TCUT1300X01 Vishay Semiconductors Subminiature Dual Channel Transmissive Optical Sensor with Phototransistor Outputs, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released Description The TCUT1300X01 is a compact transmissive sensor that includes an infrared emitter and two phototransistor detectors, located face-to-face in a surface mount package. Pin connection Top view Features • Product designed and qualified acc. AEC-Q101 for the automotive market • Package type: Surface mount • Detector type: Phototransistor • Dimensions: L 5.5 mm x W 4 mm x H 4 mm • Gap: 3 mm • • • • • • E Cath. E NC A Coll. 19534 e4 Aperture: 0.3 mm Channel distance (center to center): 0.8 mm Typical output current under test: IC = 0.6 mA Emitter wavelength: 950 nm Lead (Pb)-free soldering released Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC • Minimum order quantity: 2000 pcs, 2000 pcs/reel Applications • Automotive optical sensors • Accurate position sensor for encoder • Sensor for motion, speed and direction Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Coupler Parameter Power dissipation Test condition Tamb ≤ 25 °C Symbol Value Unit P 150 mW Ambient temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Tsd 260 °C Soldering temperature in accordance with fig. 15 Input (Emitter) Symbol Value Unit Reverse voltage Parameter Test condition VR 5 V Forward current IF 25 mA IFSM 200 mA PV 75 mW Symbol Value Unit Collector emitter voltage VCEO 20 V Emitter collector voltage VECO 7 V IC 20 mA PV 75 mW Forward surge current tp ≤ 10 µs Power dissipation Tamb ≤ 25 °C Output (Detector) Parameter Test condition Collector current Power dissipation Document Number 84756 Rev. 2.2, 10-May-07 Tamb ≤ 25 °C www.vishay.com 1 TCUT1300X01 Vishay Semiconductors P - Power Dissipation (mW) 200 Sensor 150 100 50 Emitter/Detector 0 0 16538 100 75 25 50 Tamb - Ambient Temperature (°C) Figure 1. Power Dissipation Limit vs. Ambient Temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Coupler Parameter Test condition Collector current per channel VCE = 5 V, IF = 15 mA Collector emitter saturation voltage IF = 15 mA, IC = 0.05 mA Symbol Min Typ. IC 300 600 VCEsat Max Unit µA 0.4 V Typ. Max Unit 1.2 1.4 V 10 µA Input (Emitter) Parameter Test condition Symbol Forward voltage IF = 15 mA VF Reverse current VR = 5 V IR Junction capacitance VR = 0 V, f = 1 MHz Cj Min 25 pF Output (Detector) Parameter Symbol Min IC = 1 mA VCEO 20 Emitter collector voltage IE = 100 µA VECO 7 Collector dark current VCE = 25 V, IF = 0, E = 0 ICEO Collector emitter voltage IC Test condition Typ. Max Unit V V 1 100 nA Switching Characteristics Typ. Max Unit Rise time Parameter IC = 0.3 mA, VCE = 5 V, RL = 100 Ω (see figure 2) tr 20.0 150 µs Fall time IC = 0.3 mA, VCE = 5 V, RL = 100 Ω (see figure 2) tf 30.0 150 µs www.vishay.com 2 Test condition Symbol Min Document Number 84756 Rev. 2.2, 10-May-07 TCUT1300X01 Vishay Semiconductors IF IF 0 0 IC +5V IF IC adjusted by I F Channel I Oscilloscope Channel II RL CL 100 Ω t 100 % 90 % RG = 50 Ω tp = 20 T tp = 1 ms 50 Ω tp 1M 20 pF 20688 10 % 0 tp td tr t on (= t d + tr) tr td t on ts pulse duration delay time rise time turn-on