TRIQUINT TGF1350-SCC

Product Data Sheet
Discrete MESFET
TGF1350-SCC
Key Features and Performance
•
•
•
•
•
0.5 um x 300 um FET
1.5 dB Noise Figure with 11dB
Associated Gain at 10 GHz
2.5 dB Noise Figure with 7 dB
Associated Gain at 18 GHz
All-gold Metallization for High Reliability
Recessed Gate Structure
Description
The TriQuint TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used
for low-noise applications DC to 18 GHz. Bond pad is gold plated for compatibility
with thermocompression and thermosonic compatibility wire-bonding processes.
The TGF1350-SCC is readily assembled using automated equipment. Die attach
should be accomplished with conductive epoxy only. Eutectic attach is not
recommended .
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
1
Product Data Sheet
TGF1350-SCC
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
2
Product Data Sheet
TGF1350-SCC
TYPICAL S-PARAMETERS
Frequency
(GHz)
S 11
MAG
S 21
S 12
S 22
ANG (°)
MAG
ANG (°)
MAG
ANG (°)
MAG
ANG (°)
2 .0
0 .9 8
- 28
3 .2 2
157
0 .0 3
75
0 .7 1
- 12
2 .5
0 .9 6
- 36
3 .1 7
151
0 .0 4
71
0 .7 1
- 14
3 .0
0 .9 3
- 44
3 .0 7
146
0 .0 4
68
0 .7 1
- 14
3 .5
0 .9 3
- 51
2 .9 9
141
0 .0 5
65
0 .6 9
- 16
4 .0
0 .9 0
- 56
2 .8 8
137
0 .0 5
62
0 .6 8
- 17
4 .5
0 .8 9
- 60
2 .7 8
133
0 .0 5
61
0 .6 8
- 19
5 .0
0 .8 8
- 64
2 .7 3
129
0 .0 6
60
0 .6 7
- 24
5 .5
0 .8 7
- 67
2 .6 5
125
0 .0 6
58
0 .6 6
- 28
6 .0
0 .8 5
- 70
2 .5 5
121
0 .0 6
56
0 .6 6
- 30
6 .5
0 .8 3
- 74
2 .4 6
118
0 .0 6
55
0 .6 6
- 31
7 .0
0 .8 2
- 77
2 .3 6
116
0 .0 6
54
0 .6 6
- 32
7 .5
0 .8 2
- 80
2 .2 8
113
0 .0 6
54
0 .6 6
- 32
8 .0
0 .8 1
- 82
2 .2 2
110
0 .0 6
53
0 .6 6
- 33
8 .5
0 .8 1
- 85
2 .1 5
107
0 .0 6
52
0 .6 5
- 34
9 .0
0 .8 0
- 88
2 .1 2
104
0 .0 6
51
0 .6 5
- 38
9 .5
0 .7 9
- 92
2 .0 8
101
0 .0 6
51
0 .6 5
- 40
1 0 .0
0 .7 8
- 96
2 .0 5
98
0 .0 6
51
0 .6 5
- 43
1 0 .5
0 .7 8
- 99
2 .0 2
95
0 .0 6
50
0 .6 5
- 45
1 1 .0
0 .7 7
- 103
2 .0 0
92
0 .0 6
48
0 .6 5
- 48
1 1 .5
0 .7 8
- 106
1 .9 6
88
0 .0 6
46
0 .6 5
- 51
1 2 .0
0 .7 7
- 110
1 .9 0
84
0 .0 6
44
0 .6 5
- 54
1 2 .5
0 .7 7
- 114
1 .8 4
81
0 .0 6
42
0 .6 4
- 56
1 3 .0
0 .7 6
- 117
1 .7 9
79
0 .0 6
39
0 .6 4
- 58
1 3 .5
0 .7 5
- 120
1 .7 4
76
0 .0 6
37
0 .6 4
- 60
1 4 .0
0 .7 5
- 123
1 .6 9
73
0 .0 7
35
0 .6 4
- 64
1 4 .5
0 .7 4
- 125
1 .6 4
69
0 .0 7
32
0 .6 4
- 69
1 5 .0
0 .7 4
- 128
1 .5 6
65
0 .0 7
29
0 .6 5
