TLP227G(N),TLP227G-2(N) TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP227G(N),TLP227G-2(N) CORDLESS TELEPHONE PBX MODEM Unit: mm TLP227G The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic DIP package. The TLP227G series are a bi-directional switch, which can replace mechanical relays in many applications. FEATURES · TLP227G : 4 pin DIP (DIP4), 1 Channel Type (1 Form A) · TLP227G-2 : 8 pin DIP (DIP8), 2 Channel Type (2 Form A) · Peak Off-State Voltage : 350 V (MIN.) · Trigger LED Current : 3 mA (MAX.) · On-State Current : 120 mA (MAX.) · On-State Resistance : 25 Ω (MAX.) · Isolation Voltage : 2500 Vrms (MIN.) TOSHIBA Weight: 0.26 g 1 Form A 11-5B2 4 3 1 2 PIN CONFIGURATION (TOP VIEW) TLP227G TLP227G-2 Unit: mm 1 4 1 8 TLP227G-2 2 3 1 : ANODE 2 : CATHODE 3 : DRAIN 4 : DRAIN 2 7 3 6 4 5 1, 3 : ANODE 2, 4 : CATHODE 5 : DRAIN D1 6 : DRAIN D2 7 : DRAIN D3 8 : DRAIN D4 1 TOSHIBA Weight: 0.54 g 2 Form A 11-10C4 8 7 6 5 1 2 3 4 2003-01-28 TLP227G(N),TLP227G-2(N) INTERNAL CIRCUIT 1 4 2 3 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Forward Current Forward Current Derating (Ta > = 25°C) SYMBOL RATING UNIT IF 50 mA -0.5 mA/°C IFP 1 A Reverse Voltage VR 5 V Junction Temperature Tj 125 °C VOFF 350 V ION 120 mA DION/°C -1.2 mA/°C Tj 125 °C Storage Temperature Range Tstg -55~125 °C Operating Temperature Range Topr -40~85 °C Lead Soldering Temperature (10 s) Tsol 260 °C BVS 2500 Vrms LED DIF/°C Peak Forward Current (100ms pulse, 100 pps) Off-State Output Terminal Voltage DETECTOR TLP227G On-State Current One Channel TLP227G-2 Both Channel (Note 1) TLP227G On-State Current Derating (Ta > = 25°C) One Channel TLP227G-2 Both Channel (Note 1) Junction Temperature Isolation Voltage (AC, 1 minute, R.H. < = 60%) (Note 2) (Note 1) :Two channels operating simultaneously. (Note 2):Device considered a two-terminal device : LED side pins shorted together, and shorted together. DETECTOR side pins RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT Supply Voltage VDD ¾ ¾ 280 V Forward Current IF 5 7.5 25 mA On-State Current ION ¾ ¾ 120 mA Operating Temperature Topr -20 ¾ 65 °C 2 2003-01-28 TLP227G(N),TLP227G-2(N) INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25°C) DETECTOR LED CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse Current IR VR = 5 V ¾ ¾ 10 mA Capacitance CT V = 0, f = 1 MHz ¾ 30 ¾ pF Off-State Current IOFF VOFF = 350 V ¾ ¾ 1 mA Capacitance COFF V = 0, f = 1 MHz ¾ 40 ¾ pF MIN. TYP. MAX. UNIT COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Trigger LED Current IFT ION = 120 mA ¾ 1 3 mA Close LED Current IFC IOFF = 100 mA 0.1 ¾ ¾ mA On-State Resistance RON ION = 120 mA, IF = 5 mA ¾ 14 25 W MIN. TYP. MAX. UNIT 0.8 ¾ pF ¾ W ISOLATION CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL Capacitance Input to Output Isolation Resistance TEST CONDITION CS VS = 0 V, f = 1 MHz RS VS = 500 V, R.H. < = 60% ¾ 10 5 ´ 10 BVS 10 2500 ¾ ¾ AC, 1 second (in oil) ¾ 5000 ¾ DC, 1 minute (in oil) ¾ 5000 ¾ Vdc MIN. TYP. MAX. UNIT ¾ 0.3 1 ¾ 0.1 1 AC, 1 minute Isolation Voltage 14 Vrms SWITCHING CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL Turn-on Time tON Turn-off Time TEST CONDITION RL = 200 W VDD = 20 V, IF = 5 mA tOFF (Note 3) ms (Note 3) : SWITCHING TIME TEST CIRCUIT IF TLP227G 1 4 2 3 RL VDD IF VOUT VOUT 90% 10% tON 3 tOFF 2003-01-28 TLP227G(N),TLP227G-2(N) RESTRICTIONS ON PRODUCT USE 020704EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium (GaAs) Arsenide is a substance used in the products described in this document. GaAs dust or vapor is harmful to the human body. Do not break, cut, crushu or dissolve chemically. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 2003-01-28