MICROCHIP TC1186

TC1054/TC1055/TC1186
50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown
and ERROR Output
Features
General Description
• Low Ground Current for Longer Battery Life
• Low Dropout Voltage
• Choice of 50 mA (TC1054), 100 mA (TC1055)
and 150 mA (TC1186) Output
• High Output Voltage Accuracy
• Standard or Custom Output Voltages:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 3.6V, 4.0V, 5.0V
• Power-Saving Shutdown Mode
• ERROR Output Can Be Used as a Low Battery
Detector or Microcontroller Reset Generator
• Overcurrent and Overtemperature Protection
• 5-Pin SOT-23 Package
• Pin Compatible Upgrades for Bipolar Regulators
The TC1054, TC1055 and TC1186 are high accuracy
(typically ±0.5%) CMOS upgrades for older (bipolar)
low dropout regulators. Designed specifically for
battery-operated systems, the devices’ CMOS
construction minimizes ground current, extending
battery life. Total supply current is typically 50 µA at full
load (20 to 60 times lower than in bipolar regulators).
Applications
•
•
•
•
•
•
•
Battery Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulators for SMPS
Pagers
The devices’ key features include low noise operation,
low dropout voltage – typically 85 mV (TC1054),
180 mV (TC1055) and 270 mV (TC1186) at full load —
and fast response to step changes in load. An error
output (ERROR) is asserted when the devices are outof-regulation (due to a low input voltage or excessive
output current). ERROR can be used as a low battery
warning or as a processor RESET signal (with the
addition of an external RC network). Supply current is
reduced to 0.5 µA (max), with both VOUT and ERROR
disabled when the shutdown input is low. The devices
incorporate both over-temperature and over-current
protection.
The TC1054, TC1055 and TC1186 are stable with an
output capacitor of only 1 µF and have a maximum
output current of 50 mA, 100 mA and 150 mA,
respectively. For higher output current regulators,
please refer to the TC1173 (IOUT = 300 mA) data sheet
(DS21632).
Typical Application
Package Type
5-Pin SOT-23
VIN
1
2
3
VIN
VOUT
5
+
TC1054
TC1055
TC1186
GND
SHDN
VOUT
1 µF
VOUT
ERROR
5
4
TC1054
TC1055
TC1186
1 MΩ
ERROR
4
ERROR
1
2
3
VIN
GND
SHDN
NOTE: 5-Pin SOT-23 is equivalent to the EIAJ (SC-74A)
Shutdown Control
(from Power Control Logic)
© 2007 Microchip Technology Inc.
DS21350D-page 1
TC1054/TC1055/TC1186
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Input Voltage ....................................................................6.5V
Output Voltage .....................................(-0.3V) to (VIN + 0.3V)
Power Dissipation ......................... Internally Limited (Note 6)
Maximum Voltage on Any Pin ...................VIN +0.3V to -0.3V
Operating Junction Temperature Range .. -40°C < TJ < 125°C
Storage Temperature.....................................-65°C to +150°C
† Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Input Operating Voltage
Maximum Output Current
Output Voltage
Sym
Min
VIN
IOUTMAX
VOUT
VOUT Temperature Coefficient
Typ
Max
2.7
—
6.0
V
Note 8
50
100
150
—
—
—
—
—
—
mA
TC1054
TC1055
TC1186
V
Note 1
VR – 2.5% VR ±0.5% VR + 2.5%
Units
Conditions
TCVOUT
—
—
20
40
—
—
Line Regulation
ΔVOUT/ΔVIN
—
0.05
0.35
%
(VR + 1V) ≤ VIN ≤ 6V
Load Regulation:
ΔVOUT/VOUT
—
—
0.5
0.5
2
3
%
(Note 3)
IL = 0.1 mA to IOUTMAX
IL = 0.1 mA to IOUTMAX
VIN-VOUT
—
—
—
—
—
2
65
85
180
270
—
—
120
250
400
mV
IL = 100 µA
IL = 20 mA
IL = 50 mA
IL = 100 mA
IL = 150 mA (Note 4)
IIN
—
50
80
µA
SHDN = VIH, IL = 0 µA (Note 9)
TC1054; TC1055
TC1186
Dropout Voltage:
TC1055; TC1186
TC1186
Supply Current
ppm/°C Note 2
Shutdown Supply Current
IINSD
—
0.05
0.5
µA
SHDN = 0V
Power Supply Rejection Ratio
PSRR
—
64
—
dB
f ≤ 1 kHz
Output Short Circuit Current
Thermal Regulation
Thermal Shutdown Die
Temperature
Thermal Shutdown Hysteresis
IOUTSC
—
300
450
mA
VOUT = 0V
ΔVOUT/ΔPD
—
0.04
—
V/W
Notes 5, 6
TSD
—
160
—
°C
ΔTSD
—
10
—
°C
Note 1: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
2: TC VOUT = (VOUTMAX – VOUTMIN)x 106
VOUT x ΔT
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal
value.
