No.
Terminal
Explanation
Terminal
Voltage
(V)
Internal Circuit
VCC1
14
16
PW SW
Power ON/OFF
switch
“H” level:
IC operation
“L” level: IC OFF
Refer to function
explanation 5
47 kW
16
¾
VCC1
14
17
MT SW
Mute switch
“L” level: mute reset
“H” level: mute ON
Refer to function
explanation 5
¾
47 kW
17
18
20
BST SW
14
Bass boost ON/OFF
switch
“H” level/OPEN:
BST ON
“L” level: BST OFF
Refer to function
explanation 5
GND
GND of input stage
in power amplifier
Vref IN
Reference voltage
circuit filter terminal
Vref
Reference voltage
circuit
20 kW
¾
¾
0
18
14
0.61
10 kW
4 kW
21
22
21
10 kW
22
0.61
5
2002-04-19
TA2131FN
Function Explanation
1. Bass Boost Function
1-1
Description of Operation
TA2131FN has a bass boost function for bass sound reproduction built-in to the power amplifier.
With the bass boost function, at medium levels and lower, channel A and channel B are added for the
low frequency component, and output to BST amplifier 2 (BST2) in negative phase. That signal is
inverted and added before being subjected to bass boost. If the signal of the low-frequency component
reaches a high level, the boost gain is controlled to main a low distortion (see Fig.1).
V (OUT)
20 kW
INA
10 kW PWB
V (NF1)
Vref
V (LPF2)
V (RL)
220 mF
16 W
RL
BST
NF2
8
1 mF
Vref
V (NF2)
4
OUTB
220 mF
16 W
RL
BST OUT
LPF2
7
0.1 mF
0.1 mF
9
Vref
Figure 1
1-2
20 kW
AGC
IN BST NF1
6
10
Vref
10 kW 15 kW
22 kW
2 kW
DET
5
11
0.1 mF
LPF1
10 kW
BST
AGC
10 kW
30 kW
5 kW
4.7 mF
20 kW
INB
21
V (LPF1)
10 kW 15 kW
BST2
2
10 kW
BST1
20 kW
10 mF
PWA
12 kW
Vref
DAC
OUT
10 kW
20 kW
10 kW
ADD
10 kW
0.1 mF
10 mF
OUTA
20 kW
22
V (BST OUT)
System Diagram of Bass Boost
AGC Circuit
The AGC circuit of the bass boost function detects with “AGC DET” the voltage component created
by “BST2,” and as the input level increases, the variable impedance circuit is changed, and the bass
boost signal is controlled so that it is not assigned to BST amplifier 1. In this way, the bass signal to
“BST2” input is shut-off, and that boost gain is controlled.
1-3
Bass Boost System
As shown in Fig.1, the flow of the bass boost signal is that the signal received from power amplifier
input goes through LPF1, ADD amplifier, ATT (variable impedance circuit), BPF1 (BST amplifier 1)
and LPF2, and the negative phase signal to the power amplifier input signal is output from BST
amplifier 2. The reason why it becomes the negative phase of the BST amplifier 2 signal is that the
phase is inverted by 180° in the audible bandwidth by the secondary characteristics of LPF1 and
LPF2 in Fig.1.
Ultimately the main signal and the bass boost signal formed before BST2 are added.
Fig.2 shows the frequency characteristics to each terminal.
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2002-04-19
TA2131FN
40
V (OUT)
(dB)
20
V (RL)
V (NF2)
V (BST OUT)
0
GV
V (LPF2)
V (NF1)
-20
-40
-60
1
V (LPF1)
10
100
f
Figure 2
2.
1k
10 k
100 k
(Hz)
During Bass Boost (Frequency Characteristics to Each Terminal)
Low-Pass Compensation
2-1.
Function
In C-couple type power amplifiers, it is necessary to give the output condenser C a large capacity to
flatten out the frequency characteristics to the low frequency band (this is because the loss in the low
frequency bandwidth becomes larger due to the effect of the high-pass filter comprising C and RL).
