TG2216TU TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2216TU RF SPDT Switch Antenna switches for Bluetooth Class1, wireless LAN and PHS Filter switching for mobile communication Features · Low insertion Loss: LOSS = 0.5dB (typ.) @1.0 GHz · High isolation: ISL = 25dB (typ.) @1.0 GHz · High linearly: Pi1dB = 28dBmW (typ.) @2.5 GHz · Low voltage operation: VCON = 0 V/2.7 V · Small package: UF6 package (2.0 × 2.1 × 0.7 mm) = 0.7dB (typ.) @2.5 GHz = 23dB (typ.) @2.5 GHz Weight: 0.007g (typ.) Pin Connection and Marking (top view) VC1 6 RFcom 5 Equivalent Circuit VC2 4 VC1 6 RFcom 5 VC2 4 3 RF2 1 RF1 2 GND 3 RF2 US 1 RF1 2 GND Maximum Ratings (Ta = 25°C) Characteristics Control voltage Input power Total power dissipation Symbol Rating VC1 6 VC2 6 Pi 1 W 100 mW PD (Note) Unit V Operating temperature range Topr −40 to 85 °C Storage temperature range Tstg −55 to 125 °C Note: 2 When mounted on the glass epoxy of 2.5 cm × 1.6 t 1 2003-03-20 TG2216TU Electrical Characteristics (VCON(Hi) = 2.7 V, VCON(LO) = 0 V, Ta = 25°C, Zg = Zl = 50 W) Symbol Test Circuit LOSS (1) 1 LOSS (2) Characteristics Min Typ. Max f = 1.0 GHz, Pi = 0dBmW ¾ 0.5 0.8 1 f = 2.0 GHz, Pi = 0dBmW ¾ 0.6 0.9 LOSS (3) 1 f = 2.5 GHz, Pi = 0dBmW ¾ 0.7 1.0 ISL (1) 1 f = 1.0 GHz, Pi = 0dBmW 22 25 ¾ ISL (2) 1 f = 2.0 GHz, Pi = 0dBmW 22 24 ¾ ISL (3) 1 f = 2.5 GHz, Pi = 0dBmW 20 23 ¾ Input power at 1dB gain compression Pi1dB 1 f = 2.5 GHz 25 28 ¾ dBmW Control current ICON ¾ no RF signal input ¾ ¾ 0.01 mA Switching time tsw 1 f = 100 MHz, Pi = 0dBmW ¾ 50 200 ns Insertion loss Isolation Test Condition Unit dB dB Switch Connection VC1 VC2 Switch Condition RFcom – RF1 RFcom – RF2 OFF ON ON OFF RF2 Hi Low RFcom RF1 RF2 Low Hi RFcom RF1 Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. 2 2003-03-20 TG2216TU Pin Information Pin Symbol Description 1 RF1 RF port. When VC1 = Hi and VC2 = Lo, this port is connected to RFcom. An external DC blocking capacitor (C1) is required for internal DC bias blocking. 2 GND GND port. The distance between this pin and ground pattern should be as short as possible for RF performance. 3 RF2 RF port. When VC1 = Lo and VC2 = Hi, this port is connected to RFcom. An external DC blocking capacitor (C1) is required for internal DC bias blocking. 4 VC2 Control port. Switching operation is controlled by the voltage of this port. The bypass capacitor (C2) is required. 5 RFcom 6 VC1 Common RF port. Switching this port to RF1 or RF2 is controlled by “VC1” and “VC2” voltage. An external DC blocking capacitor (C1) is required for internal DC bias blocking. Control port. Switching operation is controlled by the voltage of this port. The bypass capacitor (C2) is required. Test Circuit 1 (RF Test Circuit) RFcom C1 VC1 VC2 C2 C2 Top view RF1 C1 C1 RF2 C1: 56 pF C2: 10 pF GND The values of capacitors depends on the application frequency range and the board pattern layout. This should be considered for Board design and external components. Please refer to the Recommend External Parts Table below. Reference External