TC4423/TC4424/TC4425 3A Dual High-Speed Power MOSFET Drivers Features General Description • High Peak Output Current: 3A • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Capacitive Load Drive Capability: - 1800 pF in 25 ns • Short Delay Times: <40 ns (typ) • Matched Rise/Fall Times • Low Supply Current: - With Logic ‘1’ Input – 3.5 mA (Max) - With Logic ‘0’ Input – 350 µA (Max) • Low Output Impedance: 3.5Ω (typ) • Latch-Up Protected: Will Withstand 1.5A Reverse Current • Logic Input Will Withstand Negative Swing Up To 5V • ESD Protected: 4 kV • Pin compatible with the TC1426/TC1427/TC1428, TC4426/TC4427/TC4428 and TC4426A/ TC4427A/TC4428A devices. • Space-saving 8-Pin 6x5 DFN Package The TC4423/TC4424/TC4425 devices are a family of 3A, dual-output buffers/MOSFET drivers. Pin compatible with the TC1426/27/28, TC4426/27/28 and TC4426A/27A/28A dual 1.5A driver families, the TC4423/24/25 family has an increased latch-up current rating of 1.5A, making them even more robust for operation in harsh electrical environments. As MOSFET drivers, the TC4423/TC4424/TC4425 can easily charge 1800 pF gate capacitance in under 35 nsec, providing low enough impedances in both the on and off states to ensure the MOSFET's intended state will not be affected, even by large transients. The TC4423/TC4424/TC4425 inputs may be driven directly from either TTL or CMOS (2.4V to 18V). In addition, the 300 mV of built-in hysteresis provides noise immunity and allows the device to be driven from slowly rising or falling waveforms. Applications • Switch Mode Power Supplies • Pulse Transformer Drive • Line Drivers Package Types(1) 8-Pin PDIP TC4423 TC4424 TC4425 NC IN A GND IN B 1 8 2 TC4423 7 3 TC4424 6 4 TC4425 5 8-Pin DFN NC 1 IN A 2 GND 3 IN B 4 TC4423 TC4424 TC4425 NC OUT A VDD OUT B NC OUT A VDD OUT B NC OUT A VDD OUT B (2) TC4423 TC4424 TC4425 8 NC NC NC 7 OUT A OUT A OUT A 6 VDD VDD VDD 5 OUT B OUT B OUT B 16-Pin SOIC (Wide) TC4423 TC4424 TC4425 NC IN A NC GND GND NC IN B NC 1 16 2 3 15 4 5 6 7 8 TC4423 TC4424 TC4425 14 13 12 11 10 9 NC OUT A OUT A VDD VDD OUT B OUT B NC NC OUT A OUT A VDD VDD OUT B OUT B NC NC OUT A OUT A VDD VDD OUT B OUT B NC Note 1: Duplicate pins must both be connected for proper operation. 2: Exposed pad of the DFN package is electrically isolated. 2004 Microchip Technology Inc. DS21421D-page 1 TC4423/TC4424/TC4425 Functional Block Diagram(1) VDD Inverting 750 µA 300 mV Output Non-inverting Input Effective Input C = 20 pF (Each Input) GND 4.7V TC4423 Dual Inverting TC4424 Dual Non-inverting TC4425 One Inverting, One Non-inverting Note 1: Unused inputs should be grounded. DS21421D-page 2 2004 Microchip Technology Inc. TC4423/TC4424/TC4425 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Supply Voltage ................................................................+22V Input Voltage, IN A or IN B ................................................ (VDD + 0.3V) to (GND – 5V) Package Power Dissipation (TA ≤ 70°C) DFN ......................................................................... Note 2 PDIP .......................................................................730 mW SOIC.......................................................................470 mW † Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V. Parameters Sym Min Typ Max Units Logic ‘1’, High Input Voltage VIH 2.4 — — V Logic ‘0’, Low Input Voltage VIL — — 0.8 V Input Current IIN –1 — 1 µA VOH VDD – 0.025 — — V Conditions Input 0V ≤ VIN ≤ VDD Output High Output Voltage Low Output Voltage VOL — — 0.025 V Output Resistance, High ROH — 2.8 5 Ω IOUT = 10 mA, VDD = 18V Output Resistance, Low ROL — 3.5 5 Ω IOUT = 10 mA, VDD = 18V Peak Output Current IPK — 3 — A Latch-Up Protection Withstand Reverse Current IREV — >1.5 — A Duty cycle ≤ 2%, t ≤ 300 µsec. Rise Time tR — 23 35 ns Figure 4-1, Figure 4-2, CL = 1800 pF Fall Time tF — 25 35 ns Figure 4-1, Figure 4-2, CL = 1800 pF Delay Time tD1 — 33 75 ns Figure 4-1, Figure 4-2, CL = 1800 pF Delay Time tD2 — 38 75 ns Figure 4-1, Figure 4-2, CL = 1800 pF IS — — 1.5 0.15 2.5 0.25 mA VIN = 3V (Both inputs) VIN = 0V (Both inputs) Switching Time (Note 1) Power Supply Power Supply Current Note 1: 2: Switching times ensured by design. Package power dissipation is dependent on the copper pad area on the PCB. 2004 Microchip Technology Inc. DS21421D-page 3 TC4423/TC4424/TC4425 DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ VDD ≤ 18V. Parameters Sym Min Typ Max Units Conditions Logic ‘1’, High Input Voltage VIH 2.4 — — V Logic ‘0’, Low Input Voltage VIL — — 0.8 V Input Current IIN –10 — +10 µA High Output Voltage VOH VDD – 0.025 — — V Low Output Voltage VOL — — 0.025 V Output Resistance, High ROH — 3.7 8 Ω IOUT = 10 mA, VDD = 18V Output Resistance, Low ROL — 4.3 8 Ω IOUT = 10 mA, VDD = 18V Peak Output Current IPK — 3.0 — A Latch-Up Protection Withstand Reverse Current IREV — >1.5 — A Duty cycle ≤ 2%, t ≤ 300 µsec Rise Time tR — 28 60 ns Figure 4-1, Figure 4-2, CL = 1800 pF Fall Time tF — 32 60 ns Figure 4-1, Figure 4-2, CL = 1800 pF Delay Time tD1 — 32 100 ns Figure 4-1, Figure 4-2, CL = 1800 pF Delay Time tD2 — 38 100 ns Figure 4-1, Figure 4-2, CL = 1800 pF IS — — 2.0 0.2 3.5 0.3 mA VIN = 3V (Both inputs) VIN = 0V (Both inputs) Input 0V ≤ VIN ≤ VDD Output Switching Time (Note 1) Power Supply Power Supply Current Note 1: Switching times ensured by design. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range (C) TA 0 — +70 °C Specified Temperature Range (E) TA –40 — +85 °C Specified Temperature Range (V) TA –40 — +125 °C Maximum Junction Temperature TJ — — +150 °C Storage Temperature Range TA –65 — +150 °C Thermal Resistance, 8L-6x5 DFN θJA — 33.2 — °C/W Thermal Resistance, 8L-PDIP θJA — 125 — °C/W Thermal Resistance, 16L-SOIC θJA — 155 — °C/W Package Thermal Resistances DS21421D-page 4 Typical four-layer board with vias to ground plane 2004 Microchip Technology Inc. TC4423/TC4424/TC4425 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 100 100 4700 pF 4700 pF 80 tFALL (nsec) tRISE (nsec) 80 3300 pF 60 2200 pF 40 1500 pF 1000 pF 20 470 pF 0 2200 pF 40 1500 pF 1000 pF 20 470 pF 0 4 6 8 FIGURE 2-1: Voltage. 10 12 VDD (V) 14 16 18 Rise Time vs. Supply 4 6 8 10 12 VDD (V) FIGURE 2-4: Voltage. 5V tFALL (nsec) 60 10V 15V 40 18 Fall Time vs. Supply 5V 60 10V 15V 40 20 20 0 100 1000 0 100 10,000 1000 CLOAD (pF) CLOAD (pF) FIGURE 2-2: Load. Rise Time vs. Capacitive FIGURE 2-5: Load. 32 10,000 Fall Time vs. Capacitive 100 CLOAD = 2200 pF tRISE Delay Time (nsec) tRISE 26 24 CLOAD = 2200 pF VDD = 10V tFALL 28 Time (nsec) 16 80 80 30 14 100 100 tRISE (nsec) 3300 pF 60 tD1 80 60 40 22 tFALL 20 18 -55 -35 FIGURE 2-3: Temperature. -15 tD2 20 5 25 45 TA (°C) 65 85 105 125 Rise and Fall Times vs. 2004 Microchip Technology Inc. 0 FIGURE 2-6: Amplitude. 