VISHAY TCUT1200

TCUT1200
Vishay Telefunken
Subminiature Dual Channel Optical Sensor with
Phototransistor Output
Description
This device has a compact construction where the
emitting-light source and the detector are located
face-to-face on the same optical axes.
The operating wavelength is 950 nm. The detector
side incorporates 2 phototransistors. Distance of both
channels is 0.8 mm.
Applications
D Accurate position sensor for encoder,
D Detection for motion direction,
D Suitable for computer mouse and track-balls
14849
Features
D Dual channel with 0.3 mm aperture
D Channel 1 to channel 2 distance 0.8 mm
(optical center)
D Gap 2 mm
D Package height: 4 mm
D Surface Mountable Technology (SMD)
D Parts shipped taped and reeled 2000 pcs/ reel
D Soldering method according to CECC00802
Coll
A
Cath
E
Cath
E
13894
table 1, class B or C
Order Instruction
Ordering Code
TCUT1200
Document Number 83755
Rev. A7, 01–Jun–99
Resolution (mm) / Aperture (mm)
0.24
/
0.3
Remarks
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TCUT1200
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Test Conditions
tp ≤ 10 ms
Tamb ≤ 25°C
Symbol
VR
IF
IFSM
PV
Value
5
25
100
75
Unit
V
mA
mA
mW
Symbol
VCEO
VECO
IC
PV
Value
70
7
20
75
Unit
V
V
mA
mW
Symbol
Ptot
Tamb
Tstg
Tsd
Value
150
–40 to +85
–40 to +100
230
Unit
mW
°C
°C
°C
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Test Conditions
Tamb ≤ 25°C
Coupler
Parameter
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
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Test Conditions
Tamb ≤ 25°C
t≤5s
Document Number 83755
Rev. A7, 01–Jun–99
TCUT1200
Vishay Telefunken
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Reverse current
Junction capacitance
Test Conditions
IF = 15 mA
VR = 5 V
VR = 0 V, f = 1 MHz
Symbol
VF
IR
Cj
Min.
Test Conditions
IC = 1 mA
IE = 100 mA
VCE = 25 V, IF = 0, E = 0
Symbol
VCEO
VECO
ICEO
Min.
70
7
Test Conditions
VCE = 5 V, IF = 15 mA
Symbol
IC
Min.
300
IF = 15 mA, IC = 0.05 mA
VCEsat
Typ.
1.2
Max.
1.5
10
Unit
V
mA
pF
Typ.
Max.
10
100
Unit
V
V
nA
Typ.
500
Max.
Unit
mA
0.4
V
50
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector emitter cut-off
current
Coupler
Parameter
Collector current per
channel
Collector emitter
saturation voltage
Ptot – Total Power Dissipation ( mW )
200
IF = 15 mA
Sensor
150
100
74HCT14
50
Emitter / Detector
10 kW
VE
UQ
0
0
13664
+ VC = 5 V
25
50
75
100
GND
GND
13887
Tamb – Ambient Temperature ( °C )
Figure 1. Derating diagram
Document Number 83755
Rev. A7, 01–Jun–99
Figure 2. Application example
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TCUT1200
Vishay Telefunken
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
1000.0
1.3
VF – Forward Voltage ( V )
I F – Forward Current ( mA )
IF=15mA
1.2
100.0
10.0
1.0
1.1
1.0
0.9
0.1
0
VF – Forward Voltage ( V )
13660
20
40
60
80
100
1.0
IF=15mA
IC=50mA
0.9
0.120
0.100
0.080
0.060
0.040
0.020
0
–40
–20
0
20
40
60
80
IF=15mA
0.7
0.6
0.5
0.4
0.3
IF=5mA
0.2
0.1
0
–40
100
Tamb – Ambient Temperature ( °C )
13662
VCE=5V
0.8
IC – Collector Current ( mA )
0.140
10.000
–20
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
13663
Figure 4. Collector Emitter Saturation Voltage vs.
Ambient Temperature
Figure 7. Collector Current vs. Ambient Temperature
10000
ICEO– Collector Dark Current,
with open Base ( nA )
VCE=5V
IC – Collector Current ( mA )
0
Figure 6. Forward Voltage vs. Ambient Temperature
0.180
0.160
–20
Tamb – Ambient Temperature ( °C )
13661
Figure 3. Forward Current vs. Forward Voltage
VCEsat – Collector Emitter Saturation Voltage ( V )
0.8
–40
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1.000
0.100
0.010
0.001
0.1
13665
1000
100
10
1
1.0
10.0
100.0
IF – Forward Current ( mA )
Figure 5. Collector Current vs. Forward Current
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VCE=10V
IF=0
0
96 11875
10 20 30 40 50 60 70 80 90 100
Tamb – Ambient Temperature ( °C )
Figure 8. Collector Dark Current vs. Ambient Temperature
Document Number 83755
Rev. A7, 01–Jun–99
TCUT1200
Vishay Telefunken
I Crel – Relative Collector Current
1 .2 5
s
1 .0 0
0 .7 5
0 .5 0
0 .2 5
0
–1 . 5 –1 . 0 –0 . 5
0 .0
0 .5
1 .0
1 .5
s – Dis placement ( mm )
1 3 6 5 7
Figure 9. Relative Collector Current vs. Displacement
Packing
Dampproof packing
Products will be packed in anti-humidity aluminium bags to prevent the products from moisture absorption
during transportation and storage. Each bag contains a desiccant with moisture indicators. In the event bags
absorb moisture, the indicators change their color from blue to pink.
Recommended method of storage
Dry box storage is recommended to prevent the parts from moisture absorption. The following conditions
should be preserved if dry boxes are not available.
Storage temperature:
10 to 30°C
Storage humidity:
60% RH max
In case of moisture absorption the device will recover to the former condition by drying under the following
recommended conditions:
Taped version:
60°C/ 48 h
Untaped version:
60°C/ 48 h
Aluminium bag
Label
Reel
14940
Document Number 83755
Rev. A7, 01–Jun–99
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TCUT1200
Vishay Telefunken
Dimensions of TCUT1200 in mm
1 2 8 9 8
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Document Number 83755
Rev. A7, 01–Jun–99
TCUT1200
Vishay Telefunken
Dimensions of Reel and Shape in mm
1 3 7 2 2
Document Number 83755
Rev. A7, 01–Jun–99
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TCUT1200
Vishay Telefunken
Dimensions of Tape in mm
1 3 7 2 0
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Document Number 83755
Rev. A7, 01–Jun–99
TCUT1200
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 83755
Rev. A7, 01–Jun–99
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