TCMD1000 / TCMD4000 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, Single/Quad Channel, Half Pitch Mini-Flat Package Features • • • • • • • Low profile package (half pitch) AC Isolation test voltage 3750 VRMS Low coupling capacitance of typical 0.3 pF Low temperature coefficient of CTR Wide ambient temperature range Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17298 C E 9 Agency Approvals • UL1577, File No. E76222 System Code M, Double Protection • CSA 22.2 bulletin 5A, Double Protection 1 2 A C 8 4 PIN 16 PIN e3 C Applications Pb Pb-free Programmable logic The elements provide a fixed distance between input and output for highest safety requirements. Modems Answering machines General applications Order Information Description Part The TCMD1000 / TCMD4000 consist of a photodarlington optically coupled to a gallium arsenide infrared-emitting diodes in either a 4 pin or 16 pin miniflat package. Remarks TCMD1000 CTR > 600 %, SMD-4 TCMD4000 CTR > 600 %, SMD-16 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 6 V Forward current IF 60 mA IFSM 1.5 A Pdiss 100 mW Tj 125 °C Forward surge current Power dissipation Junction temperature Document Number 83513 Rev. 1.6, 26-Oct-04 Test condition tp ≤ 10 µs Unit www.vishay.com 1 TCMD1000 / TCMD4000 Vishay Semiconductors Output Symbol Value Collector emitter voltage Parameter Test condition VCEO 35 V Emitter collector voltage VECO 7 V Collector current Collector peak current IC 80 mA ICM 100 mA Pdiss 150 mW Tj 125 °C tp/T = 0.5, tp ≤ 10 ms Power dissipation Unit Junction temperature Coupler Parameter Test condition AC isolation test voltage (RMS) Symbol Value Unit 1) 3750 VRMS VISO Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature Tsld 240 °C 1) Related to standard climate 23/50 DIN 50014 Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Typ. Max Forward voltage Parameter IF = 50 mA Test condition Symbol VF Min 1.25 1.6 Junction capacitance VR = 0 V, f = 1 MHz Cj 50 Unit V pF Output Symbol Min Collector emitter voltage Parameter IC = 100 µA Test condition VCEO 35 Typ. Max Unit V Emitter collector voltage IE = 100 µA VECO 7 V Collector dark current VCE = 10 V, IF = 0, E = 0 ICEO 100 nA Max Unit 0.3 V Coupler Parameter Test condition Symbol Min Typ. Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency IF = 10 mA, VCE = 5 V, RL = 100 Ω fc 10 kHz Coupling capacitance f = 1 MHz Ck 0.3 pF www.vishay.com 2 Document Number 83513 Rev. 1.6, 26-Oct-04 TCMD1000 / TCMD4000 Vishay Semiconductors Current Transfer Ratio Parameter Test condition IC/IF VCE = 2 V, IF = 1 mA Part Symbol Min Typ. TCMD1000 CTR 600 800 Max Unit % TCMD4000 CTR 600 800 % Switching Characteristics Parameter Test condition Symbol Min Typ. Max Unit Rise time VCE = 2 V, IC =10 mA, RL = 100 Ω (see figure 1) tr 300 µs Turn-off time VCE = 2 V, IC =10 mA, RL = 100 Ω (see figure 1) toff 250 µs IF 0 IF +VCC IF IC = 10 mA; 0 IC RG = 50 Ω tp = 0.01 T tp = 50 ms 96 11698 tp t 100% 90% Channel I Channel II 50 Ω RL Oscilloscope RI = 1 MΩ CI = 20 pF 10% 0 14779 tp td tr ton (= td + tr) Figure 1. Test circuit, non-saturated operation tr td ton ts pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) t tf toff storage time fall time turn-off time Figure 2. Switching Times Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1000.0 1.3 1.2 100.0 1.1 1.0 0.9 0.8 0 14389 I F – Forward Current ( mA ) VF – Forward Voltage ( V ) I F=10mA 20 40 60 80 Figure 3. Forward Voltage vs. Ambient Temperature Rev. 1.6, 26-Oct-04 1.0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 100 Tamb – Ambient Temperature (°C ) Document Number 83513 10.0 14390 V F – Forward Voltage ( V ) Figure 4. Forward Current vs. Forward Voltage www.vishay.com 3 TCMD1000 / TCMD4000 Vishay Semiconductors 100.0 V CE=5V I F=1mA 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.5 –30–20–10 0 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature (°C ) 0.2mA 1.0 0.1mA 14394 10000 V CE=10V I F=0 1000 100 10 1 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature (°C ) 14392 Figure 6. Collector Dark Current vs. Ambient Temperature V CE=2V 100.0 10.0 1.0 0.1 0.1 1.0 10.0 Figure 7. Collector Current vs. Forward Current www.vishay.com CTR=200% 1.0 100% 0.9 50% 25% 0.8 0.7 0.6 1 10 100 I C – Collector Current ( mA ) Figure 9. Collector Emitter Saturation Voltage vs. Collector Current 10000 V CE=2V 1000 100 10 0.1 100.0 I F – Forward Current ( mA ) 14393 1.1 14395 CTR – Current Transfer Ratio ( % ) 1000.0 1.0 10.0 100.0 V CE – Collector Emitter Voltage ( V ) Figure 8. Collector Current vs. Collector Emitter Voltage V CEsat – Collector Emitter Saturation Voltage (V) 100000 ICEO– Collector Dark Current, with open Base ( nA) 0.5mA 0.1 0.1 Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature IC – Collector Current ( mA ) 1mA 10.0 0.6 14391 4 I F=2mA IC – Collector Current ( mA ) CTRrel – Relative Current Transfer Ratio 1.5 14396 1.0 10.0 100.0 I F – Forward Current ( mA ) Figure 10. Current Transfer Ratio vs. Forward Current Document Number 83513 Rev. 1.6, 26-Oct-04 TCMD1000 / TCMD4000 Vishay Semiconductors Package Dimensions in mm 16283 Document Number 83513 Rev. 1.6, 26-Oct-04 www.vishay.com 5 TCMD1000 / TCMD4000 Vishay Semiconductors Package Dimensions in mm 15226 www.vishay.com 6 Document Number 83513 Rev. 1.6, 26-Oct-04 TCMD1000 / TCMD4000 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83513 Rev. 1.6, 26-Oct-04 www.vishay.com 7