1 2 3 4 5 6 7 Input (V) 8 9 10 11 12 Propagation Delay vs. Input DS21421D-page 5 TC4423/TC4424/TC4425 Typical Performance Curves (Continued) 50 50 CLOAD = 2200 pF CLOAD = 2200 pF 45 tD2 Delay Time (nsec) Delay Time (nsec) 45 40 35 tD2 30 tD1 35 tD1 30 25 25 20 -55 20 4 6 8 FIGURE 2-7: Supply Voltage. 10 12 VDD (V) 14 16 18 Propagation Delay Time vs. Both Inputs = 1 25 45 TA (°C) 65 85 105 125 Propagation Delay Time vs. IQUIESCENT (mA) 1.0 0.8 Both Inputs = 1 0.6 0.4 0.2 0.01 8 FIGURE 2-8: Supply Voltage. 10 12 VDD (V) 14 16 18 Quiescent Current vs. Both Inputs = 0 0.0 -55 -35 -15 5 FIGURE 2-11: Temperature. 14 25 45 TA (°C) 65 85 105 125 Quiescent Current vs. 14 12 12 Worst Case @ TJ = +150°C 10 RDS(ON) (Ω) RDS(ON) (Ω) 5 1.2 Both Inputs = 0 0.1 6 -15 1.4 1 4 -35 FIGURE 2-10: Temperature. TA = 25°C IQUIESCENT (mA) 40 8 6 Typical @ TA = +25°C 4 Worst Case @ TJ = +150°C 10 8 6 Typical @ TA = +25°C 4 2 2 4 6 8 10 12 VDD (V) 14 16 FIGURE 2-9: Output Resistance (Output High) vs. Supply Voltage. DS21421D-page 6 18 4 6 8 10 12 VDD (V) 14 16 18 FIGURE 2-12: Output Resistance (Output Low) vs. Supply Voltage. 2004 Microchip Technology Inc. TC4423/TC4424/TC4425 Typical Performance Curves (Continued) Note: Load on single output only 60 60 VDD = 18V VDD = 18V 50 3300 pF 50 1000 pF ISUPPLY (mA) ISUPPLY (mA) 634 kHz 40 30 355 kHz 20 200 kHz 40 30 10,000 pF 20 100 pF 63.4 kHz 10 112.5 kHz 35.5 kHz 10 20 kHz 0 100 FIGURE 2-13: Capacitive Load. 1000 CLOAD (pF) 0 10,000 Supply Current vs. 1.125 MHz 40 200 kHz 634 kHz 355 kHz 0 100 FIGURE 2-14: Capacitive Load. 1000 CLOAD (pF) 60 50 40 30 10 0 10,000 Supply Current vs. 10 FIGURE 2-17: Frequency. 120 100 Frequency (kHz) 1000 Supply Current vs. 120 VDD = 6V 4700 pF VDD = 6V 100 100 80 1.125 MHz 60 3.55 MHz 634 kHz 40 2 MHz FIGURE 2-15: Capacitive Load. 10,000 pF 80 2200 pF 60 1000 pF 40 100 pF 355 kHz 20 0 100 ISUPPLY (mA) ISUPPLY (mA) 100 pF 10,000 pF 20 112.5 kHz 63.4 kHz 20 kHz 10 3300 pF 1000 pF 70 50 20 Supply Current vs. VDD = 12V 80 2 MHz 60 30 1000 90 VDD = 12V ISUPPLY (mA) ISUPPLY (mA) 70 100 Frequency (kHz) FIGURE 2-16: Frequency. 90 80 10 20 112.5 kHz 20 kHz 1000 CLOAD (pF) 10,000 Supply Current vs. 2004 Microchip Technology Inc. 0 10 FIGURE 2-18: Frequency. 100 Frequency (kHz) 1000 Supply Current vs. DS21421D-page 7 TC4423/TC4424/TC4425 Typical Performance Curves (Continued) 10-7 8 6 4 A • sec 2 10-8 8 6 4 2 10-9 0 2 4 6 8 10 12 14 16 18 VIN (V) Note: The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4. FIGURE 2-19: DS21421D-page 8 TC4423 Crossover Energy. 2004 Microchip Technology Inc. TC4423/TC4424/TC4425 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: 8-Pin DFN 16-Pin SOIC (Wide) 1 1 1 NC No connection 2 2 2 IN A Input A — — 3 NC No connection 3 3 4 GND Ground — — 5 GND Ground — — 6 NC No connection 8-Pin PDIP Symbol Description 4 4 7 IN B Input B — — 8 NC No connection — — 9 NC 5 5 10 OUT B Output B — — 11 OUT B Output B 6 6 12 VDD — — 13 VDD 7 7 14 OUT A Output A — — 15 OUT A Output A 8 8 16 NC No connection PAD — NC Exposed Metal Pad — Note 