Particularly when the headphone load is approximately 16 W and an attempt is being made to achieve
frequency characteristics of ±3 dB at 20 Hz, a large capacity condenser of C = 470 mF is required.
Bearing this situation in mind, a low-pass compensation function was built in to the TA2131FN, and
while reducing the capacity of the output coupling condenser, almost flat (±3 dB) frequency
characteristics in all audible bandwidths (20 Hz to 20 kHz) have been achieved.
Fig.3 shows the low-pass system diagram, and Fig.4 shows the frequency characteristics at each point.
In Fig.4, (a) represents the status lost by the low-pass as a result of the high-pass filter comprising
the headphone load (RL = 16 W) and the output coupling condenser (220 mF) in the C-coupling system.
V (OUT)
20 kW
PWA
ADD
Vref
BST2
10 mF
10 kW
10 kW 15 kW
10 kW 15 kW
13
20 kW
INB
8
10 kW
10 kW
10 kW PWB
220 mF
16 W
RL
BST
NF2
2
10 kW
DAC
OUT
V (RL)
OUTA
20 kW
10 mF
20 kW
INA
12
6
OUTB
1 mF
Vref
220 mF
16 W
RL
20 kW
Figure 3
Low-Pass Compensation System Diagram
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2002-04-19
TA2131FN
20
(b)
(c)
0
GV
(dB)
10
(a)
-10
-20
1
10
f
Figure 4
1k
100
10 k
100 k
(Hz)
Power Amplifier Frequency Characteristics
<Principle of Low-Pass Compensation>
The low-pass component alone is extracted from the composite signal of PWA/PWB output, and that
frequency signal is fed back to PWA/PWB once more via the inversion amplifier, thereby making it
possible to increase the gain only of the low-pass component. The frequency characteristics of the
power amplifier output V (OUT) in this state are shown in Fig.4 (b). In practice they are the
frequency characteristics (c) viewed from load terminal V (RL), and the low-pass is compensated
relative to the state in (a).
2-2.
Low-Pass Compensation Condenser and Crosstalk
In this low-pass compensation condenser circuit, processing is carried out using the composite
signal of power amplifier output, so this affects crosstalk, according to the amount of compensation.
f characteristics and crosstalk generated by the capacity of the condenser for compensation (2-pin) are
shown below.
10
VCC1 = 2.8 V
VCC2 = 1.2 V
Response (dB)
Rg = 620 W
RL = 16 W
Filter: LPF 80 kHz
C = 0.47 mF
Output C = 220 mF
0
Vref short
C = 1 mF
C = 2.2 mF
-10
10
30
100
300
f
Figure 5
1k
3k
10 k
30 k
(Hz)
Condenser and f Characteristics for Low-Pass Compensation
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2002-04-19
TA2131FN
CT – f
VCC1 = 2.8 V
VCC2 = 1.2 V
Rg = 620 W
RL = 16 W
Vo = -22dBV
WIDE BAND
Output C = 220 mF
0
CT (dB)
C = 0.47 mF
-20
C = 1 mF
C = 2.2 mF
-40
-60
10
Vref short
30
100
300
1k
f
Figure 6
3.
3k
10 k
30 k 100 k
(Hz)
Low-Pass Compensation Condenser and Crosstalk
Beep
Beep sound signals from microcomputer can be received by the beep input terminal (19-pin).
The PWA and PWB of the power amplifier during power mute are turned OFF, and the beep signal input
from BEEP-IN (19-pin) is output from the BEEP-OUT terminal (10/11-pin) as fixed current, after passing
through the converter and current amplification stage. Connecting this terminal to the headphone load
outputs the beep sound.
If the beep sound is not input, fix the BEEP-IN (19-pin) terminal to GND level.
