TCDT1120(G) Series Vishay Telefunken Optocoupler with Phototransistor Output Description The TCDT1120(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14827 D For appl. class I – IV at mains voltage ≤ 300 V D For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. nc C E 6 5 4 1 2 3 A (+) C (–) VDE Standards D VDE 0884 94 9222 These couplers perform safety functions according to the following equipment standards: Optocoupler for electrical safety requirements D IEC 950/EN 60950 nc Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) D VDE 0804 Telecommunication processing apparatus and data D IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction Ordering Code CTR Ranking 1) TCDT1120/ TCDT1120G >40% TCDT1122/ TCDT1122G1) 63 to 125% TCDT1123/ TCDT1123G1) 100 to 200% 1) TCDT1124/ TCDT1124G 160 to 320% 1) G = Leadform 10.16 mm; G is not market on the body 224 Remarks Rev. A3, 11–Jan–99 TCDT1120(G) Series Vishay Telefunken Features D Rated recurring peak voltage (repetitive) Approvals: D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 VIORM = 600 VRMS D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation ≥ 0.75 mm D FIMKO (SETI): EN 60950, Certificate number 12399 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 General features: D Isolation materials according to UL94-VO D Pollution degree 2 (DIN/VDE 0110 resp. IEC 664) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: D VDE 0884, Certificate number 94778 VDE 0884 related features: D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) Therefore, extra low coupling capacity of typical 0.3 pF, high Common Mode Rejection D Low temperature coefficient of CTR D Base not connected D CTR offered in 4 groups D Coupling System A Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 5 60 3 100 125 Unit V mA A mW °C Symbol VCBO VCEO VECO IC ICM PV Tj Value 90 90 7 50 100 150 125 Unit V V V mA mA mW °C Symbol VIO Ptot Tamb Tstg Tsd Value 3.75 250 –55 to +100 –55 to +125 260 Unit kV mW °C °C °C Output (Detector) Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Rev. A3, 11–Jan–99 Test Conditions t = 1 min Tamb ≤ 25°C 2 mm from case, t ≤ 10 s 225 TCDT1120(G) Series Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Test Conditions IC = 100 mA IC = 1 mA IE = 100 mA VCE = 20 V, If = 0 Symbol VCBO VCEO VECO ICEO Min. 90 90 7 Typ. Max. 150 Unit V V V nA Test Conditions IF = 10 mA, IC = 1 mA Symbol VCEsat Min. Max. 0.3 Unit V VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz fc 110 kHz Ck 0.3 pF Output (Detector) Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Typ. Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = 1 mA VCE = 5 V, IF = 10 mA 226 Type TCDT1120(G) TCDT1122(G) TCDT1123(G) TCDT1124(G) TCDT1120(G) TCDT1122(G) TCDT1123(G) TCDT1124(G) Symbol CTR CTR CTR CTR CTR CTR CTR CTR Min. 0.10 0.15 0.30 0.60 0.40 0.63 1 1.60 Typ. Max. Unit 1.25 2.00 3.20 Rev. A3, 11–Jan–99 TCDT1120(G) Series Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Test Conditions Tamb ≤ 25°C Symbol Psi Value 265 Unit mW Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV °C Output (Detector) Parameters Power dissipation Coupler Parameters Rated impulse voltage Safety temperature Insulation Rated Parameters (according to VDE 0884) Parameter Test Conditions Partial discharge test voltage – 100%, ttest = 1 s Routine test Partial discharge g test voltage g – tTr = 60 s, ttest = 10 s, Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb ≤ 100°C VIO = 500 V, Tamb ≤ 150°C Symbol Vpd Min. 1.6 VIOTM Vpd RIO RIO 6 1.3 1012 1011 RIO 109 Typ. Max. Unit kV kV kV W W W (construction test only) VIOTM 300 V Psi 250 t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s (mW) 200 VPd 150 VIOWM VIORM 100 Isi (mA) 50 0 0 0 25 50 75 100 125 150 175 200 Tamb ( °C ) 95 10934 Figure 1. Derating diagram Rev. A3, 11–Jan–99 t3 ttest t4 t1 13930 tTr = 60 s t2 tstres t Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 227 TCDT1120(G) Series Vishay Telefunken Switching Characteristics of TCDT1120(G) and TCDT1122(G) Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 10 mA, RL = 100 W ((see figure g 3)) VS = 5 V, IC = 10 mA, RL = 1 kW ((see figure g 4)) Symbol td tr tf ts ton toff ton toff Typ. 2.5 3.0 3.7 0.3 5.5 4.0 16.5 22.5 Unit ms ms ms ms ms ms ms ms Symbol td tr tf ts ton toff ton toff Typ. 2.8 4.2 4.7 0.3 7.0 5.0 21.0 37.5 Unit ms ms ms ms ms ms ms ms Symbol td tr tf ts ton toff ton toff Typ. 2.0 4.0 4.7 0.3 6.0 5.0 20.0 50.0 Unit ms ms ms ms ms ms ms ms Switching Characteristics of TCDT1123(G) Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 10 mA, RL = 100 W ((see figure g 3)) VS = 5 V, IC = 10 mA, RL = 1 kW ((see figure 4)) g Switching Characteristics of