time ts tf t off (= t s +t f ) t tf t off storage time fall time turn-off time 96 11698 Figure 2. Test Circuit for tr and tf Figure 3. Switching Times Typical Characteristics Tamb = 25 °C, unless otherwise specified 10 IC - Collector Current (mA) IF - Forward Current (mA) 1000 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1 20589 VF - Forward Voltage (V) 1 10 100 IF - Forward Current (mA) Figure 6. Collector Current vs. Forward Current 1.4 10 IF = 15 mA 1.3 1.2 1.1 IC - Collector Current (mA) VF - Forward Voltage (V) 0.01 20591 Figure 4. Forward Current vs. Forward Voltage 1.0 - 40 0.1 0.001 0.1 1.2 1.4 1.6 1.8 2 2.2 VCE = 5 V 1 IF = 25 mA 1 IF = 15 mA IF = 5 mA 0.1 IF = 3 mA 0.01 - 20 20592 0 20 40 60 80 Tamb - Ambient Temperature (°C) Figure 5. Forward Voltage vs. Ambient Temperature Document Number 84756 Rev. 2.2, 10-May-07 0.1 100 20689 1 10 100 VCE - Collector Emitter Voltage (V) Figure 7. Collector Current vs. Collector Emitter Voltage www.vishay.com 3 TCUT1300X01 Vishay Semiconductors 1 IC = 50 µA 0.18 0.16 IF = 5 mA 0.14 0.12 0.10 IF = 15 mA 0.08 0.06 0.04 0.02 0.00 - 40 - 20 0 20 40 60 80 s 0.8 0.6 0.4 0.2 0 - 1.5 100 -1 20595 Tamb - Ambient Tempearture (°C) 20590 IC rel - Relative Collector Current VCEsat - Coll. Emitter Saturation Voltage (V) 0.20 Figure 8. Collector Emitter Saturation Voltage vs. Ambient Temperature - 0.5 0 IF = 15 mA 0.5 0.4 0.3 IF = 5 mA 0.2 0.1 0.0 - 40 S ICrel - Rel. Collector Current 0.6 1 ± 0.2 IC - Collector Current (mA) 1.5 1 VCE = 5 V Optical Axis 0.5 0 - 20 20593 0 20 40 60 80 - 1.5 100 Tamb - Ambient Temperature (°C) Figure 9. Collector Current vs. Ambient Temperature -1 - 0.5 0 0.5 1 1.5 S - Vertical Displacement (mm) 20610 Figure 12. Relative Collector Current vs. Vertical Displacement 10000 100 90 IF = 0 tr/tf - Rise/Fall Time (µs) ICE0 - Collector Dark Current (nA) 1 Figure 11. Relative Collector Current vs. Horizontal Displacement 0.7 1000 VCE = 70 V VCE = 25 V VCE = 5 V 100 10 80 RL = 100 Ω 70 60 50 40 tf 30 tr 20 10 1 0 0 20594 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Figure 10. Collector Dark Current vs. Ambient Temperature www.vishay.com 4 0.5 s - Horizontal Displacement 0 20599 250 500 750 1000 1250 1500 1750 2000 IC - Collector Current (µA) Figure 13. Rise/Fall Time vs. Collector Current Document Number 84756 Rev. 2.2, 10-May-07 TCUT1300X01 Vishay Semiconductors Floor Life IF = 15 mA + VC = 5 V Level 1, acc. JEDEC, J-STD-020. No time limit. Reflow Solder Profile 300 74HCT14 VE UQ 13887 GND Temperature (°C) 10 kΩ 200 max. 30 s 150 max. 100 s max. 120 s 100 max. Ramp Down 6 °C/s max. Ramp Up 3 °C/s 50 Figure 14. Application example max. 260 °C 245 °C 255 255°C°C 240 °C 217 °C 250 0 0 19841 50 100 150 200 250 300 Time (s) Figure 15. Lead (Pb)-free Reflow Solder Profile acc. J-STD-020C Package Dimensions in millimeters 19536 Document Number 84756 Rev. 2.2, 10-May-07 www.vishay.com 5 TCUT1300X01 Vishay Semiconductors Package Dimensions in millimeters www.vishay.com 6 Document Number 84756 Rev. 2.2, 10-May-07 TCUT1300X01 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 84756 Rev. 2.2, 10-May-07 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1