VCC
PW SW
(18-pin)
ON
OFF
OFF
MT SW
(17-pin)
OFF
ON
OFF
BEEP IN
(15-pin)
200 ms
100 ms
100 ms
20
IBEEP
23
15
IBEEP
24
ID
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2002-04-19
TA2131FN
4.
Power Switch
As long as the power switch is not connected to “H” level, the IC does not operate. If it malfunctions due
to external noise, however, it is recommended to connect a pull-down resistor externally (the power switch
is set to be highly sensitive).
5.
Threshold Voltages of Switches
(1)
PW SW
(2)
(V)
4.5 V
Terminal voltage V17, V18
Terminal voltage V16
(V)
4.5 V
4
H
3
2
1.6 V
1
4
3
H
2
1
0.8 V
0.6 V
L
0
MT SW, BST SW
5
5
1
2
0.3 V
3
Power supply voltage VCC
4
5
(V)
0
1
L
2
3
4
Power supply voltage VCC
PW SW (V16)
5
(V)
MT SW (V17)
“H” level
IC operation
“H” level
Mute ON
“L” level
IC OFF
“L” level
Mute reset
BST SW (V18)
6.
“H” level/OPEN
BST ON
“L” level
BST OFF
These capacitors which prevent oscillation of the power amplifier, and are between
the Vref and VCC-GND must have a small temperature coefficient and outstanding
frequency characteristics.
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2002-04-19
TA2131FN
Maximum Ratings
Characteristic
Symbol
Rating
Unit
Supply voltage
VCC
4.5
V
Output current
Io (peak)
100
mA
Power dissipation
PD (Note)
500
mW
Operating temperature
Topr
-25~75
°C
Storage temperature
Tstg
-55~150
°C
Note: Derated above Ta = 25°C in the proportion of 4 mW/°C.
Electrical Characteristics (Unless specified otherwise, VCC1 = 2.8 V, VCC2 = 1.2 V,
Rg = 600 W, RL = 16 W, f = 1 kHz, Ta = 25°C)
Characteristic
Quiescent supply current
Power supply current during
drive
Test condition
Min
Typ.
Max
Unit
ICC1
IC OFF (VCC1), SW1: b, SW2: b
¾
0.1
5
ICC2
IC OFF (VCC2), SW1: b, SW2: b
¾
0.1
5
ICC3
MUTE ON (VCC1), SW1: a, SW2: b
¾
0.35
0.50
mA
ICC4
MUTE ON (VCC2), SW1: a, SW2: b
¾
5
10
mA
ICC5
No signal (VCC1), SW1: a, SW2: a
¾
0.55
0.75
ICC6
No signal (VCC2), SW1: a, SW2: a
¾
0.20
0.40
ICC7
Po = 0.5 mW + 0.5 mW output (VCC1)
¾
0.6
¾
ICC8
Po = 0.5 mW + 0.5 mW output (VCC2)
¾
5.3
¾
Gain
GV
Vo = -22dBV
10
12
14
Channel balance
CB
Vo = -22dBV
-1.5
0
1.5
mA
mA
dB
Pomax
THD = 10%
5
8
¾
mW
Total harmonic distortion
THD
Po = 1 mW
¾
0.1
0.3
%
Output noise voltage
Vno
Rg = 600 W, Filter: IHF-A, SW4: b
¾
-102
-96
dBV
Crosstalk
CT
Vo = -22dBV
-42
-48
¾
RR1
fr = 100 Hz, Vr = -20dBV
inflow to VCC2
-71
-77
¾
RR2