- 74
1 5 .5
0 .7 4
- 131
1 .4 9
61
0 .0 7
25
0 .6 6
- 78
1 6 .0
0 .7 3
- 133
1 .4 3
59
0 .0 8
23
0 .6 5
- 81
1 6 .5
0 .7 2
- 136
1 .3 8
57
0 .0 8
21
0 .6 5
- 81
1 7 .0
0 .7 3
- 139
1 .3 6
54
0 .0 8
21
0 .6 6
- 81
1 7 .5
0 .7 3
- 140
1 .3 1
52
0 .0 9
22
0 .6 6
- 82
1 8 .0
0 .7 4
- 142
1 .2 6
50
0 .0 9
22
0 .6 6
- 83
TA = 25oC, VDS = 3 V, IDS = 15mA
Reference planes for S-parameter data are located at center of gate and drain bond
pads. Three 0.7 mil diameter wires, approximately 13 mils long, are bonded from the
center of each of the source pads to ground. The S-parameters are also available on
floppy disk and the world wide web.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
3
Product Data Sheet
TGF1350-SCC
RF CHARACTERISTICS
P ARAMETER
TES T CONDITIONS
TYP
NF MIN
Min im u m n o is e fig u re
1 0 GHz
1 .5
GA
As s o ciat ed g ain
1 8 GHz
1 0 GHz
2 .5
11
1 8 GHz
7
UNIT
dB
VDS = 3 V, IDS = 15mA, TA = 25OC
DC CHARACTERISTICS
P ARAMETER
TES T CONDITIONS
MIN
TYP
MAX UNIT
V (BR)GDO Gat e–d rain b reak d o wn vo lt ag e
I GS = 1 .0 m A p er m m
- 6
V
V (BR)GSO Gat e–s o u rce b reak d o wn vo lt ag e
I GD = 1 .0 m A p er m m
- 6
V
V GS(OFF)
I DSS
Gat e–s o u rce cu t o ff (p in ch –o ff)
vo lt ag e
Zero –g at e–vo lt ag e d rain cu rren t
at s at u rat io n
GM
DC t ran s co n d u ct an ce
V DS = V DSS*
I D = 0 .5 m A p er m m
V DS = 0 .5 V t o 3 .5 V**
- 0 .5 - 1 .2 - 3
V
30
50
100
mA
40
50
78
mA
V GS = 0
V DS = 0 .5 V t o V DSS*
V GS = - 0 .2 5 V
TA = 25OC
*VDSS = VDS @ IDSS
**VDS for IDSS is the drain voltage between 0.5V and 3.5V at which drain current is highest.
EQUIVALENT SCHEMATIC
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
4
Product Data Sheet
TGF1350-SCC
TYPICAL MODEL
PARAMETERS
P ARAMETER
VALUE
S TANDARD
DEVIATION
UNIT
rs
So u rce res is t an ce
5 .6 2
0 .6
Ω
rd
Drain res is t an ce
4 .4 8
0 .4
Ω
rg
Gat e res is t an ce
4 .6 8
0 .5
gm
Tran s co n d u ct an ce
5 2 .3 2
6
Ω
mS
rds
Drain –t o –s o u rce res is t an ce
224
40
Ω
In p u t res is t an ce
1 .3 0
1
0 .3 5 1
0 .0 2 7
Ω
pF
ri
Cgs
Gat e–t o –s o u rce cap acit an ce
Cgd
Gat e–t o –d rain cap acit an ce
0 .0 1 5 9
0 .0 0 3 7
pF
Cds
Drain –t o –s o u rce cap acit an ce
0 .0 8 7 7
0 .0 0 9 5
pF
2 .3 3
0 .1
ps
τ
Tim e co n s t an t
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.
5
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com