5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations”, “Thermal Considerations”, for more details.
7: Hysteresis voltage is referenced by VR.
8: The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX.
9: Apply for junction temperatures of -40C to +85C.
DS21350D-page 2
© 2007 Microchip Technology Inc.
TC1054/TC1055/TC1186
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
eN
—
260
—
SHDN Input High Threshold
VIH
45
—
—
%VIN
VIN = 2.5V to 6.5V
SHDN Input Low Threshold
VIL
—
—
15
%VIN
VIN = 2.5V to 6.5V
VINMIN
1.0
—
—
V
VOL
—
—
400
mV
ERROR Threshold Voltage
VTH
—
0.95 x VR
—
V
ERROR Positive Hysteresis
VHYS
—
50
—
mV
Note 7
VOUT to ERROR Delay
tDELAY
—
2.5
—
ms
VOUT falling from VR to VR - 10%
Output Noise
Units
Conditions
nV/√Hz IL = IOUTMAX
SHDN Input
ERROR Output
Minimum VIN Operating Voltage
Output Logic Low Voltage
1 mA Flows to ERROR
See Figure 4-2
Note 1: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
2: TC VOUT = (VOUTMAX – VOUTMIN)x 106
VOUT x ΔT
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal
value.
5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations”, “Thermal Considerations”, for more details.
7: Hysteresis voltage is referenced by VR.
8: The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX.
9: Apply for junction temperatures of -40C to +85C.
© 2007 Microchip Technology Inc.
DS21350D-page 3
TC1054/TC1055/TC1186
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.
0.020
0.100
ILOAD = 10 mA
0.090
DROPOUT VOLTAGE (V)
DROPOUT VOLTAGE (V)
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
CIN = 1 μF
COUT = 1 μF
0.002
0.060
0.050
0.040
0.030
0.020
CIN = 1 μF
COUT = 1 μF
0.000
-40
-20
0
20
50
TEMPERATURE (°C)
70
125
-40
ILOAD = 100 mA
DROPOUT VOLTAGE (V)
0.140
0.120
0.100
0.080
0.060
0.020
CIN = 1 μF
COUT = 1 μF
125
0.250
0.200
0.150
0.100
0.050
CIN = 1 μF
COUT = 1 μF
0.000
0.000
-40
-20
0
20
50
70
125
-40
-20
TEMPERATURE (°C)
FIGURE 2-2:
Dropout Voltage vs.
Temperature (ILOAD = 100 mA).
0
20
50
TEMPERATURE (°C)
70
125
FIGURE 2-5:
Dropout Voltage vs.
Temperature (ILOAD = 150 mA).
90
90
ILOAD = 10 mA
80
70
60
50
40
30
20
CIN = 1 μF
COUT = 1 μF
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
FIGURE 2-3:
(ILOAD = 10 mA).
DS21350D-page 4
Ground Current vs. VIN
ILOAD = 100 mA
80
GND CURRENT (μA)
GND CURRENT (μA)
70
ILOAD = 150 mA
0.160
0.040
0
20
50
TEMPERATURE (°C)
0.300
0.200
0.180
-20
FIGURE 2-4:
Dropout Voltage vs.