fr = 100 Hz, Vr = -20dBV
inflow to VCC1
-54
-64
¾
ATT
Vo = -12dBV, SW2: a ® b
-90
-100
¾
VBEEP
V Beep IN = 2 Vp-o, SW2: b
-53
-48
-43
Output power
Power Section
Symbol
Ripple rejection ratio
Mute attenuation
Beep sound output
voltage
Boost gain
dB
BST1
Vo = -20dBV, f = 100 Hz,
SW3: ON ® OPEN
1
4
7
BST2
Vo = -30dBV, f = 100 Hz,
SW3: ON ® OPEN
10
13
16
BST3
Vo = -50dBV, f = 100 Hz,
SW3: ON ® OPEN
13.5
16.5
19.5
11
dBV
dB
2002-04-19
TA2131FN
Test Circuit
Vref
4.7 mF
4.7 mF
0.1 mF
10 mF
(a)
SW2
OFF
SW3
(b)
VCC1
(2.8 V)
(b)
(a)
(a)
SW4B
SW1
(b)
10 mF
VCC1
Vref
1 mF
Vref
600 W
Rg = 600 W
ON
24
23
22
21
20
BST
NF1
LPF1
Vref
Vref
IN
GND
19
BEEP
IN
18
BST
SW
17
16
15
14
13
MT SW PW SW MT TC
VCC1
INB
TA2131FN
AGC
IN
DET
OUTB
PWR
GND
OUTA
VCC2
BEEP
OUTA
BEEP
OUTB
INA
1
2
3
4
5
6
7
8
9
10
11
12
Vref
SW4A
(a)
(b)
600 W
16 W
(*)
16 W
(*)
220 mF
0.1 mF
22 kW
0.1 mF
10 mF
BST
OUT
220 mF
BST
NF2
0.1 mF
LPF2
+B (1.2 V)
Vref
Vref
(*) 0.22 mF + 10 W
Monolithic ceramic capacitor
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2002-04-19
TA2131FN
Application Circuit 1
100 kW
4.7 mF
10 mF
0.1 mF
OFF
DAC OUT
VCC1
(2.8 V)
10 mF
VCC1
BEEP
ON OFF
ON
1 mF
Vref
4.7 mF
Vref
0.1 mF
Vref
24
23
22
21
20
BST
NF1
LPF1
Vref
Vref
IN
GND
19
18
BEEP
IN
BST
SW
17
16
15
14
13
MT SW PW SW MT TC
VCC1
INB
TA2131FN
LPF2
BST
NF2
BST
OUT
AGC
IN
DET
OUTB
PWR
GND
OUTA
VCC2
BEEP
OUTA
BEEP
OUTB
INA
1
2
3
4
5
6
7
8
9
10
11
12
RL
Vref
10 mF
(*)
220 mF
(*)
220 mF
0.1 mF
0.1 mF
1 mF
0.1 mF
Vref
22 kW
RL
+B (1.2 V)
Vref
DAC OUT
(*) 0.22 mF + 10 W
Monolithic ceramic capacitor
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2002-04-19
TA2131FN
Application Circuit 2 (Low-Pass Compensation/Bass Boost Function/Beep Not Used)
(2.8 V)
ON OFF
1 mF
ON
4.7 mF
10 mF
OFF
DAC OUT
VCC1
10 mF
VCC1
Vref
Vref
24
23
22
21
20
BST
NF1
LPF1
Vref
Vref
IN
GND
19
18
BEEP
IN
BST
SW
17
16
15
14
13
MT SW PW SW MT TC
VCC1
INB
TA2131FN
LPF2
BST
NF2
BST
OUT
AGC
IN
DET
OUTB
PWR
GND
OUTA
VCC2
BEEP
OUTA
BEEP
OUTB
INA
1
2
3
4
5
6
7
8
9
10
11
12
RL
Vref
Vref
10 mF
(*)
220 mF
(*)
220 mF
Vref
RL
+B (1.2 V)
Vref
DAC OUT
(*) 0.22 mF + 10 W
Monolithic ceramic capacitor
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2002-04-19
TA2131FN
Characteristics
(Unless otherwise specified VCC1 = 2.8 V, VCC2 = 1.2 V, Rg = 600 W, f = 1 kHz, Ta = 25°C)
VDC – VCC2
1.0
0.8
0.8
0.6
Output voltage (V)
