VISHAY TLHY5205

TLHG / R / Y520.
VISHAY
Vishay Semiconductors
High Efficiency LED, ∅ 5 mm Tinted Non-Diffused Package
Description
The TLH.52.. series was developed for standard
applications like general indicating and lighting purposes.
It is housed in a 5 mm tinted non-diffused plastic
package. The small viewing angle of these devices
provides a high brightness.
Several selection types with different luminous intensities are offered. All LEDs are categorized in luminous intensity groups. The green and yellow LEDs
are categorized additionally in wavelength groups.
That allows users to assemble LEDs with uniform
appearance.
Features
•
•
•
•
•
•
•
•
•
Choice of three bright colors
Standard T-1¾ package
Small mechanical tolerances
Suitable for DC and high peak current
Small viewing angle
Luminous intensity categorized
Yellow and green color categorized
TLH.52.. with stand-offs
Lead-free device
19223
e2 Pb
Pb-free
Applications
Status lights
OFF / ON indicator
Background illumination
Readout lights
Maintenance lights
Legend light
Parts Table
Part
Color, Luminous Intensity
Angle of Half Intensity (±ϕ)
Technology
TLHR5200
Red, IV = 20 mcd (typ.)
14 °
GaAsP on GaP
TLHR5201
Red, IV = 30 mcd (typ.)
14 °
GaAsP on GaP
TLHR5205
Red, IV = 40 mcd (typ.)
14 °
GaAsP on GaP
TLHY5200
Yellow, IV = 30 mcd (typ.)
14 °
GaAsP on GaP
TLHY5201
Yellow, IV = 40 mcd (typ.)
14 °
GaAsP on GaP
TLHY5205
Yellow, IV = 50 mcd (typ.)
14 °
GaAsP on GaP
TLHG5200
Green, IV = 30 mcd (typ.)
14 °
GaP on GaP
TLHG5201
Green, IV = 40 mcd (typ.)
14 °
GaP on GaP
TLHG5205
Green, IV = 50 mcd (typ.)
14 °
GaP on GaP
Document Number 83011
Rev. 1.4, 31-Aug-04
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TLHG / R / Y520.
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLHR52.. , TLHY52.. ,TLHG52.. ,
Parameter
Test condition
Symbol
Value
VR
6
V
IF
30
mA
Reverse voltage
DC Forward current
Tamb ≤ 65 °C
Surge forward current
tp ≤ 10 µs
Power dissipation
Tamb ≤ 65 °C
Unit
IFSM
1
A
PV
100
mW
Tj
100
°C
Operating temperature range
Tamb
- 20 to + 100
°C
Storage temperature range
Tstg
- 55 to + 100
°C
Tsd
260
°C
RthJA
350
K/W
Junction temperature
Soldering temperature
t ≤ 5 s, 2 mm from body
Thermal resistance junction/
ambient
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLHR52..
Parameter
Luminous intensity
1)
Test condition
IF = 10 mA
Part
Symbol
Min
Typ.
TLHR5200
IV
10
20
mcd
TLHR5201
IV
16
30
mcd
TLHR5205
IV
25
40
mcd
612
Dominant wavelength
IF = 10 mA
λd
Peak wavelength
IF = 10 mA
λp
635
625
Angle of half intensity
IF = 10 mA
ϕ
± 14
Forward voltage
IF = 20 mA
VF
2
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
1)
6
Max
Unit
nm
nm
deg
3
V
15
V
50
pF
in one Packing Unit IVmin/IVmax ≤ 0.5
Yellow
TLHY52..
Parameter
Luminous intensity
1)
Test condition
IF = 10 mA
Part
Symbol
Min
Typ.
TLHY5200
IV
10
30
Max
mcd
Unit
TLHY5201
IV
16
40
mcd
TLHY5205
IV
25
50
mcd
581
Dominant wavelength
IF = 10 mA
λd
Peak wavelength
IF = 10 mA
λp
585
nm
Angle of half intensity
IF = 10 mA
ϕ
± 14
deg
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
1)
2.4
6
3
nm
V
15
V
50
pF
in one Packing Unit IVmin/IVmax ≤ 0.5
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594
Document Number 83011
Rev. 1.4, 31-Aug-04
TLHG / R / Y520.
VISHAY
Vishay Semiconductors
Green
TLHG52..
Parameter
Luminous intensity
Test condition
IF = 10 mA
1)
Part
Symbol
Min
Typ.