Temperature (ILOAD = 50 mA).
FIGURE 2-1:
Dropout Voltage vs.
Temperature (ILOAD = 10 mA).
DROPOUT VOLTAGE (V)
0.070
0.010
0.000
ILOAD = 50 mA
0.080
70
60
50
40
30
20
CIN = 1 μF
COUT = 1 μF
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
FIGURE 2-6:
(ILOAD = 100 mA).
Ground Current vs. VIN
© 2007 Microchip Technology Inc.
TC1054/TC1055/TC1186
Note: Unless otherwise indicated, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.
80
3.5
3
60
2.5
50
VOUT (V)
GND CURRENT (μA)
ILOAD = 0
ILOAD = 150 mA
70
40
30
2
1.5
1
20
CIN = 1 μF
COUT = 1 μF
10
0.5
0
0
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
FIGURE 2-7:
(ILOAD = 150 mA).
Ground Current vs. VIN
0.5 1 1.5
2 2.5 3 3.5
4 4.5 5
5.5 6 6.5 7
VIN (V)
FIGURE 2-10:
(ILOAD = 0 mA).
3.5
3.0
CIN = 1 μF
COUT = 1 μF
VOUT vs. VIN
3.320
ILOAD = 100 mA
ILOAD = 10 mA
3.315
3.310
3.305
VOUT (V)
VOUT (V)
2.5
2.0
1.5
3.300
3.295
3.290
1.0
CIN = 1 μF
COUT = 1 μF
VIN = 4.3V
3.285
0.5
CIN = 1 μF
COUT = 1 μF
0.0
0
3.280
3.275
-40
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VIN (V)
FIGURE 2-8:
(ILOAD = 100 mA).
VOUT vs. VIN
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
FIGURE 2-11:
Output Voltage (3.3V) vs.
Temperature (ILOAD = 10 mA).
3.290
3.288
5.025
ILOAD = 150 mA
5.020
3.282
3.280
3.278
3.276
ILOAD = 10 mA
5.015
3.284
VOUT (V)
VOUT (V)
3.286
5.010
5.005
5.000
4.995
CIN = 1 μF
COUT = 1 μF
VIN = 4.3V
4.990
4.985
3.274
VIN = 6V
CIN = 1 μF
COUT = 1 μF
-40
-40
-20
-10
0
20
40
85
125
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
TEMPERATURE (°C)
FIGURE 2-9:
(ILOAD = 150 mA).
VOUT vs. VIN
© 2007 Microchip Technology Inc.
FIGURE 2-12:
Output Voltage (5V) vs.
Temperature (ILOAD = 10 mA).
DS21350D-page 5
TC1054/TC1055/TC1186
Note: Unless otherwise indicated, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.
10.0
RLOAD = 50 Ω
COUT = 1 μF
CIN = 1 μF
4.994
4.992
ILOAD = 150 mA
NOISE (μV/√Hz)
VOUT (V)
4.990
4.988
4.986
4.984
4.982
4.980
4.978
4.976
VIN = 6V
CIN = 1 μF
COUT = 1 μF
1.0
0.1
4.974
-40
-20
-10
0
20
40
85
125
0.0
0.01K 0.1K
TEMPERATURE (°C)
FIGURE 2-13:
Output Voltage (5V) vs.
Temperature (ILOAD = 10 mA).
FIGURE 2-16:
1K
10K 100K 1000K
FREQUENCY (Hz)
Output Noise vs. Frequency.
1000
COUT = 1 μF
to 10 μF
70
100
50
COUT ESR (Ω)
GND CURRENT (μA)
60
ILOAD = 10 mA
40
30
10
Stable Region
1
20
10
VIN = 6V
CIN = 1 μF
COUT = 1 μF
0.1
0
0.01
-40
-20
-10
0
20
40
TEMPERATURE (°C)
85
125
0 10 20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
FIGURE 2-17:
Current.