Quiescent supply current
ICC
(mA)
ICC – VCC2
1.0
ICC5
0.4
ICC6
0.2
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0
0.6
2.4
0.8
1.0
1.2
1.4
1.6
Supply voltage VCC2
MUTE ON
1.8
2.0
2.2
(V)
Po – VCC2
100
0.8
30
(mW)
1.0
ICC
(mA)
0.4
(V)
ICC – VCC2
10
Output volatage Po
Quiescent supply current
0.6
0.2
Supply voltage VCC2
0.6
0.4
ICC3
0.2
3
1
0.3
THD = 10 %
ICC4
0
0.6
0.8
1.0
1.2
1.4
1.6
A/Bch IN
1.8
Supply voltage VCC2
2.0
2.2
0.1
0.6
2.4
0.8
(V)
1.0
1.2
(dBV)
Vno
ICC8
Output noise voltage
ICC
Consumption supply current
2.0
2.2
2.4
(V)
IHF-A
3
1
ICC7
0.3
0.1
0.01
1.8
Vno – VCC2
A/Bch IN
10
1.6
-80
100
30
1.4
Supply voltage VCC2
ICC – Po
(mA)
(Vref, OUT)
0.03
0.1
0.3
1
Output voltage Po
3
10
-85
-90
-95
-100
-105
-110
-115
-120
0.6
30
(mW)
0.8
1.0
1.2
1.4
1.6
1.8
Supply voltage VCC2
15
2.0
2.2
2.4
(V)
2002-04-19
TA2131FN
THD – Po
R.R. – VCC2
10
inflow to VCC1
0
Ripple rejection ratio R.R. (dB)
Total harmonic distortion
THD
(%)
fr = 100 Hz
3
1
0.3
10 kHz
0.1
100 Hz/1 kHz
0.03
0.01
0.1
0.3
1
3
10
30
Output voltage Po
100
300
Vr = -20dBV
20
40
60
80
100
0.4
0.8
(mW)
1.2
R.R. – VCC
Ripple rejection ratio R.R. (dB)
(%)
THD
Total harmonic distortion
1
0.1
0.03
0.6
10 kHz
1 kHz
0.8
100 Hz
1.0
1.2
1.4
1.6
1.8
Supply voltage VCC2
2.0
2.2
Vr = -20dBV
-40
-60
-80
-100
0.4
2.4
(V)
0.8
1.2
(dBV)
-40
-20
Beep output voltage
(dBV)
Output voltage Vo
-10
-30
-40
-50
2.4
(V)
-50
-60
-70
-80
-90
-60
-100
-70
10
-110
0.1
1k
Frequency f
2.0
BEEP
-30
300
1.6
Supply voltage VCC2
Vo – f
100
inflow to VCC2
-20
0
30
(V)
fr = 100 Hz
3
0.3
2.4
0
RL = 16 W
Po = 1 mW
A/Bch IN
10
2.0
Supply voltage VCC2
THD – VCC2
30
1.6
3k
10 k
30 k
(Hz)
fBEEP = 400 Hz
Rectangle wave
0.3
0.5
Beep input voltage
16
1
3
VBEEP
5
10
(Vp-o) (V)
2002-04-19
TA2131FN
ICC – Ta
CT – f
0
1.0
(mA)
Vo = -22 dBV
Application circuit 1
30
40
(No use Low-Pass
Compensation)
50
Application circuit 2
60
70
10
0.8
ICC
20
Quiescent supply current
Cross talk
CT (dB)
10
30
100
300
1k
Frequency f
3k
10 k
0.4
ICC6
0.2
0
-50
30 k
(Hz)
ICC5
0.6
-25
0
25
50
75
100
Ambient temperature Ta (°C)
VDC – Ta
Output voltage VDC
(V)
1.0
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75
100
Ambient temperature Ta (°C)
17
2002-04-19
TA2131FN
Package Dimensions
Weight: 0.14 g (typ.)
18
2002-04-19
TA2131FN
RESTRICTIONS ON PRODUCT USE
000707EBA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2002-04-19