1: 3.1 PIN FUNCTION TABLE (1) No connection Supply input Supply input Duplicate pins must be connected for proper operation. Inputs A and B 3.4 Ground (GND) Inputs A and B are TTL/CMOS compatible inputs that control outputs A and B, respectively. These inputs have 300 mV of hysteresis between the high and low input levels, allowing them to be driven from slow rising and falling signals, and to provide noise immunity. Ground is the device return pin. The ground pin(s) should have a low-impedance connection to the bias supply source return. High peak currents will flow out the ground pin(s) when the capacitive load is being discharged. 3.2 3.5 Outputs A and B Outputs A and B are CMOS push-pull outputs that are capable of sourcing and sinking 3A peaks of current (VDD = 18V). The low output impedance ensures the gate of the external MOSFET will stay in the intended state even during large transients. These outputs also have a reverse current latch-up rating of 1.5A. 3.3 Exposed Metal Pad The exposed metal pad of the 6x5 DFN package is not internally connected to any potential. Therefore, this pad can be connected to a ground plane or other copper plane on a printed circuit board to aid in heat removal from the package. Supply Input (VDD) VDD is the bias supply input for the MOSFET driver and has a voltage range of 4.5V to 18V. This input must be decoupled to ground with a local ceramic capacitor. This bypass capacitor provides a localized lowimpedance path for the peak currents that are to be provided to the load. 2004 Microchip Technology Inc. DS21421D-page 9 TC4423/TC4424/TC4425 4.0 APPLICATIONS INFORMATION VDD = 18V VDD = 18V 1 µF WIMA MKS-2 Input 1 µF WIMA MKS-2 0.1 µF Ceramic Output CL = 1800 pF 1 2 Input TC4424 (1/2 TC4425) Input: 100 kHz, square wave, tRISE = tFALL ≤ 10 ns +5V Input: 100 kHz, square wave, tRISE = tFALL ≤ 10 ns +5V 90% Input 0V Output CL = 1800 pF 1 2 TC4423 (1/2 TC4425) 0.1 µF Ceramic 90% Input 10% 18V tD1 tF tD2 0V tR 90% 90% Output 0V FIGURE 4-1: Time. DS21421D-page 10 10% 18V tD1 90% Output 10% 10% Inverting Driver Switching 0V FIGURE 4-2: Switching Time. 10% tR 90% tD2 tF 10% Non-inverting Driver 2004 Microchip Technology Inc. TC4423/TC4424/TC4425 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 8-Lead DFN Example: XXXXXXX XXXXXXX XXYYWW NNN TC4423 EMF 0420 256 8-Lead PDIP (300 mil) Example: XXXXXXXX XXXXXNNN YYWW TC4423 CPA256 0420 16-Lead SOIC (300 mil) Example: XXXXXXXXXXX XXXXXXXXXXX XXXXXXXXXXX YYWWNNN Legend: Note: * XX...X YY WW NNN TC4423COE 0420256 Customer specific information* Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. Standard marking consists of Microchip part number, year code, week code, traceability code (facility code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please check with your Microchip Sales Office. 