Parts 50 MHz to 300 MHz 300 MHz to 500 MHz 0.5 GHz to 2.5 GHz Ｃ1 1000 pF 100 pF 56 pF Ｃ2 100 pF 10 pF 10 pF 3 2003-03-20 TG2216TU Test Board RFcom C1 VC1 C2 VC2 C2 RF1 C1 C1 RF2 TIM30-T-01 Notice The circuits and measurements contained in this document are given only in the context of as examples of applications for these products. Moreover, these example application circuits are not intended for mass production, since the high-frequency characteristics (the AC characteristics) of these devices will be affected by the external components which the customer uses, by the design of the circuit and by various other conditions. It is the responsibility of the customer to design external circuits which correctly implement the intended application, and to check the characteristics of the design. TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications. 4 2003-03-20 TG2216TU LOSS – Pi (RFcom – RF2) 0.5 0.5 1 1 (dB) 0 1.5 LOSS2 LOSS1 (dB) LOSS – Pi (RFcom – RF1) 0 2 2 2.5 Insertion loss Insertion loss 2.5 1.5 3 3.5 VC1 = 0 V 4 VC2 = 2.7 V 4.5 RF2 = 50 W f = 2.5 GHz 5 0 10 20 Input power Pin 30 3 3.5 VC1 = 2.7 V 4 VC2 = 0 V 4.5 RF1 = 50 W f = 2.5 GHz 5 0 10 40 (dBmW) 20 Input power Pin ISL – Pi (RFcom – RF1) 30 (dBmW) ISL – Pi (RFcom – RF2) 0 0 VC1 = 2.7 V ISL (dB) f = 2.5 GHz 10 15 20 25 f = 2.5 GHz 10 15 20 25 30 0 10 20 Input power Pin 30 30 0 40 (dB) 0 0.5 LOSS 1.0 1.5 2.0 Insertion loss (dB) LOSS 0 2.5 3.0 3.5 4.0 VC2 = 2.7 V RF2 = 50 W 1.0 Frequency f 2.0 20 30 40 (dBmW) LOSS – f (RFcom – RF2) 0.5 VC1 = 0 V 10 Input power Pin (dBmW) LOSS – f (RFcom – RF1) Insertion loss VC2 = 2.7 V RF1 = 50 W 5 Isolation ISL (dB) Isolation VC1 = 0 V VC2 = 0 V RF2 = 50 W 5 0 40 3.0 1.0 1.5 2.0 2.5 3.0 3.5 VC1 = 2.7 V 4.0 VC2 = 0 V RF1 = 50 W 0 (GHz) 1.0 Frequency f 5 2.0 3.0 (GHz) 2003-03-20 TG2216TU ISL – f (RFcom – RF2) 0 10 20 20 ISL (dB) 0 10 30 40 Isolation Isolation ISL (dB) ISL – f (RFcom – RF1) 50 60 30 40 50 60 70 VC1 = 2.7 V 70 VC1 = 0 V 80 VC2 = 0 V RF2 = 50 W 80 VC2 = 2.7 V RF1 = 50 W 1.0 0 2.0 Frequency f 3.0 1.0 0 (GHz) Frequency f 3.0 (GHz) ISL – f (RF1 – RF2) 0 10 20 20 ISL (dB) 0 10 30 40 Isolation Isolation ISL (dB) ISL – f (RF1 – RF2) 50 60 70 VC1 = 2.7 V VC2 = 0 V 80 RFcom = 50 W 30 40 50 60 70 VC1 = 0 V VC2 = 2.7 V 80 RFcom = 50 W 1.0 0 2.0 2.0 Frequency f 3.0 0 (GHz) 1.0 2.0 Frequency f Switching Time (RF1: RAISE) 3.0 (GHz) Switching Time (RF1: FALL) 26.2 ns 24.3 ns VC VC RF1 RF1 Time (20 ns/div) Time (20 ns/div) 6 2003-03-20 TG2216TU Switching Time (RF2: RAISE) Switching Time (RF2: FALL) 22.5 ns 25.8 ns VC VC RF2 RF2 Time (20 ns/div) Time (20 ns/div) 7 2003-03-20 TG2216TU Package Dimensions UF6 Weight: 0.007 g (typ.) 8 2003-03-20 TG2216TU RESTRICTIONS ON PRODUCT USE 020704EAC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium Arsenide (GaAs) is a substance used in the products described in this document. GaAs dust or vapor is harmful to the human body. Do not break , cut, crush or dissolve chemically. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2003-03-20