FIGURE 2-14:
GND Current vs.
Temperature (ILOAD = 10 mA).
Stability Region vs. Load
80
GND CURRENT (μA)
70
ILOAD = 150 mA
VSHDN
60
50
40
30
20
10
VOUT
VIN = 6V
CIN = 1 μF
COUT = 1 μF
0
-40
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
FIGURE 2-15:
GND Current vs.
Temperature (ILOAD = 150 mA).
Conditions: CIN = 1 µF, COUT = 1 µF,
ILOAD = 100 mA, VIN = 4.3V, Temp = +25°C,
Fall Time = 184 µs
FIGURE 2-18:
LDO.
DS21350D-page 6
Measure Rise Time of 3.3V
© 2007 Microchip Technology Inc.
TC1054/TC1055/TC1186
Note: Unless otherwise indicated, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.
VSHDN
VSHDN
VOUT
VOUT
Conditions: CIN = 1 µF, COUT = 1 µF,
ILOAD = 100 mA, VIN = 6V, Temp = +25°C,
Fall Time = 192 µs
FIGURE 2-19:
LDO.
Measure Rise Time of 5.0V
Conditions: CIN = 1 µF, COUT = 1 µF,
ILOAD = 100 mA, VIN = 4.3V, Temp = +25°C,
Fall Time = 52 µs
FIGURE 2-21:
LDO.
Measure Fall Time of 3.3V
VSHDN
VOUT
VOUT
Conditions: VIN = 6V, CIN = 0 µF, COUT = 1 µF
ILOAD was increased until temperature of die
reached about 160°C, at which time integrated thermal protection circuitry shuts the regulator off when
die temperature exceeds approximately 160°C. The
regulator remains off until die temperature drops to
approximately 150°C.
Conditions: CIN = 1 µF, COUT = 1 µF,
ILOAD = 100 mA, VIN = 6V, Temp = +25°C,
Fall Time = 88 µs
FIGURE 2-22:
LDO.
Measure Fall Time of 5.0V
FIGURE 2-20:
Thermal Shutdown
Response of 5.0V LDO.
© 2007 Microchip Technology Inc.
DS21350D-page 7
TC1054/TC1055/TC1186
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
Pin No.
3.1
PIN FUNCTION TABLE
Symbol
Description
1
VIN
2
GND
3
SHDN
Shutdown control input
4
ERROR
Out-of-Regulation Flag
(Open-drain output)
5
VOUT
Unregulated supply input
Ground terminal
Regulated voltage output
Unregulated Supply Input (VIN)
Connect unregulated input supply to the VIN pin. If
there is a large distance between the input supply and
the LDO regulator, some input capacitance is
necessary for proper operation. A 1 µF capacitor
connected from VIN to ground is recommended for
most applications.
3.2
Ground Terminal (GND)
Connect the unregulated input supply ground return to
GND. Also connect the negative side of the 1 µF typical
input decoupling capacitor close to GND and the
negative side of the output capacitor COUT to GND.
DS21350D-page 8
3.3
Shutdown Control Input (SHDN)
The regulator is fully enabled when a logic-high is
applied to SHDN. The regulator enters shutdown when
a logic-low is applied to SHDN. During shutdown,
output voltage falls to zero, ERROR is open-circuited
and supply current is reduced to 0.5 µA (max).
3.4
Out Of Regulation Flag (ERROR)
ERROR goes low when VOUT is out-of-tolerance by
approximately -5%.
3.5
Regulated Voltage Output (VOUT)
Connect the output load to VOUT of the LDO. Also
connect the positive side of the LDO output capacitor
as close as possible to the VOUT pin.
© 2007 Microchip Technology Inc.
TC1054/TC1055/TC1186
4.0
DETAILED DESCRIPTION
The TC1054, TC1055 and TC1186 are precision fixed
output voltage regulators (If an adjustable version is
desired, please see the TC1070/TC1071/TC1187 data
sheet (DS21353)). Unlike bipolar regulators, the
TC1054, TC1055 and TC1186 supply current does not
increase with load current.