TCDT1124(G) Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time 0 IF Test Conditions VS = 5 V, IC = 10 mA, RL = 100 W ((see figure g 3)) VS = 5 V, IC = 10 mA, RL = 1 kW ((see figure g 4)) IC = 10 mA ; Adjusted through input amplitude RG = 50 W tp = 0.01 T tp = 50 ms 0 IF = 10 mA +5V IC RG = 50 W tp 0.01 T + tp = 50 ms Channel I 50 W 100 W Channel II Channel I w v Oscilloscope 1M RL W CL 20 pF 95 10848 Figure 3. Test circuit, non-saturated operation 228 IF +5V IF 50 W Channel II 1 kW Oscilloscope RL ≥ 1 MW CL ≤ 20 pF 95 10843 Figure 4. Test circuit, saturated operation Rev. A3, 11–Jan–99 TCDT1120(G) Series Vishay Telefunken 96 11698 IF 0 t tp IC 100% 90% 10% 0 t tr td ts ton tp tion td tr ton (= td + tr) tf toff pulse duradelay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time Figure 5. Switching times Typical Characteristics (Tamb = 25_C, unless otherwise specified) 1000.0 Coupled device 250 I F – Forward Current ( mA ) P tot – Total Power Dissipation ( mW ) 300 200 Phototransistor 150 IR-diode 100 50 0 10.0 1.0 0.1 0 96 11700 100.0 40 80 Tamb – Ambient Temperature ( °C ) Figure 6. Total Power Dissipation vs. Ambient Temperature Rev. A3, 11–Jan–99 120 0 96 11862 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) Figure 7. Forward Current vs. Forward Voltage 229 TCDT1120(G) Series Vishay Telefunken 100 IF=50mA VCE=5V IF=10mA 1.4 1.3 IC – Collector Current ( mA ) CTR rel – Relative Current Transfer Ratio 1.5 1.2 1.1 1.0 0.9 0.8 0.7 5mA 1 2mA 1mA CNY75A 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 Tamb – Ambient Temperature ( °C ) VCE=30V IF=0 1000 100 10 1 25 50 75 100 10 Figure 11. Collector Current vs. Collector Emitter Voltage 1.0 CTR=50% 0.8 CNY75A 0.6 0.4 20% 0.2 10% 0 1 100 10 IC – Collector Current ( mA ) 95 11034 Figure 12. Collector Emitter Saturation Voltage vs. Collector Current Figure 9. Collector Dark Current vs. Ambient Temperature 1000 CTR – Current Transfer Ratio ( % ) 100 VCE=5V 10 1 0.1 TCDT1122(G) VCE=5V 100 10 1 0.01 0.1 95 11040 1 VCE – Collector Emitter Voltage ( V ) 100 Tamb – Ambient Temperature ( °C ) 95 11038 0.1 VCEsat – Collector Emitter Saturation Voltage ( V ) ICEO– Collector Dark Current, with open Base ( nA ) 10000 0 0.1 95 11041 Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature IC – Collector Current ( mA ) 10mA 0.6 96 11918 1 10 0.1 100 IF – Forward Current ( mA ) Figure 10. Collector Current vs. Forward Current 230 20mA 10 14796 1 10 100 IF – Forward Current ( mA ) Figure 13. Current Transfer Ratio vs. Forward Current Rev. A3, 11–Jan–99 TCDT1120(G) Series Vishay Telefunken t on / t off – Turn on / Turn off Time ( m s ) CTR – Current Transfer Ratio ( % ) 1000 TCDT1123(G) VCE=5V 100 10 1 1 toff 20 10 ton 0 5 TCDT1124(G) VCE=5V 100 10 20 15 Figure 17. Turn on / off Time vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) 1000 10 IF – Forward Current ( mA ) 147800 Figure 14. Current Transfer Ratio vs. Forward Current CTR – Current Transfer Ratio ( % ) 30 100 10 IF – Forward Current ( mA ) 14797 1 50 TCDT1124(G) Saturated Operation VS=5V RL=1kW 40 toff 30 20 10 ton 0 0.1 1 100 10 IF – Forward Current ( mA ) 14798 TCDT1122(G) Saturated Operation VS=5V RL=1kW 30 toff 20 10 5 ton 10 20 15 IF – Forward Current ( mA ) Figure 18. Turn on / off Time vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) 50 40 0 147801 Figure 15. Current Transfer Ratio vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) TCDT1123(G) Saturated Operation VS=5V RL=1kW 40 0 0.1 0 20 TCDT1122(G) Non Saturated Operation VS=5V RL=100W 15 ton 10 toff 5 0 0 14799 50 5 10 15 20 IF – Forward Current ( mA ) Figure 16. Turn on / off Time vs. Forward Current Rev. A3, 11–Jan–99 0 147802 2 4 6 8 10 IC – Collector Current ( mA ) Figure 19. Turn on / off Time vs. Collector Current 231 TCDT1120(G) Series 20 t on / t off – Turn on / Turn off Time ( m s ) t on / t off – Turn on / Turn off Time ( m s ) Vishay Telefunken TCDT1123(G) Non Saturated Operation VS=5V RL=100W 15 10 ton 5 toff 0 TCDT1124(G) Non Saturated Operation VS=5V RL=100W 15 ton 10 toff 5 0 0 147803 20 2 4 6 8 10 IC – Collector Current ( mA ) 0 147804 Figure 20. Turn on / off Time vs. Collector Current 2 4 6 8 10 IC – Collector Current ( mA ) Figure 21. Turn on / off Time vs. Collector Current Type Date Code (YM) XXXXXX 918 A TK 63 0884 V D E Production Location Safety Logo 15090 Coupling System Indicator Company Logo Figure 22. Marking example 232 Rev. A3, 11–Jan–99 TCDT1120(G) Series Vishay Telefunken Dimensions of TCDT112.G in mm weight: ca. 0.50 g creepage distance: air path: 8 mm y y 8 mm after mounting on PC board 14771 Dimensions of TCDT112. in mm weight: 0.50 g creepage distance: air path: 6 mm y y 6 mm after mounting on PC board 14770 Rev. A3, 11–Jan–99 233