TLHG5200
IV
16
30
Max
mcd
Unit
TLHG5201
IV
25
40
mcd
TLHG5205
IV
40
50
562
mcd
Dominant wavelength
IF = 10 mA
λd
Peak wavelength
IF = 10 mA
λp
565
nm
Angle of half intensity
IF = 10 mA
ϕ
± 14
deg
Forward voltage
IF = 20 mA
VF
2.4
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
1)
575
6
3
nm
V
15
V
50
pF
in one Packing Unit IVmin/IVmax ≤ 0.5
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10000
Tamb ≤ 85 °C
IF – Forward Current ( mA )
PV - Power Dissipation ( mW )
125
100
75
50
25
1000
20
40
60
80
0.1
100
1
10
95 10918
0.1
1
Figure 3. Forward Current vs. Pulse Length
0°
I v rel - Relative Luminous Intensity
I F - Forward Current ( mA )
60
50
40
30
20
10
0
0
95 10046
20
40
60
80
Figure 2. Forward Current vs. Ambient Temperature
Document Number 83011
Rev. 1.4, 31-Aug-04
10 °
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
100
Tamb − Ambient Temperature ( °C )
100
10
tp – Pulse Length ( ms )
95 10025
Figure 1. Power Dissipation vs. Ambient Temperature
0.2
0.5
1
0.01
100
Tamb − Ambient Temperature ( °C )
0.02
0.05
0
0
t p /T = 0.01
0.4
0.2
0
0.2
0.4
0.6
95 10044
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
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TLHG / R / Y520.
VISHAY
Vishay Semiconductors
I v rel - Relative Luminous Intensity
I F - Forward Current ( mA )
1000
Red
100
t p /T = 0.001
t p = 10 µs
10
1
Red
1
0.1
0.01
0.1
0
2
4
6
8
I F - Forward Current ( mA )
Figure 8. Relative Luminous Intensity vs. Forward Current
I V re l - Relative Luminous Intensity
0.8
0.4
I F = 10 mA
0
0
20
40
60
80
Red
1.0
0.8
0.6
0.4
0.2
0
590
100
Tamb - Ambient Temperature ( °C )
95 10027
630
650
670
690
λ -ı Wavelength ( nm )
Figure 9. Relative Intensity vs. Wavelength
1000
2.4
Red
I F - Forward Current ( mA )
I V re l - Relative Luminous Intensity
610
95 10040
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
2.0
1.6
1.2
0.8
0.4
Yellow
100
t p /T = 0.001
t p = 10 µs
10
1
0.1
0
10
20
50
100
200
500 I F (mA)
1
0.5
0.2
0.1
0.05
0.02
tp /T
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
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4
100
1.2
Red
1.2
95 10321
10
95 10029
Figure 5. Forward Current vs. Forward Voltage
1.6
1
10
V F - Forward Voltage ( V )
95 10026
I v rel - Relative Luminous Intensity
10
0
95 10030
2
4
6
8
10
V F - Forward Voltage ( V )
Figure 10. Forward Current vs. Forward Voltage
Document Number 83011
Rev. 1.4, 31-Aug-04
TLHG / R / Y520.
VISHAY
1.6
1.2
Yellow
IVrel - Relative Luminous Intensity
I v rel - Relative Luminous Intensity
Vishay Semiconductors
1.2
0.8
0.4
0
I F = 10 mA
0
20
40
60
80
0.8
0.6
0.4
0.2
0
550
100
Tamb - Ambient Temperature ( °C )
95 10031
Yellow
1.0
I F - Forward Current ( mA )
I v rel - Relative Luminous Intensity
650
1.6
1.2
0.8
0.4
10
20
50
100
200
500 I F (mA)
1
0.5
0.2
0.1
0.05
0.02
tp /T
Green
100
t p /T = 0.001
t p = 10 µs
10
1
0.1
0
Yellow
1
0.1
1.6
10
Figure 13. Relative Luminous Intensity vs. Forward Current
Document Number 83011
Rev. 1.4, 31-Aug-04
8
10
Green
0.8
0.4
100
I F - Forward Current ( mA )
6
1.2
0
0.01
1
4
Figure 15. Forward Current vs. Forward Voltage
I v rel - Relative Luminous Intensity
10
2
V F - Forward Voltage ( V )
95 10034
Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
I v rel - Relative Luminous Intensity
630
1000
Yellow
2.0
95 10033
610
Figure 14. Relative Intensity vs. Wavelength
2.4
95 10260
590
λ - Wavelength
( nm )
95 10039
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
0
570
95 10035
I F = 10 mA
0
20
40
60
80
100
T amb - Ambient Temperature ( ° C )
Figure 16. Rel. Luminous Intensity vs. Ambient Temperature
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TLHG / R / Y520.
VISHAY
Vishay Semiconductors
I v rel - Specific Luminous Intensity
2.4
Green
2.0
1.6
1.2
0.8
0.4
0
95 10263
10
1
20
0.5
50
0.2
100
0.1
500 IF(mA)
0.02 tp/T
200
0.05
I v rel - Relative Luminous Intensity
Figure 17. Specific Luminous Intensity vs. Forward Current
10
Green
1
0.1
1
10
100
I F - Forward Current ( mA )
95 10037
Figure 18. Relative Luminous Intensity vs. Forward Current
IVrel - Relative Luminous Intensity
1.2
Green
1.0
0.8
0.6
0.4
0.2
0
520
540
560
580
600
620
λ - Wavelength
( nm )
95 10038
Figure 19. Relative Intensity vs. Wavelength
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Document Number 83011
Rev. 1.4, 31-Aug-04
VISHAY
TLHG / R / Y520.
Vishay Semiconductors
Package Dimensions in mm
95 11260
Document Number 83011
Rev. 1.4, 31-Aug-04
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TLHG / R / Y520.
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83011
Rev. 1.4, 31-Aug-04