Figure 4-1 shows a typical application circuit, where the
regulator is enabled any time the shutdown input
(SHDN) is at or above VIH, and shutdown (disabled)
when SHDN is at or below VIL. SHDN may be
controlled by a CMOS logic gate or I/O port of a
microcontroller. If the SHDN input is not required, it
should be connected directly to the input supply. While
in shutdown, supply current decreases to 0.05 µA
(typical), VOUT falls to zero volts, and ERROR is opencircuited.
+
+
1 µF
Battery
VIN
VOUT
TC1054
TC1055
TC1186
VOUT
4.1
ERROR Open-Drain Output
ERROR is driven low whenever VOUT falls out of
regulation by more than -5% (typical). This condition
may be caused by low input voltage, output current
limiting or thermal limiting. The ERROR threshold is 5%
below rated VOUT, regardless of the programmed
output voltage value (e.g. ERROR = VOL at 4.75V (typ.)
for a 5.0V regulator and 2.85V (typ.) for a 3.0V
regulator). ERROR output operation is shown in
Figure 4-2.
Note that ERROR is active when VOUT falls to VTH and
inactive when VOUT rises above VTH by VHYS.
As shown in Figure 4-1, ERROR can be used either as
a battery low flag or as a processor RESET signal (with
the addition of timing capacitor C2). R1 x C2 should be
chosen to maintain ERROR below VIH of the processor
RESET input for at least 200 ms to allow time for the
system to stabilize. Pull-up resistor R1 can be tied to
VOUT, VIN or any other voltage less than (VIN + 0.3V).
+1 µF
C1
VOUT
GND
HYSTERESIS (VH)
VTH
V+
SHDN ERROR
Shutdown Control
(to CMOS Logic or Tie
to VIN if unused)
C2 Required Only
if ERROR is used as a
Processor RESET Signal
(See Text)
R1
1MW
0.2 µF
C2
BATTLOW
or RESET
tDELAY
ERROR
VIH
VOL
FIGURE 4-2:
FIGURE 4-1:
Error Output Operation.
Typical Application Circuit.
4.2
Output Capacitor
A 1 µF (minimum) capacitor from VOUT to ground is
recommended. The output capacitor should have an
effective series resistance greater than 0.1Ω and less
than 5.0Ω, with a resonant frequency above 1 MHz. A
1 µF capacitor should be connected from VIN to GND if
there is more than 10 inches of wire between the
regulator and the AC filter capacitor or if a battery is
used as the power source. Aluminum electrolytic or
tantalum capacitor types can be used (Since many
aluminum electrolytic capacitors freeze at approximately -30°C, solid tantalums are recommended for
applications operating below -25°C.). When operating
from sources other than batteries, supply-noise
rejection and transient response can be improved by
increasing the value of the input and output capacitors
and employing passive filtering techniques.
© 2007 Microchip Technology Inc.
DS21350D-page 9
TC1054/TC1055/TC1186
5.0
THERMAL CONSIDERATIONS
5.1
Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
5.2
Power Dissipation
The amount of power the regulator dissipates is
primarily a function of input voltage, output voltage and
output current. The following equation is used to
calculate worst case actual power dissipation:
EQUATION 5-1:
Equation 5-1 can be used in conjunction with
Equation 5-2 to ensure regulator thermal operation is
within limits.
For example:
Given:
VINMAX
= 3.0V +5%
VOUTMIN
= 2.7V – 2.5%
ILOADMAX
= 40 mA
TJMAX
= +125°C
TAMAX
= +55°C
Find:
1.
Actual power dissipation
2.
Maximum allowable dissipation
Actual power dissipation:
P D ≈ ( V INMAX – V OUTMIN )I LOADMAX
P D ≈ ( V INMAX – V OUTMIN )I LOADMAX
Where:
PD
VINMAX
VOUTMIN
ILOADMAX
= Worst case actual power dissipation
= Maximum voltage on VIN
= Minimum regulator output voltage
= Maximum output (load) current
The
maximum
allowable
power
dissipation
(Equation 5-2) is a function of the maximum ambient
temperature (TAMAX), the maximum allowable die
temperature (TJMAX) and the thermal resistance from
junction-to-air (θJA). The 5-Pin SOT-23 package has a
θJA of approximately 220°C/Watt.