2004 Microchip Technology Inc. DS21421D-page 11 TC4423/TC4424/TC4425 8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated DS21421D-page 12 2004 Microchip Technology Inc. TC4423/TC4424/TC4425 8-Lead Plastic Dual In-line (P) – 300 mil (PDIP) E1 D 2 n 1 α E A2 A L c A1 β B1 p eB B Units Dimension Limits n p Number of Pins Pitch Top to Seating Plane Molded Package Thickness Base to Seating Plane Shoulder to Shoulder Width Molded Package Width Overall Length Tip to Seating Plane Lead Thickness Upper Lead Width Lower Lead Width Overall Row Spacing Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic § A A2 A1 E E1 D L c B1 B eB α β MIN .140 .115 .015 .300 .240 .360 .125 .008 .045 .014 .310 5 5 INCHES* NOM MAX 8 .100 .155 .130 .170 .145 .313 .250 .373 .130 .012 .058 .018 .370 10 10 .325 .260 .385 .135 .015 .070 .022 .430 15 15 MILLIMETERS NOM 8 2.54 3.56 3.94 2.92 3.30 0.38 7.62 7.94 6.10 6.35 9.14 9.46 3.18 3.30 0.20 0.29 1.14 1.46 0.36 0.46 7.87 9.40 5 10 5 10 MIN MAX 4.32 3.68 8.26 6.60 9.78 3.43 0.38 1.78 0.56 10.92 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-018 2004 Microchip Technology Inc. DS21421D-page 13 TC4423/TC4424/TC4425 16-Lead Plastic Small Outline (SO) – Wide, 300 mil (SOIC) E p E1 D 2 1 n B h α 45° c A2 A φ β L Units Dimension Limits n p Number of Pins Pitch Overall Height Molded Package Thickness Standoff § Overall Width Molded Package Width Overall Length Chamfer Distance Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic A A2 A1 E E1 D h L φ c B α β MIN .093 .088 .004 .394 .291 .398 .010 .016 0 .009 .014 0 0 A1 INCHES* NOM 16 .050 .099 .091 .008 .407 .295 .406 .020 .033 4 .011 .017 12 12 MAX .104 .094 .012 .420 .299 .413 .029 .050 8 .013 .020 15 15 MILLIMETERS NOM 16 1.27 2.36 2.50 2.24 2.31 0.10 0.20 10.01 10.34 7.39 7.49 10.10 10.30 0.25 0.50 0.41 0.84 0 4 0.23 0.28 0.36 0.42 0 12 0 12 MIN MAX 2.64 2.39 0.30 10.67 7.59 10.49 0.74 1.27 8 0.33 0.51 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-013 Drawing No. C04-102 DS21421D-page 14 2004 Microchip Technology Inc. TC4423/TC4424/TC4425 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X Temperature Range XX XXX X Package Tape & Reel PB Free Examples: a) TC4423COE: 3A Dual Inverting MOSFET Driver, 0°C to +70°C, 16LD SOIC package. Device: TC4423: TC4424: TC4425: 3A Dual MOSFET Driver, Inverting 3A Dual MOSFET Driver, Non-Inverting 3A Dual MOSFET Driver, Complementary b) C E V 0°C to +70°C (PDIP & SOIC Only) -40°C to +85°C -40°C to +125°C c) TC4423CPA: 3A Dual Inverting MOSFET Driver, 0°C to +70°C, 8LD PDIP package. Temperature Range: = = = TC4423VMF: 3A Dual Inverting MOSFET Driver, -40°C to +125°C, 8LD DFN package. Package: MF = Dual, Flat, No-Lead (6x5 mm Body), 8-lead MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead (Tape and Reel) OE = SOIC (Wide), 16-pin OE713 = SOIC (Wide), 16-pin (Tape and Reel) PA = Plastic DIP, (300 mil body), 8-lead a) G 3A Dual Non-Inverting, MOSFET Driver, 0°C to +70°C, 16LD SOIC package, Tape and Reel. b) PB Free: TC4424COE713: TC4424EPA: = Lead-Free device * = Blank 3A Dual Non-Inverting, MOSFET Driver, -40°C to +85°C, 8LD PDIP package. * Available on selected packages. Contact your local sales representative for availability. a) TC4425EOE: 3A Dual Complementary, MOSFET Driver, -40°C to +85°C, 16LD SOIC package. b) TC4425CPA: 3A Dual Complementary, MOSFET Driver, 0°C to +70°C, PDIP package. Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2004 Microchip Technology Inc. DS21421D-page 15 TC4423/TC4424/TC4425 NOTES: DS21421D-page 16 2004 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2004, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 2004 Microchip Technology Inc. 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