EQUATION 5-2:
( T JMAX – T AMAX )
P DMAX = ------------------------------------------θ JA
Where all terms are previously defined.
= [ ( 3.0 × 1.05 ) – ( 2.7 × 0.975 ) ]40 × 10
-3
= 20.7mW
Maximum allowable power dissipation:
( T JMAX – T AMAX )
P DMAX = ------------------------------------------θ JA
125 – 55 )
= (------------------------220
= 318mW
In this example, the TC1054 dissipates a maximum of
20.7 mW; below the allowable limit of 318 mW. In a
similar manner, Equation 5-1 and Equation 5-2 can be
used to calculate maximum current and/or input
voltage limits.
5.3
Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads and wide power
supply bus lines combine to lower θJA and, therefore,
increase the maximum allowable power dissipation
limit.
DS21350D-page 10
© 2007 Microchip Technology Inc.
TC1054/TC1055/TC1186
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
5-Pin SOT-23
5
4
1 2
1
1
&
2
3 4
3
2
represents part number code +
temperature range and voltage
(V)
TC1054
Code
TC1055
Code
TC1186
Code
1.8
CY
DY
PY
2.5
C1
D1
P1
2.6
CT
DT
PV
2.7
C2
D2
P2
2.8
CZ
DZ
PZ
2.85
C8
D8
P8
3.0
C3
D3
P3
3.3
C4
D4
P5
3.6
C9
D9
P9
4.0
C0
D0
P0
5.0
C6
D6
P7
3
represents year and quarter code
4
represents lot ID number
© 2007 Microchip Technology Inc.
DS21350D-page 11
TC1054/TC1055/TC1186
5-Lead Plastic Small Outline Transistor (OT)
CT [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
b
N
E
E1
3
2
1
e
e1
D
A2
A
c
φ
A1
L
L1
Units
Dimension Limits
Number of Pins
MILLIMETERS
MIN
NOM
MAX
N
5
Lead Pitch
e
0.95 BSC
Outside Lead Pitch
e1
Overall Height
A
0.90
–
Molded Package Thickness
A2
0.89
–
1.30
Standoff
A1
0.00
–
0.15
Overall Width
E
2.20
–
3.20
Molded Package Width
E1
1.30
–
1.80
Overall Length
D
2.70
–
3.10
Foot Length
L
0.10
–
0.60
Footprint
L1
0.35
–
0.80
Foot Angle
φ
0°
–
30°
Lead Thickness
c
0.08
–
0.26
1.90 BSC
1.45
Lead Width
b
0.20
–
0.51
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-091B
DS21350D-page 12
© 2007 Microchip Technology Inc.
TC1054/TC1055/TC1186
APPENDIX A:
REVISION HISTORY
Revision D (February 2007)
• Corrected standard output voltages on page 1
and in “Product Identification System”.
• Added TDELAY parameter in DC Characteristics
table in “Electrical Characteristics”.
• Changes to Figure 4-2.
• “Packaging Information”: Corrected SOT-23
Packaging Informaton.
Revision C (March 2003)
• Undocumented changes.
Revision B (May 2002)
• Undocumented changes.
Revision A (March 2002)
• Original Release of this Document.
© 2007 Microchip Technology Inc.
DS21350D-page 13
TC1054/TC1055/TC1186
NOTES:
DS21350D-page 14
© 2007 Microchip Technology Inc.
TC1054/TC1055/TC1186
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X.X
Device
Output
Voltage
X
Temperature
Range
XXXXX
Package
Device:
TC1054:
TC1055:
TC1186:
50 mA LDO with Shutdown & Error output
100 mA LDO with Shutdown & Error output
150 mA LDO with Shutdown & Error output
Output Voltage *:
1.8 =
1.8V “Standard”
2.5 =
2.5V “Standard”
2.6 =
2.6V “Standard”
2.7 =
2.7V “Standard”
2.8 =
2.8V “Standard”
2.85 =
2.85V “Standard”
3.0 =
3.0V “Standard”
3.3 =
3.3V “Standard”
3.6 =
3.6V “Standard”
4.0 =
4.0V “Standard”
5.0 =
5.0V “Standard”
*Contact factory for other output voltage options.
Temperature Range:
V
= -40°C to +125°C
Package:
CT713 = 5L SOT-23, Tape and Reel
© 2007 Microchip Technology Inc.
Examples:
a)
b)
c)
d)
e)
f)
g)
h)
i)
j)
k)
TC1054-1.8VCT713: 1.8V LDO Regulator
TC1054-2.5VCT713: 2.5V LDO Regulator
TC1054-2.6VCT713: 2.6V LDO Regulator
TC1054-2.7VCT713: 2.7V LDO Regulator
TC1054-2.8VCT713: 2.8V LDO Regulator
TC1054-2.85VCT713: 2.85V LDO Regulator
TC1054-3.0VCT713: 3.0V LDO Regulator
TC1054-3.3VCT713: 3.3V LDO Regulator
TC1054-3.6VCT713: 3.6V LDO Regulator
TC1054-4.0VCT713: 4.0V LDO Regulator
TC1054-5.0VCT713: 5.0V LDO Regulator
a)
TC1055-1.8VCT713: 1.8V LDO Regulator
b)
c)
d)
e)
f)
g)
h)
i)
j)
k)
TC1055-2.5VCT713: 2.5V LDO Regulator
TC1055-2.6VCT713: 2.6V LDO Regulator
TC1055-2.7VCT713: 2.7V LDO Regulator
TC1055-2.8VCT713: 2.8V LDO Regulator
TC1055-2.85VCT713: 2.85V LDO Regulator
TC1055-3.0VCT713: 3.0V LDO Regulator
TC1055-3.3VCT713: 3.3V LDO Regulator
TC1055-3.6VCT713: 3.6V LDO Regulator
TC1055-4.0VCT713: 4.0V LDO Regulator
TC1055-5.0VCT713: 5.0V LDO Regulator
a)
TC1186-1.8VCT713: 1.8V LDO Regulator
b)
c)
d)
e)
f)
g)
h)
i)
j)
k)
TC1186-2.5VCT713: 2.5V LDO Regulator
TC1186-2.6VCT713: 2.6V LDO Regulator
TC1186-2.7VCT713: 2.7V LDO Regulator
TC1186-2.8VCT713: 2.8V LDO Regulator
TC1186-2.85VCT713: 2.85V LDO Regulator
TC1186-3.0VCT713: 3.0V LDO Regulator
TC1186-3.3VCT713: 3.3V LDO Regulator
TC1186-3.6VCT713: 3.6V LDO Regulator
TC1186-4.0VCT713: 4.0V LDO Regulator
TC1186-5.0VCT713: 5.0V LDO Regulator
DS21350D-page 15
TC1054/TC1055/TC1186
NOTES:
DS21350D-page 16
© 2007 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, microID, MPLAB, PIC,
PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and
SmartShunt are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, Linear Active Thermistor, Migratable
Memory, MXDEV, MXLAB, PS logo, SEEVAL, SmartSensor
and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, ECAN,
ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi,
MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit,
PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal,
PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB,
rfPICDEM, Select Mode, Smart Serial, SmartTel, Total
Endurance, UNI/O, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2007, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona, Gresham, Oregon and Mountain View, California. The
Company’s quality system processes and procedures are for its PIC®
MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial
EEPROMs, microperipherals, nonvolatile memory and analog
products. In addition, Microchip’s quality system for the design and
manufacture of development systems is ISO 9001:2000 certified.
© 2007 Microchip Technology Inc.
DS21350D-page 17
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12/08/06
DS21350D-page 18
© 2007 Microchip Technology Inc.